TRANSISTOR D 1979 Search Results

MJ10100

Abstract: all transistor transistor Common Base configuration AN875 transistor on semiconductor AN875 K.S. Terminals USE OF TRANSISTOR MJ10021 fastest finger first
Contextual Info: AN875/D Power Transistor Safe Operating Area Special Considerations for Switching Power Supplies http://onsemi.com Prepared by: Warren Schultz Applications Engineering APPLICATION NOTE Introduction The power transistor, in today’s switching power supply,

BF939

Abstract: 60S2 N322 transistor BF939 n3220
Contextual Info: 1 BF939. N AUER PHILIPS/DISCRETE ObE D fab53131 001E354 T T - 5 i - 17 i SILICON PLANAR TRANSISTOR P-N-P transistor in a TO-92 envelope intended fo r application as a gain controlled pream plifier in v.h.f. tuners. Q U IC K REFERENCE D A T A -V c B O max.

Contextual Info: it_ N AUER PHILIPS/DISCRETE QbE D BF939 bb53T31 0012324 T • . ~ — - —— ' T - 2J - I 7 SILICON PLANAR TRANSISTOR P-N-P transistor in a TO-92 envelope intended fo r application as a gain controlled preamplifier in v.h.f.

BD132

Abstract: BD131 NPN POWER TRANSISTOR SOT-32 M 5229 IC GDM2770 GQM2771 IEC134 transistor af 126 d5224 transistor Bd132
Contextual Info: BD132 P HILIPS I N T E R N A T I O N A L SbE D • 711Dfl2b G D I42770 T*i7 M P H I N r-33-^r SILICON PLANAR EPITAXIAL POW ER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131.

Contextual Info: DATA SHEET NEC / SILICON TRANSISTOR / 2SD1005 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 1005 is designed fo r audio frequency pow er am p lifie r app lication, especially in H y b rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS

2SD1005

Abstract: EL1202 2SB804 IEI-1213 DF RV transistor marking lp nec
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD 1005 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 10 05 is designed for audio frequency power am plifier application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard M iniature Package

transistor h44

Abstract: BD132 PNP POWER TRANSISTOR SOT-32 BD131 NPN POWER TRANSISTOR SOT-32
Contextual Info: BD132 _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope fo r general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE D A T A Collector-base voltage open em itter Collector-em itter voltage (open base)

BF967

Abstract: 60J2
Contextual Info: BF967, N AMER PHILIPS/DISCRETE ObE D • 1^53^31 0015356 b r-3iHC SiLICON PLANAR TRANSISTOR P-N-P transistor in a plastic T-package, primarily intended for application as gain controlled preamplifier in u.h.f. television tuners. QUICK REFERENCE DATA Collector-base voltage open emitter

Contextual Info: BF199 N AMER PHILIPS/DISCRETE DbE D bbS3T31 DOlSHbD T T-3/-2. V SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 variant envelope. The BF199 has a very low feedback capacitance and is intended for use in the output stage of a vision

Contextual Info: J _ N AMER PHILIPS/DISCRETE □ bE D BF979 bbSBTBl 00 E B 3 fl T t ^ - M - ist SILICON PLANAR TRANSISTOR P-N-P transistor in a subminiature plastic T-package, primarily intended for application in r.f. stages in u.h.f. tuners using p-i-n diode attenuators.

bf199

Abstract: transistor NPN BF199 BF199 transistor TRANSISTOR JG 92 t-31-21 IEC134 Silicon Epitaxial Planar Transistor philips transistor BF199
Contextual Info: BF199 N AMER PHILIPS/DISCRETE OLE D • bbS3T31 OQISHbD T ■ SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 variant envelope. The BF199 has a very low feedback capacitance and is intended for use in the output stage of a vision i.f. amplifier.

Contextual Info: •I bb53t131 OOBS^flS 450 B A P X N AMER PHILIPS/DISCRETE PXTA 14 b?E D JV NPN SMALL-SIGNAL DARLINGTON TRANSISTOR NPN small-signal darlington transistor, housed in a microminiature envelope SOT-89 . It is intended primarily for use in preamplifier input applications requiring a high input impedance.

Contextual Info: BD131 _ y v _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope for general purpose, medium power applications. P-N-P complement is BD132. Q U ICK R E F E R E N C E D A TA Collector-base voltage open emitter

Contextual Info: _ _ _ II BF967 N AMER PHILIPS/DISCRETE ObE D • b b S a ^ l ODlS3Ea b ■ ~ —— - — - ■^•-— — = ~ Zz :v ^ =— — • - —=— r-3!-/^ SILICON PLANAR TRANSISTOR V P-N-P transistor in a plastic T-package, primarily intended for application as gain controlled preamplifier

d1694

Abstract: transistor D132 d-1694 BD131 D131 transistor d1687 TRANSISTOR D131 BD132 T4060 bm cb hen iv
Contextual Info: BD131 JV _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope fo r general purpose, medium power applications. P-N-P complement is BD132. Q U IC K R E F E R E N C E D A T A VCBO max. 70 V Collector-emitter voltage open base

TVP1000

Abstract: BF979 sot 37
Contextual Info: BF979 Jl H AMER P H I L I P S / D I S C R E T E ' DbE 5 • fabSS^l 0 0 1 5 335 T - 3 M Ì T SILICON PLANAR TRANSISTOR P-N-P transistor in a subminiature plastic T-package, primarily intended for application in r.f. stages in u.h.f. tuners using p-i-n diode attenuators.

Contextual Info: DATA SHEET NEC / SILICON TRANSISTOR 2SD1000 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DE SC R IPTIO N The 2S D 1000 is designed fo r aud io frequency pow er a m p lifie r app lication, especially in H y b rid Integrated Circuits. FE A TU R E S • W orld Standard M in ia tu re Package

BD131

Abstract: D1891 D1687 TRANSISTOR D 1979 NPN POWER TRANSISTOR SOT-32 BD132 IEC134 Xpert transistor Bd132
Contextual Info: PHIL I P S I N T E R N A T I O N A L SbE D • 711 0 05 b QCm2 7 bO 04Ô « P H I N r - 3 3 - ò / SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope for general purpose, medium power applications. P-N-P complement is BD132.

SIT Static Induction Transistor

Abstract: 2SK180 thf-51 tokin sit transistor 2SK182E PLL for induction heating sit transistor 2SK183VE 2SK183 2SK182
Contextual Info: Another Tokin exclusive. Static Induction Ibansisiors SIT Static Induction Transistor w as in v e n te d by Professor Jun-ichi N ishizawa of Tohoku U niversity in 1950. After several s u b s e q u e n t technological d e v e lo p ­ m e n ts a n d im p ro v e m e n ts, it w a s first utilized in 1979 as a n industrial p o w e r SIT.

1GHz Oscillator

Abstract: RCA 444 RCA microwave oscillator colpitts oscillator construction 547 relay ic rca transistor TA7943 colpitts oscillator rca409 100 watts transistor s-band
Contextual Info: File IMo. 547 DUCB//D RF P o w er T ran sisto rs Solid State Division 40909 2-W, 2-GHz E m itte r-B a lla s te d Silicon N -P -N Overlay Transistor For Microwave Fundamental-Frequency Oscillators Features: • Emitter-ballasting resistors ■ 2-W {min. output at 2 GHz

724 motorola NPN Transistor

Abstract: motorola transistor r 724 MRF2010M motorola rf Power Transistor transistor amplifier 3 ghz 10 watts MRF201 MOTOROLA POWER TRANSISTOR 14 DS5802 Motorola 406 MRF2010
Contextual Info: Order this document by MRF2010M/D M MOTOROLA MRF2010M SEMICONDUCTORS P.O. BOX 20912 • PHOENIX, ARIZONA 85036 The RF Line 10W M ICRO W AVE POWER TRANSISTO R NPN SILICON MICROWAVE POWER TRANSISTOR . . . designed for Class B and C comm on base broadband amplifier

H4042

Abstract: 5473B 2SB800 TC-5473B tc5473
Contextual Info: • D— S • S'— h NEC y 'J 3 > h- =7 Silicon Transistor 2SB800 PNPX 'J H > h # m O t mm, — T -i K 7 o 2S D 1001t 4 '* - y ■( , JT"'To 1 iffjDD’j'J ïL , r i i ] h F E 'C " 'i_ o 1.5 + 0.1 P t = 2.0 W ( 0.7 mmX 16 cm2-fe7 S -y VCeo > - 8 0 V, hFE = 200 TY P.(Ic = - 5 0 mA

OPTOCOUPLER tl 521

Abstract: P621 optocoupler optocoupler p621 all transistor P621 P626 Transistor transistor p621 optocoupler P 521 TLP639 P621 TOSHIBa transistor marking p6
Contextual Info: 5 . Supplem entary Inform ations 5-1 C urrent Transfer Ratio CTR and Trigger LED C urrent (IFT) Ranking and M arking Stan d ard rank classifications are applied for the C T R on transistor-type photocouplers and for IFT on S C R , Triac-type photocouplers. Product indications corresponding to rank names are as show n below.

741 as buffer amplifier

Abstract: wein bridge oscillator high current fet amplifier schematic ICL8007 Monolithic Transistor Pair 741 opamp detector circuit using 741 OP-AMP wein bridge oscillator FET fet 741 wein bridge circuit
Contextual Info: G E SOLID STATE DS T-1R -IS A005 D E | 3fl7SDfll □ □E3t,S2 □ The IC L 8 0 0 7 — A High Perform ance FET — Inp u t Operational A m p lifier During the last 10 years the Field Effect Transistor has become the accepted device fo r amplifying low level