TRANSISTOR C 4004 Search Results

MRF604

Abstract: MRF-604 MM531
Contextual Info: MOTOROLA SC XSTRS/R F MbE D b3b?2SM 00^4004 MOTOROLA G T -3 -ä -c e . • SEMICONDUCTOR TECHNICAL DATA MRF604 The R F Line 1.0 W - 175 M H z NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR NPN SILICON . . . designed for 12.5 Volt VH F large-signal amplifier applications

Contextual Info: SFH6315T/SFH6316T/SFH6343T Vishay Semiconductors High Speed Optocoupler, 1 MBd, Transistor Output FEATURES SFH6315/6 8 VCC NC 1 A 2 7 BVB C 3 6 C NC 4 5 E SFH6343 NC 1 8 VCC A 2 7 NC C 3 6 C NC 4 5 E i179069 DESCRIPTION The SFH6315T/SFH6316T/SFH6343T, high speed

SFH6343

Abstract: SFH6343T
Contextual Info: SFH6315T/SFH6316T/SFH6343T Vishay Semiconductors High Speed Optocoupler, 1 MBd, Transistor Output FEATURES SFH6315/6 8 VCC NC 1 A 2 7 BVB C 3 6 C NC 4 5 E SFH6343 NC 1 8 VCC A 2 7 NC C 3 6 C NC 4 5 E i179069 DESCRIPTION The SFH6315T/SFH6316T/SFH6343T, high speed

Contextual Info: SFH636 Vishay Semiconductors Optocoupler, High Speed Phototransistor Output, 1 Mbd, 10 kV/ms CMR, Split Collector Transistor Output FEATURES C 1 6 VCC A 2 5 E NC 3 4 • High speed connection optocoupler without base • Isolation test voltage: 5300 VRMS C

Contextual Info: SFH636 Vishay Semiconductors Optocoupler, High Speed Phototransistor Output, 1 Mbd, 10 kV/ms CMR, Split Collector Transistor Output FEATURES C 1 6 VCC A 2 5 E NC 3 4 • High speed connection optocoupler without base • Isolation test voltage: 5300 VRMS C

Contextual Info: SFH6315T/SFH6316T/SFH6343T Vishay Semiconductors High Speed Optocoupler, 1 MBd, Transistor Output FEATURES SFH6315/6 NC 1 8 VCC • Surface mountable A 2 7 BVB • Industry standard SOIC-8 footprint C 3 6 C NC 4 5 E • Compatible with infrared vapor phase reflow

Contextual Info: SFH6315T/SFH6316T/SFH6343T Vishay Semiconductors High Speed Optocoupler, 1 MBd, Transistor Output FEATURES SFH6315/6 NC 1 8 VCC • Surface mountable A 2 7 BVB • Industry standard SOIC-8 footprint C 3 6 C NC 4 5 E • Compatible with infrared vapor phase reflow

Contextual Info: BUZ32 Semiconductor Data Sheet October 1998 9.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET This is an N -C h a n n e l e n h a n c e m e n t m ode silicon g ate pow er field effect transistor d es ig n e d for applications such as File Number 2416.1 Features

0405-1000M

Abstract: J307
Contextual Info: 0405-1000M Rev C . 0405-1000M 1000 Watts - 40 Volts, 300µs, 10% UHF Pulsed Radar 400 - 450 MHz GENERAL DESCRIPTION The 0405-1000M is an internally matched, COMMON EMITTER transistor capable of providing 1000 Watts of pulsed RF output power in a push-pull

E6327

Abstract: transistor bc 588 transistor bc 855 BAV99E6327 BGX50AINCT-ND BAS70E6327 BC 194 TRANSISTORS BC847A-E6327 smbd7000E6327 BAV199E6327
Contextual Info: Transistor Pin Out Diodes and Transistors Fig. 2 Fig. 1 1 Fig. 3 Fig. 4 3 3 3 1 2 1 2 3 1 2 SOT-343 3 3 2 3 1 4 2 2 2 1 TO-220-3-1 TO-220-2-2 SOT-89 SOT-23 Pkg Pin 1 Pin 2 Pin 3 Pin 4 SOT-23 B E C — SOT-89 B C E — SOT-343 B E C E TSFP-4 1 TSLP-2-7 NEW!

TIS43

Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.

F5003

Abstract: 1N4734
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F5003 The RF MOSFET Line RF P ow er Field E ffe c t Transistor Motorola Preferred Device N-Channel Enhancement-Mode The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

Contextual Info: SIEMENS SFH6941T LOW CURRENT INPUT MINI OPTOCOUPLER Preliminary Data Sheet i Package Dim ensions in mm FEATURES Transistor O ptocoupler In SO T223 Package End Stackable, 1.27 m m Spacing Low C urrent Input Very High CTR, 150% Typical at lF-1 m A, VCE*0 .S V

Contextual Info: P R E C I S I O N B U L K M E T A L F O I L T E C H N O L O G Y VISHAY MODEL 1421 MIN. Hermetic Resistor Network 12 Pin Transistor Outline The 12 pin TO-8 package is suitable for ladder networks up to ten bits and other more complicated networks. It is also a good choice

Contextual Info: 7 ^ 5 3 7 OGESbbb fl • ' T ' - 3 C| - H SGS-THOMSON BUZ20 m N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR S G TYPE BUZ20 30E S-THOMSON VDss 100 V ^DS on 0.2 SI D Id 12 A • 100 VOLTS - FOR UPS APPLICATIONS • ULTRA FAST SWITCHING • RATED FOR UNCLAMPED INDUCTIVE

250w smps

Abstract: BUZ353
Contextual Info: /= 7 S G S -T H O M S O N ^7# MfgtHiimiltgTriMDfgS BUZ353 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^D S(on BUZ353 500 V 0.6 fl 9.5 A • HIGH SPEED SW ITCHING • HIGH VO LTAG E - 500V FOR OFF-LINE SMPS • HIGH C URRENT - 9.5A FOR UP TO 250W

BUZ60

Contextual Info: C T SGS-THOMSON ^ 7 Æ» M f f lm iit g T M O È S BUZ60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS BUZ60 400 V ^ D S o n 1.0 fi 5.5 A • HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE - FOR REDUCED COST AND

buz41a

Contextual Info: m TTERSB? GD2Thû2 b • S C S -T H O M S O N BUZ41A [i*[itt[L i g ^ [M iD S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR S G 30E S-THOMSON TYPE BUZ41A Voss 500 V ^DS(on) 1.5 n D •d 4.5 A • HIGH VOLTAGE - FOR OFF-LINE SMPS • ULTRA FAST SWITCHING FOR OPERATION

buz354

Contextual Info: F ^ J ^ 7# , S G S - T H O M S O N BUZ354 llD gl^ IlLI(gTrMD(gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS(on BUZ354 500 V 0.8 Ü 8 A • HIGH SPEED SW ITCHING • HIGH VO LTAG E - 500V FOR OFF-LINE SMPS • HIGH C U R R E N T -8 A FOR UP TO 200W SMPS

Contextual Info: 3DE r=J D • 7 ^ 2 3 7 JDG2T73S 1 ■ - ' P 3 c - l 3 SGS-THOMSON s 6 s' thomson ^ 7 # M M i d ü ( g ¥ ^ ! 0(g§ B U Z353 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ353 Vqss 500 V ^DSton) 0.6 ß 9.5 A • HIGH SPEED SWITCHING • HIGH VOLTAGE - 500V FOR OFF-LINE SMPS

Contextual Info: BDE D Æ 7 B 7^2^237 002^723 S C S -T H O M S O N S • 'T -3 P I-W - 6 S T H 0 flS 0 N A 7 f ß * [ i § » i ( g r a i D S BUZ74A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ74A VDSS 500 V ^DS(on 4 Q Id 2 A • HIGH VOLTAGE - FOR OFF-LINE SMPS

BUZ45

Abstract: IC LA 4127 la 4127
Contextual Info: BUZ45 33 HARRIS N-Channel Enhancem ent-M ode Power Fìeld-E ffect Transistor August 1991 Features Package T0-204AA BOTTOM VIEW • 9 .6A , 5 0 0 V • rDS on = 0 -6 fl SOURCE • S O A is P o w e r-D is sip a tio n Lim ited _ . DRAIN /(FLA N G E) • N a n o s e c o n d S w itch in g S p e e d s

NTC 220-11

Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
Contextual Info: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,

transistor 5cw

Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000