TRANSISTOR FEI Search Results

BA 92 SAMSUNG

Abstract: transistor BA 92 samsung transistor Ba 92 transistor samsung
Contextual Info: SAMSUNG SEMI CONDUCTOR INC MPS6651 IME D J 7^4145 0007334 T PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR •'Collector-feinJtterifoltág*: Vcto=25V. • CollectorDlssipatlon: Pc max =625mW ; ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

L82 NEC

Abstract: transistor mp
Contextual Info: SILICON TRANSISTOR 2SC3631-Z NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3 DESCRIPTION 2SC3631-Z is designed for High Voltage Switching, especially in PACKAGE DIMENSIONS in millimeters} Hybrid Integrated Circuits. FEA T U R ES • High Voltage V ceo = 400 V

1000C

Abstract: 2SB1149 diode dumper
Contextual Info: NEC DESCRIPTION PNP SILICON DARLINGTON TRANSISTOR 2SB1149 The 2SB1149 is a darlington transistor built-in dumper diode PACKAGE DIMENSIONS at E-C. in millimeters inches It is suitable for use to operate from IC without predfiver, such 8.5 MAX. (0.334 MAX.)

BU2508-AX

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2508AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional

BUK483-60A

Contextual Info: PHILIPS INTERNATIONAL bSE I> • 711062b Q D b m ? S 7bM « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.

2sC1923 transistor

Abstract: 2sc1923 10ID IY TRANSISTOR
Contextual Info: ST 2SC1923 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications FM, RF, MIX, IF amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2522DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved

Contextual Info: MOT OROL A SC XSTRS/R F> 4bE b3b7S5M D QQIBTB? b «M O T bT Order this data sheet By MUN2211/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN2211 MUN2212 MUN2213 Bias Resistor Transistor NPN Silicon Surface Mount Transistor With Monolithic Bias Resistor Network

IY TRANSISTOR

Abstract: 2sc1923 2sC1923 transistor 10ID
Contextual Info: ST 2SC1923 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications FM, RF, MIX, IF amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be

2sC1923 transistor

Abstract: 2sc1923 common base amplifier circuit common emitter amplifier IY TRANSISTOR The 2002 is a COMMON BASE transistor 10ID FEI 30
Contextual Info: ST 2SC1923 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications FM, RF, MIX, IF amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be

2sc1923

Abstract: 10ID
Contextual Info: ST 2SC1923 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications FM, RF, MIX, IF amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be

it4142

Abstract: it414 BCX71H MMBT5086
Contextual Info: S A MS UN G SE MIC OND UCT OR INC BCX71H IME D | 0GQ7225 M | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2525DW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 97Q 376-2022 (212)227-6008 FAX: (973) 3764860 SILICON PLANEX* TRANSISTOR Quality Semi-Conductors 2N3056A *.IMV»WOUJ-I . 2N3056A is a silicon NPN PLANEX* transistor, designed to provide a high breakdown voltage with a low saturation resistance. This

Contextual Info: ALLEGRO MICROSYSTEMS INC T3 D • D5GM33Ö G0037S7 3 ■ ALGR T-91-01 P R O C E S S N J26L Process NJ26L N-Channel Junction Field-Effect Transistor Process NJ26L is an N-channel junction fietdeffect transistor designed for general-purpose, lownolse, high-galn applications not requiring high

ksp94

Contextual Info: KSP94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO -92 • H igh C ollector-Em ittar Voltage: V C eo = -400V • Low C o llecto r-E m ilter Saturation Voltage • Com plem ent to K S P 44 ABSOLUTE MAXIMUM RATINGS TA-25t: C h a ra c te ristic

fenwal thermistor

Contextual Info: fei BENCHMARQ _ DV2005L1 Fast Charge Development System Control of PNP Power Transistor Features >- bq2005 fast charge control evaluation and development ► Charge current sourced from two on-board frequency-modulated linear regulators up to 3.0 A

MJ12005

Abstract: MJ12005 MOTOROLA MR918 4229P-L00-3C8 POT CORE 4229P-L00 4229PL00-3C8 motorola mj12005 Motorola mr918
Contextual Info: MOTOROLA SC XSTRS/R F 15E D I L3t?aSM QOflSQTS 7 | MOTOROLA SEM ICO N DUCTO R TECHNICAL DATA 8 AMPERE NPN SILICON POWER TRANSISTOR HORIZONTAL DEFLECTION TRANSISTOR . . . s p e c ific a lly designed fo r use in d e fle c tio n c irc u its . • V c E X = 1500 V

tc1665

Abstract: TC-1665A transistor mp
Contextual Info: SILICON TRANSISTOR 2SC3632-Z NPN SILICON EPITAXIAL TRANSISTOR MP-3 DESCRIPTION 2 S C 363 2-Z is des ig n e d fo r High V o ltag e S w itching, especially in PACKAGE DIMENSIONS in m illim eters Hybrid In te g rate d Circuits. FEATURES • H ig h V o lta g e V ceo = 600 V

2SK852

Abstract: jb 5531 JE 33 26L55 T1IG
Contextual Info: NEC o ^ n y ^ Ju n ctio n Field Effect Transistor i & m t e w m m N-Channel Silicon Junction Field-Effect Transistor Audio Frequency Amplifier f t W f t High gm < ntzshSi f i j f t o ¡ S ita . V o gdo> r - M i -c r < + •/ 7 u > = 10 V, V<; s = 0 1.25 + 0.1

Contextual Info: P ft BC817 S E M IC O N D U C T O R FORWARD INTERNATIONAL. ELECTRONICS LTD, KPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR P a c k a g e fT l> 9 2 A B S O L U T E M A X IM U M R A T IN G S a t T am b = 25*C Sym bol R a tin g U irft

BFT92

Abstract: BFQ51 BFQ52 X3A-BFT92
Contextual Info: 1^53^31 0035210 feiTt M A P X Philips Semiconductors Product specification PNP 5 GHz wideband transistor crystal X3A-BFT92 N AUER PH ILI PS/DISCRETE DESCRIPTION bRE 3 MECHANICAL DATA PNP crystal used in BFQ51 SOT37 , BFQ52 (TO-72) and BFT92 (SOT23). Crystals are supplied as whole