TRANSISTOR C 460 Search Results

F1K marking

Contextual Info: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector D issipation Storage Tem perature

BCW General Purpose Transistor

Abstract: l9902
Contextual Info: BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector Dissipation

L9902

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BCX70J GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent C ollector D issipation Storage Tem perature

Contextual Info: BCX71J PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ol le c to r-B a s e V o lta g e C o lle c to r-E m ltte r V o lta g e E m itte r-B a s e V o lta g e C o lle c to r C u rre n t

4420 Transistor

Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
Contextual Info: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.

sot 23 mark AD

Abstract: BCW60A BCW60B BCW60C BCW60D
Contextual Info: BCW60A/B/C/D BCW60A/B/C/D General Purpose Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter VCEO Collector-Emitter Voltage

transistor mark BA

Contextual Info: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Symbol

Contextual Info: BCX70J NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25t: C h a ra cte ristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

BCW61A

Abstract: marking BA RT TRANSISTOR PNP BA RT SOT 89 BCW61B BCW61C BCW61D
Contextual Info: BCW61A/B/C/D PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature

D 1437 transistor

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3020 NPN EPITAXIAL P LA N A R T Y P E DESCRIPTION 2 S C 3 0 2 0 is a silicon NPN epitaxial planar type transistor design­ OUTLINE DRAWING Dimensions in mm ed for UHF power amplifier applications. FEATURES • High gain: G p e S lO d B , @f = 52 0M H z, V c c - 1 2 .5 V ,

BC556

Abstract: of bc557 BC557 of pnp transistor BC557 of transistor bc558 transistor bc558 features bc556c equivalent BC558C BC556B BC557A
Contextual Info: BC556, B, C BC557, A, B, C BC558, A, B, C Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES PNP Transistor TO-92 Power dissipation PCM: 0.625 W Tamb=25℃ Collector current - 0.1 A ICM: Collector-base voltage

transistor bc237 bc337

Abstract: BC238 NPN transistor download datasheet BC239 BC237 BC238 BC239 NPN transistor download datasheet BC238 datasheet transistor bc237 datasheet
Contextual Info: BC237.BC239 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups, A, B, and C, according to its DC current gain. 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings Ta = 25 OC

BCY69

Abstract: BCY 69 transistor 468
Contextual Info: BCY 69 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S ILICIUM , PLANAR EPITAXIAL - LF small signal amplification low noise Amplification BP petits signaux (faible bruit) v CEO 20 V 'c 100 mA *216 (2 600 - 900 F (0,2 mA) 5 dB max Maximum power dissipation

adc 515

Abstract: MJ7000
Contextual Info: MJ7000 SILICON 30 AMPERE POWER TRANSISTOR HIGH-POWER NPN SILICON TRANSISTOR NPN SILICON . . . designed for use in industrial power amplifier and switching circuits applications. 100 V O L T S 150 W ATTS High DC Current Gain — h f E = 20-100 @ l c = 10 Adc

TRANSISTOR N 1380 600 300 SC

Abstract: QM300HA-H QM300h
Contextual Info: MITSUBISHI TRANSISTOR M ODULES QM300HA-HK HIGH POWER SWITCHING U SE _ INSULATED TYPE j ! QM300HA-HK [ 1C C o lle cto r c u rre n t.3 0 0 A \ Vcex C o lle c to r-e m itte r v o lta g e . 600V j

BCW60A

Abstract: BCW60B BCW60C BCW60D
Contextual Info: BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Rating Unit 32 32 5 100 350 150 V V V mA mW °C VCBO VCEO VEBO IC PC T STG Collector-Base Voltage Collector-Emitter Voltage

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3104 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION 2 S C 3 1 0 4 is a silicon NPN epitaxial planar type transistor specifi­ OUTLINE DRAWING Dimensions in mm cally designed for UHF power amplifier applications. FEATURES •

Contextual Info: What H E W L E T T m in M P A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:

BC557

Abstract: bc558 bc556 BC557 TRANSISTOR BC558 PNP transistor CBC556 Transistor Bc556 BC557 PNP TRANSISTOR TRANSISTOR BC558 bc556 equivalent
Contextual Info: BC556, A/B BC557, A/B/C BC558, A/B/C PNP General Purpose Transistor COLLECTOR 3 TO-92 2 BASE 1 1 EMITTER 2 3 Maximum Ratings TA=25℃ C unless otherwise noted Rating Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous

transistor smd marking BA

Abstract: transistor smd marking bb transistor BC 550 transistor smd marking BA sot-23 transistor smd marking BC BCW61B bc transistor icbo nA MARKING SMD PNP TRANSISTOR transistor smd ba rs TRANSISTOR BC 550 b
Contextual Info: Transistors IC SMD Type General Purpose Transistor BCW61A/B/C/D Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 PNP Epitaxial Silicon Transistor 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05

BC557

Abstract: BC558 bc556 transistor BC558 base collector emitter transistor BC558 bc557 to92 transistor BC557 base collector emitter BC557 PNP TRANSISTOR free BC557 BC558 PNP transistor
Contextual Info: BC556, A/B BC557, A/B/C BC558, A/B/C PNP General Purpose Transistor COLLECTOR 3 P b Lead Pb -Free 2 BASE 1 1 EMITTER 2 3 TO-92 Maximum Ratings ( TA=25℃ C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

PTH60G30BD150N

Abstract: PTH62H02AR180M265 PTH59F PTH61
Contextual Info: POSISTORS FO R C IR C U IT PRO TECTIO N PTH9M/59F SERIES FOR POWER TRANSISTOR OVERHEAT PROTECTION PTH9M Part Number * PTH9M04D471TS2F333 PTH59F04D471TS PTH9M04D222TS2F333 ♦PTH59F04D222TS □ BH BG TS 70 25 °C Resistance TS-10 (°C) TS (°C) Max. Voltage

BC557

Abstract: BC557 transistor BC556 BC558C
Contextual Info: BC556, A/B BC557, A/B/C BC558, A/B/C PNP General Purpose Transistor COLLECTOR 3 * "G" Lead Pb -Free TO-92 2 BASE 1 1 EMITTER 2 3 Maximum Ratings ( TA=25℃ C unless otherwise noted) Rating Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage