TRANSISTOR D 822 Search Results

BUX45

Abstract: transistor et 460
Contextual Info: * B U X 45 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^Preferred device D isp o sitif recommandé High speed, high voltage, switching transistor Transistor de commutation , rapide , haute tension Thermal fatigue inspection

transistor NEC D 822 P

Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters

Contextual Info: ZXT1053AK 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = 75V : RSAT = 70m typical; IC = 5A DESCRIPTION Packaged in the D-Pak outline this high current high gain 75V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits and various

ZXT690BK

Abstract: ZXT690BKTC
Contextual Info: ZXT690BK 45V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN D-PAK SUMMARY BVCEO = 45V : RSAT = 77m ; IC = 3A DESCRIPTION Packaged in the D-Pak outline this high gain 45V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power

TRANSISTOR GB 558

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •

Contextual Info: N AMER PHILIPS/DISCRETE ^1=53^31 DD3T433 E7D BLW83 fc.RE D IAPX l H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transmitting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V . The transistor is specified fo r s.s.b. applications as linear

BLX13

Abstract: BLX13A C 3311 transistor HF band power amplifier philips 3h1 transistor f PH ON 823 philips Fxc 3 b SOT-56 transistor c 1971
Contextual Info: II PHI L IP S I N T E R N A T I O N A L MAINTENANCE TYPE MIE B J> 7110flSb O D E 7 7 C H 2 D P H I N II BLX13 H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for s.s.b. in class-A and AB and in f.m. transmitting appli­ cations in class-C with a supply voltage up to 28 V. The transistor is resistance stabilized and tested

transistor Siemens 14 S S 92

Abstract: 2sc 3150 transistor BRY 56 C Bry 56 BRY 66 A BRY 56 B
Contextual Info: ESC D • fl23StiQS 0004773 1 MS I E G , Programmable Unijunction Transistor BRY 56 7” ^ o f SIEMENS AKTIENGESELLSCHAF Programmable silicon planar unijunction transistor in TO 92 plastic package 10 A 3 DIN 41868 . K8max Type Ordering code BRY561» BRY 56 A

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from

1.4464

Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S

silicon npn planar rf transistor sot 143

Abstract: 945 npn S822T
Contextual Info: S822T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption

BFG96

Abstract: TRANSISTOR P3 1351 NPN TRANSISTOR BFG32 V 904 RL 805 transistor SOT103 bfg96 scattering 803 0863 FP 801 h a 431 transistor
Contextual Info: -7- ^ P h ilip s S em icon du ctors ^ /-rZ -g Product sp ecification BFG96 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL D E S C R IP T IO N N P N transistor in a 4-lead dual-em itter plastic S O T 1 0 3 envelope. It is designed for application in w ideband am plifiers, such a s M A T V

h11e

Abstract: transistor j02 527 S822T
Contextual Info: S822T/S822TW/S822TRW Vishay Telefunken Silicon NPN Planar RF Transistor Observe precautions for handling. Electrostatic sensitive device. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage

marking 822

Abstract: transistor IC 1557 b Telefunken u 257
Contextual Info: Temic S822T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features •

527H

Abstract: D 1413 transistor S822T
Contextual Info: T em ic S822T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. A Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features

Contextual Info: R1 1 0 0 D SERI ES ULTRA SMALL PACKAGE VOLTAGE REGULATOR NO.EA-117-111018 OUTLINE The R1100D Series are CMOS-based voltage regulator ICs with high accuracy output voltage and ultra-low supply current developed. Each of these ICs consists of a driver transistor, a voltage reference unit, an error

NEC 09030

Abstract: NEM090303M-28 8712 RESISTOR ldmos nec
Contextual Info: PRELIMINARY DATA SHEET LDMOS FIELD EFFECT TRANSISTOR NEM090303M-28 N-CHANNEL SILICON POWER MOS FET FOR UHF-BAND POWER AMPLIFIER DESCRIPTION The NEM090303M-28 is an N-channel enhancement-mode lateral MOS FET designed for driver stage in 0.5 to 1.0 GHz PA, such as, analog/digital TV-transmitter and GSM/D-AMPS/PDC cellular base station amplifiers. Dies are

2SD1189F

Abstract: 2SD1919 2SB822 2SD1758 2SD1766 two transistors 2SD1055 2sd1227m 2sd1055r ll1000
Contextual Info: Transistors Medium Power Transistor 32V, 2A 2SD1766/2SD1758/2SD1862/2SD1189F/ 2SD1055/2SD1919/2SD1227M •F e a tu re s 1) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW VcE(sat). VcE(sat) = 0 .1 6V (Typ.) 2SD1766 (Ic / I b = 2 A /0 .2 A ) 2) 1 6 ± 0.1

uPA571T

Abstract: PA571T IC8226 IC-8226 3905N 7700H
Contextual Info: SEC m ^ T ? — h v = 7 > '> ^ Silicon Transistor i x t x ¿ PNP //PA 571T ¡±, P 5 A 7 1 T 5 \d > 2 1US& W-mm b7>XX?$: 2 X T '* *), H S S ;)$ c o ip ]± , )v ¿ 3 M Ï : mm) hcoHfiM tc M R L i- t - o # m. o S C -70 — |r] X<r>'*"/ 'r — i?iz h y > >>

te 804

Contextual Info: Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England mailto:sales@isocom.uk.com - Tel: +44 0 191 4166546 - Fax: +44 (0)191 4155055 Optical Switches Optocouplers Catalogue Home Page H21A1-A2 200 870A 871A 875A 876A 813S3 813S5 813S7 822A1-A2 100

Contextual Info: SONY« CXP82220/82224 I CMOS 8-bit Single Chip Microcomputer Description The CXP82220/82224 is a CMOS 8-bit single chip microcomputer integrating on a single chip an A/D converter, serial interface, timer/counter, time base timer, capture timer counter, fluorescent display tube,

CXP82200

Abstract: CXP82220 CXP82224 SPC700
Contextual Info: CXP82220/82224 CMOS 8-bit Single Chip Microcomputer For the availability of this product, please contact the sales office. Description The CXP82220/82224 is a CMOS 8-bit single chip microcomputer integrating on a single chip an A/D converter, serial interface, timer/counter, time base

type elec 8222 - E

Contextual Info: DAC-8222 PMI DUAL 12-BIT DOUBLE-BUFFERED MULTIPLYING CMOS D/A CONVERTER FEATURES * Two Matched 12-Bit OACs on One Chip * Direct Parallel Load of All 12 Bits for High Data Throughput * Double-Buffered Digital Inputs * 12-Bit Endpont Linearity ±1/2 LSB) Over Temperature