TRANSISTOR D 863 Search Results

Contextual Info: AN AL OG « F VI CF X INC 51E D A N A LO G D E V IC E S Dual PNP Transistor T-H3-2£r MAT-03 FEATURES Dual Matched PNP Transistor Low Offset Voltage. . Low Noise. 1nV/VHz @ 1kHz Max High G ain . .

Contextual Info: m 2N3741 \ \ SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3741 is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O -66 MAXIMUM RATINGS INCHES A 6 C D E F G H J K L M 4.0 A lc O m < -80 V 25 W @ Tc = 25 °C

2n3054a

Contextual Info: m 2N3054A \ \ SILICON NPN POWER TRANSISTOR D E SC R IP T IO N : The 2N3054A is a Medium Power Transistor for General Purpose Switching and Amplifier Applications M A XIM U M R A T IN G S 4.0 A 10 A PEAK lc V INCHES 55 V ce 75 W @ Tc = 25 °C P diss -65 °C to +200 °C

2N6211

Abstract: te 2443
Contextual Info: 2N6211 SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6211 is Designed for Medium Power Amplifier and Switching Applications. 2.0 A VcB 275 V 225 V o m Ic V MAXIMUM RATINGS PACKAGE STYLE TO- 66 INCHES A B C D £ f G H J K L M 35 W @ Te # 25 0C P d is s Tj

Contextual Info: 32E D • fl23b320 0017Eflfi T « S I P PNP Silicon Transistor SMBT A 70 SIEMENS/ SPCL-, SEMICONDS ' *7_ • For AF input stages and driver applications • High current gain • Low coilector-emitter saturation voltage B Type Marking Ordering code for

H24A4

Abstract: H24A1 H24A2 H24A3
Contextual Info: H24A1, H24A2 H24A3, H24A4 4 PIN OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT Dimensions in mm 1 2 + D E + 4 1 9.53 DESCRIPTION The H24A series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a plastic package.

transistor L1A

Abstract: 1206 capacitor chip pads layout rogers capacitor bc17a 470 860 mhz PCB
Contextual Info: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

transistor j352

Contextual Info: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this

Contextual Info: H D66300T- Horizontal Driver for TFT-Type LC D Color TV The HD66300T is a horizontal driver used for TFTtype (Thin Film Transistor) LCD color TVs. Specifi­ cally, it drives the drain bus signals of a TFT-type LCD panel. Features The HD66300T receives as input three video_signals R,

moc 300v

Abstract: moc 7002
Contextual Info: ISOCOM COMPONENTS LTD 4SE D • 4flflbS10 DOQOHSM 5 ■ ISO | MOC 8111X, MQC 8112X, MOC 8113X », f, M,t ■■ jffgwM,i -m{ =”1-'.fr-'#fr-fri Üa* -i■ " OPTICALLY COUPLED ISOLATOR NON-BASE LEAD TRANSISTOR OUTPUT : f DESCRIPTION The MOC 811IX,8112X.8113X are optically coupled

Contextual Info: m 2N6213 \ \ SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6213 is Designed for General Purpose High Voltage Amplifier and Switching Applications. MAXIMUM RATINGS lc INCHES A 6 C D E F G H J K L M -350 V ce 35 W @ Tc = 25 °C P diss Tj -65 °C to +200 °C

Contextual Info: t Q V NS e* mt ii co on na d\ u c t , o r . M ay 1996 ND P6051 / NDB6051 N-Channel Enhancement M ode Field Effect Transistor G e n e ral D e s c rip tio n F eatures T hese N -C h a n n e l e n h a n c e m e n t m o d e p o w e r fie ld • 4 8 A , 5 0 V . RDS 0N = 0 .0 2 2 0

lt 7209

Contextual Info: MSE ]> ISOCOn COMPONENTS LTD • MflâbSlO 0D0Q24b S ■ ISO CNX 72AX V v 'h k W ^ y x & i'. ■ r; ; - j.' OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT D E S C R IP T IO N The CNX 72AX is a optically coupled isolator consisting o f a G allium Arsenide infrared emitting

moc 300v

Contextual Info: 4 flflbS10 0 0 0 0 2 ^ 0 B • ISO 45E D ISOCOtl C O M P O N E N T S LTD MOC 810IX, MOC 8102X, MOC 8103X, MOC 8104X ISOCOM OPTICALLY COUPLED ISOLATOR NON - BASE LEAD TRANSISTOR OUTPUT PACKAGE DIMENSIONS IN M M DESCRIPTION The MOC 8101X,8102X,8103X,8104X are optically

Contextual Info: 45E D ISOCOM COMPONENTS LTD L X >!• 'Û S ■ MfifibSlO 0 0 GD570 2 m i S O IS-201X, IS-202X, IS-203X, Hn, ¡-a"" f i 11 ft *1 ' Ml1;'1’!!1' ‘i i W ' M “» ,Vi-i! H f M ^ W "’WÜ-tiENil 'li 11 »*»■ OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT

Contextual Info: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this

Contextual Info: ISOCOM COMPONENTS LTD 45E D • HfiûbSlO 0DÜD5Ô2 T « I S O | S F H 60 0-0X, S F H 60 0-1X, S F H 60 0 -2 X, S F H 6 0 0-3 X, S F H 600-4 X *iti ii; j. ¡jij • I. H l’iif '1'>•?• SM *-*’. | ISOCOM Hi OPTICALLY COUPLED ISOLATOR TRANSISTOR OUTPUT

3D24N2Y

Abstract: transistor sc 238 9008 transistor transistor sc 308 SAL 41 transistor 9013 1008 transistor X2C70 transistor D 1002 3D24N
Contextual Info: SERVICE-MITTEILUNGEN VEB INDUSTRIEVERTRIEB R U N O F U N K U N D FE R N SE H E N AUSGABE: M m ri r a d i o - t e i e v i s i o n l 1 9 8 4 14-16 S e ite 1 - 1 2 Mitteilung aus dem VSB RFT Industrievertrieb R.u.F. Leipzig Serviceinformationen zuin neuen Auto-Stereo-Kassettenabspielgerät

Contextual Info: PHP112N06T; PHB112N06T N-channel enhancement mode field-effect transistor Rev. 01 — 07 March 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:

2n3055 motorola

Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
Contextual Info: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,

MICROPROCESSOR Z80

Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

Contextual Info: pS mm Aperture Package Schematic Emitter Sensor DUAL CHANNEL SLOTTED T111N 1T Ll 'DI VDKTLT1 PITLi 'P K aC VW Ti lTl fvTlTl H21A3 Typ. T‘ o f f H21A2 Typ. W Ton <Tf * Ip = 5mA Ip = 20mA Ip = 30mA v cc = 5V, \ K)R= Ip = 1mA Ip = 30mA Ip = 1mA Ip = 30mA 60

Contextual Info: M O TO RO LA O rder this docum ent bt M TD20N06HDL/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTD20N06HDL HDTMOS E-FET High Density Power FET DPAK for S urface Mount or Insertion Mount Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 20 AMPERES

K 3264 fet transistor

Abstract: K 3264 fet K 3264 transistor BUK7508-55A BUK7608-55A
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using ’trench’ technology which