TRANSISTOR C 558 Search Results

vp 3082

Abstract: TDA3081 TDA3082 tda 3081 TDA 1030 SIGNETICS tda 266 55812G transistor ITT CA 3082
Contextual Info: Sign etics Interface-Transistor Arrays T D A 3081/3082 Seven Transistor Arrays C O N N E C T IO N D IA G R A M G E N E R A L D E SC R IPTIO N The T D A 3081 and T D A 308 2 are m o n o lith ic integrated c irc u its each consisting o f seven separate n-p-n transistor«,

bc556

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER . HIGH VO LTAG E: BC556, VCEo= -65V . LOW NOISE: BC559, BC560 • C om plem ent to BC546 . BC 550 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base C apacitance

16 pin diagram of uln 2003

Abstract: ULM2002 pin diagram of UlN2004 ic. uln 2003 uln 2003 pin diagram uln series 14 PIN IC ULN 2003 pin of ULN 2003 ULN2003 features ULN2001
Contextual Info: S ig rietics Interface - Transistor Arrays ULN 2001/2/3/4 High Voltage/ Current Darlington Transistor Arrays C O N N E C T IO N D IA G R A M G E N E R A L D E SC R IPTIO N These high-voltage, high-current D a rlirg to n transistor arrays are com prised o f seven silicon NPN D a rlington

transistor B 560

Abstract: BC 557 PNP TRANSISTOR transistor bc 558 pnp TRANSISTOR C 557 B transistor c 557 transistor bc 557 c le transistor 557 b B 557 PNP TRANSISTOR TRANSISTOR 557 TRANSISTOR BC 560
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER • HIGH VO LTAG E: BC556, V CEo = -65V • LO W NOISE: BC559, BC560 • C om plem ent to BC546 . BC 550 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase C apacitance

D 1437 transistor

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

Contextual Info: SYMSEMI SEMICONDUCTOR T O -92 Plastic Encapsulate Transistors BC 556 ,A ,B ,C BC 557 , B BC 558 , B TRANSISTOR PNP TO — 92 f1 — q> ei s j FEATURES Power d is s ip a tio n Pcm : 0.625 W (Tamb=25 °C) C o lle c to r c u rre n t I cm : “0. 1 A C o lle c to r base v o lta g e

BC556

Abstract: of bc557 BC557 of pnp transistor BC557 of transistor bc558 transistor bc558 features bc556c equivalent BC558C BC556B BC557A
Contextual Info: BC556, B, C BC557, A, B, C BC558, A, B, C Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES PNP Transistor TO-92 Power dissipation PCM: 0.625 W Tamb=25℃ Collector current - 0.1 A ICM: Collector-base voltage

BLW81

Contextual Info: -^dnauator Lpioauoti, Unc. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER • HIGH VOLTAGE: BC556, VCEo= -65V • LOW NOISE: BC559, BC560 • Complement to BC546 . BC 550 ABSOLUTE MAXIMUM RATINGS TA=25°C C h a ra c te ris tic Sym bol Collector-Base Capacitance

BC557

Abstract: TRANSISTOR C 557 B transistor BC557 base collector emitter bc558 transistor 557 b transistor BC558 base collector emitter BC558 pnp transistor BC558B transistor c 557 BC557B MCC
Contextual Info: MCC TO-92 P lastic-E n capsu late T ran sisto rs BC556,B/BC557,A,B,C/BC558,B TRANSISTOR PNP FEATU RES dissipation 0.6 2 5 W (T am b=25'C ) Pcm : current IcM : -0.1 A BC 556 : -80 V V cbo; BC 557 : -50V BC 558 : -30 V storage junction temperature range Tj.Tstg: -5 5 ° C to + 150°C

BC547 transistor kec

Abstract: APPLICATION OF BC548 transistor BC547 BC547 transistor BC548 BC548 pnp transistor BC547 w 2 d bc548 pnp bc547 application note of transistor BC548
Contextual Info: SEMICONDUCTOR TECHNICAL DATA BC546/7/8 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES • High Voltage : BC546 V C = 6 5 V . • For Complementary With PNP Type BC556/557/558. eo MAXIMUM RATINGS Ta=25°C CHARACTERISTIC

TRANSISTOR J 5804 NPN

Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.

APPLICATION OF BC548 transistor

Abstract: bc547 pnp BC547 BC548 pnp transistor pnp bc547 transistor bc548 pnp BC548 BC548 TRANSISTOR BC546 for bc548 npn transistor
Contextual Info: SEMICONDUCTOR BC546/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C A FEATURES ・High Voltage : BC546 VCEO=65V. ・For Complementary With PNP Type BC556/557/558. N E K G J D MAXIMUM RATING Ta=25℃

Contextual Info: BC556,B BC557,A,B,C BC558,B Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features PNP Silicon l Through Hole Package l 150oC Junction Temperature Amplifier Transistor 625mW Pin Configuration Bottom View C B E Mechanical Data

transistor D 1557

Abstract: 1557 b transistor F88 diode transistor IC 1557 B transistor 1557 b AF280 Germanium power
Contextual Info: 5SC » • fi235bOS GG04QÔ1 S H S I E â PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “ fo r m ixe r and o sc illa to r c irc u its up to 9 0 0 M H z - 7^ 3/-07 AF 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor Is particularly

transistor 2SB

Abstract: c103 m TRANSISTOR 2SB558 c103 TRANSISTOR 2SB558-R MTT 65 A 12 N 8SD4 2SD428 2SB5580 C103 pnp
Contextual Info: 2SB SILICON PNP TRIPLE DIFFUSED MESA TRANSISTOR 558 U n i t i n mm o • Power A m p l i f i e r A p p l i c a t i o n s JZfe&OMAX. SiWfch-c-i- ; p c = 6 0W ; Vqjjq = - l o o v 2SD488 y 7 '1 * y f i ' K i b t - t o 4 ow t Hi - P i * - r < * r y y 't n j j g k i r c ^ m r - t o

Contextual Info: M19500/558-02+JAN Transistors Independent Transistor Array Military/High-RelY Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m P(D) Max. (W) Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200 I(CBO) Max. (A)

Contextual Info: M19500/558-02+JANTXV Transistors Independent Transistor Array Military/High-RelY Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m P(D) Max. (W) Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200 I(CBO) Max. (A)

Contextual Info: M19500/558-01+JANTXV Transistors Independent Transistor Array Military/High-RelY Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m P(D) Max. (W) Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200 I(CBO) Max. (A)

Contextual Info: M19500/558-02+JANTX Transistors Independent Transistor Array Military/High-RelY Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m P(D) Max. (W) Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200 I(CBO) Max. (A)

Contextual Info: M19500/558-01+JAN Transistors Independent Transistor Array Military/High-RelY Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m P(D) Max. (W) Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200 I(CBO) Max. (A)

Contextual Info: M19500/558-01+JANTX Transistors Independent Transistor Array Military/High-RelY Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m P(D) Max. (W) Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200 I(CBO) Max. (A)

2N2907

Abstract: 2N6987U JANTX2N6987U
Contextual Info: .OPTEK Product Bulletin JANTX, JANTXV, 2N6987U September 1996 Surface Mount Quad PNP Transistor Type JANTX, JANTXV, 2N6987U Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Ceramic surface mount package • Hermetically sealed