TRANSISTOR D 2627 Search Results

TRANSISTOR D 2627

Abstract: Telefunken Electronic transistor D 2624 transistor k 2628 Telefunken 105 transistor 2all CB-108 ic 546 DIN 41872 transistor BU 104
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • ÔSHDDTb DOQRMfi? ■ BU 546 TTtliLEHFtyJDiSSES&i} electronic Crwtivel«chooioo«s Silicon NPN Power Transistor Applications; Switching mode power supply Features: • In triple diffusion technique • Short switching time • High reverse voltage

TRANSISTOR D 2627

Abstract: transistor D 2624 transistor k 2628 TRANSISTOR 1300 3B on 2518 transistor TCA 321 Telefunken Electronic 12A3 T0126 BU546
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • ÔSHDDTb DOQRMfi? ■ BU 546 TTtliLEHFtyJDiSSES&i} electronic Crwtivel«chooioo«s Silicon NPN Power Transistor Applications; Switching mode power supply Features: • In triple diffusion technique • Short switching time • High reverse voltage

transistor D 2624

Contextual Info: MOT OROL A SC XSTRS/R 4bE D F • b3b725H 0GT4b4b Ô « N O T t T -3 3 -C R M O TO ROLA SEMICONDUCTOR MRF427 TECHNICAL DATA MRF427A The R F Li ne 25 W (PEP) - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed p rim a rily fo r high-voltage a p p lic a tio n s as a high -p o w e r

pepi c

Abstract: TRANSISTOR D 2627 pepi cr MRF427 transistor D 2624 arco 469 trimmer capacitor arco TRIMMER capacitor 463 s49 transistor pepi TRIMMER capacitor 469
Contextual Info: MOTOROLA SC XSTRS/R 4bE F D m b3b7254 00T4b4b ô T - 3 3 "O S MOTOROLA SEM ICONDUCTOR MRF427 MRF427A TECHNICAL DATA The RF Line 25 W ( P E P ) - 3 0 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN S IL IC O N . . . designed p r im a r ily fo r hig h -v o lta g e a p p lic a tio n s as a h ig h -p o w e r

MRF861

Abstract: l6sh
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor D e s ig n e d fo r 2 4 V olt U H F la rg e - s ig n a l, c o m m o n e m itte r, c la s s A lin e a r a m p lifie r a p p lica tio n s in in d u stria l and c o m m e rc ia l e q u ip m e n t o p e ra tin g in the

2SK470

Abstract: 2sk47 btt4
Contextual Info: SEC j i i r / W Z M O S Field E ffe ct P o w e r T ra n sisto r J _ 2SK470 v ^ — MOS F E T X f m I i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2 S K 4 7 0 ii, F E T t\ X f y f > d c > ;< — i 7 • - t — • 'J 1 / —

2SK163

Abstract: 2sk163 transistor Free 9014 transistor 2sk163 PA33 SS 9014 TC-5466
Contextual Info: NEC j m = t= r iv r x J u n c t io n Field E ffe c t T r a n s is to r A 2SJ44 V 3 h = 7 > i> * 9 P-Channel Silicon Jun ction Field Effect Transistor Audio Frequercy Low Noise Amplifier ^ • » 0 / P A C K A G E D IM EN SIO N S ^/FEATU RES Unit : mm O ¡15I f EE, H i g h

TC-6252

Abstract: TC6252 WJ M64
Contextual Info: - r S • — h * SEC i ï r / V C om po un d Transistor Î 7 GN1F4Z ^ 4f J i ^ I U O y< yf 7 l*3 Ü X Î É tf l £ R i = 2 2 L X ^ Î 1 ( - P - Ì Ì ! m m k Q ) B O O o G A 1F 4 Z 3 t > - 7° U / 9 > 'J T l È f f l T ' ë ì e t ( T a — 25 °C) m

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS

TRANSISTOR D 2627

Abstract: SG3627 20ii2 SG3627J SG1627J
Contextual Info: SG1627/SG2627/SG3627 SILICON DUAL HIGH-CURRENT OUTPUT DRIVER LINEAR INTEG RATED CIRCUITS DESCRIPTION FEATURES The SG1627 series devices are monolithic, high-speed driver integrated circuits designed to interface digital control logic with high current loads. Each

Contextual Info: BLF7G27L-200PB Power LDMOS transistor Rev. 2 — 20 February 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance

transistor j449

Abstract: BLF7G27L-200PB TRANSISTOR BV 32 j449 transistor
Contextual Info: BLF7G27L-200PB Power LDMOS transistor Rev. 2 — 20 February 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance

BLF8G27LS-140V

Abstract: SOT1120B
Contextual Info: BLF8G27LS-140V Power LDMOS transistor Rev. 2 — 27 March 2013 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2600 MHz to 2700 MHz.

Contextual Info: BLF7G27L-135 Power LDMOS transistor Rev. 2 — 26 March 2012 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

BLF8G27LS-140V

Contextual Info: BLF8G27LS-140V Power LDMOS transistor Rev. 1 — 7 March 2013 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1.

TRANSISTOR D 2627

Contextual Info: SG1627ISG2627/SG3627 SILICON ΠN E ^L LINEAR INTEG RATED CIRCUITS DUAL HIGH-CURRENT OUTPUT DRIVER D E S C R IP T IO N FEA TU R ES The SG1627 series devices are monolithic, high-speed driver integrated circuits designed to interface digital control logic with high current loads. Each

SG3627

Abstract: TRANSISTOR D 2627 SG1627J SG1627 SG3627J constant current source with 500mA SG2627 SG1627J/883B SG1524 Scans-003836
Contextual Info: SG1627/SG2627/SG3627 SILIC O N GENERÄL LINEAR INTEGRATED CIRCUITS DUAL HIGH-CURRENT OUTPUT DRIVER D E S C R IP T IO N FE A TU R E S The SG1627 series devices are monolithic, high-speed driver integrated circuits designed to interface digital control logic with high current loads. Each

Contextual Info: BLF8G27LS-140 Power LDMOS transistor Rev. 1 — 28 March 2013 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance

Contextual Info: BLF8G27LS-140 Power LDMOS transistor Rev. 2 — 5 June 2013 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Contextual Info: BLF8G27LS-150V; BLF8G27LS-150GV Power LDMOS transistor Rev. 2 — 22 April 2013 Objective data sheet 1. Product profile 1.1 General description 150W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.

A5 GNE mosfet

Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

IRF7341 application note

Abstract: ccfl driver schematic lcd ccfl driver schematic AME9000 pwm variable frequency drive circuit diagram chop ccfl driver MARKING EA1 star delta connection LOGIC wiring circuit diagram 24PIN AME9001
Contextual Info: AME, Inc. CCFL Backlight Controller AME9001 n General Description n Pin Configuration The AME9001 controller provides a cost efficient means to drive single or multiple cold cathode fluorescent lamps CCFL . Specifically the AME9001 drives 3 external MOSFETs that, in turn, drive a wirewound transformer

ccfl backlight controller schematic

Abstract: AME9001AETH IRF7341 application note AME9000 MARKING EA1 circuit fluorescent tube 24v pwm variable frequency drive circuit diagram chop 24PIN 2N3906 AME9001
Contextual Info: AME, Inc. CCFL Backlight Controller AME9001 n General Description n Pin Configuration The AME9001 controller provides a cost efficient means to drive single or multiple cold cathode fluorescent lamps CCFL . Specifically the AME9001 drives 3 external MOSFETs that, in turn, drive a wirewound transformer