TRANSISTOR CR MARKING CODE Search Results

sot-23 npn marking code cr

Abstract: sot23 marking CR CR SOT-23 sot23 code CR cq 037 G sot-23 MARKING CODE CR 2SC2411 sot23 marking CR A J V D transistor SOT23 CR transistor marking 04
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2411 FEATURES Pb z Power dissipation: PCM=200mW Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor SOT-23 ORDERING INFORMATION Type No. 2SC2411 Marking Package Code

D1980

Abstract: diode marking F5
Contextual Info: 2SD1980F5 Transistor, NPN, Darlington pair Features Dimensions Units : mm • • available in CPT F5 (SC-63) package package marking: D1980*Q, where ★ is hFE code and □ is lot number • Darlington connection provides high DC current gain (hFE) damper diode is incorporated

SL 100 NPN Transistor base emitter collector

Abstract: SL 100 NPN Transistor BF 273 transistor transistor bf 274 BF 274 transistor 2SD2114 transistor CR NPN
Contextual Info: 2SD2114K Transistor, NPN Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD2114K; BB-*, where ★ is hFE code |E3 S i 24 Q- • high DC current amplification, typically hFE = 1200 • high emitter-base voltage,

transistor CR NPN

Abstract: 2sd transistors equivalent
Contextual Info: 2SD1383K Transistor, NPN, Darlington pair Features Dimensions Units: mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD1383K; W * , where ★ is hFE code • Darlington connection provides high hFE = 50,000 (typically) at 100 mA • built-in resistor of approximately 4 k£2

transistors 2SA

Contextual Info: 2SA1514K 2SA1579 Transistor, PNP Features Dimensions U n its: mm • • • • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages package marking: 2SA1514K and 2SA1579; Ft-*, where ★ is hFE code high breakdown voltage: Vceo = -1 20 V complementary pair with 2SC3906K

Contextual Info: 2SC4132 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SOT-89, SC-62) package 2SC4132 (MPT3) ♦0.2 4 .5 —0,1 package marking: 2SC4132; CB-*, where ★ is hFE code 1,6 * 0.1 zS _ ~ rr high breakdown voltage BVqjtq = 120 V +0.1 10.4—0 05

TRANSISTOR BI 237

Abstract: NPN/TRANSISTOR BI 237
Contextual Info: 2SD1766 Transistor, NPN Features • available in MPT3 MPT, SOT-89, SC-62 package • package marking: 2SD1766; DB-fr, where * is hFE code • Pq = 2 W, when mounted on 40 x 40 x 0.7 mm ceramic substrate • low collector saturation voltage, typically, VCE(Sat)=0.16 V for

2SA 016

Abstract: A1834 2SA series transistor transistor B 560
Contextual Info: 2SA1834F5 Transistor, PNP Features Dimensions Units : mm available in CPT F5 (SC-63) package 2SA1834F5 (CPT F5) package marking: A1834^Q, where ★ is hFE code and □ is lot number low collector saturation voltage V c E ( s a t) = - 0 . 1 6 V for l c = - 4 A,

113 marking code PNP transistor

Abstract: 2sb darlington Darlington pair pnp
Contextual Info: 2SB852K Transistor, PNP, Darlington pair Features Dimensions Units : mm available in SMT3 (SMT, SC-59) package 2SB852K (SMT3) package marking: 2SB852K; U * where ★ is hFE code 1 9 *0 2 0.8 Min. 00*0 095 Darlington connection provides high DC current gain (hFE)

2SD1834

Contextual Info: 2SD1834 Transistor, NPN, Darlington pair Features Dimensions Units: mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD1834; D E*, where ★ is hFE code • Darlington connection provides high DC current gain (hFE), typically hFE = 15,000 at VCE = 3 V, lc = 500 mA

transistor QB

Abstract: PNP TRANSISTOR SOT89
Contextual Info: 2SB1424 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1424; A E *, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.5 V (max) for lc/lB = -2 A/-0.1 A

MMBT2222

Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBT2222 14E D 7^ 4145 Q0075S3 T | NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS (T,=25°C Characteristic CoBector-Base Voltage Codector-Emltter Voltage Emitter-Base Voltage Collector Current

2SD1664

Abstract: marking 2sd1664
Contextual Info: 2SD1664 Transistor, NPN Features Dimensions Units : mm 2SD1664 (MPT3) 4j .e5 -+0 0 .'2 1 u> i.e ± o . i R I r-fl rm : i ! ! ! ! ! in csi Tl (1) J Œ I î M 1.0 ±0.3 available in MPT3 (MPT, SC-62) package package marking: 2SD1664; DA*, where ★ is hFE code

SC marking code NPN transistor

Contextual Info: 2SD1782K Transistor, NPN Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD1782K; A J *. where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = 0.2 V at lc/lB = 0.5 A/50 mA high breakdown voltage

TRANSISTOR b1181

Abstract: b1181 2SB1181F5
Contextual Info: 2SB1181F5 Transistor, PNP Features Dimensions Units : mm • available in C P T F5 (SC-63) package • package marking: B1181 ★□, where ★ is hFE code and □ is lot number • hig h b re a k d o w n v o lta g e a n d la rg e c u rre n t ca p a b ility : V q e o = - 8 ° V,

Contextual Info: 2SC2413K 2SC4098 Transistor, NPN Features Dimensions U n its : mm available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages package marking: 2SC2413K, 2SC4098; A-*, where ★ is hFE code 2SC2413K (SMT3) 2.8 ± 0.2 1 .9 ± 0 .2 0 .9 5 0 .9 5 2.4 (2 )[ ]

A1807

Abstract: pnp transistor 600V 2SA1807F5 transistor marking code NW transistors 2SA transistor 2SA 6 J transistor 2SA 600v PNP -600v
Contextual Info: 2S A 1807F5 Transistor, PNP Features • available in CPT F5 SC-63 package • package marking: A1807-AQ, where ★ is hFE code and □ is lot number • high breakdown voltage, BVceo = ~600 V • low collector saturation voltage, typically VCE(sat) = -0.25 V for

Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2411 FEATURES z Power dissipation: PCM=200mW z High ICM MAX. ,I CM(MAX.)=0.5mA. z Low VCE(sat). z Complements the 2SA1036. Pb Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor

transistor marking PB

Abstract: transistor cr marking transistor CR marking G SOT323 Transistor 2SC4097W marking CQ marking code cp transistor CR NPN Transistor marking code K NPN Silicon Epitaxial Planar Transistor
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC4097W FEATURES z Excellent hFE linearity. z Power dissipation:PCM=200mW Pb Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No.

13003F

Abstract: 13003a 13003a TRANSISTOR 13003c transistor 13003F 13003e 13003c TRANSISTOR eu 13003e 13003b S W 13003a
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CR13003 TO126 Plastic Package EC B Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage

mosfet nA idss

Abstract: transistor cr marking "MARKING CODE CR" mosfet low vgs
Contextual Info: Central CMRDM3590 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3590 is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and

transistor cr marking

Contextual Info: CMRDM3590 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3590 is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS

transistor 13003F

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CR13003 TO126 Plastic Package EC B Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage

transistor cr marking

Contextual Info: CMRDM3590 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3590 is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS