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    Infineon Technologies AG IGP20N60H3XKSA1

    IGBT, 40 A, 1.95 V, 170 W, 600 V, TO-220, 3 Pins - Rail/Tube (Alt: IGP20N60H3XKSA1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas IGP20N60H3XKSA1 Tube 20 1,000
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    Newark IGP20N60H3XKSA1 Bulk 522 1
    • 1 $1.99
    • 10 $1.76
    • 100 $1.49
    • 1000 $1.28
    • 10000 $1.09
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    Rochester Electronics IGP20N60H3XKSA1 1,567 1
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    • 100 $0.82
    • 1000 $0.68
    • 10000 $0.60
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    Vyrian IGP20N60H3XKSA1 10,626
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    onsemi FGP20N60UFDTU

    IGBT, 600V, 20A, Field Stop
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    Rochester Electronics FGP20N60UFDTU 123,750 1
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    • 100 $1.24
    • 1000 $1.11
    • 10000 $1.05
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    Infineon Technologies AG SGP20N60HSXKSA1

    Insulated Gate Bipolar Transistor, 36A I(C), 600V V(BR)CES, N-Channel, TO-220AB
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    Rochester Electronics SGP20N60HSXKSA1 4,496 1
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    • 100 $1.52
    • 1000 $1.36
    • 10000 $1.28
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    Vyrian SGP20N60HSXKSA1 13,193
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    Infineon Technologies AG SGP20N60XKSA1

    Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics SGP20N60XKSA1 5,130 1
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    • 100 $1.61
    • 1000 $1.34
    • 10000 $1.19
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    Fairchild Semiconductor Corporation FGP20N60UFDTU

    IGBT 600V 40A 165W TO220
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    Win Source Electronics FGP20N60UFDTU 12,000
    • 1 -
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    • 100 $1.11
    • 1000 $0.90
    • 10000 $0.90
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    GP20N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: MOTOROLA Order this document by GP20N60U/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet GP20N60U Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high


    OCR Scan     		MGP20N60U/D MGP20N60U O-220 PDF

    gp20n60

    Abstract: transistor fall time MJ10
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet GP20N60U Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high


    OCR Scan     		O-220 MGP20N60U CASE221A-09 O-22DAB GP20N60U gp20n60 transistor fall time MJ10 PDF