TRANSISTOR CR MARKING CODE Search Results

TRANSISTOR BI 237

Abstract: NPN/TRANSISTOR BI 237
Contextual Info: 2SD1766 Transistor, NPN Features • available in MPT3 MPT, SOT-89, SC-62 package • package marking: 2SD1766; DB-fr, where * is hFE code • Pq = 2 W, when mounted on 40 x 40 x 0.7 mm ceramic substrate • low collector saturation voltage, typically, VCE(Sat)=0.16 V for

2SD1664

Abstract: marking 2sd1664
Contextual Info: 2SD1664 Transistor, NPN Features Dimensions Units : mm 2SD1664 (MPT3) 4j .e5 -+0 0 .'2 1 u> i.e ± o . i R I r-fl rm : i ! ! ! ! ! in csi Tl (1) J Œ I î M 1.0 ±0.3 available in MPT3 (MPT, SC-62) package package marking: 2SD1664; DA*, where ★ is hFE code

2SA amplifier

Abstract: H1000I 2SA1514K 2SA1579 2SC3906K 2SC4102 transistor 2SA transistor PNP
Contextual Info: 2SA1514K 2SA1579 Transistor, PNP Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: 2SA1514K and 2SA1579; R-*, where ★ is hFE code • • high breakdown voltage: V qeo = -120 V complementary pair with 2SC3906K

Contextual Info: 2SC2413K 2SC4098 Transistor, NPN Features Dimensions U n its : mm available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages package marking: 2SC2413K, 2SC4098; A-*, where ★ is hFE code 2SC2413K (SMT3) 2.8 ± 0.2 1 .9 ± 0 .2 0 .9 5 0 .9 5 2.4 (2 )[ ]

A1807

Abstract: pnp transistor 600V 2SA1807F5 transistor marking code NW transistors 2SA transistor 2SA 6 J transistor 2SA 600v PNP -600v
Contextual Info: 2S A 1807F5 Transistor, PNP Features • available in CPT F5 SC-63 package • package marking: A1807-AQ, where ★ is hFE code and □ is lot number • high breakdown voltage, BVceo = ~600 V • low collector saturation voltage, typically VCE(sat) = -0.25 V for

mosfet nA idss

Abstract: transistor cr marking "MARKING CODE CR" mosfet low vgs
Contextual Info: Central CMRDM3590 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3590 is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and

transistor cr marking

Contextual Info: CMRDM3590 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMRDM3590 is an Enhancement-mode Dual N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS

transistor 13003F

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON POWER TRANSISTOR CR13003 TO126 Plastic Package EC B Suitable for Lighting, Switching Regulator and Motor Control ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Base Voltage

NEC 10F triac

Abstract: TLP250 MOSFET DRIVER p421f p421 coupler P181 Photocoupler tlp3065 TLP3083 TLP520 TLP250 MOSFET DRIVER application note 5252 F 4-pin
Contextual Info: 2008-3 PRODUCT GUIDE Photocouplers and Photorelays s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Product Index Part Number Package Output Page TLP102 TLP106 TLP112 TLP112A TLP113 TLP114A TLP114A IGM TLP115 TLP115A TLP116 TLP117

2E104

Abstract: CR2B104C121 transistor CR CR2B104C NITSUKO transistor cr marking 104C 2000M transistor cr marking code surge absorber
Contextual Info: サージ吸収用 CR 複合部品 Surge Absorber CR unit ＣＲ ＳＥＲＩＥＳ サ−ジ吸収用 Surge absorber メタライズドポリエステルフィルムコンデンサと抵抗器を直列 接続した小型軽量品 難燃性エポキシ樹脂外装（UL９４V−０）

Contextual Info: EPSON PF400-07 SCI7630M/C Series Switching Regulator I DESCRIPTION •Step-up Switching Regulator 1.5V 2.0, 2.2, 2.35, 2.4, 2.7, 2.8, 3.0, 3.1, 3.5, 3.7, 4.2 ,5.0V •L o w Operating Voltage(Min 0.9V) •Voltage Detecting function, Battery Back-up function

surge absorber

Abstract: en132400 07 nitsuko CRKH22E104C transistor cr marking 104C en132400 275v IEC60384-1 Thyristor triac D 1414 transistor
Contextual Info: UL,VDE 安全規格認定 サージ吸収用 CR 複合部品 UL, VDE Safety Standard Surge Absorber CR unit ＣＲＫＨ ＳＥＲＩＥＳ サ−ジ吸収用 Surge absorber UL, VDE 安全規格認定品 難燃性エポキシ樹脂外装（UL94V-0） 電磁開閉器電磁弁、モ−タ等より発生するサ−ジ電圧の吸

Contextual Info: EPSON SCI7630M/C Series Switching Regulator # Step-up Switching Regulator 1.5V -» 2.0, 2.2, 2.35, 2.4, 2.7, 2.8, 3.0, 3.1, 3.5, 3.7, 4.2 ,5.0V # L o w Operating Voltage (Min 0.9V) # Voltage Detecting function, Battery Back-up function (SCI7631M) • DESCRIPTION

BR c945 transistor

Abstract: TRANSISTOR C945 C945 2c945 C945L C945 NPN transistor c945 TRANSISTOR DATASHEET c945 transistor transistor npn c945 C945 plastic
Contextual Info: C945 60V, 0.15A, 200mW NPN Plastic Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES    Excellent hFE Linearity Low noise Complementary to A733 A L 3 3 C B Top View

SMD MARKING CODE SEIKO EPSON

Abstract: transistor smd marking CR 32,768 SMD crystal Component smd transistor marking code cr SMD INDUCTOR marking code 6 pin TRANSISTOR SMD CODE CAA TRANSISTOR SMD MARKING CODE 604 SCI7631MBA transistor smd marking CR PD diode MARKING CODE CG
Contextual Info: PF1105-01 SCI7630M Series SCI7630M Series Switching Regulator ge lta o V n w tio Lo pera cts O rodu P Step-up Switching Regulator 2.0, 2.2, 2.35, 2.4, 2.7, 2.8, 3.0, 3.1, 3.5, 3.7, 4.2 ,5.0V 1.5V Low Operating Voltage (Min 0.9V) Voltage Detecting function, Battery Back-up function (SCI7631M)

IC 4016

Abstract: data sheet for IC 4016 4016 ic data sheet of ic 4016 SRA2219EF
Contextual Info: SRA2219EF Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

transistor cr marking code

Abstract: transistor marking CR SRA2219E
Contextual Info: SRA2219E Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

transistor marking CR

Abstract: 13001 TRANSISTOR transistor cr marking SRA2219U KSR-3035-000
Contextual Info: SRA2219U Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process

Transistor SJ 2517

Abstract: transistor SJ 2518 marking code SJ transistors sj 2518 sj 2517 transistor BF 184 NPN transistor TRANSISTORS CASE X01 buv70 SJ 2517 top marking b3a
Contextual Info: 17E D TELEFUNKEN ELECTRONIC • ODD^SbS BUV70 ■¡nyilFttJlMlM electronic Cr*Miv«■fcchnotogte* T -33-13 Silicon NPN Power Transistors Applications: Motor controls, switching mode power supplies features: • Implantation • • High reverse voltage • Triple diffusion

502a hall sensor

Abstract: hall sensor smd 502A TO-92UA SMD Hall sensors code se micronas ordering codes SMD Hall sensors code C to92ua hal 502a
Contextual Info: Hall Sensors: Ordering Codes, Packaging, Handling Edition Sept. 12, 2001 6200-249-2E Hall Sensors: Ordering Codes, Packaging, Handling Contents Page Section Title 3 3 4 4 4 4 5 6 6 7 1. 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 Ordering Codes for Hall Sensors Overview

transistor c 2053

Abstract: 2PB710AR 2PB710Q 2PB710R 2PB710S 2PB710 2PB710A 2PB710AQ 2PD602 2PD602A
Contextual Info: Phi IIpa Se mieond ucto rs ^ 711D flB b G Q VOD lfl 3S7 • P H IN PNP general purpose transistor Oblectlve specification 2PB710; 2PB710A PIN CONFIGURATION FEATURES • Large collector current • Low collector-emrtter saturation voltage. _ DESCRIPTION _ 2

2PB710R

Abstract: 2PB710S transistor t05 2PB710AR 2PB710Q 2PB710 2PB710A 2PB710AQ 2PB710AS 2PD602
Contextual Info: Philips Semiconductors Ml 7 1 1 Qö c?b GOVODlfl 357 H P H IN PNP general purpose transistor FEATURES Objective specification 2PB710; 2PB710A PIN CONFIGURATION • Large collector current • Low collector-emitter saturation voltage. c DESCRIPTION <> PNP transistor in a plastic SC59

Contextual Info: SIEMENS BC 846S NPN Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with high matching in one package 11 az t.£. FI iïl R Lü

Contextual Info: 36VHigh-performance, High-reliability Withstand Voltage Stepping Motor Driver BD63715AEFV ●General Description BD63715AEFV is a bipolar low-consumption driver that driven by PWM current. Rated power supply voltage of the device is 36 V, and rated output current is 1.5 A.