TRANSISTOR C90 Search Results

TRANSISTOR C90 Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR C90 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
vq 123 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Information Insulated Gate Bipolar Transistor MGW 12N120E N-Channel Enhancement-Mode Silicon Gate This Insulated Sate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high	OCR Scan	O-247 125CC MGW12N120E vq 123	PDF
Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor	Original	LM96163 LM96163 2N3904,	PDF
Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor	Original	LM96163 2N3904,	PDF
2N3904 Abstract: LM96163 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6 Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor	Original	LM96163 LM96163 2N3904, 2N3904 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6	PDF
gp20n60 Abstract: transistor fall time MJ10 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP20N60U Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high	OCR Scan	O-220 MGP20N60U CASE221A-09 O-22DAB GP20N60U gp20n60 transistor fall time MJ10	PDF
RTU620 Contextual Info: LM96163 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Literature Number: SNAS433C LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm® BJT Transistor Beta	Original	LM96163 LM96163 SNAS433C RTU620	PDF
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP4N60E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high	OCR Scan	MGP4N60E	PDF
GY25N120 Abstract: n120 30 igbt Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGY25N120 Insulated Gate Bipolar Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high	OCR Scan	MGY25 O-264 GY25N120 0E-05 0E-04 0E-03 0E-02 0E-01 GY25N120 n120 30 igbt	PDF
zener DIODE C25 Abstract: motorola 4102 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet MGP2N60D In su lated G ate B ipolar Transistor N-Channei Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT contains a built-in free wheeling diode and a gate protection zener. Fast switching	OCR Scan	T0220 MGP2N60D 21A-09 O-220AB zener DIODE C25 motorola 4102	PDF
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGP14N60E This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability, its new 600 V IGBT technology is	OCR Scan	TCJ-220 MGP14NG0E	PDF
150 nJ Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGW12N120 Insulated G ate Bipolar Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high	OCR Scan	O-247 MGW12N120 150 nJ	PDF
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGW 2 0 N 120 Insulated Gate Bipolar Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high	OCR Scan	O-247 20N120 0E-02 0E-01 0E-05 0E-04	PDF
Contextual Info: MOTOROLA Order this document by MGP15N60U/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MGP15N60U Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high	OCR Scan	MGP15N60U/D MGP15N60U O-220 21A-09	PDF
Contextual Info: MOTOROLA Order this document by MGP11N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GP11N6 0 E Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high	OCR Scan	MGP11N60E/D GP11N6 21A-06 O-220AB	PDF

N60E Contextual Info: MOTOROLA Order this document by MGP21 N60E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor MGP21N60E N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high	OCR Scan	MGP21 N60E/D MGP21N60ED N60E	PDF
Contextual Info: MOTOROLA Order this document by MGP20N60U/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MGP20N60U Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high	OCR Scan	MGP20N60U/D MGP20N60U O-220	PDF
Contextual Info: MOTOROLA Order this document by MGP15N60U/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GP15N60U Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high	OCR Scan	MGP15N60U/D GP15N60U O-220	PDF
diode lt 238 Abstract: 21N60ED Contextual Info: MOTOROLA Order this document by MGW21 N60ED/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M G W 21N 60ED Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT is co-packaged with a soft recovery u ltra -fa s t rectifier and uses an advanced	OCR Scan	MGW21 N60ED/D MGW21N60ED/D diode lt 238 21N60ED	PDF
BC847N3 Contextual Info: CYStech Electronics Corp. Spec. No. : C907N3 Issued Date : 2003.07.31 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BC847N3 Description • The BC847N3 is designed for general purpose switching and amplification applications.	Original	C907N3 BC847N3 BC847N3 BC857N3. 100mA OT-23 UL94V-0	PDF
bc817n3 Abstract: 8F sot23 BC807N3 Contextual Info: CYStech Electronics Corp. Spec. No. : C906N3 Issued Date : 2003.05.12 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BC817N3 Description • The BC817N3 is designed for general purpose switching and amplification applications.	Original	C906N3 BC817N3 BC817N3 BC807N3. 500mA) OT-23 UL94V-0 8F sot23 BC807N3	PDF
BC807N3 Abstract: 9F marking sot23 pnp marking 9f C905N Contextual Info: CYStech Electronics Corp. Spec. No. : C905N3 Issued Date : 2003.07.29 Revised Date : 2005.05.10 Page No. : 1/4 General Purpose PNP Epitaxial Planar Transistor BC807N3 Description • The BC807N3 is designed for general purpose switching and amplification applications. It is housed in	Original	C905N3 BC807N3 BC807N3 OT-23/SC-59 BC817N3 OT-23 UL94V-0 9F marking sot23 pnp marking 9f C905N	PDF
ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643	PDF
Contextual Info: LM96163 www.ti.com SNAS433C – JUNE 2008 – REVISED OCTOBER 2011 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Check for Samples: LM96163 FEATURES 1 • 2 • • •	Original	LM96163 SNAS433C LM96163 2N3904 12-step	PDF
6c_ transistor Abstract: transistor 6c x 6C transistor transistor 6c Contextual Info: ^/outran IPKOOOilgTr Ä?ÄIL LOW TO MEDIUM VOLTAGE, FAST SWITCHING CHIP NUMBER Devices. Inc PIMP EPITAXIAL PLANAR POWER TRANSISTOR* * CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available	OCR Scan	203mm) 009Mx 45MHz 45MHz SDT05573, SDT05673 200mA, 6c_ transistor transistor 6c x 6C transistor transistor 6c	PDF

TRANSISTOR C90 Search Results

TRANSISTOR C90 Result Highlights (5)

TRANSISTOR C90 Datasheets Context Search

vq 123

2N3904

gp20n60

RTU620

GY25N120

zener DIODE C25

150 nJ

N60E

diode lt 238

BC847N3

bc817n3

BC807N3

ksd 302 250v, 10a

6c_ transistor