TRANSISTOR C 369 Search Results

BC369

Abstract: TRANSISTOR bH Silicon Epitaxial Planar Transistor philips
Contextual Info: I 1 N AUER P H I L I P S / D I S C R E T E L I E J> ^53*331 D027S43 152 H A P X BC369 I SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic TO -92 envelope, intended for low-voltage, high-current LF applications. BC 368/B C 369 is the matched complementary pair suitable for class-B output stages up to 3 W.

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

TRANSISTOR C 369

Abstract: transistor cb 369 transistor BC 368 TRANSISTOR bC 369 BC368 BC369 2586 TRANSISTOR 2586
Contextual Info: BC 368 Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: Kom plem entäre NF-Treiber- und Endstufen m it n ie driger Betriebsspannung. Kom plem entärtype zu BC 369 Applications: C om plem entary audio amplifier, d river and o utput stages fo r lo w su p p ly voltage.

K 3699 transistor

Abstract: BLY88A 3699 npn pscw
Contextual Info: N AMER PHILIPS/DISCRETE 86D 01894 D ObE D • y ^53^31 00mi32 T j J BLY88A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is

TS16949

Abstract: ZXTN04120HFF ZXTN04120HFFTA ZXTP05120HFF darlington complementary 120v
Contextual Info: ZXTN04120HFF 120V, SOT23F, NPN medium power Darlington transistor Summary BVCEO > 120V IC cont = 1A VCE(sat) < 1.5V @ 1A PD = 1.5W Complementary part number ZXTP05120HFF Description C This high performance NPN Darlington transistor is housed in the small outline SOT23 flat package for applications where

transistor J11

Abstract: PH3135-65M J11 transistor radar 77 ghz
Contextual Info: Radar Pulsed Power Transistor, 65 Watts, 3.10-3.50 GHz, 100 µs Pulse, 10% Duty 8/9/02 PH3135-65M Rev. 1 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

BF579

Contextual Info: N AMER P H I L I P S / D I S C R E T E OhE D • ^^53=131 0015750 T ■ BF579 SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature envelope primarily intended for u.h.f. applications in thick and

IC IL 1117

Abstract: CSA940 CSC2073
Contextual Info: CSA940, CSC2073 CSA940 CSC2073 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Power Amplifier Applications and Vertical Output Applications DIM A B C E F G H J K L M N MIN MAX 16.51 10.67 4.83 0.90 1,15 1,40 3.75 3,88 2,29 2.79 2,54 3.43 0,56 12.70 14.73

RZ1214B125Y

Contextual Info: N AMER PHILIPS/DISCRETE ObE D WË bbSBTBl 001SES3 7 • RZ1214B125Y Â T- - 2 3 - ¡S' PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon microwave power transistor for use in a common-base, class-C wideband amplifier and operating under pulsed conditions in L-band radar applications.

Contextual Info: N AMER PHILIPS/DISCRETE 86D 0 1 8 9 4 ObE D • bb53T31 0 0 m i 3 2 f^ 3 Y -6 1 ’~ D BLY88A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,5 V . The transistor is resistance stabilized and is

transistor bc 144

Abstract: TRANSISTOR
Contextual Info: SIEMENS NPN Silicon AF Transistor • • • • BC 368 High current gain High collector current Low collector-emitter saturation voltage Complementary type: BC 369 PNP Type Marking Ordering Code BC 368 - C62702-C747 PinCoinfigurat ion 1 2 3 E C Package1)

2SD369

Abstract: IC 200 UDR 005 2SD369-Y 100W AUDIO ic AMPLIFIER 251C 2SD369-0 Sink15 2SD369O
Contextual Info: 2SD SILICON NPN DIFFUSED JUNCTION TRANSISTOR I il I f ffl o ±n,t> * 4 o D C - D C V >'< - * m o INDUSTRIAL APPLICATIONS Unit in m m - * m A u dio 369 Itower A m p l i f i e r , Power S w i t c h i n g DC-DC C o n v e r t e r and R e g u l a t o r A p p l i c a t i o n s .

BFG134

Abstract: bt 1690 transistor transistor bt 1630 resistor 2322 194 philips bt 1690 philips 2222 372 DD313 752 J 1600 V CAPACITOR LC 3524 2222 379
Contextual Info: P hilip ^em icon d u cto r^^ ^ b t iS B 'ìB l 0031315 16D • A P X ^^P ro du c^p eo lficatio n NPN 7 GHz wideband transistor BFG134 N AHER PHILIPS/DISCRETE b^E D PINNING DESCRIPTION NPN planar epitaxial transistor in a 4-tead double-emitter plastic SOT103 envelope, intended for

Contextual Info: N AMER PHILIPS/DISCRETE OhE D bbS3T31 Q01S7SD T T'3i’ i r SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature envelope primarily intended for u.h.f. applications in thick and thin-film circuits. Q U IC K R E F E R E N C E D A T A ~ v CBO max.

transistor BC 368

Abstract: TRANSISTOR BC 368 marking IC 368 TRANSISTOR bC 369 C62702-C747 BC368 bc 369 pnp silicon transistor
Contextual Info: NPN Silicon AF Transistor BC 368 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary type: BC 369 PNP ● 2 3 1 Type Marking Ordering Code BC 368 – C62702-C747 Pin Configuration 1 2 3 E C Package1)

TRANSISTOR C 369

Abstract: TRANSISTOR bC 369 bc 369 pnp silicon transistor TRANSISTOR BC TRANSISTOR bC 369.remplacent C62702-C748 BC 369 90 156 369 transistor BC 368 bc369
Contextual Info: PNP Silicon AF Transistor BC 369 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary type: BC 368 NPN ● 2 3 1 Type Marking Ordering Code BC 369 – C62702-C748 Pin Configuration 1 2 3 E C Package1)

TRANSISTOR C 369

Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5060 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN T O -3P • High Collector-B ase Voltage (V c b o = 1 5 0 0 V ) • High Sp eed Sw itching (tf. max=0.4^S) ABSOLUTE MAXIMUM RATINGS C h aracteristic

BUR50

Abstract: Jedec TO-3 metal case
Contextual Info: r z 7 S C S -T H O M S O N ^ 7 # M M S iL I O T O K S BUR50 BU R 5 0 S HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTOR DESCRIPTION The BUR50 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, the BU R50S is the same type in Jedec TO-3 metal case,

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from

Contextual Info: TN3467A TN3467A C B TO-226 E PNP Switching Transistor This device is designed for high speed saturated switching applications at currents to 800 mA. Sourced from Process 70. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value

2SC 968 NPN Transistor

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from

Contextual Info: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA byBUD44D2/D BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C o llecto r-E m itter Diode and B uilt-in Efficient

Contextual Info: MOTOROLA O rder this docum ent by BUD44D2/D SEMICONDUCTOR TECHNICAL DATA BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C o llecto r-E m itter Diode and B uilt-in Efficient

1nS pulse width circuit

Abstract: MPS2369A High speed switching Transistor
Contextual Info: MPS2369A t1 270Ω 3V MPS2369A ISSUE 2 – MARCH 94 FEATURES * 40 Volt VCEO * Very fast switching tON CIRCUIT +10.6V NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR C B 3K3Ω CS < 4pF * -1.5V < 1ns Pulse width t1 =300ns Duty cycle = 2% tOFF CIRCUIT t1