TRANSISTOR EAR - 3 Search Results

822SD

Abstract: 1K transistor
Contextual Info: Hutton Close, Crowther Ind Est, Washington, Tyne & W ear NE38 0AH, England mailto:sales@isocom .uk.com - Tel: +44 0 191 4166546 - Fax: +44 (0)191 4155055 Optical Switches: Dual Transistor Output Optocouplers Catalogue Home Page 150 250 822S 822SD: Dual Transistor Output

TPV598

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TPV598 Advance Information The RF Line U H F L in ear P o w er Transistor . . . designed for 4.0 watt stages in Band V TV transposer amplifiers. Gold metallized dice and diffused em itter ballast resistors are used to enhance

L0703

Abstract: 197-103LA6-A01 BQ2004
Contextual Info: fe]BENCHMARQ DV2004L1 Fast Charge Development System Control of PNP Power Transistor Features >- bq2004 fast charge control evaluation and development V C harge cu rren t sourced from an on-board frequency-modulated lin ear regulator up to 3.0 A ► F ast charge of 4 to 10 NiCd or NiMH cells and one

TPV-595A

Abstract: TPV595A tpv595
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TPV595A The RF Line U H F Lin ear P o w er Transistor . . . designed for driver and output stages in band IV and V TV transposers and transmitter amplifiers. The TPV595A uses gold metallized die with diffused emitter ballast resistors to enhance reliability, ruggedness and linearity.

Contextual Info: SG508 SILICON EENERAL QUAD-NAND DRIVER LIN EAR IN TEGR ATED C IRCUITS DESCRIPTION FEATURES The SG508 is a Quad 2-Input NAND Driver with outputs capable ot sustaining 100V breakdown voltage. Each TTL-compatible NAND gate controls a 500mA output sink transistor. This combination of a TTL-compatible gate

Contextual Info: N AMER PHILIPS/DISCRETE DbE D ttiS3T31 D01SQ31 1 • LZ1418E100R T -3 S -U M IC R O W AVE LIN EAR POW ER TR AN SISTO R N-P-N silicon power transistor fo r use in a common-emitter, class-A amplifier from 1,4 GHz to 1,8 GHz in c.w. conditions in m ilitary and professional applications.

ECA 324

Contextual Info: 19-0485; Rev 0; 4/96 J V IS ÌX A J V V D ual9 Low -Dropout, 100m A L in ear R egulators The devices feature Dual Mode operation: their out­ put voltages are preset at 3.15V for the “T" versions, 2.84V for the “S” versions, or 2.80V for the “R” versions

Contextual Info: 19-1117; Rev 0; 8/96 V M / X IA I Low -C ost, Low-Dropout, D ual L in ear R eg u lato r The MAX8862 output voltage is preset to 4.95V L , 3.175V (T), or 2.85V (R). This device employs Dual Mode operation, allowing user-adjustable outputs from +2V to +11V with external resistors. The input

SP SOT23-5

Contextual Info: 19-0466; Rev O; 3/96 jy \jí7 L \jy \ Low-Dropout, 100mA Linear R egulators _ General Description The MAX8863T/S/R and MAX8864T/S/R low-dropout lin­ ear regulators operate from a +2.5V to +5.5V input range and deliver up to 100mA. A PMOS pass transis­

Contextual Info: 19-0485; Rev O; 4/96 Dual, Low-Dropout, 100mA L in ear R egulators _ F ea tu res ♦ Low Cost The devices feature Dual Mode operation: their out­ put voltages are preset at 3.15V for the "T" versions, 2.84V for the "S" versions, or 2.80V for the "R" versions

LA1815

Abstract: LA2030 multiplex in car IC FM tuner car LA2010 T-77-07-II 3036B
Contextual Info: SANYO SEMICONDUCTOR CORP 7t. 7997076 de 7 ^ 7 0 7 ^ OOOlñME SANYO SEMICONDUCTOR CORP LA1815 l~ " f~ T-77-C £~- O'? D 7~-~77'rÛS-'0Ÿ 76C 01842 CIRCUIT D R A W ING N o .2 0 2 B m o n o lith ic lin ear IC n~07~l AM /FM f i TUNER FOR CAR APPLICATIONS 3021B

317L

Abstract: 317LB 317LD LM317LBZ VOLTAGE REGULATOR IC LM SERIES IC LM 317 LADJ
Contextual Info: MOTOROLA SEMICONDUCTOR! TECHNICAL DATA Three-Terminal Adjustable Output Positive Voltage Regulator The LM317L is an adjustable 3-terminal positive voltage regulator capable of supplying in excess of 100 mA over an output voltage range of 1.2 V to 37 V. This

EL series SMD transistor

Abstract: 6R299P ipl60R299cp mosfet 600v JESD22 ipl60r IPL60 6r299
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R299CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R299CP Description

6r385P

Abstract: IPL60R385CP JESD22 EL series small size SMD transistor infineon msl
Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R385CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R385CP Description

t 3866 transistor equivalent transistor

Abstract: ML4868E lt 7245
Contextual Info: December 1994 PRELIMINARY % ,M ic r o L in e a r ML4868 High Frequency, Low Voltage Boost Regulator GENERAL DESCRIPTION FEATURES The ML4868 is a high frequency boost regulator designed for DC to DC conversion in 2 to 3 cell battery powered systems. The maximum switching frequency can exceed

P45N02LDG

Abstract: Niko Semiconductor p45n02ldg P45N02LD dpak code Niko Semiconductor P45N02 Field Effect Transistor SM-150 diode TO252
Contextual Info: P45N02LDG N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 DPAK Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 20mΩ 45A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

sem 2005

Abstract: P0903BI P0903b P0903 niko-sem
Contextual Info: NIKO-SEM P0903BI N-Channel Logic Level Enhancement Mode Field Effect Transistor TO-251 Lead-Free D 3 PRODUCT SUMMARY RDS ON ID 25 9.5mΩ 50A 1. GATE 2. DRAIN 3. SOURCE 1 2 V(BR)DSS G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P0903BSG

Abstract: P0903B P0903 Niko Semiconductor SEM 2004 TO-263 niko-sem
Contextual Info: P0903BSG N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-263 D2PAK Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 9.5mΩ 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P0903BDG

Abstract: p0903bd Niko Semiconductor p0903bdg transistor p0903bdg niko-sem p0903bdg P0903BDG transistor SEP-24-2004 P0903b P0903 P09*3bdg
Contextual Info: N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM P0903BDG TO-252 DPAK Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 9.5mΩ 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

dpak code

Abstract: P1203BD TO252
Contextual Info: P1203BD N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 DPAK D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 9.5mΩ 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P45N02LS

Abstract: NIKO-SEM SM-150 diode P45N02LSG p45n02l P45N02
Contextual Info: NIKO-SEM P45N02LSG N-Channel Logic Level Enhancement Mode Field Effect Transistor TO-263 D2PAK Lead Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 20mΩ 45A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P1203BS

Abstract: P1203B
Contextual Info: P1203BS N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-263 D2PAK D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 9.5mΩ 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

P50N03LD

Abstract: Niko Semiconductor
Contextual Info: P50N03LD N-Channel Logic Level Enhancement Mode Field Effect Transistor NIKO-SEM TO-252 DPAK D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 27 12mΩ 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

Contextual Info: September 1997 PR ELIM IN A R Y Micro Linear ML6516444 16-Bit Buffer/Line Driver with 3-State Outputs GENERAL DESCRIPTION FEATURES The M L6516444 is a B iC M O S, 16-bit buffer/line driver with 3-state outputs. This device w as specifically designed for high speed bus applications. Its 16 channels support