TRANSISTOR CE 014 Search Results

Contextual Info: PD - 96334 AUTOMOTIVE GRADE AUIRGS30B60K AUIRGSL30B60K INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features • • • • • • • Low V CE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA Positive V CE(on) Temperature Coefficient

IGBT 4000V

Abstract: AN-994 C-150 AUIRGSL30B60K AUIRGS30B60K AUGS30B60K IGBT driver 4000V
Contextual Info: PD - 96334 AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR AUIRGS30B60K AUIRGSL30B60K C VCES = 600V Features • • • • • • • Low V CE on Non Punch Through IGBT Technology 10µs Short Circuit Capability Square RBSOA Positive V CE(on) Temperature Coefficient

Contextual Info: PD - 9.1600 International I R Rectifyler IRG4BC20K PR ELIM IN A R Y Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • High short circuit rating optimized for motor control, tsc = 1 0 jjs, @ 360V V CE start , T j= 1 2 5 ° C ,

Contextual Info: SEME LAB 37E LTD JUL 0 6 1988 0133107 ]> SEMELAB BUW89 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for designs requiring devices with very low saturation voltage and high gain for reduced load operation MECHANICAL DATA D im ensions in mm FEATU RES • L O W V ce sat

Contextual Info: PD -91734 International IO R R e c tifi ST IRG4BC10KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • High sh o rt circu it rating op tim ize d for m otor control, tsc =10 as, @ 3 6 0 V V CE (start , T j = 1 2 5 °C ,

IRG4BC10KD

Contextual Info: PD -91 73 4A International IO R R e c tifi ST IRG4BC10KD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • High sh o rt circu it rating op tim ize d fo r m otor control, tsC = 1 0 js, @ 3 6 0 V V CE (start , T j = 125°C,

RCA-CA3018

Abstract: RCA-CA3083 ICAN-5296 ICAN5296 CA3083 "rca application note" rca ican5296 24 "transistor array" rca transistor RCA Solid State Power Transistor
Contextual Info: G E SOLID STATE Gl D E I 3 0 7 5 0 0 1 □□mt.Dt. 3 | - r» •— CA3083 General-Purpose High-Current N-P-N Transistor Array Features: ■ High /&’ 100 mA max. ■ Low l/cE*at a/ 50 mA : 0.7V max. n M atched p a ir (Q1 and 02) Vio (Vbe matched): ± 5 mV max.

Step-Down

Abstract: XC9235 XC9236 XC9237
Contextual Info: XC9235/XC9236/XC9237 Series ETR0514-014 600mA Driver Tr. Built-In, Synchronous Step-Down DC/DC Converters ☆GreenOperation Compatible •GENERAL DESCRIPTION The XC9235/XC9236/XC9237 series is a group of synchronous-rectification type DC/DC converters with a built-in 0.42Ω

BLX91CB

Abstract: IEC134 transistor 3609 amperex vc 100
Contextual Info: N AMER P H I L I P S / D ISC RETE ObE_ I> Ü 1^53 ^31 0 01404 t, b • 0800130 AMPEREX, HICKSVILLE _ 86D 01808 D 'T ~ 3 3 - ô $ II BLX91CB SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N silicon planar epitaxial transistor primarily designed fo r use in fast-switching wide-band video

bu548

Abstract: BU548A BUS48 erni relay erni relay B1 5.5 relay ERNI transistor 2sc 548 BUS48A CIT Relay relay ERNI ad 5.2
Contextual Info: 17-JUN-1999 16:21 FROM TO MAGNATEC 01132794449 P.02/08 M agnatec 2 0 0 - 5 2 . ¿y K \ MAG N i Magna Park. Coventry Road, Lutterworth Leicestershire LE17 4JB, England Sales telephone: 01455 554711 Admin telephone: 01455 552505 Fax: 01455 558843 CwrtKarc Ho i'j JiiiS

TRansistor 648

Abstract: power factor PIC circuit transistor bd646 BD646 lco8a LCO 8A BD650 LE17 BD645 BD649
Contextual Info: MAGNA Magna Park, Coventry Road, Lutterworth Leicestershire LE17 4JB, England Sales telephone: 01455 554711 Adm in telephone: 01455 552505 Fax: 01455 558843 FS » 2 3 » BD646; 648 BD650; 652 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m o n o lith ic D arlin gton c irc u it fo r audio o u tp u t stages and general

749 MOSFET TRANSISTOR motorola

Abstract: 749PC GE DC 300 ADJUSTABLE SPEED DRIVE 4151d MAX749CA MAX749EA zetex 749 MAX749CPA
Contextual Info: 19-0143; Rev 0; 5/93 V M y JX IV M D igitally A djustable LCD Bias Supply _ G eneral D escription .F eatures The MAX749 generates negative LCD-bias contrast voltages from 2V to 6V inputs. Full-scale output voltage can be scaled to -100V or greater, and is d ig ita lly

MAX749CPA

Contextual Info: 19-0143: Rev 1:2/9 5 > i/ iy j x i> k i D i g i t a l l y A d j u s t a b l e LCD Bi as S u p p l y _G e n e r a l D e s c r i p t i o n ♦ +2.0V to +6.0V Input Voltage Range A unique current-lim ited control schem e reduces supply current and maximizes efficiency, while a high switching

2N2657

Abstract: 2N2658 PG1150 PG1151 PG1152 PG1153 PG1154 PG1155 PG1156 Sprague Electric
Contextual Info: 0043592 A P F E L E C T R O N IC S .2 A .0149,., D IN C - * :A P I ELECTRONICS INC 20^ DE 1 0 0 4 3 S T 2 00D014Ì 4 'J1-' INTERIM BULLETIN: Subject to Revision Without Notice -, . - 1 •* r- -*í - -.-APRIL 15,1971 POWER TRANSISTOR ^ ENGINEERING BULLETIN

MCT2E equivalent

Abstract: c826 NPN c823 c815 CS15 TRANSISTOR c826 npn D9B diode C818 transistor c815 C2079
Contextual Info: ~ûfl GENL INSTR t OPTOELEK DE 1 30=10150 □ □05'ibl l» T ~ PT"HI'B3 « G E N E R A I! iWRlSMEISTR MCT2E DESCRIPTION PACKAGE DIMENSIONS db f t f t I 6.86 .270 ^ 6.35 (.250) 0.36 (.014) I 0.20 (.008) 7.62 (.300) REF 8.38 (.330) 2Æ4(.100)TYP-*j 15° MAX

FMBT3946DW

Abstract: DS-231156 npn-pnp dual
Contextual Info: Dual NPN +PNP Epitaxial Planar Transistor Formosa MS FMBT3946DW List List. 1 Package outline. 2

transistor IR 840

Abstract: TRANSISTOR RF -PT 4555 BLV193 Philips CT6 power transistor UHF POWER TRANSISTOR MRA553 MRA554
Contextual Info: Philips Semiconductors 711005b 0Qb312? 014 IPHIN Product specification BLV193 UHF power transistor PHILIPS INTERN ATI ON AL FEATURES • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. DESCRIPTION

CPM2C MAD11 OMRON Operation Manual

Abstract: CPM1A-MAD11 cs1w-cn226 MAD11 omron CPM2c-32EDT CPM1-CIF01 power supply circuit diagram omron sysmac cpm2a Omron cpm2a SUPPORT SOFTWARE CPM2A-60CDR-A OMRON CPM2A
Contextual Info: CPM2A Specifications CPM2A General Specifications Item Supply pp y voltage g Operating p g voltage g range Power consumption p Inrush current External power supply AC power supplies only AC power DC power AC power DC power AC power DC power AC power DC power

MRC014

Abstract: MRC012 MRC020 BFS505 MRC015
Contextual Info: Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFS505 PINNING FEATURES • Low curren t consum ption PIN DESCRIPTION • High pow er gain Code: NO • Low noise figure 1 base • High transition frequency 2 em itter • Gold m etallization ensures

749 MOSFET TRANSISTOR motorola

Abstract: MAX749CPA
Contextual Info: 19-0143; Rev 1; 2/95 D igitally Adjustable LCD Bias Supply A unique current-limited control scheme reduces supply current and maximizes efficiency, while a high switching frequency up to 500kHz minimizes the size of external components. Quiescent current is only 60|jA max and is

Transistor Equivalent list

Contextual Info: Formosa MS Dual NPN Epitaxial Planar Transistor FMBT2222ADW1 & FMBT2222ADW2 List List. 1 Package outline. 2

SOT-363

Contextual Info: Dual NPN Transistor Formosa MS FMBT3904DW1 & FMBT3904DW2 List List. 1 Package outline. 2

PLC programming temperature control omron

Abstract: OMRON CPM2A
Contextual Info: Y201-EN2-03.book Seite 86 Donnerstag, 30. März 2006 1:52 13 Compact PLC series CPM2C A versatile controller for up to 192 I/O points in an ultra-compact package SYSMAC CPM2C An extensive range of models assures efficient machine control in an ultracompact package. CPU Units DC

2N2657

Abstract: 2N2658 HA 1156 R PG1150 PG1151 PG1152 PG1153 PG1154 PG1155 PG1156
Contextual Info: 0043592 A P F E L E CT RON IC S 2ÖA TNC' ÿ f ; A P I ELECTRONICS INC "e g 0 ^ 0 0 4 3 5 ^ 2 D D D Q 1 4 Ì >4 .0149 ., I IN TE R IM B U LLE TIN : - S u b j e c t to R e v is io n - ; 1 - W it h o u t N o tic e - A P R IL 15, 1971 • ' \ • POWER TRANSISTOR '