TRANSISTOR D 822 Search Results

BUX45

Abstract: transistor et 460
Contextual Info: * B U X 45 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^Preferred device D isp o sitif recommandé High speed, high voltage, switching transistor Transistor de commutation , rapide , haute tension Thermal fatigue inspection

transistor NEC D 822 P

Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters

telefunken IC 121

Contextual Info: S 822 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, low current, low voltage, high gain, 50 Ohm transistor for 945 MHz cordless telephone, pager, and low current UHF remote control applications. Features D Low noise figure

ZXT953K

Abstract: ZXT953KTC of ZXT953KTC
Contextual Info: ZXT953K 100V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = -100V : RSAT = 67m ; IC = -5A DESCRIPTION Packaged in the D-Pak outline this high current high performance 100V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits

ZXT951K

Abstract: ZXT951KTC ZXT951 Bv 42 transistor
Contextual Info: ZXT951K 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = -60V : RSAT = 53m typical; IC = -6A DESCRIPTION Packaged in the D-PAK outline this high current high performance 60V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits

Contextual Info: ZXT1053AK 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = 75V : RSAT = 70m typical; IC = 5A DESCRIPTION Packaged in the D-Pak outline this high current high gain 75V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits and various

ZXT790AK

Abstract: ZXT790AKTC ZXT790A
Contextual Info: ZXT790AK 40V PNP MEDIUM POWER HIGH GAIN TRANSISTOR IN D-PAK SUMMARY BVCEO = -40V : RSAT = 83m ; IC = -3A DESCRIPTION Packaged in the D-Pak outline this high gain 40V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power

A 673 C2 transistor

Abstract: npn 2222 transistor inverter design using plc log sheet air conditioning NY TRANSISTOR MAKING ZXT1053AK ZXT1053AKTC
Contextual Info: ZXT1053AK 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = 75V : RSAT = 70m typical; IC = 5A DESCRIPTION Packaged in the D-Pak outline this high current high gain 75V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits and various

ZXT690BK

Abstract: ZXT690BKTC
Contextual Info: ZXT690BK 45V NPN MEDIUM POWER HIGH GAIN TRANSISTOR IN D-PAK SUMMARY BVCEO = 45V : RSAT = 77m ; IC = 3A DESCRIPTION Packaged in the D-Pak outline this high gain 45V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

TRANSISTOR GB 558

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •

Contextual Info: N AMER PHILIPS/DISCRETE ^1=53^31 DD3T433 E7D BLW83 fc.RE D IAPX l H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transmitting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V . The transistor is specified fo r s.s.b. applications as linear

BLX13

Abstract: BLX13A C 3311 transistor HF band power amplifier philips 3h1 transistor f PH ON 823 philips Fxc 3 b SOT-56 transistor c 1971
Contextual Info: II PHI L IP S I N T E R N A T I O N A L MAINTENANCE TYPE MIE B J> 7110flSb O D E 7 7 C H 2 D P H I N II BLX13 H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for s.s.b. in class-A and AB and in f.m. transmitting appli­ cations in class-C with a supply voltage up to 28 V. The transistor is resistance stabilized and tested

transistor Siemens 14 S S 92

Abstract: 2sc 3150 transistor BRY 56 C Bry 56 BRY 66 A BRY 56 B
Contextual Info: ESC D • fl23StiQS 0004773 1 MS I E G , Programmable Unijunction Transistor BRY 56 7” ^ o f SIEMENS AKTIENGESELLSCHAF Programmable silicon planar unijunction transistor in TO 92 plastic package 10 A 3 DIN 41868 . K8max Type Ordering code BRY561» BRY 56 A

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

transistor Siemens 14 S S 92

Abstract: CBV2 BRY56 Q68000-A803 Q68000-A803-S1 Q68000-A803-S3 IW transistor BRY 56 A Programmable unijunction D 823 transistor
Contextual Info: ESC D • 023StiOS 0004773 1 M S Ï E G , Programmable Unijunction Transistor BRY 56 T -3 - ^ - o f SIEMENS AKTIEN6ESELLSCHAF Programmable silicon planar unijunction transistor in TO 9 2 plastic package 10 A 3 DIN 4 1 8 6 8 . H8m ax Type O rdering cod e

2SK822

Abstract: TD-4002 TD400
Contextual Info: DATA SHEET Preliminary NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK822 DESCRIPTION The 2SK822 is N-channel MOS Field E ffect Power Transistor designed fo r sw itching power supplies, DC-DC PACKAGE D IM EN SIO N S in m illim e te rs (inches)

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from

hxtr 6101

Abstract: 4 ghz transistor 77Z2
Contextual Info: APPLICATION NOTE 967 CO M PO N EN TS A Low Noise 4 GHz Transistor Amplifier Using the HXTR-6101 Silicon Bipolar Transistor C O N TEN TS I. IN T R O D U C T IO N II . H P A C -7 0 G T P A C K A G E III. D E S IG N D A T A IV . IN P U T M A T C H IN G N E T W O R K

1.4464

Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S

silicon npn planar rf transistor sot 143

Abstract: 945 npn S822T
Contextual Info: S822T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption

ic 3845

Abstract: transistor IC 1557 b S822T 601 644 k 547 c 945 3268
Contextual Info: S822T Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption

D 823 transistor

Abstract: transistor PH ON 823 m
Contextual Info: Philips Semiconductors • bbSBTBl QDHimD bbfi H A P X Product specification N AUER PHILIPS/D ISCR ETE b?E D NPN 5 GHz wideband transistor DESCRIPTION NPN planar epitaxial transitor mounted in a plastic SOT223 envelope. It features excellent output voltage

BFG96

Abstract: TRANSISTOR P3 1351 NPN TRANSISTOR BFG32 V 904 RL 805 transistor SOT103 bfg96 scattering 803 0863 FP 801 h a 431 transistor
Contextual Info: -7- ^ P h ilip s S em icon du ctors ^ /-rZ -g Product sp ecification BFG96 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL D E S C R IP T IO N N P N transistor in a 4-lead dual-em itter plastic S O T 1 0 3 envelope. It is designed for application in w ideband am plifiers, such a s M A T V