TRANSISTOR C 459 Search Results

transistor NEC D 822 P

Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters

D 1437 transistor

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the

BCY69

Abstract: BCY 69 transistor 468
Contextual Info: BCY 69 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S ILICIUM , PLANAR EPITAXIAL - LF small signal amplification low noise Amplification BP petits signaux (faible bruit) v CEO 20 V 'c 100 mA *216 (2 600 - 900 F (0,2 mA) 5 dB max Maximum power dissipation

Contextual Info: What H E W L E T T m in M P A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-32011 AT-32033 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:

LEI-4

Abstract: Mitsubishi transistor ve32
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM200DY-HB HIGH POWER SWITCHING USE INSULATED TYPE j QM200DY-HB 1Ic Collector c u rre n t.200A •V c e x Collector-em itter • hFE DC current g am . 750 . v o lta g e 600V

TRANSISTOR J 5804 NPN

Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.

nec hf 324

Abstract: transistor NEC B 617 transistor NEC D 587 nec 2501 Le 629 341S NEC 2501 LE 737 2SC5338 transistor lc 7822 c
Contextual Info: PRELIMINARY DATA SHEET Silicon Transistor 2SC5338 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R E Q U E N C Y LOW D IS T O R T IO N A M P L IF IE R DESCRIPTION The 2SC5338 is designed for a low distortion and low noise RF am plifier with an operation on the low supply

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from

AM/SSC 9500 ic data

Contextual Info: PRELIMINARY DATA SHEET IV IF f " / h ETERO JUNCTION FIELD EFFECT TRANSISTOR / NE428M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE428M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

Contextual Info: N ational J u ly 1 9 9 6 S e m ic o n d u c t o r ” NDS8926 Dual N-Channel Enhancement Mode Field Effect Transistor G e n e ra l D e s c r ip tio n F e a tu re s T he s e N -C h a n n e l e n h a n c e m e n t m o d e e ffe c t tra n s is to rs a re p ro d u c e d

Contextual Info: Philips Semiconductors bbS3T31 00B3&53 IflS « A P X Product specification N-channel enhancement mode vertical D-MOS transistor BSP152 N AMER PHILIPS/DISCRETE FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. SYMBOL v DS • High-speed switching

Contextual Info: GaAs IRED & PHOTO-TRANSISTOR TLP626,-2,-4 TLP626 P R O G R A M M A B L E CO N TR O LLER S A C / D C -IN P U T M O D U L E U n it in mm T E L E C O M M U N IC A T IO N , 3 Tl.1’626 Weight : 0.26g T he TOSHIBA TLP626, -2 and -4 consist of gallium arsenide infrared

NE3512S02-T1D-A and s2p

Abstract: rt/duroid 5880 NE3512 NE3512S02-T1C ne3512s02 s2p d marking Micro-X maximum gain s2p NE3512S02-T1C-A NE3512S02-T1D-A HS350
Contextual Info: HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3512S02 C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz • Micro-X plastic S02 package APPLICATIONS

TLP626

Contextual Info: GaAs IRED-a PHOTO-TRANSISTOR TLP626,-2,-4 TLP626 PRO GRAM M ABLE CONTROLLERS AC/D C-IN PU T MODULE TELECOM M UNICATION The TOSHIBA TLP626, -2 and -4 consist of gallium arsenide infrared em itting diodes connected in inverse parallel, optically coupled to a

80011a

Abstract: marking code 11A IRFI840G
Contextual Info: PD - 97114 IRGI4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses 5µs SCSOA Square RBSOA 100% of The Parts Tested for ILM

PS2501A-1-A

Abstract: Optocoupler with transistor Collector amplifier PS2501A-1-Q-A AN3010 PS2501A-1Q-A AN-3010
Contextual Info: A p p l i c at i o n N o t e AN3010 Design Guideline for a Renesas/CEL Optocoupler with Transistor Output Authors: Van N. Tran CEL Staff Application Engineer, Opto Semiconductors Larry Sisken CEL Product Marketing Manager, Opto Semiconductors Wei Z. Jiang, Graduate Intern MSEE , SJSU

PS2501 optocoupler

Abstract: AN3010 nec optocoupler AN-3010 LINEAR OPTOCOUPLER PS2501-1-A AN3009
Contextual Info: A p p l i c at i o n N o t e AN3010 Design Guideline for an NEC/CEL Optocoupler with Transistor Output Authors: Van N. Tran Staff Application Engineer, CEL Opto Semiconductors Larry Sisken Product Marketing Manager, CEL Opto Semiconductors Introduction A standard optocoupler provides signal transfer between

PS2501 optocoupler

Abstract: AN-3004 3004 IC 2PS25 PS2501-1 optocoupler ic PS2501 3004 transistor
Contextual Info: A p p l i c at i o n N o t e AN 3004 How to simulate Current Transfer Ratios CTR and long-term CTR degradation in transistor optocouplers by Van N. Tran Staff Applications Engineer, CEL Opto Semiconductors Introduction Methodology There are a variety of analog and digital optocouplers

DN-12

Contextual Info: A J ÎK c w m a n A M P com pany RF MOSFET Power Transistor, 15W, 12V 2 - 1 7 5 MHz DU1215S Features • • • • • • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices

2sc5194-t1

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AM PURER NPN SILICON EPITAXIALTRANSISTOR P A C K AG E D R A W IN G S FEATU RES • Low Voltage O peration, Low Phase D istortion • Low Noise Unit: mm N F = 1.5 dB TYP. @ V ce = 3 V, Ic = 7 mA, f = 2 GHz

SMM70N10

Contextual Info: SMM70N10 CZ* Sin ilico n ix c o r p o r a te d N-Channel Enhancement Mode Transistor TQ-204AE TO-3 BOTTOM VIEW PRODUCT SUMMARY V(BR)DSS r DS(ON) •d (V) (ii) (A) 100 0.025 70 1 DRAIN (CASE) 2 GATE 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

PS9505

Abstract: a 3120 opto HCPL-3120-000E equivalent A 3120 opto HCPL-3120-500E HCPL3120-000E HCPL3120 HCPL-3120-300 AN-3006 PS9505-V
Contextual Info: A p p l i c at i o n N o t e AN 3006 Optocoupler Performance Comparison: NEC PS9505 vs. Avago HCPL-3120 Introduction Both the PS9505 and HCPL-3120 are optically-coupled isolators that employ a GaAlAs LED on the input side and a photo diode, a signal processing circuit, and a power output transistor on the output side. They feature large

a 3120 opto

Abstract: equivalent A 3120 opto HCPL-3120-500E HCPL3120-000E HCPL-3120-000E opto A 3120 HCPL-3120-060E HCPL3120 a 3120 PS9552L3-V
Contextual Info: A p p l i c at i o n N o t e AN 3006 Optocoupler Performance Comparison: NEC PS9552 vs. Avago HCPL-3120 Introduction Both the PS9552 and HCPL-3120 are optically-coupled isolators that employ a GaAlAs LED on the input side and a photo diode, a signal processing circuit, and a power output transistor on the output side. They feature large

112-12a

Abstract: 2SC452 2SA1029 1804ce
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English