TRANSISTOR C113 Search Results
TRANSISTOR C113 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| BLA1011-300 |
|
BLA1011-300 - 300W LDMOS Avionics Power Transistor |
|
||
| 54F151LM/B |
|
54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
|
||
| ICL7667MJA |
|
ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
|
||
| 93L422ADM/B |
|
93L422A - 256 x 4 TTL SRAM |
|
||
| 54F151/BEA |
|
54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) |
|
TRANSISTOR C113 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SWITCHING TRANSISTOR C114
Abstract: C114 E S W transistor C114 transistor for C114 transistor IRGPC30FD2 C-111 C-113 C-114 C-115 ic c113 61
|
Original |
IRGPC30FD2 10kHz) O-247AC C-116 SWITCHING TRANSISTOR C114 C114 E S W transistor C114 transistor for C114 transistor IRGPC30FD2 C-111 C-113 C-114 C-115 ic c113 61 | |
|
Contextual Info: BSP 171P Inf ineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Features Product Summary • P Channel Drain source voltage Vbs -60 V • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current wDS on 0.3 |
OCR Scan |
BSP171P P-SOT223-4-1 Q67041-S4019 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T | |
|
Contextual Info: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular ampliiers covering the 2110 to 2170 MHz |
Original |
PTFB213004F PTFB213004F 300-watt H-37275-6/2 | |
|
Contextual Info: SPD 07N20 In fin e o n technologies Preliminary Data SIPMOS Power Transistor Product Summary Features Drain-Source on-state resistance • Enhancement mode Continuous drain current • Avalanche rated V 200 Drain source voltage • N channel ^ D S o n |
OCR Scan |
07N20 67040-S 112-A S35bQ5 SQT-89 B535bQ5 D13377Ã B235bG5 | |
3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
|
OCR Scan |
FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159 | |
smd transistor 43t
Abstract: marking code ya SMD Transistor MARKING SMD 43t SMD MARKING CODE 43t smd 43t transistor BUZ102S smd code book transistor 43t SMD E3045 G1333
|
OCR Scan |
BUZ102S P-T0220-3-1 Q67040-S4011-A2 E3045A P-T0263-3-2 Q67040-S4011-A6 E3045 smd transistor 43t marking code ya SMD Transistor MARKING SMD 43t SMD MARKING CODE 43t smd 43t transistor smd code book transistor 43t SMD G1333 | |
kd smd transistorContextual Info: » •— SPD 28N03L Infineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS Drain-Source on-state resistance f îDS on 0.018 Q 30 A • Enhancement mode Continuous drain current • Avalanche rated |
OCR Scan |
28N03L SPD28N03L Q67040-S4139-A2 P-T0252 P-T0251-3-1 Q67040-S4142-A2 SPU28N03L S35bG5 Q133777 SQT-89 kd smd transistor | |
|
Contextual Info: BSO 220N Infineon t«ehneiog¡«i Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features • Dual N Channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 20 V ^fos on |
OCR Scan |
BS0220N Q67000-S4010 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã D13377T | |
smd transistor marking 7j
Abstract: TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE BS s BUZ103S E3045 Q67040-S4009-A2 diode marking code MU marking 684 diode smD
|
OCR Scan |
BUZ103S BUZ103S P-T0220-3-1 Q67040-S4009-A2 E3045A P-T0263-3-2 Q67040-S4009-A6 E3045 smd transistor marking 7j TRANSISTOR SMD MARKING CODE c015 TRANSISTOR SMD MARKING CODE BS s diode marking code MU marking 684 diode smD | |
XC+872Contextual Info: SPD 10N10 Inf i ne on technologies Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS 100 V • Enhancement mode Drain-Source on-state resistance ñ DS on1 0.2 Q. • Avalanche rated Continuous drain current |
OCR Scan |
10N10 11-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T XC+872 | |
|
Contextual Info: BUZ 73 Infineon technologies SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b ^DS on Package Ordering Code BUZ 73 200 V 7A 0.4 £2. TO-220 AB C67078-S1317-A2 Maximum Ratings Parameter Symbol Continuous drain current |
OCR Scan |
O-220 C67078-S1317-A2 0235bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T | |
|
Contextual Info: ,•— SPP 70N10L Infineon t«c hnoIogi Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current f ì DS onì 0.016 n |
OCR Scan |
70N10L SPP70N10L SPB70N10L P-T0220-3-1 Q67040-S4175 P-T0263-3-2 Q67040-S4170 S35bQ5 Q133777 SQT-89 | |
cc 3025 diode
Abstract: 5T4 tube BUZ110S MC 140 transistor 8235 smd transistor h7 E3045 Q67040-S4005-A2 transistor smd marking CODE Wb transistor marking smd 7c
|
OCR Scan |
BUZ110S BUZ110S P-T0220-3-1 Q67040-S4005-A2 E3045A P-TC263-3-2 Q67040-S4005-A6 E3045 cc 3025 diode 5T4 tube MC 140 transistor 8235 smd transistor h7 transistor smd marking CODE Wb transistor marking smd 7c | |
SMD TRANSISTOR MARKING 9f
Abstract: H7 marking code smd BUZ101SL E3045 Q67040-S4012-A2 004II
|
OCR Scan |
BUZ101SL_ P-TQ220-3-1 Q67040-S4012-A2 BUZ101SL E3045A P-TQ263-3-2 Q67040-S4012-A6 E3045 P-T0263-3-2 SMD TRANSISTOR MARKING 9f H7 marking code smd 004II | |
|
|
|||
TRANSISTOR SMD MARKING CODE 702
Abstract: 702 Z smd TRANSISTOR 702 Z TRANSISTOR smd TRANSISTOR SMD 702 N 702 H transistor smd smd diode 708 TRANSISTOR SMD MARKING CODE 702 4 702 y smd TRANSISTOR 703 TRANSISTOR smd 702 TRANSISTOR smd
|
OCR Scan |
BUZ104SL BUZ104SL P-T0220-3-1 Q67040-S4006-A2 E3045A P-T0263-3-2 Q67040-S4006-A6 E3045 TRANSISTOR SMD MARKING CODE 702 702 Z smd TRANSISTOR 702 Z TRANSISTOR smd TRANSISTOR SMD 702 N 702 H transistor smd smd diode 708 TRANSISTOR SMD MARKING CODE 702 4 702 y smd TRANSISTOR 703 TRANSISTOR smd 702 TRANSISTOR smd | |
transistor SMD 1gs
Abstract: 46n03l smd 1Gs SD-46 Diode
|
OCR Scan |
46N03L SPP46N03L P-T0220-3-1 Q67040-S4147-A2 SPB46N03L P-T0263-3-2 Q67040-S4743-A2 S35bQ5 Q133777 SQT-89 transistor SMD 1gs 46n03l smd 1Gs SD-46 Diode | |
2N3773 equivalent
Abstract: transistor c113 c113 transistor c112 TRANSISTOR d 331 TRANSISTOR equivalent transistor B A O 331 2N6262 2N6262 transistor 331 al jan2n3772
|
OCR Scan |
79mnj JAN2N3771. JAN2N3772. 2N3773. 2N4347. 2N4348. 2N6262 C-112 C-113 2N3773 equivalent transistor c113 c113 transistor c112 TRANSISTOR d 331 TRANSISTOR equivalent transistor B A O 331 2N6262 2N6262 transistor 331 al jan2n3772 | |
|
Contextual Info: BUZ 172 I nf ineon tachnologies SIPMOS Power Transistor • P channel • Enhancement mode • Avalanche rated Type Vds b flDS on Package Ordering Code BUZ 172 -100 V -5.5 A 0.6 £2 TO-220 AB C67078-S1451-A2 Maximum Ratings Parameter Symbol Continuous drain current |
OCR Scan |
O-220 C67078-S1451-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T | |
|
Contextual Info: SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b ^D S o n Package Ordering Code BUZ 20 100 V 13.5 A 0.2 n TO-220 AB C67078-S1302-A2 Maximum Ratings Parameter Values Symbol Continuous drain current Unit A b 13.5 |
OCR Scan |
O-220 C67078-S1302-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T | |
TRANSISTOR SMD MARKING CODE B7t
Abstract: transistor marking b7t BU2104S transistor smd marking JR BUZ104 TRANSISTOR SMD MARKING CODE BS t P-T0263-3-2 smd transistor marking JR marking b7t D1337
|
OCR Scan |
BUZ104S BU2104S P-T0220-3-1 Q67040-S4007-A2 BUZ104S E3045A P-T0263-3-2 Q67040-S4007-A6 E3045 TRANSISTOR SMD MARKING CODE B7t transistor marking b7t transistor smd marking JR BUZ104 TRANSISTOR SMD MARKING CODE BS t smd transistor marking JR marking b7t D1337 | |
|
Contextual Info: BSS 129 Infine on technologies SIPMOS Small-Signal Transistor • • • • • • • 240 V 0.15 A ^DSfon 20 O N channel Depletion mode High dynamic resistance Available grouped in VGs th> V DS 1D Type Pin C onfigu ration Marking Tape and Reel Information |
OCR Scan |
Q62702-S015 E6288 Q67000-S116 E6296: 235b05 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 | |
|
Contextual Info: BUZ 344 I nf ineon technologie» SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type ^DS to flDS on Package Ordering Code BUZ 344 100 V 50 A 0.035 n TO-218AA C67078-S3132-A2 Maximum Ratings Parameter Symbol Continuous drain current |
OCR Scan |
O-218AA C67078-S3132-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T | |
TRANSISTOR SMD MARKING CODE 7B 6 pin
Abstract: SmD TRANSISTOR a74 TRANSISTOR SMD MARKING E0 smd transistor 718 smd transistor 2Q BUZ 1025 Aajs T55B H7 marking code smd BUZ110SL
|
OCR Scan |
110SL BUZ110SL P-T0220-3-1 Q67040-S4004-A2 E3045A P-T0263-3-2 Q67040-S4004-A6 E3045 TRANSISTOR SMD MARKING CODE 7B 6 pin SmD TRANSISTOR a74 TRANSISTOR SMD MARKING E0 smd transistor 718 smd transistor 2Q BUZ 1025 Aajs T55B H7 marking code smd | |
TRANSISTOR SMD MARKING CODE 7AContextual Info: BSP 296 I nf ineon technologies SIPMOS 9 Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Type '/ DS BSP 296 100 V Type BSP 296 Ordering Code Q67000-S067 1A Pin 2 WDS(on) Package Marking 0.8 Q SOT-223 |
OCR Scan |
Q67000-S067 OT-223 E6327 Values100 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 TRANSISTOR SMD MARKING CODE 7A | |