TRANSISTOR EAR - 3 Search Results

822SD

Abstract: 1K transistor
Contextual Info: Hutton Close, Crowther Ind Est, Washington, Tyne & W ear NE38 0AH, England mailto:sales@isocom .uk.com - Tel: +44 0 191 4166546 - Fax: +44 (0)191 4155055 Optical Switches: Dual Transistor Output Optocouplers Catalogue Home Page 150 250 822S 822SD: Dual Transistor Output

Contextual Info: SG508 SILICON EENERAL QUAD-NAND DRIVER LIN EAR IN TEGR ATED C IRCUITS DESCRIPTION FEATURES The SG508 is a Quad 2-Input NAND Driver with outputs capable ot sustaining 100V breakdown voltage. Each TTL-compatible NAND gate controls a 500mA output sink transistor. This combination of a TTL-compatible gate

Contextual Info: N AMER PHILIPS/DISCRETE DbE D ttiS3T31 D01SQ31 1 • LZ1418E100R T -3 S -U M IC R O W AVE LIN EAR POW ER TR AN SISTO R N-P-N silicon power transistor fo r use in a common-emitter, class-A amplifier from 1,4 GHz to 1,8 GHz in c.w. conditions in m ilitary and professional applications.

ECA 324

Contextual Info: 19-0485; Rev 0; 4/96 J V IS ÌX A J V V D ual9 Low -Dropout, 100m A L in ear R egulators The devices feature Dual Mode operation: their out­ put voltages are preset at 3.15V for the “T" versions, 2.84V for the “S” versions, or 2.80V for the “R” versions

Contextual Info: 19-1117; Rev 0; 8/96 V M / X IA I Low -C ost, Low-Dropout, D ual L in ear R eg u lato r The MAX8862 output voltage is preset to 4.95V L , 3.175V (T), or 2.85V (R). This device employs Dual Mode operation, allowing user-adjustable outputs from +2V to +11V with external resistors. The input

SP SOT23-5

Contextual Info: 19-0466; Rev O; 3/96 jy \jí7 L \jy \ Low-Dropout, 100mA Linear R egulators _ General Description The MAX8863T/S/R and MAX8864T/S/R low-dropout lin­ ear regulators operate from a +2.5V to +5.5V input range and deliver up to 100mA. A PMOS pass transis­

Contextual Info: 19-0485; Rev O; 4/96 Dual, Low-Dropout, 100mA L in ear R egulators _ F ea tu res ♦ Low Cost The devices feature Dual Mode operation: their out­ put voltages are preset at 3.15V for the "T" versions, 2.84V for the "S" versions, or 2.80V for the "R" versions

EL series SMD transistor

Abstract: 6R299P ipl60R299cp mosfet 600v JESD22 ipl60r IPL60 6r299
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description

6r385P

Abstract: IPL60R385CP JESD22 EL series small size SMD transistor infineon msl
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R385CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R385CP Description

6R199P

Abstract: mosfet 6R199 ipl60r199cp 6R199P DATA SHEET smd transistor AR 6 JESD22 EL series small size SMD transistor 6R19 IPL60R199
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R199CP Description

t 3866 transistor equivalent transistor

Abstract: ML4868E lt 7245
Contextual Info: December 1994 PRELIMINARY % ,M ic r o L in e a r ML4868 High Frequency, Low Voltage Boost Regulator GENERAL DESCRIPTION FEATURES The ML4868 is a high frequency boost regulator designed for DC to DC conversion in 2 to 3 cell battery powered systems. The maximum switching frequency can exceed

sem 2005

Abstract: P0903BI P0903b P0903 niko-sem
Contextual Info: NIKO-SEM P0903BI N-Channel Logic Level Enhancement Mode Field Effect Transistor TO-251 Lead-Free D 3 PRODUCT SUMMARY RDS ON ID 25 9.5mΩ 50A 1. GATE 2. DRAIN 3. SOURCE 1 2 V(BR)DSS G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P0903BSG

Abstract: P0903B P0903 Niko Semiconductor SEM 2004 TO-263 niko-sem
Contextual Info: P0903BSG N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-263 D2PAK Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 9.5mΩ 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P0903BDG

Abstract: p0903bd Niko Semiconductor p0903bdg transistor p0903bdg niko-sem p0903bdg P0903BDG transistor SEP-24-2004 P0903b P0903 P09*3bdg
Contextual Info: N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM P0903BDG TO-252 DPAK Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 9.5mΩ 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

Contextual Info: October 1996 MgL Micro Linear ML4961 Adjustable Output Low Voltage Boost Regulator with Detect GENERAL DESCRIPTION FEATURES The ML4961 is a boost regulator designed for D C to DC conversion in 1 to 3 cell battery powered systems. The combination of BiCM OS process technology, internal

SEM 2004

Abstract: P3055LLG
Contextual Info: P3055LLG N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM SOT-223 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 25 90mΩ 6A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P3057LDG

Abstract: dpak code p3057 P3057LD sm 17 35 tc
Contextual Info: P3057LDG N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 DPAK Lead Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 50mΩ 12A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

Contextual Info: TO SH IB A TPC8201 TOSHIBA FIELD EFFECT TRANSISTOR LITHIUM ION BATTERY SILICON N CHANNEL MOS TYPE tt-MOSVI TPC8201 INDUSTRIAL APPLICATIONS NOTE BOOK PC PORTABLE MACHINES AND TOOLS • • • • Low Drain-Source ON Resistance : Rd S (ON)= 37mO (Typ.) High Forward Transfer Admittance: |Yfs|=6S (Typ.)

P3056LD

Abstract: DIODE P3056LD niko P3056LD p3056LD NIKO
Contextual Info: P3056LD N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 DPAK D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 50mΩ 12A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

nikos

Abstract: P75N02LTG p75n02
Contextual Info: P75N02LTG N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-220 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 25 5mΩ 75A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

SEM 2006

Abstract: P0808ATG transistor vds rds 12 id 80a to220
Contextual Info: P0808ATG N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM TO-220 Lead Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 75 8mΩ 80A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

SEM 2006

Abstract: P1308ATG transistor sem 2006
Contextual Info: P1308ATG N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM TO-220 Lead Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID 75 13mΩ 80A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

kef 842

Abstract: 228A2 ML4861
Contextual Info: October 1996 Micro Linear ML4861 Low Voltage Boost Regulator GENERAL DESCRIPTION FEATURES The ML4861 is a boost regulator designed for D C to DC conversion in 1 to 3 cell battery powered systems. The combination of BiCM OS process technology, internal synchronous rectification, variable frequency operation,

Contextual Info: September 1996 « iL Micro Linear ~ ARV ML65T541 3.3V High Speed Octal Buffer/Line Driver GENERAL DESCRIPTION FEATURES The ML65T541 is a non-inverting octal buffer/line driver. The high operating frequency 66M Hz driving a 50pF load and low propagation delay (2ns) make it ideal for