GP20N60 Search Results
GP20N60 Price and Stock
Infineon Technologies AG IGP20N60H3XKSA1IGBT TRENCH FS 600V 40A TO220-3 |
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IGP20N60H3XKSA1 | Tube | 269 | 1 |
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IGP20N60H3XKSA1 | Tube | 320 | 19 Weeks | 50 |
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IGP20N60H3XKSA1 | Bulk | 59 | 1 |
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IGP20N60H3XKSA1 | 330 | 1 |
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IGP20N60H3XKSA1 | 242 | 1 |
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IGP20N60H3XKSA1 | Tube | 500 | 0 Weeks, 1 Days | 1 |
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IGP20N60H3XKSA1 | 20 Weeks | 500 |
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IXYS Corporation IXGP20N60BIGBT 600V 40A TO-220-3 |
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IXGP20N60B | Tube |
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onsemi FGP20N60UFDTUIGBT FIELD STOP 600V 40A TO-220 |
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FGP20N60UFDTU | Tube |
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FGP20N60UFDTU | 126,650 | 1 |
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FGP20N60UFDTU | 15,500 |
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Rochester Electronics LLC SGP20N60XKSA1IGBT NPT 600V 40A TO220-3 |
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SGP20N60XKSA1 | Bulk | 180 |
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Infineon Technologies AG SGP20N60XKSA1IGBT NPT 600V 40A TO220-3 |
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SGP20N60XKSA1 | Tube |
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SGP20N60XKSA1 | 5,130 | 1 |
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SGP20N60XKSA1 | 160 |
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GP20N60 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: MOTOROLA Order this document by GP20N60U/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet GP20N60U Insulated G ate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced term ination schem e to provide an enhanced and reliable high |
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MGP20N60U/D MGP20N60U O-220 | |
gp20n60
Abstract: transistor fall time MJ10
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O-220 MGP20N60U CASE221A-09 O-22DAB GP20N60U gp20n60 transistor fall time MJ10 |