TRANSISTOR BW Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

Contextual Info: LS3250SC NPN TRANSISTOR Linear Systems NPN Transistor The LS3250SC is a NPN transistor mounted in a single TO-92 package. The 3 Pin TO-92 provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. See Packaging Information .

Contextual Info: LS3250SB NPN TRANSISTOR Linear Systems NPN Transistor The LS3250SB is a NPN transistor mounted in a single TO-92 package. The 3 Pin TO-92 provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. See Packaging Information .

Contextual Info: LS3250SB NPN TRANSISTOR Linear Systems NPN Transistor The LS3250SB is a NPN transistor mounted in a single SOT-23 package. The 3 Pin SOT-23 provides ease of manufacturing, and a lower cost assembly option. See Packaging Information . LS3250SB Features: ƒ

Contextual Info: LS3550SB PNP TRANSISTOR Linear Systems PNP Transistor The LS3550SB is a PNP transistor mounted in a SOT23 package. The SOT-23 provides ease of manufacturing. See Packaging Information . LS3550SB Features: ƒ Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

BARE die

Contextual Info: LS3550SA PNP TRANSISTOR Linear Systems PNP Transistor The LS3550SA is a PNP transistor mounted in a SOT23 package. The SOT-23 provides ease of manufacturing. See Packaging Information . LS3550SA Features: ƒ Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

Contextual Info: LS3550SC PNP TRANSISTOR Linear Systems PNP Transistor The LS3550SC is a PNP transistor mounted in a TO-92 package. The TO-92 provides ease of manufacturing. See Packaging Information . LS3550SC Features: ƒ Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

Contextual Info: LS3550SB PNP TRANSISTOR Linear Systems PNP Transistor The LS3550SB is a PNP transistor mounted in a TO-92 package. The TO-92 provides ease of manufacturing. See Packaging Information . LS3550SB Features: ƒ Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

QF20AA60

Abstract: DIODE BZ QF20AA40
Contextual Info: TRANSISTOR MODULE（THREE PHASES BRIDGE TYPE） QF20AA40/60 QF20AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuraction. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from

qf30aa60

Abstract: QF30AA40 IC 7403
Contextual Info: TRANSISTOR MODULE（THREE PHASES BRIDGE TYPE） QF30AA40/60 QF30AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuraction. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from

IC 7403

Abstract: QF50AA40 QF50AA60 transistor bw 51
Contextual Info: TRANSISTOR MODULE（THREE PHASES BRIDGE TYPE） QF50AA40/60 QF50AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuration. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from

QF15AA60

Abstract: QF15AA40 s50ms IC15AV
Contextual Info: TRANSISTOR MODULE（THREE PHASES BRIDGE TYPE） QF15AA40/60 QF15AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuraction. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from

Contextual Info: LS3250SA NPN TRANSISTOR Linear Systems NPN Transistor The LS3250SA is a NPN transistor mounted in a single SOT-23 package. The 3 Pin SOT-23 provides ease of manufacturing. See Packaging Information . LS3250SA Features: ƒ Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

Contextual Info: LS3250SA NPN TRANSISTOR Linear Systems NPN Transistor The LS3250SA is a NPN transistor mounted in a single TO-92 package. The 3 Pin TO-92 provides ease of manufacturing. See Packaging Information . LS3250SA Features: ƒ Low Output Capacitance ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)

RO4350B

Abstract: CGH35030F CGH35030-TB 10UF 470PF
Contextual Info: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied

Contextual Info: CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied

PAR ofdm

Abstract: CGH27030 CGH27030F CGH27030-TB RO4350B 10UF 470PF str f 3626
Contextual Info: CGH27030F 30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for 2.32.9GHz WiMAX and BWA amplifier applications. The transistor is supplied

Contextual Info: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied

transistor 17556

Abstract: 17556 transistor TC 9147 10UF 470PF CGH27030F CGH27030-TB transistor 9047
Contextual Info: PRELIMINARY CGH27030F 30 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27030F ideal for 2.32.9GHz WiMAX and BWA amplifier applications. The transistor is supplied

Contextual Info: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied

STR 5709

Contextual Info: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied

str 6754

Abstract: ts 1640-1 str 6754 circuit STR W 6754 6819 cree rf 10UF 470PF CGH35030F CGH35030-TB
Contextual Info: PRELIMINARY CGH35030F 30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35030F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35030F ideal for 3.33.9GHz WiMAX and BWA amplifier applications. The transistor is supplied

Contextual Info: PRELIMINARY CGHV22200 200 W, 1800-2200 MHz, GaN HEMT for LTE Cree’s CGHV22200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV22200F ideal for 1.8 2.2 GHz LTE, 4G Telecom and BWA amplifier applications. The transistor is

Contextual Info: PRELIMINARY CGHV27200 200 W, 2500-2700 MHz, GaN HEMT for LTE Cree’s CGHV27200 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27200 ideal for 2.52.7 GHz LTE and BWA amplifier applications. The transistor is supplied in a