TRANSISTOR F8 Search Results

Contextual Info: RN1907FS~RN1909FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1907FS, RN1908FS, RN1909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Incorporating a bias resistor into a transistor reduces parts count.

301 marking code PNP transistor

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BF824 PNP medium frequency transistor Product specification Supersedes data of 1997 Jul 08 1999 Apr 15 Philips Semiconductors Product specification PNP medium frequency transistor BF824 FEATURES PINNING

301 marking code PNP transistor

Abstract: BF824W
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D102 BF824W PNP medium frequency transistor Product specification Supersedes data of 1997 Jul 07 1999 Apr 15 Philips Semiconductors Product specification PNP medium frequency transistor BF824W FEATURES PINNING

CBVK741B019

Abstract: F63TNR F852 FDT439N PN2222A 63a30
Contextual Info: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high

F852 transistor

Contextual Info: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high

MARKING CODE f8 sot23

Abstract: BF824 data sheet BF824
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF824 PNP medium frequency transistor Product specification Supersedes data of 1999 Apr 15 2004 Jan 16 Philips Semiconductors Product specification PNP medium frequency transistor BF824 FEATURES PINNING • Low current max. 25 mA

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

BF824

Abstract: MARKING CODE f8 sot23 BF824 NXP
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF824 PNP medium frequency transistor Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 16 NXP Semiconductors Product data sheet PNP medium frequency transistor BF824 FEATURES PINNING • Low current max. 25 mA

RN1907FS

Abstract: RN1908FS RN1909FS RN2907FS RN2909FS
Contextual Info: RN1907FS~RN1909FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1907FS, RN1908FS, RN1909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Reducing the parts count enables the manufacture of ever more

Contextual Info: RN1907FS~RN1909FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1907FS,RN1908FS,RN1909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Reducing the parts count enable the manufacture of ever more

Contextual Info: RN1907FS~RN1909FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1907FS, RN1908FS, RN1909FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Reducing the parts count enables the manufacture of ever more

PBLS2003D

Abstract: MARKING SMD PNP TRANSISTOR F8
Contextual Info: PBLS2003D 20 V PNP BISS loadswitch Rev. 01 — 24 June 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)

DM54S189

Contextual Info: DM74S289 National Semiconductor DM74S289 64-Bit 16x4 Open-Collector RAM TRI-STATE( RAM General Description These 64-bit active-element memories are monolithic Schottky-clamped transistor-transistor logic (TTL) arrays or­ ganized as 16 words of 4 bits each. They are fully decoded

PBLS2003D

Abstract: MARKING SMD PNP TRANSISTOR F8 SC74 marking 345 NXP SMD mosfet MARKING CODE
Contextual Info: PBLS2003D 20 V PNP BISS loadswitch Rev. 02 — 27 August 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal BISS transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • Ultra super mini-mold thin flat package 1.4 ±0 05 (1.4 mm x 0,8 mm x 0.59 mm: TYP.) 0.8 ± 0.1 • Contains same chip as 2SC5195

Contextual Info: NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior

CBVK741B019

Abstract: F011 F63TNR F852 FDS9953A L86Z NDS9933A 28A-600 F011 transistor
Contextual Info: NDS9933A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features This P-Channel enhancement mode power field effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior

NTE74LS138

Abstract: NTE74HCT138 NTE74HC138 NTE74132 NTE74HC139 NTE74HC132 NTE74141 NTE74136 NTE74147 NTE74128
Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74126, 14-Lead DIP, See Diag. 247 NTE74HC126, NTE74LS126A Quad Bus Buffer w/3-State Outputs NTE74128 14-Lead DIP, See Diag. 247 Quad 2—Input NOR 50Í2 Line Driver 1Y ^ ^ Q v cc B 4Y 1A n 1B H Q v cc

Contextual Info: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74150 24-Lead DIP, See Diag. 252 1—of—16 Data Selector/Multiplexer I E E Data Inpu Data Inpu V cc Data Inpu Output EO Data Inpu 4 | Q Output GS Data Inpu input 3 Data inpu Q Input 2 Data Jnpu Output AO

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC310S NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2 S C 3 1 0 5 is a silicon N P N epitaxial planar type transistor specifically designed fo r power amplifiers in the 8 0 0 — Dimensions in mm R0.6 9 0 0 M H z band range.

microstripline

Abstract: acrian RF POWER TRANSISTOR 8mob5 VCC125 ACRIAN transistor 835 A1W TRANSISTOR 8008-6 8MOB15 8MOB25
Contextual Info: ^ 0 1 8 2 .9 9 8 ':, A C R I AN A Ï NC*; GENERAL »E D 0 0 1 3 S ti D E SC R IP TIO N The 8MOB25 is an internally matched, common base transistor capable of providing 25 Watts of CW RF output power at 835 MHz. This transistor is specifically designed for cellular radio amplifier

2SC5585

Abstract: DTC144EE
Contextual Info: EMF8 Transistors Power management dual transistors EMF8 2SC5585 and DTC144EE are housed independently in a EMT6 package. !Structure Silicon epitaxial planar transistor (2) DTr2 (2) 0.5 0.5 1.0 1.6 (5) (1) 0.5 1.2 1.6 Each lead has same dimensions Abbreviated symbol : F8

2SC5585

Abstract: DTC144EE
Contextual Info: EMF8 Transistors Power management dual transistors EMF8 2SC5585 and DTC144EE are housed independently in a EMT6 package. zStructure Silicon epitaxial planar transistor (2) DTr2 (2) 0.5 0.5 1.0 1.6 (5) (1) 0.5 1.2 1.6 Each lead has same dimensions Abbreviated symbol : F8