TRANSISTOR C 369 Search Results

TRANSISTOR C 369

Abstract: transistor cb 369 transistor BC 368 TRANSISTOR bC 369 BC368 BC369 2586 TRANSISTOR 2586
Contextual Info: BC 368 Silizium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Planar Transistor Anwendungen: Kom plem entäre NF-Treiber- und Endstufen m it n ie driger Betriebsspannung. Kom plem entärtype zu BC 369 Applications: C om plem entary audio amplifier, d river and o utput stages fo r lo w su p p ly voltage.

transistor J11

Abstract: PH3135-65M J11 transistor radar 77 ghz
Contextual Info: Radar Pulsed Power Transistor, 65 Watts, 3.10-3.50 GHz, 100 µs Pulse, 10% Duty 8/9/02 PH3135-65M Rev. 1 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

IC IL 1117

Abstract: CSA940 CSC2073
Contextual Info: CSA940, CSC2073 CSA940 CSC2073 PNP PLASTIC POWER TRANSISTOR NPN PLASTIC POWER TRANSISTOR Power Amplifier Applications and Vertical Output Applications DIM A B C E F G H J K L M N MIN MAX 16.51 10.67 4.83 0.90 1,15 1,40 3.75 3,88 2,29 2.79 2,54 3.43 0,56 12.70 14.73

Contextual Info: N AMER PHILIPS/DISCRETE 86D 0 1 8 9 4 ObE D • bb53T31 0 0 m i 3 2 f^ 3 Y -6 1 ’~ D BLY88A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,5 V . The transistor is resistance stabilized and is

2SD369

Abstract: IC 200 UDR 005 2SD369-Y 100W AUDIO ic AMPLIFIER 251C 2SD369-0 Sink15 2SD369O
Contextual Info: 2SD SILICON NPN DIFFUSED JUNCTION TRANSISTOR I il I f ffl o ±n,t> * 4 o D C - D C V >'< - * m o INDUSTRIAL APPLICATIONS Unit in m m - * m A u dio 369 Itower A m p l i f i e r , Power S w i t c h i n g DC-DC C o n v e r t e r and R e g u l a t o r A p p l i c a t i o n s .

Contextual Info: N AMER PHILIPS/DISCRETE OhE D bbS3T31 Q01S7SD T T'3i’ i r SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature envelope primarily intended for u.h.f. applications in thick and thin-film circuits. Q U IC K R E F E R E N C E D A T A ~ v CBO max.

transistor BC 368

Abstract: TRANSISTOR BC 368 marking IC 368 TRANSISTOR bC 369 C62702-C747 BC368 bc 369 pnp silicon transistor
Contextual Info: NPN Silicon AF Transistor BC 368 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary type: BC 369 PNP ● 2 3 1 Type Marking Ordering Code BC 368 – C62702-C747 Pin Configuration 1 2 3 E C Package1)

TRANSISTOR C 369

Abstract: TRANSISTOR bC 369 bc 369 pnp silicon transistor TRANSISTOR BC TRANSISTOR bC 369.remplacent C62702-C748 BC 369 90 156 369 transistor BC 368 bc369
Contextual Info: PNP Silicon AF Transistor BC 369 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary type: BC 368 NPN ● 2 3 1 Type Marking Ordering Code BC 369 – C62702-C748 Pin Configuration 1 2 3 E C Package1)

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from

2SC 968 NPN Transistor

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from

Contextual Info: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA byBUD44D2/D BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C o llecto r-E m itter Diode and B uilt-in Efficient

702 TRANSISTOR

Abstract: HA 12058 706 TRANSISTOR sot-23 540 w 03 oj 3E-015 0 261 S04 663
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDW IDTH PRO DU CT: fT = 10 GHz • LOW NOISE FIG URE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIG H ASSO C IA TED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VO LTAG E LOW C U R R EN T PERFO RM AN CE

Contextual Info: PN2369A / MMBT2369A / MMPQ2369 D iscrete P O W E R & S ig n a l T e c h n o lo g ie s National Semiconductor PN2369A MMBT2369A SOT-23 MMPQ2369 B SOIC-16 Mark: 1S NPN Switching Transistor This device is designed for high speed saturation switching at collector

T17 TRANSISTOR

Abstract: BC869-10 marking code my sot 89 MY sot-89 BC869 BC869-16 BC869-25 IEC134 cec PNP transistor bc869 TRANSISTOR
Contextual Info: 711002b DDbfl4Sf l TT? • P H IN BC869 SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P tra n sisto r in a plastic m icro m in ia tu re envelope, intended fo r low-voltage, h ig h-current l.f. applications. B C 868/B C 869 is th e m atched co m p le m e n ta ry p a ir suitable fo r class-B audio o u tp u t

2N3721

Abstract: TRANSISTOR C 369 general electric
Contextual Info: Silicon Transistor T he G en eral E lectric 2N 3721 is a N P N silicon tra n s is to r in te n d ed fo r g en eral p u rp o se a p p lica tio n s. T h e p la n a r p assiv ated c o n s tru c tio n assu res ex cellen t device stab ility an d life. T his high p e rfo rm a n c e , hig h valu e device is m a d e p o ssib le by

2SC3011

Contextual Info: 2SC3011 TOSHIBA 2SC3011 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm U H F-C BAND LO W NOISE AM PLIFIER APPLICATIONS. High Gain Low Noise Figure High fp |S2lel2= 12dB Typ. NF = 2.3dB (Typ.), f=lG H z fT = 6.5GHz 2 .5 + — 0 .5 0 .3 M A X IM U M RATINGS (Ta = 25°C)

2SC398

Abstract: 2SC399 IC c399 TB9.C c3982 VAAC
Contextual Info: 25C398 2 s c 399 O fn ; vhp t ^ z;'J3yNPNI.£5>*^J> l7ls-t]&^yVZ5> SILICON NPN EPITAXIAL PLANAR TRANSISTOR ffl R FifiWffl ; 8SC398 2SC3 99 Unit in mm -ê- ffl; 2 Í& 8 M A X . o TV V H F Tuner A p p l ications RF Amplifier M ixer • M m m r - r 0 4 .9 5 M A X .

Contextual Info: 7 = 12 1 53 7 □ 0 4 5 f l b cï b? S • S 6 T H STH4N90 STH4N90FI SGS-THOMSON ilLI gTO*S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TY P E V dss RDS(on Id a . . ■ . . . . 900 V 900 V a CM CM CO CO V V STH4N90 STH4N90FI 4.2 A 2.7 A TYPICAL RDS(on) = 2.9 i l

Contextual Info: N AMER P H I L I P S / D I S CR E T E DhE D m bt,53T31 □015323 7 • RZ1214B125Y r -3 3 - P U L S E D M IC R O W A V E P O W E R T R A N S IS T O R N-P-N silicon microwave power transistor for use in a common-base, class-C wideband amplifier and operating under pulsed conditions in L-band radar applications.

lt 5217

Abstract: ic op 5218 IP626 T1P62 T1P620
Contextual Info: TEXAS INSTR ÎOPTOJ 8961726 TEXAS IN STR 62C <OPTO> 36958 TIP620, TIP621, TIP622 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D r R EV ISED O CTOBER 1984 • Designed For Complementary use with TIP625, T IP626, TIP627 • 65 W at 2 5 ° C Case Temperature

TIP626

Contextual Info: TEXAS INSTR ~b2 - COPTO} 8961726 TEXAS . ' «_•. : ' INSTR dF | ÖTblTEb D 0 3 b c]b4 ß 62C <OPTO 36964 " TIP625, TIP626, TIP627 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 Designed For Complementary Use With TIP620, TIP621, TIP622

2N3441

Abstract: 2N3441 JANTX
Contextual Info: TECHNICAL DATA 2N3441 JANTX MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/369 NPN POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current

bc 369 pnp silicon transistor

Abstract: TRANSISTOR bC 369 transistor BC 55 TRANSISTOR C 369 BC 369 transistor BC 368
Contextual Info: 4M > BC 369 'W Silizium-PNP-Epitaxial-Planar-Transistor Silicon PNP Epitaxial Planar Transistor Anwendungen: Kom plem entäre NF-Treiber- und Endstufen m it n iedriger Betriebsspannung. Kom plem entärtype zu BC 368 Applications: Com plem entary audio amplifier, driver and output stages fo r low supply voltage.

T1P132

Abstract: TIP135 texas tip 132 *P131 opto
Contextual Info: TE X A S I N S T R -COPTO} 8961726 TEXAS bä INST R DE § flit,17 2b OPTO 62C □ □ 3 b *=]□b 36906 TIPI 30, TIPI 31, TIPI 32 N-P-N DARLINGTON SILICON POWER TRANSISTORS R EV ISED O CTOBER 1984 • Designed For Complementary Use With TIP135, TIP136, TIP137