TRANSISTOR BR A 94 Search Results

2SD596

Contextual Info: RECTRON 2SD596 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.7 A * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range

2SC2412

Abstract: 100MHZ marking BS SOT-23
Contextual Info: RECTRON 2SC2412 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.2 W(Tamb=25OC) * Collector current ICM : 0.15 A * Collector-base voltage V(BR)CBO : 60 V * Operating and storage junction temperature range

100MHZ

Abstract: BCW68H
Contextual Info: RECTRON BCW68H SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.33 W(Tamb=25OC) * Collector current ICM : -0.8 A * Collector-base voltage V(BR)CBO : -60 V * Operating and storage junction temperature range

C945

Abstract: BR c945 transistor transistor npn c945 c945 transistor position of emitter of c945 NPN C945 C945 NPN transistor c945 C945 plastic C945 IC
Contextual Info: C945 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.2 * Collector current ICM : 0.15 * Collector-base voltage V(BR)CBO : 60 * Operating and storage junction TJ,Tstg: -55OC to +150OC W (Tamb=25OC) A V temperature range SOT-23

BCX19

Contextual Info: BCX19 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.225 W (Tamb=25OC) * Collector current ICM : 0.5 A * Collector-base voltage V(BR)CBO : 50 V * Operating and storage junction temperature range O O TJ,Tstg: -55 C to +150 C

Contextual Info: Tem ic 2N7086 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) (Q ) I d (A) 200 0.16 14 TO-257AB H erm etic P ackage O r O — It J |i Case Isolated s G D S Top View

2N4403 noise figure

Contextual Info: 2N4403 TO - 92 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES min. 0.49 (12.5) 0.18 (4.6) MECHANICAL DATA * * * * * 0.14 (3.6) 0.18 (4.6) * Power dissipation O PCM: 0.6 W(Tamb=25 C) * Collector current ICM: - 0.6 A * Collector-base voltage V(BR)CBO: - 40 V * Operating and storage junction temperature range

SUP60N06-08

Abstract: SUP60N06
Contextual Info: Tem ic sii.conix_ SUP60N06-08 N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) rDS(on) ( ß ) I d (A) 60 0.008 60 TO-220AB o J t DRAIN connected to TAB G D S Top View N-Channel MOSFET

transistor mosfet irf9530

Abstract: IRF9530 transistor irf9530
Contextual Info: Tem ic IRF9530 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) ( ß ) I d (A) -1 0 0 0.30 -1 2 TO-220AB “ Ö " Top View P-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted) Parameter Symbol

IRF520 SEC mosfet

Contextual Info: Tem ic Siliconix_IRF520 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) (£2) ID (A ) 100 0.3 8.0 TO-22QAB o <J5 DRAIN connected to TAB Ô s G D S Top View N-Channel MOSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)

2N7076

Contextual Info: Tem ic 2N7076 Siliconix N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) ( ß ) I d (A) 200 0.10 28 TO-254AA H erm etic P ackage O Case Isolated DSC, Top View N-Channel MOSFE'I' Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

Contextual Info: Tem ic 2N7089 P-Channel Enhancement-Mode Transistor Product Summaiy V BR DSS (V) r DS(on) (Ö ) I d (A) -1 0 0 0.30 -1 0 TO-257AB Herm etic Package O " l! C ase Isolated G D S P-Channel M O S F E T Top View

SMW60N06-18

Abstract: smw60n06
Contextual Info: Tem ic SMW60N06-18 Siliconix N-Channel Enhancement-Mode Transistor, 18-mQ rDS on Product Summary V(BR)DSS (V ) r DS(on) ( Q ) ID (A) 60 0.018 60 TO-247AD Ô s N-Channel M OSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted) Symbol Limit Drain-Source Voltage

sd 6109

Abstract: IC SD 6109
Contextual Info: T e m ic SMP40N10 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (£2) I d (A) 100 0.040 40 TO-220AB o •Jt D R A IN c o n n ected to TAB G D S Top View N -C h an n el M O S F E T

b0725

Contextual Info: Tem ic VQ2004J Siliconix P-Channel Enhancement-Mode MOS Transistor Product Summary V BR DSS M in (V) *DS(on) M a x (Q ) V GS(th) (V) I d (A) -6 0 5 @ V g s = -10 V - 2 to - 4 .5 -0 .4 1 Features Benefits Applications • • • • • • • • • •

2n6851

Contextual Info: Tem ic 2N6851 S ilic o n ix P-Channel Enhancement-Mode Transistor Product Summary V br Dss (V) r DS(on) ( ß ) I d (A) -200 0.80 -4 .0 ; Parametric limits in accordance with M1L-S-I9500i564 where applicable. T0-205A F (TO-39) - O— i} IÏ Ô D P-Channel MOSFET

Contextual Info: Tem ic 2N6851 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) -200 TDS(on) (ß ) 0.80 I d (A) -4.0 Parametric limits in accordance with M1L-S-19500I564 where applicable. T 0-205A F (TO-39) Ô D P-Channel MOSFF.T Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)

SMW45N10

Abstract: 37392 A2631 NS6040
Contextual Info: Tem ic SMW45N10 Siliconix N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) ( ß ) I d {A) 100 0.040 45 T O -247AD I o G D S N -C h an n el M O S F E T Top View Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted) Parameter

SMW20P10

Abstract: sm 6136 b NS8060 4560D
Contextual Info: Temic SMW20P10 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) ( ß ) I d (A) -1 0 0 0.20 -2 0 TO-247AD G D S l o p View P-C hannel M O S F E T Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted) Sym bol L im it

Contextual Info: Tem ic SMD10P06 Siliconix P-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) r DS(on) (Q ) IDa (A) -6 0 0.28 -1 0 S Q DPAK (TO-252) D n°n G S Ô D Top View P-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

SUB60N06-14

Abstract: p60n
Contextual Info: Tem ic SUP/SUB60N06-14 Siliconix N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) Id r DS(on) (S2) 60 0.014 (A) 603 D T 0-220A B O o T O -263 o D R A IN con n ected to TA B G D S Top View G D S SU B60N 06-14

2N7080

Contextual Info: Tem ic 2N7080 Siliconix P-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) ( ß ) I d (A) -2 0 0 0.500 - 9 .5 T O -2 5 4 A A S H erm etic Package 9 O C ase Isolated O u uu D D S G Top View P-C hannel M O S F E T Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

Contextual Info: T e m ic SMD15N06 Siliconix N-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) r DS(on) (Q ) 60 0.10 lDa (A) 15 D Q DPAK (T O -252) D •<-¿3 n°n G S Ô s Top View N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

SMP40P06

Contextual Info: Tem ic SMP40P06 Siliconix P-Channel Enhancement-Mode Transistor 175 °C Maximum Junction Temperature Product Summary V BR DSS (V) -6 0 rDS(on) (£2) 0.045 I d (A) -4 0 S TO-220AB 9 o DRAIN connected to TAB U U U ^ GD S D Top View P-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)