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    GP20N60 Search Results

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    Infineon Technologies AG IGP20N60H3XKSA1

    IGBT TRENCH FS 600V 40A TO220-3
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    DigiKey IGP20N60H3XKSA1 Tube 269 1
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    Avnet Americas IGP20N60H3XKSA1 Tube 320 19 Weeks 50
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    Newark IGP20N60H3XKSA1 Bulk 59 1
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    Rochester Electronics IGP20N60H3XKSA1 330 1
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    TME IGP20N60H3XKSA1 242 1
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    Chip One Stop IGP20N60H3XKSA1 Tube 500 0 Weeks, 1 Days 1
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    IXYS Corporation IXGP20N60B

    IGBT 600V 40A TO-220-3
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    onsemi FGP20N60UFDTU

    IGBT FIELD STOP 600V 40A TO-220
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    Rochester Electronics FGP20N60UFDTU 126,650 1
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    Chip Stock FGP20N60UFDTU 15,500
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    Rochester Electronics LLC SGP20N60XKSA1

    IGBT NPT 600V 40A TO220-3
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    DigiKey SGP20N60XKSA1 Bulk 180
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    Infineon Technologies AG SGP20N60XKSA1

    IGBT NPT 600V 40A TO220-3
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    Rochester Electronics SGP20N60XKSA1 5,130 1
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    Chip Stock SGP20N60XKSA1 160
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    GP20N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: MOTOROLA Order this document by GP20N60U/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet GP20N60U Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high


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    MGP20N60U/D MGP20N60U O-220 PDF

    gp20n60

    Abstract: transistor fall time MJ10
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet GP20N60U Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


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    O-220 MGP20N60U CASE221A-09 O-22DAB GP20N60U gp20n60 transistor fall time MJ10 PDF