TRANSISTOR CR MARKING CODE Search Results

TRANSISTOR CR MARKING CODE Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR CR MARKING CODE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
sot-23 npn marking code cr Abstract: sot23 marking CR CR SOT-23 sot23 code CR cq 037 G sot-23 MARKING CODE CR 2SC2411 sot23 marking CR A J V D transistor SOT23 CR transistor marking 04 Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2411 FEATURES Pb z Power dissipation: PCM=200mW Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor SOT-23 ORDERING INFORMATION Type No. 2SC2411 Marking Package Code	Original	2SC2411 200mW OT-23 BL/SSSTC097 sot-23 npn marking code cr sot23 marking CR CR SOT-23 sot23 code CR cq 037 G sot-23 MARKING CODE CR 2SC2411 sot23 marking CR A J V D transistor SOT23 CR transistor marking 04	PDF
D1980 Abstract: diode marking F5 Contextual Info: 2SD1980F5 Transistor, NPN, Darlington pair Features Dimensions Units : mm • • available in CPT F5 (SC-63) package package marking: D1980*Q, where ★ is hFE code and □ is lot number • Darlington connection provides high DC current gain (hFE) damper diode is incorporated	OCR Scan	2SD1980F5 SC-63) D1980 2SD1980 2SD1980F5 2SD1980F5, diode marking F5	PDF
SL 100 NPN Transistor base emitter collector Abstract: SL 100 NPN Transistor BF 273 transistor transistor bf 274 BF 274 transistor 2SD2114 transistor CR NPN Contextual Info: 2SD2114K Transistor, NPN Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD2114K; BB-*, where ★ is hFE code \|E3 S i 24 Q- • high DC current amplification, typically hFE = 1200 • high emitter-base voltage,	OCR Scan	2SD2114K SC-59) 2SD2114K; 12rves 2SD2114K SL 100 NPN Transistor base emitter collector SL 100 NPN Transistor BF 273 transistor transistor bf 274 BF 274 transistor 2SD2114 transistor CR NPN	PDF
transistor CR NPN Abstract: 2sd transistors equivalent Contextual Info: 2SD1383K Transistor, NPN, Darlington pair Features Dimensions Units: mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD1383K; W * , where ★ is hFE code • Darlington connection provides high hFE = 50,000 (typically) at 100 mA • built-in resistor of approximately 4 k£2	OCR Scan	2SD1383K SC-59) 2SD1383K; 2SD1383K Coll229 2SD1383K, transistor CR NPN 2sd transistors equivalent	PDF
transistors 2SA Contextual Info: 2SA1514K 2SA1579 Transistor, PNP Features Dimensions U n its: mm • • • • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages package marking: 2SA1514K and 2SA1579; Ft-*, where ★ is hFE code high breakdown voltage: Vceo = -1 20 V complementary pair with 2SC3906K	OCR Scan	2SA1514K 2SA1579 SC-59) SC-70) 2SA1579; 2SC3906K 2SC4102 2SA1514K transistors 2SA	PDF
Contextual Info: 2SC4132 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SOT-89, SC-62) package 2SC4132 (MPT3) ♦0.2 4 .5 —0,1 package marking: 2SC4132; CB-, where ★ is hFE code 1,6 0.1 zS _ ~ rr high breakdown voltage BVqjtq = 120 V +0.1 10.4—0 05	OCR Scan	2SC4132 OT-89, SC-62) 2SC4132; 2SC4132	PDF
TRANSISTOR BI 237 Abstract: NPN/TRANSISTOR BI 237 Contextual Info: 2SD1766 Transistor, NPN Features • available in MPT3 MPT, SOT-89, SC-62 package • package marking: 2SD1766; DB-fr, where * is hFE code • Pq = 2 W, when mounted on 40 x 40 x 0.7 mm ceramic substrate • low collector saturation voltage, typically, VCE(Sat)=0.16 V for	OCR Scan	2SD1766 OT-89, SC-62) 2SD1766; 2SB1188 max70 2SD1766 TRANSISTOR BI 237 NPN/TRANSISTOR BI 237	PDF
2SA 016 Abstract: A1834 2SA series transistor transistor B 560 Contextual Info: 2SA1834F5 Transistor, PNP Features Dimensions Units : mm available in CPT F5 (SC-63) package 2SA1834F5 (CPT F5) package marking: A1834^Q, where ★ is hFE code and □ is lot number low collector saturation voltage V c E ( s a t) = - 0 . 1 6 V for l c = - 4 A,	OCR Scan	2SA1834F5 SC-63) A1834 2SC5001 2SA1834F5 2SA 016 2SA series transistor transistor B 560	PDF
113 marking code PNP transistor Abstract: 2sb darlington Darlington pair pnp Contextual Info: 2SB852K Transistor, PNP, Darlington pair Features Dimensions Units : mm available in SMT3 (SMT, SC-59) package 2SB852K (SMT3) package marking: 2SB852K; U * where ★ is hFE code 1 9 0 2 0.8 Min. 000 095 Darlington connection provides high DC current gain (hFE)	OCR Scan	2SB852K SC-59) 2SB852K; 2SB852K 2SB852K, 113 marking code PNP transistor 2sb darlington Darlington pair pnp	PDF
2SD1834 Contextual Info: 2SD1834 Transistor, NPN, Darlington pair Features Dimensions Units: mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD1834; D E*, where ★ is hFE code • Darlington connection provides high DC current gain (hFE), typically hFE = 15,000 at VCE = 3 V, lc = 500 mA	OCR Scan	2SD1834 OT-89, SC-62) 2SD1834; A/500 2SD1834 2SD1834,	PDF
transistor QB Abstract: PNP TRANSISTOR SOT89 Contextual Info: 2SB1424 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1424; A E *, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.5 V (max) for lc/lB = -2 A/-0.1 A	OCR Scan	2SB1424 OT-89, SC-62) 2SB1424; 2SB1424 transistor QB PNP TRANSISTOR SOT89	PDF
MMBT2222 Contextual Info: SAMSUNG SEMICONDUCTOR INC MMBT2222 14E D 7^ 4145 Q0075S3 T \| NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS (T,=25°C Characteristic CoBector-Base Voltage Codector-Emltter Voltage Emitter-Base Voltage Collector Current	OCR Scan	1b414E 0007253M MMBT2222 lo-10mA,	PDF
2SD1664 Abstract: marking 2sd1664 Contextual Info: 2SD1664 Transistor, NPN Features Dimensions Units : mm 2SD1664 (MPT3) 4j .e5 -+0 0 .'2 1 u> i.e ± o . i R I r-fl rm : i ! ! ! ! ! in csi Tl (1) J Œ I î M 1.0 ±0.3 available in MPT3 (MPT, SC-62) package package marking: 2SD1664; DA*, where ★ is hFE code	OCR Scan	2SD1664 SC-62) 2SD1664; 500mA/50 2SB1132 2SD1664 marking 2sd1664	PDF
SC marking code NPN transistor Contextual Info: 2SD1782K Transistor, NPN Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD1782K; A J *. where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = 0.2 V at lc/lB = 0.5 A/50 mA high breakdown voltage	OCR Scan	2SD1782K SC-59) 2SD1782K; 2SB1198K 2SD1782K SC marking code NPN transistor	PDF

TRANSISTOR b1181 Abstract: b1181 2SB1181F5 Contextual Info: 2SB1181F5 Transistor, PNP Features Dimensions Units : mm • available in C P T F5 (SC-63) package • package marking: B1181 ★□, where ★ is hFE code and □ is lot number • hig h b re a k d o w n v o lta g e a n d la rg e c u rre n t ca p a b ility : V q e o = - 8 ° V,	OCR Scan	2SB1181F5 SC-63) B1181 2SD1733 2SB1181F5 TRANSISTOR b1181 b1181	PDF
Contextual Info: 2SC2413K 2SC4098 Transistor, NPN Features Dimensions U n its : mm available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages package marking: 2SC2413K, 2SC4098; A-*, where ★ is hFE code 2SC2413K (SMT3) 2.8 ± 0.2 1 .9 ± 0 .2 0 .9 5 0 .9 5 2.4 (2 )[ ]	OCR Scan	2SC2413K 2SC4098 SC-59) SC-70) 2SC2413K, 2SC4098; 2SC4098	PDF
A1807 Abstract: pnp transistor 600V 2SA1807F5 transistor marking code NW transistors 2SA transistor 2SA 6 J transistor 2SA 600v PNP -600v Contextual Info: 2S A 1807F5 Transistor, PNP Features • available in CPT F5 SC-63 package • package marking: A1807-AQ, where ★ is hFE code and □ is lot number • high breakdown voltage, BVceo = ~600 V • low collector saturation voltage, typically VCE(sat) = -0.25 V for	OCR Scan	2SA1807F5 SC-63) A1807 nw-60 pnp transistor 600V 2SA1807F5 transistor marking code NW transistors 2SA transistor 2SA 6 J transistor 2SA 600v PNP -600v	PDF
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC2411 FEATURES z Power dissipation: PCM=200mW z High ICM MAX. ,I CM(MAX.)=0.5mA. z Low VCE(sat). z Complements the 2SA1036. Pb Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor	Original	2SC2411 200mW 2SA1036. OT-23 BL/SSSTC097	PDF
transistor marking PB Abstract: transistor cr marking transistor CR marking G SOT323 Transistor 2SC4097W marking CQ marking code cp transistor CR NPN Transistor marking code K NPN Silicon Epitaxial Planar Transistor Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC4097W FEATURES z Excellent hFE linearity. z Power dissipation:PCM=200mW Pb Lead-free APPLICATIONS z NPN Silicon Epitaxial Planar Transistor. SOT-323 ORDERING INFORMATION Type No.	Original	2SC4097W 200mW OT-323 BL/SSSTF003 transistor marking PB transistor cr marking transistor CR marking G SOT323 Transistor 2SC4097W marking CQ marking code cp transistor CR NPN Transistor marking code K NPN Silicon Epitaxial Planar Transistor	PDF
13003F Abstract: 13003a 13003a TRANSISTOR 13003c transistor 13003F 13003e 13003c TRANSISTOR eu 13003e 13003b S W 13003a Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CR13003 TO126 Plastic Package EC B Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage	Original	CR13003 C-120 CR13003Rev230106E 13003F 13003a 13003a TRANSISTOR 13003c transistor 13003F 13003e 13003c TRANSISTOR eu 13003e 13003b S W 13003a	PDF
mosfet nA idss Abstract: transistor cr marking "MARKING CODE CR" mosfet low vgs Contextual Info: Central CMRDM3590 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3590 is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and	Original	CMRDM3590 CMRDM3590 OT-963 200mA 25-February mosfet nA idss transistor cr marking "MARKING CODE CR" mosfet low vgs	PDF
transistor cr marking Contextual Info: CMRDM3590 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3590 is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS	Original	CMRDM3590 CMRDM3590 125mW OT-963 125mA 200mA transistor cr marking	PDF
transistor 13003F Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CR13003 TO126 Plastic Package EC B Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage	Original	CR13003 C-120 CR13003Rev230106E transistor 13003F	PDF
transistor cr marking Contextual Info: CMRDM3590 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3590 is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS	Original	CMRDM3590 CMRDM3590 125mW OT-963 200mA transistor cr marking	PDF

TRANSISTOR CR MARKING CODE Search Results

TRANSISTOR CR MARKING CODE Result Highlights (5)

TRANSISTOR CR MARKING CODE Datasheets Context Search

sot-23 npn marking code cr

D1980

SL 100 NPN Transistor base emitter collector

transistor CR NPN

transistors 2SA

TRANSISTOR BI 237

2SA 016

113 marking code PNP transistor

2SD1834

transistor QB

MMBT2222

2SD1664

SC marking code NPN transistor

TRANSISTOR b1181

A1807

transistor marking PB

13003F

mosfet nA idss

transistor cr marking

transistor 13003F

transistor cr marking