80N03 Search Results
80N03 Datasheets (12)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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HSU80N03
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Huashuo Semiconductor | N-Ch 30V Fast Switching MOSFET with 80A continuous drain current, 4.9mΩ RDS(ON), 115W power dissipation, and low gate charge, suitable for synchronous buck converters. | Original | ||||
CJU80N03
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JCET Group | CJU80N03 N-Channel Power MOSFET in TO-252-2L package featuring 30V drain-source voltage, 80A continuous drain current, and low RDS(on) of 6.5mΩ at 10V gate voltage, suitable for power switching and high frequency applications. | Original | ||||
CJAC80N03
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JCET Group | N-Channel Power MOSFET CJAC80N03 with 30V drain-source voltage, 80A continuous drain current, 3.0mΩ typical RDS(on) at 10V VGS, and low gate charge, housed in a PDFN 5×6-8L package for high-density applications requiring efficient heat dissipation. | Original | ||||
JMTP380N03D
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Jiangsu JieJie Microelectronics Co Ltd | Dual N-channel enhancement mode power MOSFET with 30V drain-source voltage, 4.5A continuous drain current, and RDS(on) less than 36mΩ at VGS=10V in SOP-8 package. | Original | ||||
HKTQ80N03
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Shenzhen Heketai Electronics Co Ltd | HKTQ80N03 N-channel MOSFET with 30V drain-source voltage, 5.2mΩ on-resistance at 10V gate-source voltage, 80A continuous drain current, and 37W power dissipation in a surface-mount PDFN3333 package. | Original | ||||
MDD80N03D
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Microdiode Semiconductor | 30V N-Channel Enhancement Mode MOSFET, TO-252 package. | Original | ||||
SLD80N03T
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Maplesemi | N-channel 30V 80A Power MOSFET with RDS(on) of 4.0 mΩ at VGS = 10 V, advanced TRENCH technology, low Crss, fast switching, 100% avalanche tested, and suitable for PWM, load switch, and power management applications. | Original | ||||
SL80N03
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SLKOR | N-Channel Enhancement Mode, 30V, 80A, <6.5mohm, <10mohm, 170A IDM, 306mJ EAS, 83W PD, 1.74°C/W RθJC, -55~+150°C TJ, TSTG. | Original | ||||
SLN80N03T
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Maplesemi | N-Channel MOSFET with 30V drain-source voltage, 80A continuous drain current, 4.5mΩ typical RDS(on) at VGS = 10V, and 6.8mΩ at VGS = 4.5V, housed in a DFN3*3 package. | Original | ||||
SLM80N03T
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Maplesemi | N-channel 30V 80A MOSFET with typical RDS(on) of 3.9mΩ at VGS = 10V, housed in DFN5x6 package, designed for high-efficiency power management, load switching, and PWM applications. | Original | ||||
HKTD80N03
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Shenzhen Heketai Electronics Co Ltd | N-channel Power MOSFET with 30V drain-source voltage, 80A continuous drain current, 6mΩ maximum RDS(on) at 10V VGS, TO-252 package, and typical gate charge of 51nC. | Original | ||||
AK80N03K
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AK Semiconductor | AK80N03K N-Channel Enhancement Mode Power MOSFET with 30V drain-source voltage, 80A continuous drain current, and low on-resistance of less than 6.5mΩ at 10V gate-source voltage. | Original |
80N03 Price and Stock
Taiwan Semiconductor TSM180N03PQ33-RGGMOSFET N-CH 30V 25A 8PDFN |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSM180N03PQ33-RGG | Cut Tape | 9,857 | 1 |
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Taiwan Semiconductor TSM080N03EPQ56-RLGMOSFET N-CH 30V 55A 8PDFN |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSM080N03EPQ56-RLG | Cut Tape | 3,902 | 1 |
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Goford Semiconductor G80N03KN30V, 80A,RD<6.5M@10V,VTH1.0V~2. |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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G80N03K | Digi-Reel | 2,442 | 1 |
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Taiwan Semiconductor TSM080N03PQ56-RLGMOSFET N-CH 30V 73A 8PDFN |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSM080N03PQ56-RLG | Cut Tape | 2,325 | 1 |
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Taiwan Semiconductor TSM180N03CS-RLGMOSFET N-CHANNEL 30V 9A 8SOP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSM180N03CS-RLG | Cut Tape | 1,672 | 1 |
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80N03 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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80N03L
Abstract: SPP80N03L Q67040-S4735-A3 80n03 SPB80N03L
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80N03L SPP80N03L P-TO220-3-1 Q67040-S4735-A2 SPB80N03L P-TO263-3-2 Q67040-S4735-A3 80N03L SPP80N03L 80n03 SPB80N03L | |
smd code book B3 transistorContextual Info: SPP 80N03 Infineon technologies SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ^DS on 0.006 £2 A 80 b V 30 • dy/df rated |
OCR Scan |
80N03 SPP80N03 SPB80N03 P-T0220-3-1 Q67040-S4734-A2 P-T0263-3-2 Q67040-S4734-A3 Q133777 SQT-89 B535bQ5 smd code book B3 transistor | |
80n03
Abstract: 70H80 SPB80N03 SPP80N03
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80N03 SPP80N03 P-TO220-3-1 Q67040-S4734-A2 SPB80N03 P-TO263-3-2 Q67040-S4734-A3 80n03 70H80 SPB80N03 SPP80N03 | |
book FOR D 1047Contextual Info: SPP 80N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance f î D S o n • Avalanche rated Continuous drain current b 30 V 0 .0 0 6 Q 80 A • Logic Level • dv/df rated |
OCR Scan |
80N03L SPP80N03L SPB80N03L P-T0220-3-1 Q67040-S4735-A2 P-T0263-3-2 Q67040-S4735-A3 S35bQ5 Q133777 SQT-89 book FOR D 1047 | |
NP80N03MLEContextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
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NXP SAF7741
Abstract: SAF7741 TDF8555 TDF8555J NXP saf7740 NXP SAF7730 TDF8551J 0/NXP SAF7730 saf7730 audio
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TDF8555J TDF8555J NXP SAF7741 SAF7741 TDF8555 NXP saf7740 NXP SAF7730 TDF8551J 0/NXP SAF7730 saf7730 audio | |
power amplifier NXP tdf8546
Abstract: TDF8546 TDF8546TH AN10987 TDF8546J sot851
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TDF8546 TDF8546 power amplifier NXP tdf8546 TDF8546TH AN10987 TDF8546J sot851 | |
STR 6750
Abstract: 11N60 transistor SMD R1D TRANSISTOR SMD QP DK QP ic 3525 pwm application dc to dc converter 6 PIN SMD IC FOR SMPS SMD 3825 LED 4450 SMD SO-8 SMD MOSFET DRIVE 4450 8 PIN 200w power amplifier PCB layout
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AN-CoolMOS-06 TDA16888, Room14J1 Room1101 STR 6750 11N60 transistor SMD R1D TRANSISTOR SMD QP DK QP ic 3525 pwm application dc to dc converter 6 PIN SMD IC FOR SMPS SMD 3825 LED 4450 SMD SO-8 SMD MOSFET DRIVE 4450 8 PIN 200w power amplifier PCB layout | |
variable voltage regulator
Abstract: DETAILS of ic 40106 IC 40106 pin diagram HCF40106 BC337 circuit example buz11 application note buz11 r5 IC 40106 transistor bc337 80n03
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LPR30 LPR30 49KOhm, 50KOhm variable voltage regulator DETAILS of ic 40106 IC 40106 pin diagram HCF40106 BC337 circuit example buz11 application note buz11 r5 IC 40106 transistor bc337 80n03 | |
toy helicopter remote control circuit diagram
Abstract: TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter
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B192-H9213-X-X-7600 toy helicopter remote control circuit diagram TDA 2377 nokia bts str z 4267 rc helicopter circuit diagram PG-TO252-5-11 footprint nokia 5230 hardware TDA 2525 Campus Italia Vol 1 how to make rc helicopter | |
D1403
Abstract: 80N03 NP80N03MLE 80N03 263 NP80N03CLE NP80N03DLE NP80N03ELE NP80N03ELE-E1-AY NP80N03ELE-E2-AY NP80N03KLE
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NP80N03ELE, NP80N03KLE NP80N03CLE, NP80N03DLE, NP80N03MLE, NP80N03NLE NP80N03ELE-E1-AY NP80N03ELE-E2-AY NP80N03KLE-E2-AY NP80N03KLE-E1-AY D1403 80N03 NP80N03MLE 80N03 263 NP80N03CLE NP80N03DLE NP80N03ELE NP80N03ELE-E1-AY NP80N03ELE-E2-AY NP80N03KLE | |
80n03
Abstract: NP80N03MLE D1403 NP80N03CLE NP80N03DLE NP80N03ELE NP80N03ELE-E1-AY NP80N03ELE-E2-AY NP80N03KLE NP80N03KLE-E1-AY
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TDF8546J
Abstract: diode ib5 L2VM power amplifier NXP tdf8546 TDF8546 tda8546
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TDF8546 TDF8546 TDF8546J diode ib5 L2VM power amplifier NXP tdf8546 tda8546 | |
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Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
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80n03
Abstract: D1531 NP80N03MDE NP80N03CDE NP80N03DDE NP80N03EDE NP80N03EDE-E1-AY NP80N03EDE-E2-AY NP80N03KDE NP80N03KDE-E1-AY
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NP80N03EDE, NP80N03KDE NP80N03CDE, NP80N03DDE, NP80N03MDE, NP80N03NDE NP80N03EDE-E1-AY NP80N03EDE-E2-AY NP80N03KDE-E2-AY NP80N03KDE-E1-AY 80n03 D1531 NP80N03MDE NP80N03CDE NP80N03DDE NP80N03EDE NP80N03EDE-E1-AY NP80N03EDE-E2-AY NP80N03KDE NP80N03KDE-E1-AY | |
80N03
Abstract: NP80N03CDE NP80N03DDE NP80N03EDE NP80N03EDE-E1-AY NP80N03EDE-E2-AY NP80N03KDE NP80N03KDE-E1-AY NP80N03KDE-E2-AY NP80N03MDE
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optimos battery protection reverse
Abstract: 80N03s smd K 739 mosfet 50N03 80n06s2-09 25N06 50n03s2-07 817 CN 100P03P3L-04 TO-263-7 Package
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FIN-02601 100P03P3L-04 P-TO220-3 P-TO262-3 P-TO252-3 P-TO263-3 O-263-7) P-TO263-7 P-TO220-7 optimos battery protection reverse 80N03s smd K 739 mosfet 50N03 80n06s2-09 25N06 50n03s2-07 817 CN 100P03P3L-04 TO-263-7 Package | |
TLE7201
Abstract: BTS426L2 TLE 6289 xc 7270 TRANSISTOR SMD K27 BTS7960B TLE6289GP BSP 452-T bts5241l ISO11519
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B112-H6731-G12-X-7600 TLE7201 BTS426L2 TLE 6289 xc 7270 TRANSISTOR SMD K27 BTS7960B TLE6289GP BSP 452-T bts5241l ISO11519 | |
tda8554
Abstract: TDF8554 TDA8554J IRF5305 equivalent DBS37P
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TDF8554J TDF8554J tda8554 TDF8554 TDA8554J IRF5305 equivalent DBS37P | |
80N03
Abstract: D1847 NP80N03MDE
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NP80N03MDE NP80N03NDE NP80N03MDE-S18-AY O-220 MP-25K) NP80N03NDE-S18-AY O-262 MP-25SK) O-220) 80N03 D1847 | |
w1g transistor
Abstract: TDF8546 tdf8546th power amplifier NXP tdf8546 TDF8546J TDF8546TH N2
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TDF8546 TDF8546 w1g transistor tdf8546th power amplifier NXP tdf8546 TDF8546J TDF8546TH N2 | |
power amplifier NXP tdf8546
Abstract: TDF8546 TDF8546J
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TDF8546 TDF8546 power amplifier NXP tdf8546 TDF8546J | |
TDF8544
Abstract: 12AT90 TDF8544SD TDF8544J power booster circuit diagram TDF8544TH
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TDF8544 TDF8544 12AT90 TDF8544SD TDF8544J power booster circuit diagram TDF8544TH | |
TDF8544J
Abstract: TDF8544 TDF8544TH TDF8544SD
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TDF8544 TDF8544 TDF8544J TDF8544TH TDF8544SD | |