TRANSISTOR ER 302 Search Results

Contextual Info: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2047 PINNING - SOT5Q2A FEATURES • High pow er gain PIN DESCRIPTION • Easy p ow er control 1 drain • E xcellent ruggedness

CA3026

Contextual Info: Differential Am plifiers íü !| HARRIS S E M I C O N D U C T O R BCA • GE CA3054 IN T ER SIL M ay 1 9 9 0 Transistor Array - Dual Independent Differential Amplifiers For Low Pow er Applications at Frequencies from DC to 1 2 0 M H z Features: Applications:

BLV21

Abstract: transistor L6 Sss-5 2222 123 capacitor philips B20-4
Contextual Info: PHILIPS INTERNATIONAL bSE ]> m 7110fl2b 0GbSfl3ñ 3ÔT « P H I N BLV21 Jl V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in cfass-A, B and C operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V . The transistor is resistance stabilized and is guaran­

SNW-EQ-608

Abstract: SNW-FQ-302B BLF1047 SNW-FQ-302A
Contextual Info: DISCRETE SEMICONDUCTORS Preliminary specification Supersedes data of 1999 July 01 Philips Semiconductors 2000 Feb 02 PHILIPS Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1047 FEATURES PINNING -SOT541A • High pow er gain

transistor di 960

Abstract: SOT467C BLF1046
Contextual Info: DISCRETE SEMICONDUCTORS Preliminary specification Supersedes data of 1999 Nov 02 Philips Semiconductors 2000 Feb 02 PHILIPS Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1046 FEATURES PINNING - SOT467C • High pow er gain

SNW-EQ-608

Abstract: transistor 1345 SNW-FQ-302B transistor di 960 BLF1048 SNW-FQ-302A
Contextual Info: DISCRETE SEMICONDUCTORS Preliminary specification Supersedes data of 1999 July 01 Philips Sem iconductors 2000 Feb 02 PHILIPS Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1048 FEATURES PINNING - SOT5Q2A • High pow er gain

CA3026

Abstract: CA3005 CA3006 CA3005 or CA3006 ca3054d CA3054E ca3026t a3026c ca3054
Contextual Info: D ifferential Am plifiers CA3026, CA3054 Transistor Array - Dual Independent Differential Amplifiers For Low Pow er A pplications at Frequencies from D C to 120 M H z Features • Two differential amplifiers on a common substrate ■ Independently accessible inputs and outputs

56590653B

Abstract: MRF316
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF316 . . . designed primarily for wideband large-signal output amplifier stages in the 30-200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 80 Watts

Contextual Info: Voltage Followers S G 1 0 2 /2 0 2 /3 0 2 SG110/210/310 Th e S G 102/202/302 are high-gain operational am plifiers designed sp ecifically fo r unity-gain non-inverting voltage follow er applications. Th e devices incorporate advanced super-beta transistor processing techniques to

mrf317"

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . designed primarily for wideband large-signal output amplifier stages in 30-200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W Minimum Gain = 9.0 dB

Contextual Info: SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZTA42 o FEATURES * Suitable for video output stages in T V sets and switch m ode p ow er supplies * High breakdown voltage CO M PLIM EN TAR Y TYPE - FZTA92 B PARTMARKING DETAIL - DEVICE TYPE IN FULL ABSOLUTE MAXIMUM RATINGS.

A720 transistor

Abstract: transistor A720 4392 ic equivalent 2N3906 350MW
Contextual Info: M1L-S'19500/530 ER 1 March 1979 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, SILICON TYPE 2N3906 This specification ts approved for use^ _by_ th<e Electronics Commandj Department o f ^ h ^ ^ r m V j a_nd_is available for use by a~lT Departments and" Agencies of the Department of Defense.

Contextual Info: N AMER P H I L I P S / D I S C R E T E OLE D bbSBTBl OOISIST 2 DtV tLU H M tN I UAIA PZB16040U T his data sheet contains advance inform ation and specifications are subject to change w ithout notice. y v r - 3 3 - H M ICRO W AVE POW ER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C

Contextual Info: TOSHIBA GT80J101 TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N - CHANNEL M O S TYPE G T 8 0 J 1 01 U n it in m m HIGH P O W ER SWITCHING APPLICATIONS. 2 0.5M AX. • H ig h In p u t Im pedance • H ig h Speed ^3-3 ±0.2 t f = 0 .4 0 / / s M ax.

TP3020A

Abstract: CER40 case 244-04 TP3020
Contextual Info: b'ìE D MO TO R O L A SC X ST RS /R F b3 b 7 B S 4 DIDDflfll «riOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information TP3020A The RF Line U H F P o w er Transistor The TP3020A is designed for use in the 900 MHz mobile radio band. Its high gain and ability to operate Class A makes it an ideal choice as a driver operating

SJ 2036

Abstract: jsw marking 2N2631 2N2876 transistor JSW 12 ic sj 2036 transistor JSW 2N263 CLA transistor JSW 70
Contextual Info: M IL -S - 1£500/303 NAVY 22 O cto b er 1964 MILITARY SPECIFICATION TRANSISTOR, T Y PE S 2N263I AND 2N2876 1. SCOPE 1.1 D e sc rip tio n .- T h is sp e c ific a tio n c o v e rs the d e ta il re q u ire m e n ts fo r a silic o n , NPN tr a n s is to r and is

HXTR-5104

Abstract: S21E transistor 5104 db Hxtr 5104 ltp 521 11 C u50
Contextual Info: H E W L E T T ^ PACKARD COMPONENTS LINEAR POWER TRANSISTOR HXTR-5104 Features H IG H P1dB L IN E A R PO W ER 29 dBm Typical at 2 G Hz H IG H P 1dB G A IN 9 dB Typical at 2 GHz BIPOLAR TRANSISTORS . LOW D IS T O R T IO N H IG H P O W E R -A D D E D E F F IC IE N C Y

HXTR-5103

Abstract: HPAC-200 GHL 8 S21E HPAC
Contextual Info: COMPONENTS LINEAR POWER TRANSISTOR Features HXTR-5103 7.62 H IG H P1dB L IN E A R PO W ER 23 dBm Typical at 2 G Hz H IG H P1dB G A IN 11 dB Typical at 2 G Hz LOW D IS T O R T IO N BIPOLAR TRANSISTORS H E W L E T T j j ÿ PA C K A R D G H IG H P O W E R -A D D E D E F F IC IE N C Y

2N1412A

Abstract: 2N1112 2NK12 IC 3Q20 SJ 2036 2N1412 clare mercury relay 3Q20 3Q20 IC Germanium power
Contextual Info: M IL -S - 19500/76C N A V T 20 Septem ber 1967. SU PERSEDING M I L - S - 19500/7 6B(NAVT) 15 J u n e 2965 (See 6. 2) M ILITA RY S P E C IF IC A T IO N TRANSISTOR, P N P , GERM ANIUM , POW ER T Y P E S ZN14IE AND 2N 1412A SCOPE 1. I D e s c rip tio n - T h is s p e c if ic a tio n c o v e rs th e d e ta il r e q u ir e m e n ts

TRANSISTOR BD 135

Abstract: Q1206
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP 3021 The RF Line U H F P o w er T ran sisto r The TP3021 is designed for 24 V common emitter base station amplifiers. Operating in the 820-960 MHz bandwidth, it has been specifically designed for use in analog and digital GSM systems as a medium power output device.

5V RS232 driver tristate

Abstract: transistor Er 302 loopback using RS232
Contextual Info: C irN A v SP301/302 SIG N AL PROCESSING EXCELLENCE RS232/RS422 Line Drivers/Receivers RS232 and RS422 on One Chip Multiple Drivers and Receivers Software-selectable Modes Loopback for Self-Testing Short-circuit Protected 24-pin Single-width DIP or SOIC Package

Contextual Info: GEC PLESSEY SEMICONDS 43E D • 3 7 b ö S S S GGlS'ihl H B P L S B GEC P L E S S E Y I S E M I C O N D U C T O R ~ S ~ ~ f. 3028-1.0 SP1648 ECL OSCILLATOR The SP1648 is an em itter-coupled oscillator, constructed on a single m onolithic silicon chip. O utput levels are

4n25

Abstract: 4n35 597-289 4n25 an DIODE 0536 W4N35 4n32
Contextual Info: Issued November 1992 F14481 4N series opto-isolators RS stock nos. 597-289, 597-295, 597-302 A range of industry standard general purpose opto-isolators. The 4N25 and 35 consist of a gallium arsenide infra-red emitting diode coupled to an NPN silicon photo-transistor. The 4N32 device consists of a gallium

automatic motor for reverse and forward

Abstract: FP1016 LB1645 LB1640 ac motor forward reverse control LB1687N c+9050+60001,+motor LB1651
Contextual Info: Continued rrom previous page Package Device Number of tDrawing Type pins and number configuration Description Features LA5528N M M FP 8 30 3 2 B C om p act D C motor driver Miniflat p ac ka ge version of the L A 5 5 2 8 N LA5540 S IP 4H 3027A Regulator, motor driver with brake