TRANSISTOR C104 Search Results

TRANSISTOR C104 Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA011	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini	Datasheet
TPCP8513	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8	Datasheet

TRANSISTOR C104 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan	sx3704 ap239 transistor 80139 8c547 +66c131c in2222a 2n50b 2n2064 radio ac176 ac126 sft353	PDF
TL113 Abstract: tl201 TL217 w3 smd transistor transistor c111 Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power ampliiers applications with frequencies from 700 MHz to 2200	Original	ptfa220081m pg-son-10 tl113 tl201 +3tl217 w3 smd transistor transistor c111	PDF
C-107 Abstract: C-108 IRGBC30FD2 c103 a ge Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.794 IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes	Original	irgbc30fd2 10khz o-220ab c-108 +2c-107 c103 a ge	PDF
capacitor marking c106 Abstract: NFM18Ps105 TL217 NFM18PS105R0J3 TL222 PTFA220081M Transistor tl217 TRANSISTOR SMD w2 c105 TRANSISTOR c103 TRANSISTOR DATA Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200	Original	ptfa220081m capacitor marking c106 nfm18ps105 tl217 +6nfm18ps105r0j3 tl222 transistor tl217 transistor smd w2 c105 transistor c103 transistor data	PDF
c102 TRANSISTOR Abstract: c103 TRANSISTOR c106 TRANSISTOR TRANSISTOR c105 TRANSISTOR c104 c103 m TRANSISTOR p 4712 NFM18PS105R0J3 c105 TRANSISTOR tl113 Contextual Info: PTFA220081M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 8 W, 700 – 2200 MHz Description The PTFA220081M an unmatched 8-watt LDMOS FET suitable for power amplifiers applications with frequencies from 700 MHz to 2200	Original	ptfa220081m pg-son-10 c102 transistor c103 transistor +8c106 transistor transistor c105 transistor c104 c103 m transistor p 4712 nfm18ps105r0j3 c105 transistor tl113	PDF
c103 a ge Abstract: C-107 C-108 IRGBC30FD2 Contextual Info: PD - 9.794 IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to	Original	irgbc30fd2 10khz o-220ab c-108 +2c103 a ge c-107	PDF
TL139 Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145 Contextual Info: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	ptfb183404f 340-watt h-37275-6/2 tl139 +9ptfb183404 ptfb183404ef tl148 transistor tl131 tl162 tl170 tl172 c105 transistor tl145	PDF
TRANSISTOR C802 Abstract: PTFA220121M LM7805 c SMD V4 MARKING p 4712 transistor c803 atc100a200jw Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	ptfa220121m 12-watt pg-son-10 transistor c802 +5lm7805 c smd v4 marking p 4712 transistor c803 atc100a200jw	PDF
Contextual Info: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular ampliiers covering the 2110 to 2170 MHz	Original	ptfb213004f 300-watt h-37275-6/2	PDF
VdS 2093 2009 Abstract: TL2014 transistor c114 chip transistor c114 diagram TL243 PTFB213004F TL145 tl1571 TL1621 transistor c114 Contextual Info: PTFB213004F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 300 W, 2110 – 2170 MHz Description The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz	Original	ptfb213004f 300-watt h-37275-6/2 vds 2093 2009 +8tl2014 transistor c114 chip transistor c114 diagram tl243 tl145 tl1571 tl1621 transistor c114	PDF
C-107 Abstract: C-108 IRGBC30FD2 transistor c107 m IRGBC30 c103 a ge Contextual Info: PD - 9.794 IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to	Original	irgbc30fd2 10khz o-220ab c-108 +4c-107 transistor c107 m irgbc30 c103 a ge	PDF
C801 Abstract: 1/db3 c801 Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power ampliier applications in the 700 to 2200 MHz. This LDMOS	Original	ptfa220121m 12-watt pg-son-10 c801 +11/db3 c801	PDF
TL272 Abstract: tl271 TL274 5228 voltage regulator TL279 TL246 c221 TRANSISTOR TL-250 tl2741 HD 1077 O Contextual Info: PTFB201402FC Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz Description The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty	Original	ptfb201402fc h-37248-4 17ubstances tl272 +9tl271 tl274 5228 voltage regulator tl279 tl246 c221 transistor tl-250 tl2741 hd 1077 o	PDF
c102 TRANSISTOR Abstract: PTFA220121M NFM18PS105R0J3 tl111 TRANSISTOR C802 TL204 TL231 c801 TL-205A tl113 Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	ptfa220121m 12-watt pg-son-10 c102 transistor +8nfm18ps105r0j3 tl111 transistor c802 tl204 tl231 c801 tl-205a tl113	PDF

TRANSISTOR C802 Abstract: TL2262 c102 TRANSISTOR C102 M transistor atc100a c103 m TRANSISTOR c103 TRANSISTOR ATC100A100JW150X smd transistor bd 37 TRANSISTOR c104 Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	ptfa220121m 12-watt pg-son-10 transistor c802 +9tl2262 c102 transistor c102 m transistor atc100a c103 m transistor c103 transistor atc100a100jw150x smd transistor bd 37 transistor c104	PDF
Contextual Info: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	ptfb183408sv 340-watt	PDF
transistor c104 M 123 Abstract: c103 a ge Contextual Info: PD - 9.794 bitem ational SqrIR ectifier IRGBC30FD2 Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to	OCR Scan	irgbc30fd2 10khz c-107 5545e +5tq-220ab c-108 554s2 transistor c104 m 123 c103 a ge	PDF
TL225 Abstract: ATC100A6R2CW150X Contextual Info: PTFA220121M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 – 2200 MHz Description The PTFA220121M is an unmatched 12-watt LDMOS FET intended for power amplifier applications in the 700 to 2200 MHz. This LDMOS	Original	ptfa220121m 12-watt pg-son-10 tl225 +1atc100a6r2cw150x	PDF
LQ9P031 Abstract: TRANSISTOR c104 TRANSISTOR D640 C104 D640 DF9B-31S-1V TC-10 D639 TRANSISTOR 443-T Contextual Info: LQ9P031 TFT-LCD Module LCD Data Sheet FEATURES DESCRIPTION • Display Diagonal: 8.4" The SHARP LQ9P031 Color TFT-LCD module is an active matrix Liquid Crystal Display LCD incorporating amorphous silicon Thin Film Transistor (TFT). The module is composed of a color TFT-LCD panel,	Original	lq9p031 12-bit ang170 transistor c104 +7transistor d640 c104 d640 df9b-31s-1v tc-10 d639 transistor 443-t	PDF
npn TRANSISTOR c105 Abstract: TRANSISTOR c104 c105 TRANSISTOR TRANSISTOR c105 s 271 5A c104 TRANSISTOR 2N3720 2N4901 2N4906 SDT3322 Contextual Info: ^outran i?K i5 ty) STr ättm=©( MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER Devices. Inc. PIMP EPITAXIAL PLANAR POWER TRANSISTOR* (FORMERLY 71) CONTACT METALLIZATION Base and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available)	OCR Scan	203mm c-105 npn transistor c105 transistor c104 +8c105 transistor transistor c105 s 271 5a c104 transistor 2n3720 2n4901 2n4906 sdt3322	PDF
c104 TRANSISTOR Abstract: TRANSISTOR c104 C104 "Die No." Contextual Info: DIE No. NPN Small Signal TRANSISTOR DIE No. •MAXIMUM RATINGS T a = 2 5 ° C Free Air Symbol Value Unit Collector-Emitter Voltage VcEO 20 V Collector-Base Voltage VcBO 30 V Emitter-Base Voltage V 3 V ■ DESCRIPTION Collector Current Continuous lc 25 mA	OCR Scan	c--104 bfs20 150mw c104 transistor +3transistor c104 c104 die no	PDF
LQ9P021 Abstract: TRANSISTOR c104 TRANSISTOR D640 C104 D639 D640 DF9B-31S-1V DH399 tcl lcd tv power circuit diagram Contextual Info: LQ9P021 TFT-LCD Module LCD Data Sheet FEATURES DESCRIPTION • Display Diagonal: 8.4" The SHARP LQ9P021 color TFT-LCD module is an active matrix Liquid Crystal Display LCD module incorporating amorphous silicon Thin Film Transistor (TFT). It is composed of a color TFT-LCD panel, driver	Original	lq9p021 400-line 350-line 480-line +8transistor c104 transistor d640 c104 d639 d640 df9b-31s-1v dh399 tcl lcd tv power circuit diagram	PDF
c102 TRANSISTOR Abstract: LM7805 M SMD R804 c103 TRANSISTOR transistor c107 m TRANSISTOR c801 NFM18PS105R0J3 TRANSISTOR c104 TL217 PTFA220041M Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency	Original	ptfa220041m pg-son-10 c102 transistor lm7805 m smd +7r804 c103 transistor transistor c107 m transistor c801 nfm18ps105r0j3 transistor c104 tl217	PDF
transistor c735 Abstract: ATC100A120FW150XB TRANSISTOR c104 TL107 c103 m TRANSISTOR c103 TRANSISTOR TRANSISTOR C802 C735 transistor TRANSISTOR C107 TRANSISTOR C103 Contextual Info: PTFA220041M Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 4 W, 700 – 2200 MHz Description The PTFA220041M is an unmatched 4-watt LDMOS FET intended for power amplifier applications in the 700 MHz to 2200 MHz operating range. This LDMOS device offers excellent gain, efficiency	Original	ptfa220041m pg-son-10 transistor c735 atc100a120fw150xb +8transistor c104 tl107 c103 m transistor c103 transistor transistor c802 c735 transistor transistor c107 transistor c103	PDF

TRANSISTOR C104 Search Results

TRANSISTOR C104 Result Highlights (5)

TRANSISTOR C104 Datasheets Context Search

sx3704

TL113

C-107

capacitor marking c106

c102 TRANSISTOR

c103 a ge

TL139

TRANSISTOR C802

VdS 2093 2009

C-107

C801

TL272

c102 TRANSISTOR

TRANSISTOR C802

transistor c104 M 123

TL225

LQ9P031

npn TRANSISTOR c105

c104 TRANSISTOR

LQ9P021

c102 TRANSISTOR

transistor c735