TRANSISTOR BW Search Results

BC858CDXV6T1

Abstract: BC858CDXV6T5
Contextual Info: BC858CDXV6T1, BC858CDXV6T5 Dual General Purpose Transistor PNP Dual http://onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low power surface mount applications. • Lead-Free Solder Plating

transistor c 933

Abstract: transistor j5 Transistor 933 13MM transistor c 144 572 transistor 933 TRANSISTOR 30 w RF POWER TRANSISTOR NPN
Contextual Info: an AMP comDanv Wireless Power Transistor, 33W 1805 - 1880 MHz PHl819-33 v2.01 I- Features l l l l l NPN Silicon Microwave Power Transistor Common Emitter Class AI3 Operation Internal Input and Output Impedance Matching Diffksed Emitter Ballasting Gold Metallization System

low noise transistor

Abstract: CMPT2484 C1u TRANSISTOR
Contextual Info: Central CMPT2484 TM Semiconductor Corp. NPN SILICON LOW NOISE TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2484 type is an NPN silicon low noise transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise amplifier applications.

Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet

ATC100B101JT500XT

Abstract: T491C105K050AT NIPPON CAPACITORS dvbt A114 A115 AN1955 C101 JESD22 MRFE6P3300HR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 0, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6P3300HR3 MRFE6P3300HR5 Designed for broadband commercial and industrial applications with

ua723c fairchild

Abstract: A723C A723M NPN 2N 2219 UA723C D1063
Contextual Info: UA723M, UA723C PRECISION VOLTAGE REGULATORS D1063, AUGUST 1972-REVISED OCTOBER 1988 • 150-mA Load Current Without External Power Transistor • Typically 0.0 2% Input Regulation and 0.0 3% Load Regulation uA723M • Adjustable Current Limiting Capability

TH 2190 HOT Transistor

Abstract: TH 2190 mosfet AGR21180EF JESD22-C101A
Contextual Info: Preliminary Data Sheet April 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband

2SK1913

Abstract: BTB 600 BR BTb 600
Contextual Info: TOSHIBA Discrete Semiconductors 2SK1913 Field Effect Transistor Unit in mm Silicon N Channel MOSType c-MOS III.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance " Rds(ON) = 0.9H (Typ.) • High Forward Transfer Admittance

IC 723 pin out diagram

Abstract: BC847 BC847BM3T5G M11F
Contextual Info: BC847BM3T5G Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−723 package which is designed for low power surface mount applications. • This is a Pb−Free Device

AGR09060GUM

Abstract: JESD22-C101A
Contextual Info: Preliminary Product Brief March 2004 AGR09060GUM 60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09060GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

GRM55DR61H106KA88B

Abstract: 2508051107Y0 NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRF6P23190HR6 J3001
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 2, 3/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

Contextual Info: BC846BM3T5G General Purpose Transistor NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model: >4000 V Machine Model: >400 V http://onsemi.com • This is a Pb−Free Device COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage

Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG3012NT1 Rev. 3, 3/2007 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3012NT1 Broadband High Linearity Amplifier The MMG3012NT1 is a General Purpose Amplifier that is internally input matched and internally output matched. It is designed for a broad

HCPL-2502-560E

Contextual Info: 6N135/6, HCNW135/6 HCPL-2502/0500/0501 Single Channel, High Speed Optocouplers Data Sheet Lead Pb Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product Description Features These diode-transistor opto­coup­lers use an insulating

A114B

Abstract: AGERE AGR26180E AGR26180EF AGR26180EU AGR26180XF AGR26180XU JESD22-C101A
Contextual Info: Preliminary Product Brief April 2004 AGR26180E 180 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26180E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications

TDK 2220

Abstract: 77C10 A113 A114 A115 AN1955 C101 JESD22 MRF5P21045NR1 mosfet j785
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5P21045N Rev. 0, 4/2007 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21045NR1 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. Dual path topology suitable for Doherty, quadrature, single - ended and

NC3010

Contextual Info: SMP11P20 CTSiiconix in c o r p o r a te d P-Channel Enhancement Mode Transistor TO-220AB TOP VIEW PRODUCT SUMMARY V BR DSS (V) r DS(ON) (ÎÎ) (A) •d -200 0.50 -1 1 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1

FS50R06YL4

Contextual Info: Technische Information / technical information IGBT-Module IGBT-Modules FS50R06YL4 vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage

FS300R12KE3

Contextual Info: Technische Information / technical information IGBT-Module IGBT-Modules FS300R12KE3 vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage

Contextual Info: pS mm Aperture Package Schematic Emitter Sensor DUAL CHANNEL SLOTTED T111N 1T Ll 'DI VDKTLT1 PITLi 'P K aC VW Ti lTl fvTlTl H21A3 Typ. T‘ o f f H21A2 Typ. W Ton <Tf * Ip = 5mA Ip = 20mA Ip = 30mA v cc = 5V, \ K)R= Ip = 1mA Ip = 30mA Ip = 1mA Ip = 30mA 60

EUPEC BSM35GP120

Abstract: BSM35GP120 BSM35GP120 diagram BSM35
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GP120 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung

BSM100GP60

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM100GP60 Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung

FP10R12KE3

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules FP10R12KE3 Vorläufig Preliminary Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung

type j thermocouple

Abstract: design the 4-20mA transmitter for a thermistor using XTR
Contextual Info: XTR101 SBOS146A − OCTOBER 1986 − REVISED AUGUST 2004 Precision, Low Drift 4-20mA TWO-WIRE TRANSMITTER FEATURES D INSTRUMENTATION AMPLIFIER INPUT: − Low Offset Voltage, 30µV max − Low Voltage Drift, 0.75µV/°C max − Low Nonlinearity, 0.01% max D TRUE TWO-WIRE OPERATION: