TRANSISTOR BR 5 N 60 Search Results

n 6113 transistor

Abstract: c 6113 transistor
Contextual Info: A153S& VQ2004 SERIES P-Channel Enhancement-Mode _ MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY PART NUMBER V BR DSS (V) r DS(ON) (n ) (A) PACKAGE VQ2004 -60 5 -0.41 All VQ2006 -90 5 -0.41 All Performance Curves: VPDV10 •d

B0815

Abstract: vp2410
Contextual Info: Temic P-Channel Enhancement-Mode MOS Transistor Product Summary Part Number V BR DSS VP2410L Mín (V) -240 rn s^ n ) Max (Q) (V) Id (A) -0 .8 to -2 .5 -0.18 VGS(th) 10 @ VGS = -4 .5 V Features Benefits

Contextual Info: VN0605T N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY .B'SSSSSfe TOP VIEW SOT-23 V BR|DSS •d (A ri r ID 2 iC 60 5 0.18 H 3 1 DRAIN 2 SOURCE 3 GATE Performance Curves: VNDS06 n PRODUCT MARKING VN0605T V02 I ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

Contextual Info: N APIER PHILIPS/DISCRETE bR E D bbS3R31 QD3042R 4bR • APX Product Specification Philips Semiconductors BUK106-50US BUK106-50LP/SP PowerMOS transistor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic

Contextual Info: B fS S ffA 2N7000 N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY TO-92 TO-226AA BOTTOM VIEW Id (A) V (BR)DSS (V) 60 5 0.2 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VNDS06 3 1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted) SYMBOL

150X1

Contextual Info: 2N7002 N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY SOT-23 V BR DSS (V) r DS(ON) ( il) (A) 60 7 .5 0 .1 1 5 TOP VIEW •d ID 2 HU 10 3 1 DRAIN 2 SOURCE 3 GATE Performance Curves: VNDS06 PRODUCT MARKING 2N7002 702 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)

smd15n06

Abstract: 1D TRANSISTOR SMD15N 46849
Contextual Info: Temic SMD15N06 Semiconductors N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) r DS(on) (Œ) V (A ) 60 0.10 @ Vos = 10 v 15 T O -2 5 2 O TT Drain Connected to Tab G D S Top View O s Order Number: SMD15N06 N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

2N7001

Abstract: t0 SOT23-3
Contextual Info: SILICONIX lflE D INC • Ö554735 0 0 1 4 0 2 5 Siliconix 2N7001_ in c o rp o ra te d N-Channel Enhancem ent-M ode M OS Transistor . ' p S 5 _' ^ 5 ' SOT-23 PRODUCT SUMMARY V BR DSS (V) fDS(ON) (U ) <D (A) PACKAGE 240 45 0.045 SOT-23 4 ■ ”

lc 945 p transistor NPN TO 92

Abstract: 945 TRANSISTOR lc 945 p transistor C 945 Transistor lc 945 p transistor NPN transistor c945 TRANSISTOR c945 p BR c945 C945 c945 TRANSISTOR
Contextual Info: M C C TO-92 P la stic-E n ca p su la te T ra n sisto rs C 945 TRANSISTOR NPN F EAT URES P cm: 0.4W (Tamb=25°C) current: IcM: 0 .1 5 A CoRector-base voltage V(BR)CBO: 60 V IQ f t ë i^ Î% a n d storage junction temperature range -55°C to + 150”C T j.T s tg :

Contextual Info: Tem ic VQ3001J/3001P Siliconix N-/P-Channel Enhancement-Mode MOS Transistor Arrays Product Summary V BR DSS Mín (V) r DS(on) Max (Q) VGS(th) (V) Id (A) N-Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Channel -3 0 2 @ V Gs = - 1 2 V - 2 to -4 .5 -0 .6 Features

Contextual Info: VN10KC New Product Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistor PRODUCT SUMMARY V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 5 @ VGS = 10 V 0.8 to 2.5 0.31 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

g2jf

Contextual Info: SILICONIX INC 18E D • fl5S4735 QQ14147 7 ■ VQ7254 SERIES .fiTSSgSCSS ' j I- UfZ. - 7 . ^ 5 1 1—^ ^ N- and P-Channel Enhancement-Mode M O S Transistor Arrays 14-PIN DIP SIDE BRAZE PRODUCT SUMMARY PART NUMBER V BR DSS (V) rDS(ON) Ql + Q2 or Q3 + Q4 TOP VIEW

2N7078

Contextual Info: C fSiniB conix corp orated 2N7078 N-Channel Enhancement Mode Transistor T O -2 5 4 A A Herm etic P a cka g e TOP v ie w PRODUCT SUMMARY V BR DSS rDS(ON) (V) <n) Id (A) 500 0.40 13 2 3 SOURCE GATE C a s e Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

C2926

Abstract: TRANSISTOR S 813 BUK105-50L BUK105-50S d550s
Contextual Info: N AMER P H I L I P S / D I S C R E T E bR E ^53^31 D 0030410 PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a general purpose switch for automotive

SMW60N10

Contextual Info: SMW60N10 CX'SiEconix in c o r p o r a t e d N-Channel Enhancement Mode Transistor TO-247 AD T O P VIEW PRODUCT SUMMARY V BR DSS (V) r DS(ON) (il) (A) •d 100 0 .0 2 5 60 u 1 GATE 2 DRAIN 3 SOURCE 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

2N7008

Contextual Info: 1ÔE D S I L I C O N I X INC A2SM735 0 0 m ü 3 1 T fX S ilic o n ix 2N7008 J .Æ in c o rp o ra te d T -Z 7 -Z 5 N-Channel Enhancem ent-M ode IV10S Transistor PRODUCT SUMMARY V BR DSS (V) fDS(ON) (ÍX ) Id (A) PACKAGE .60. 7,5 0.15 TO-92 2 GATE 3 DRAIN Performance Curves: VNDS06 (See Section 7)

11105 IC

Contextual Info: Tem ic VP2410L S e m i c o n d u c t o r s P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) IDS«,) Max (Q) V GS<lh) (V) I d (A) -2 4 0 10 @ V o s = - 4 .5 V -0 .8 t o -2 .5 -0 .1 8 Features Benefits Applications • • •

2120 transistor

Abstract: 2SC2120
Contextual Info: M C C TO-92 Plastic-En capsulate tra n sisto rs 2SC 2120 TRANSISTOR NPN FEATURES Pcm: Ic m ; 0.6W (Tam b=25C) 0.8 A voltage V(BR)CBO: 3 5 V temperature range Tstg: -55”C to + 150°C Tj: ELECTRICAL 1 50°C CHARACTERI STI CS (Tamb=25°C u n l e s s o t h e r w is e

2N5157

Contextual Info: TYPE 2N5157 N-P-N SILICON POWER TRANSISTOR • 100 W at 75° C Case Temperature • 700 V Collector-Emitter Off-State Voltage • Min V BR CEO of 400 V • Max t0ff of 1.7 /is at lc = 1 A • Typ VcE(sat) of 0.3 V at lc = 3.5 A • Typ f r of 5 MHz at 12 V , 0.2 A

EL125

Abstract: BUZ10
Contextual Info: SILICONIX INC 1ÖE D J I1 5 S 6 • Ô254735 0014501 1 ■ BUZ10 T-31-U N-Channel Enhancement Mode Transistor TO-22QAB TOP VIEW o PRODUCT SUMMARY V BR|DSS Id (A 50 Q.08 20 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

TP0202T

Abstract: Oj26
Contextual Info: TP0202T T e MIC Se mi c o n d u c t o r s P-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) Max ( Q ) V GS U h )(V ) I d (A) 1 .4 @ V g s = - 1 0 V -1 .3 to - 3 V -0.41 3.5 @ V Gs = ”4-5 V - 1 .3 1 0 - 3 V -0 .2 7 ro s(o n ) -2 0

vixs

Contextual Info: Tem ic 2N7078 Siliconix N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V ) r DS(on) ( Q ) I d (A) 500 0 .4 0 13 D O T O -2 5 4 A A H e rm e tic P a c k a g e O C’-ase Isolated D S G l o p View N-Channel M O SFFT Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

2N7090

Contextual Info: C T S ilico n ix ^ U r 2N7090 in c o r p o r a te d P-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY V BR DSS -2 0 0 •d r DS(ON) (H ) (A) 0 .8 0 -5 .7 1 GATE 2 DRAIN 3 SOURCE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1

BR6000

Abstract: B44066R6012E230 br6000 r12 epcos EPCOS br6000 B44066-R6012-E230 lcd 2 x 16 B44066R6012 EPCOS 230 11 O SWITCHING TRANSISTOR 144 B44066R6006E230
Contextual Info: The Power Factor Controller BR 6000 User-friendly and Intelligent Controller with Multi-functional Display Product Profile 2002 http://www.epcos.com EPCOS BR 6000 PFC Controller Innovative and intelligent concept • Mega user-friendly handling procedures