TRANSISTOR CB 753 U Search Results

2n706

Abstract: 89012 2N706A 2N753 6CB6 2n 753 2n 706 Thomson-CSF bb
Contextual Info: 2N 706 A 2N753 NPN S ILIC O N TR A N S IS TO R S , E P IT A X IA L TRANSISTORS NPN SILIC IU M , E P IT A X IA U X - Small signal amplification A m plifica tio n petits signaux - Low current fast switching Commutation rapide faible courant Maximum power dissipation

transistor cb 753 u

Abstract: lf2a
Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT753 ISSUE 1 - FEB 94_ FEATU RES * 100 Volt V CE0 * 2 A m p c o n tin u o u s current * P,ot= 1 W att A P P L IC A T IO N S * Lam p, relay o r s o le n o id d riv e rs * A u d io circuits

transistor ESM 30

Abstract: transistor ESM transistor h21e 752 transistor IC 282 ft950
Contextual Info: ESM 282 NPN SILICON TRANSISTOR, PLANAR TRIPLE DIFFUSED TRANSISTOR NPN S ILIC IU M , PLAN A R TRIPLE DIFFUSE PR ELIM INARY DATA NOTICE P R E LIM IN A IR E The ESM 282 is an high frequency X-55 plastic package transistor, intended for mixer and os­ cillator stage in T V VH F tuners.

Contextual Info: I 1 N AUER PHILIPS/DISCRETE bTE D bb53^31 0027741 141 APX B fX 3 U SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a TO-39 metal envelope intended for switching applications. QUICK REFERENCE DATA Collector-base voltage open emitter Collector-emitter voltage (open base)

Contextual Info: Philips Semiconductors bbS3R31 0031704 72T M A P X NPN 1 GHz video transistors £ Product specification BFQ232; BFQ232A N AflER PHILIPS/DISCRETE DESCRIPTION b'JE D PINNING NPN silicon epitaxial transistor in a SOT32 TO-126 package, with emitter-ballasting resistors and a

Contextual Info: N AUER PHILIPS/DISCRETE b5E bb53531 Q037flSb 553 • APX D BSS50 to 52 N-P-N DARLINGTON TRANSISTORS Silicon planar transistors in TO-39 metal envelopes, intended for industrial switching applications e.g. print hammer, solenoid, relay and lamp driving. P-N-P complements are the BSS60, BSS61 and BSS62.

pnp transistor 1000v

Abstract: transistor buv 90 bux diode darlington NPN 1000V transistor pnp transistor 600V transistor ESM 30 buv PNP transistor BU 104 NPN Transistor VCEO 1000V transistor BUX 48
Contextual Info: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \ V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125 V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BU W 4ff 30 A BU W 49 20 A BUX 69 IS A

2SB541

Abstract: 2SD388 C14A 2SD388 A 2sd388/2sb541 251C audio amplifier 50w 50v
Contextual Info: 2SD 388/2SB541 2SD388/2SB541 npn/ pnp E.nm * y =• > h 7 v * * * NPN/PNP SILICON TRIPLE DIFFUSED MESA TRANSISTOR ffl/A u d io Frequency Power Amplifier WttmZPACKAGE DIMENSIONS Unit:mm ft St/FEA T U R E • 40~ 50W H i-Fi 7 v ^2 y t v 9 ') '<V — \ 7 v v 7 9 7;

Contextual Info: BFR750L3RH NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range 3 1 of wireless applications up to 10 GHz 2 • Ideal for WLAN and all 5-6 GHz applications • High OIP 3 and P-1dB for driver stages

3904

Contextual Info: SIEMENS NPN Silicon Switching Transistor • High DC current gain-: 0.1 mA to 100 mA • Low collector-emitter saturation voltage SMBT 3904 • Complementary type: SMBT 3906 PNP Type Marking SMBT 3904 s1A Ordering Code (tape and reel) »Q68000-A4416 P in t tonfigu ration

PHILIPS BDX65

Abstract: transistors ai 757 BDX65 PHILIPS BDX64 BDX64* darlington BDX65B 1981-R BDX65C darlington transistor C 3300 BDX64A
Contextual Info: If N AMER P H I L I P S / D I S C R E T E ^ 53^31 D a m ? ? ESE D 1 • BDX65; 65A BDX65B; 65C T - 3 3 - 2 ? SILICON DARLINGTON POW ER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. P-N-P complements are BDX64, BDX64A,

PHILIPS BDX65

Abstract: BDX65 PHILIPS BDX64
Contextual Info: N AMER PHILIPS/DISCRETE b b S a ^ l 0011=177 1 • BDX65; 65A BDX65B; 65C ESE D T - 3 3 - 2 7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. P-N-P complements are BDX64, BDX64A,

transistor TA78

Abstract: TA57 ta76 ic TA76 TA54/TA57/TA60/TA61/TA64/TA76/TA78 ta64
Contextual Info: h -7 > y 7s £ /T ra n sisto rs TA54/T A57/T A60/T A61 /T A64/T A76/T A78 T A 5 4 /T A 5 7 /T A 6 0 /T A 6 1 T A 6 4 /T A 7 6 /T A 78 1 f c f T i i - ' f i ' - i - M y ' =i > Epitaxial Planar Silicon Transistor Arrays • W F ^ T liill/ D im e n s io n s U n it: mm)

BLV21

Abstract: RF POWER TRANSISTOR NPN vhf
Contextual Info: N A ME R PHILIPS/DISCRETE t 'îE j> m □ □ 2 ñ ci m IAPX t t d BLV21 I V.H.F. POWER TRANSISTOR N-P-N silicon planar ep itaxial transistor intended fo r use in class-A, B and C operated h .f. and v .h .f. transm itters w ith a nom inal supply voltage o f 2 8 V . T h e transistor is resistance stabilized and is guaran­

Contextual Info: N AUER PHILIPS/DISCRETE b'lE D • bbSS1^ ! DQETBbb 77E « A P X BLW76 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­

Contextual Info: BFR750L3RH NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor • Provides outstanding performance for a wide range of wireless applications up to 10 GHz 3 1 2 • Ideal for WLAN and all 5-6 GHz applications • High OIP3 and P-1dB for driver stages

BFG134

Abstract: bt 1690 transistor transistor bt 1630 resistor 2322 194 philips bt 1690 philips 2222 372 DD313 752 J 1600 V CAPACITOR LC 3524 2222 379
Contextual Info: P hilip ^em icon d u cto r^^ ^ b t iS B 'ìB l 0031315 16D • A P X ^^P ro du c^p eo lficatio n NPN 7 GHz wideband transistor BFG134 N AHER PHILIPS/DISCRETE b^E D PINNING DESCRIPTION NPN planar epitaxial transistor in a 4-tead double-emitter plastic SOT103 envelope, intended for

30df

Abstract: AI mm sot 553 TIP29BF TIP29CF TIP29DF TIP29F TIP30AF TIP30BF TIP30CF TIP30DF
Contextual Info: TIP30F TIP30AF; TIP30BF ^ T1P30CF; TIP30DF SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a S O T 1 8 6 envelope with an electrically insulated mounting base, for use in audio output stages and for general purpose amplifier and high-speed switching applications.

30BF

Abstract: TIP30DF TIP3 TIP29AF TIP29BF TIP29CF TIP29DF TIP29F TIP30AF TIP30BF
Contextual Info: TIP30F TIP30AF; TIP30BF TIP30CF: TIP30DF PHILIPS INTERNATIONAL Sb E D I 7110ä2b 00M34bb 700 « P H I N SILICON EPITAXIAL POWER TRANSISTORS T - & - IT PNP silicon power transistor in a S O T 186 envelope w ith an electrically insulated mounting base, for use in audio output stages and for general purpose am plifier and high-speed switching applications.

stk4144

Abstract: surround amplifier STK4100 transistor 6j STK4199MK2 STK4205 STK4159 STK444 J-120 MG-200
Contextual Info: O rd e rin g num ber : EN421ÔA Tbick-film Hybrid Integrated Circuit HIC STK4199MK2 No. 4218A SA\YO Audio Power Amplifier (THD = 0.3%) 25 W + 50 W + 25 W I /> " Ä Overview Package Dimerçéior# " Recent audio-visual television sets generate more impressive images by making the images higher in

Contextual Info: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES DESCRIPTION • LOW COST T he N E 9 44 series o f NPN silicon epitaxial b ipo lar transisto rs is intended fo r use in ge ne ral purpose U H F o scilla to r and m ixer applicatio ns. It is su ita b le fo r au tom otive keyless entry

IS111

Contextual Info: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION • LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applications. It is suitable for automotive keyless entry

X72A

Abstract: x72a SOT23-6
Contextual Info: Product specification P h ilip s Sem iconductors CNX71A/CNX72A H igh-voltage optocouplers FEATURES • High current transfer ratio and a low saturation voltage, making the devices suitable for use with TTL integrated circuits • High degree of A C and D C

2SD1966

Abstract: 2SD1255M 2SB maintenance IMB6 2SC2808
Contextual Info: h -7 > y 7, $ /Transistors h z 7 > y Z $ $ H n h —W h 7 > y ^ ^ i p n — f t ü / T r a n s is t o r s Summary • h 7 v 3. $ /Transistors 2SA/2SB/2SC/2SC/2SD Type V ceo (V ) fT(M H z) Cob(pF) hFE Package Page 6.5 82-390 FTR 75 Icm - 1 .5 A 300 200 5.5