TRANSISTOR CR MARKING CODE Search Results
TRANSISTOR CR MARKING CODE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
TTA012 |
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PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
TPCP8514 |
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NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
TRANSISTOR CR MARKING CODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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sot-23 npn marking code cr
Abstract: sot23 marking CR CR SOT-23 sot23 code CR cq 037 G sot-23 MARKING CODE CR 2SC2411 sot23 marking CR A J V D transistor SOT23 CR transistor marking 04
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2SC2411 200mW OT-23 BL/SSSTC097 sot-23 npn marking code cr sot23 marking CR CR SOT-23 sot23 code CR cq 037 G sot-23 MARKING CODE CR 2SC2411 sot23 marking CR A J V D transistor SOT23 CR transistor marking 04 | |
D1980
Abstract: diode marking F5
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OCR Scan |
2SD1980F5 SC-63) D1980 2SD1980 2SD1980F5 2SD1980F5, diode marking F5 | |
SL 100 NPN Transistor base emitter collector
Abstract: SL 100 NPN Transistor BF 273 transistor transistor bf 274 BF 274 transistor 2SD2114 transistor CR NPN
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OCR Scan |
2SD2114K SC-59) 2SD2114K; 12rves 2SD2114K SL 100 NPN Transistor base emitter collector SL 100 NPN Transistor BF 273 transistor transistor bf 274 BF 274 transistor 2SD2114 transistor CR NPN | |
transistor CR NPN
Abstract: 2sd transistors equivalent
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OCR Scan |
2SD1383K SC-59) 2SD1383K; 2SD1383K Coll229 2SD1383K, transistor CR NPN 2sd transistors equivalent | |
transistors 2SAContextual Info: 2SA1514K 2SA1579 Transistor, PNP Features Dimensions U n its: mm • • • • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages package marking: 2SA1514K and 2SA1579; Ft-*, where ★ is hFE code high breakdown voltage: Vceo = -1 20 V complementary pair with 2SC3906K |
OCR Scan |
2SA1514K 2SA1579 SC-59) SC-70) 2SA1579; 2SC3906K 2SC4102 2SA1514K transistors 2SA | |
Contextual Info: 2SC4132 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SOT-89, SC-62) package 2SC4132 (MPT3) ♦0.2 4 .5 —0,1 package marking: 2SC4132; CB-*, where ★ is hFE code 1,6 * 0.1 zS _ ~ rr high breakdown voltage BVqjtq = 120 V +0.1 10.4—0 05 |
OCR Scan |
2SC4132 OT-89, SC-62) 2SC4132; 2SC4132 | |
TRANSISTOR BI 237
Abstract: NPN/TRANSISTOR BI 237
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OCR Scan |
2SD1766 OT-89, SC-62) 2SD1766; 2SB1188 max70 2SD1766 TRANSISTOR BI 237 NPN/TRANSISTOR BI 237 | |
2SA 016
Abstract: A1834 2SA series transistor transistor B 560
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OCR Scan |
2SA1834F5 SC-63) A1834 2SC5001 2SA1834F5 2SA 016 2SA series transistor transistor B 560 | |
113 marking code PNP transistor
Abstract: 2sb darlington Darlington pair pnp
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OCR Scan |
2SB852K SC-59) 2SB852K; 2SB852K 2SB852K, 113 marking code PNP transistor 2sb darlington Darlington pair pnp | |
2SD1834Contextual Info: 2SD1834 Transistor, NPN, Darlington pair Features Dimensions Units: mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD1834; D E*, where ★ is hFE code • Darlington connection provides high DC current gain (hFE), typically hFE = 15,000 at VCE = 3 V, lc = 500 mA |
OCR Scan |
2SD1834 OT-89, SC-62) 2SD1834; A/500 2SD1834 2SD1834, | |
transistor QB
Abstract: PNP TRANSISTOR SOT89
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OCR Scan |
2SB1424 OT-89, SC-62) 2SB1424; 2SB1424 transistor QB PNP TRANSISTOR SOT89 | |
MMBT2222Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBT2222 14E D 7^ 4145 Q0075S3 T | NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS (T,=25°C Characteristic CoBector-Base Voltage Codector-Emltter Voltage Emitter-Base Voltage Collector Current |
OCR Scan |
1b414E 0007253M MMBT2222 lo-10mA, | |
2SD1664
Abstract: marking 2sd1664
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OCR Scan |
2SD1664 SC-62) 2SD1664; 500mA/50 2SB1132 2SD1664 marking 2sd1664 | |
SC marking code NPN transistorContextual Info: 2SD1782K Transistor, NPN Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD1782K; A J *. where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = 0.2 V at lc/lB = 0.5 A/50 mA high breakdown voltage |
OCR Scan |
2SD1782K SC-59) 2SD1782K; 2SB1198K 2SD1782K SC marking code NPN transistor | |
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TRANSISTOR b1181
Abstract: b1181 2SB1181F5
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OCR Scan |
2SB1181F5 SC-63) B1181 2SD1733 2SB1181F5 TRANSISTOR b1181 b1181 | |
Contextual Info: 2SC2413K 2SC4098 Transistor, NPN Features Dimensions U n its : mm available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages package marking: 2SC2413K, 2SC4098; A-*, where ★ is hFE code 2SC2413K (SMT3) 2.8 ± 0.2 1 .9 ± 0 .2 0 .9 5 0 .9 5 2.4 (2 )[ ] |
OCR Scan |
2SC2413K 2SC4098 SC-59) SC-70) 2SC2413K, 2SC4098; 2SC4098 | |
A1807
Abstract: pnp transistor 600V 2SA1807F5 transistor marking code NW transistors 2SA transistor 2SA 6 J transistor 2SA 600v PNP -600v
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OCR Scan |
2SA1807F5 SC-63) A1807 nw-60 pnp transistor 600V 2SA1807F5 transistor marking code NW transistors 2SA transistor 2SA 6 J transistor 2SA 600v PNP -600v | |
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2411 FEATURES z Power dissipation: PCM=200mW z High ICM MAX. ,I CM(MAX.)=0.5mA. z Low VCE(sat). z Complements the 2SA1036. Pb Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor |
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2SC2411 200mW 2SA1036. OT-23 BL/SSSTC097 | |
transistor marking PB
Abstract: transistor cr marking transistor CR marking G SOT323 Transistor 2SC4097W marking CQ marking code cp transistor CR NPN Transistor marking code K NPN Silicon Epitaxial Planar Transistor
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2SC4097W 200mW OT-323 BL/SSSTF003 transistor marking PB transistor cr marking transistor CR marking G SOT323 Transistor 2SC4097W marking CQ marking code cp transistor CR NPN Transistor marking code K NPN Silicon Epitaxial Planar Transistor | |
13003F
Abstract: 13003a 13003a TRANSISTOR 13003c transistor 13003F 13003e 13003c TRANSISTOR eu 13003e 13003b S W 13003a
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CR13003 C-120 CR13003Rev230106E 13003F 13003a 13003a TRANSISTOR 13003c transistor 13003F 13003e 13003c TRANSISTOR eu 13003e 13003b S W 13003a | |
mosfet nA idss
Abstract: transistor cr marking "MARKING CODE CR" mosfet low vgs
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CMRDM3590 CMRDM3590 OT-963 200mA 25-February mosfet nA idss transistor cr marking "MARKING CODE CR" mosfet low vgs | |
transistor cr markingContextual Info: CMRDM3590 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3590 is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS |
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CMRDM3590 CMRDM3590 125mW OT-963 125mA 200mA transistor cr marking | |
transistor 13003FContextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CR13003 TO126 Plastic Package EC B Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage |
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CR13003 C-120 CR13003Rev230106E transistor 13003F | |
transistor cr markingContextual Info: CMRDM3590 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3590 is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS |
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CMRDM3590 CMRDM3590 125mW OT-963 200mA transistor cr marking |