C830 Search Results

B59871-C135-A70

Abstract: c872 c880 siemens siemens c890 c880 C875 B59841C135A70 B59871C135A70 c871 B59811-C135-A70
Contextual Info: Maßbild Typ Outline drawing Type Nennstrom Rated current mA NennMaße wtderstand Rated Dimensions resistance ^m ax ^25 mm mm Q Bestell-Nr. Ordering code 0d mm 265 V, 7"Ref = 80 °C B.Omax nr <f>d C810 C830 C840 C850 C860 C870 C880 C890 350 250 170 110 90

Contextual Info: Agilent HSMW-C830 High Brightness White LED Light Source Data Sheet Description This High Brightness White LED Light Source is a high performance device, which can handle high thermal and drive current, by efficiently dissipating the heat out of the package to the customer

LM 015

Abstract: rs tube C83051 C83051E pmt amplifier circuit
Contextual Info: Return To Product Page C83051C, C83051D, C83051E Photomultipliers 25.4 mm 1” Dia. Ruggedized 10Stage End Window PMTs With High Temp. Na2KSb Bialkali Photocathode, Sapphire Faceplate, and Metal-Ceramic Envelope for Geophysical Exploration • Designed for High Temperature Operations

Contextual Info: epitex LED CHIP C830-40P Opto-Device & Custom LED SPECIFICATION OF LED CHIP C830-40P [INFRARED] 1 Commodity Type and Physical Characteristics. 1. Material GaAlAs/GaAlAs DDH) 2. Electrode Top Side N (cathode) side : Au Alloy & Pad Bottom Side P (anode) side

PTC C851

Abstract: siemens PTC C860 PTC C831 siemens PTC C830 PTC C841 siemens ptc c851 PTC c840 siemens PTC C861 st c830 ptc c880
Contextual Info: Maßblld Typ Outline drawing Type Nenn­ st rom Rated current mA — 5,0 b :5,0b. PTIQX NennMaße widerstand Rated Dimensions resistance f l25 I ^ma* Q mm 1mm ^max = 265 V, r Re1 = 80°C C810 350 2.6 3.7 C830 250 6.0 C840 170 C850 110 10 C860 90 15 25 C870

g688

Abstract: ortec preamplifier LM 015 C83060C
Contextual Info: Return To Product Page C83060C, C83060D, C83060E Photomultipliers 32 mm 1 1/4” Dia. Ruggedized, 10-Stage End Window PMT With High Temp. Na2KSb Bialkali Photocathode, Sapphire Faceplate, and MetalCeramic Envelope - for Geophysical Exploration • Designed for High Temperature Operations (Repeated Cycling)

HSMW-C830

Contextual Info: HSMW-C830 High Brightness White LED Light Source Data Sheet Description Features This High Brightness White LED Light Source is a high performance device, which can handle high thermal and drive current, by efficiently dissipating the heat out of the package to the customer motherboard. With the slim

p8245

Abstract: S3P830A 74NC11 P830-A FM24653 replacement BUZ 36 ISO-14001 S3C830A SASM88 AS50D-A
Contextual Info: 21-S3-C830A/P830A-032002 USER'S MANUAL C830A/P830A 8-Bit CMOS Microcontroller Revision 1 NOTIFICATION OF REVISIONS ORIGINATOR: Samsung Electronics, SOC Development Group, Ki-Heung, South Korea PRODUCT NAME: C830A/P830A Microcontroller DOCUMENT NAME: C830A/P830A User's Manual, Revision 1

HSMW-C830

Abstract: White High Flux LED
Contextual Info: Agilent HSMW-C830 High Brightness White LED Light Source Data Sheet Features • Smooth, Consistent Spatial Radiation Pattern • 60° View Angle • Slim Package formation • 2.2 L x 7.0W X 1.7H mm Package Dimension • Good Intensity Output Description

Contextual Info: Agilent HSMW-C830 High Brightness White LED Light Source Data Sheet Features • Smooth, Consistent Spatial Radiation Pattern • 60° View Angle • Slim Package formation • 2.2 L x 7.0W X 1.7H mm Package Dimension • Good Intensity Output Description

Corning 7056

Abstract: Corning 5-58 bialkali refraction bialkali AJ2263A Photocathode
Contextual Info: Return To Product Page C83065C, C83065D, C83065E Photomultipliers 25.4 mm 1-inch Diameter Ruggedized 10-Stage End-Window PMTs With High Temperature Na2KSb Bialkali Photocathodes - for Geophysical Exploration • • • • • • Designed for High Temperature Applications (Repeated Cycling)

INS8243

Abstract: nsc810 NSC830 as 1 101m p10 INS8048 NS80CX35 NS80CX35N NS80CX35NI NS80CX48 CONTENTS-11
Contextual Info: NS80CX48/80CX35 F^CMOS Microcomputer/ Microprocessor Family Features — NS80CX48 General Description The N S 8 0 C X 4 8 is a p a r a lle l 8 - b it m ic r o c o m p u t e r c o n t a in e d in a s ta n d a r d 4 0 - p in , d u a l- in - lin e p a c k a g e . T h e

CX93021

Abstract: CX-9Z-C00234 USG-201693 CX93021-21Z csm92-sp cx93021-2x conexant phone line reference CX-9Z-C00217 CSM92 REM-201692
Contextual Info: CX93021-2x CSM92-SP V.92 Controllered Serial Modem with Speakerphone with CX20548 SmartDAA and CX20452 Codec Data Sheet DSH-201722F July 17, 2012 CX93021-2x CSM92-SP V.92 Controllered Serial Modem with Speakerphone Data Sheet Revision Record Revision A

CX93011-21Z

Abstract: CX93011-2x USG-201664 cx93011 CSM92 cx93011-21z c828 TRANSISTOR equivalent cx20548 C828 transistor pin diagram transistor c828 pins conexant cx93011
Contextual Info: CX93011-2x CSMxx V.92/V.34/V.32bis Controller Serial Modem with CX20548 SmartDAA Data Sheet DSH-201689G July 2012 Revision History Revision Date Description A June 11, 2008 Initial release B July 29, 2008 Revision B release C July 31, 2008 Revision C release

PTC c840

Abstract: PTC C880 ptc c810 EPCOS 230 06 0 PTC C850 c840 c874 c880 ptc ptc c874 ptc thermistor c870
Contextual Info: PTC thermistors for overcurrent protection Leaded disks, coated, 230 V Series/Type: B598* Date: October 2008 EPCOS AG 2008. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior express consent is prohibited.

Contextual Info: FU JITSU UHB SERIES 1.5p CMOS GATE ARRAYS MB62XXXX MB60XXXX Septem ber 1988 Edition 1.1 DESCRIPTION The UHB series o f 1 .5-m icron CMOS gate arrays Is a highly Integrated low -pow er, ultra high-speed product fam ily th a t derives its enhanced perform ance and increased user flexibility fro m the use of a system -proven, dual-colum n gate s tru ctu re and 2-layer

27mhz remote control transmitter circuit

Abstract: 27mhz remote control transmitter schematics 506K LLC resonant full bridge schematic LEONE RELAY sc5 27mhz remote car Taiwan Semiconductor 6A BEL 7905 c1 TRANSISTOR FS 2025 diode Marking codes u1d ON
Contextual Info: AN93 S i 2 4 9 3 / S i 2 4 5 7 / S i 2 4 3 4 / S i 2 4 1 5 / S i 2 4 0 4 M o d e m D e s i g n e r ’s G u i d e Introduction double-sided and single-sided layouts with options for through-hole isolation components. Additionally, evaluation boards, useful for evaluating the modem

ecg semiconductors master replacement guide

Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
Contextual Info: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei

Corning 7056

Abstract: BURLE TECHNOLOGIES Hamamatsu photomultiplier R1535 Corning 70-56 Hamamatsu Photomultiplier Socket 12 Pin Burle Industries Hamamatsu photomultiplier hamamatsu PMT 12-PIN S-8306
Contextual Info: Return To Product Page S83062E Photomultiplier 25mm 1 in Diameter End-window, High Quantum Efficiency (QE) PMT - 32% typical QE at 370nm - 107 typical gain at 1300V - 10-stage linearly focused cage Bialkali photocathode The BURLE S83062E is a 25mm (1in) diameter endwindow PMT with a 10-stage linearly focused alkaliantimonide dynode structure, bialkali photocathode,

JEDEC B12-43

Abstract: Corning 7056 photomultiplier JEDEC B12-43 photomultiplier toshiba B12-43 S83083E
Contextual Info: Return To Product Page S83063E Photomultiplier End-Window PMT 300 - 880 nm Spectral Response Very High Responsivity in the Near-IR Typically 4% Quantum Efficiency 700 nm High Gain Dynodes Low Dark Current BURLE type S83083E is a 28-mm l-1/8” diameter stage linear focused dynode design, a multialkali

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

c828 transistor

Abstract: c828 transistor datasheet free C828 transistor c828 c828 C834 transistor tr c828 STEP C839 tr c828 c829 dual C824
Contextual Info: STw5098 Dual low-power asynchronous stereo audio Codec with integrated power amplifiers Features • Dual 20 bit audio resolution, 8 kHz to 96 kHz independent rate ADC and DAC ■ Dual I2S or PCM digital interfaces for dual master ■ Sustain complex voice and audio flow with or

sk 8050 rf

Abstract: smd diode 815b C8050 schottky C475 DIODE 2C101 m15 fah 001 8 24VDc R5C592 LTN154X1-L02 W83L950 BGA144F
Contextual Info: SERVICE MANUAL FOR 8050 BY: Grass.Ren Repair Technology Research Department /EDVD Feb.2004 8050 N/B Maintenance Contents 1. Hardware Engineering Specification …………………………………………………………………. 1.1 Introduce ……………………………………………………………………………………………….

sis 962l

Abstract: 301LV 93lc468 SIS 740 sc728 RT8110 sis962l CMI9739A lc949 CMI9739
Contextual Info: 5 4 3 2 1 Power Now Clock Gen. PAGE 5 AMD Mobile Duron CPU RTC,VCC3,VCC5 PAGE 10 Sideband Bus SYSTEM POWER PAGE 22 PAGE 38 Thermal D D PAGE 2,3,4 Clock Buffer CHARGER &SELECTOR PAGE 11 PAGE 34 S2K Bus CRT North Bridge PAGE 15 BAT.LOW&OVER.T Memory Bus SiS 740