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NE87112 Datasheets (1)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NE87112		Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	117.1KB	1

NE87112 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
1222L Abstract: NE871 ne87112 Contextual Info: NPN SILICON MICROWAVE TRAN SISTO R NE87112 FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fr = 2 GHz • LOW N O ISE FIGURE: N F = 1.5 dB at 70 MHz • HIGH BR EAK D O W N VOLTAGE: V cbo = 4 5 V DESCRIPTION The NE87112 N PN Silicon Transistor is designed for low-noise	OCR Scan	ne87112 -25-c 2sci260 -1222l +21222l ne871	PDF
SVI 3104 c Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or	OCR Scan	an83301-1 ne24615 an83302 an83303-1 +16ne71083 ne70083 an83901 an85301 11/86-ln an86104 svi 3104 c upc1678g ne333 stb 1277 transistor equivalent transistor bf 175 ne85635 packaging schematic ne72000 vc svi 3104 ne9000 ne720	PDF
73412 Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318 Contextual Info: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7	OCR Scan	ne46134 ne85634 ne46734 ne85619 +11ne68119 73412 ne64535 chip transistor 348 fvh 38 p08c ne68039 ne889 ne02135 ne64500 ne24318	PDF

Catalog Datasheet

Type

Document Tags

PDF

1222L

Abstract: NE871 ne87112
Contextual Info: NPN SILICON MICROWAVE TRAN SISTO R NE87112 FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fr = 2 GHz • LOW N O ISE FIGURE: N F = 1.5 dB at 70 MHz • HIGH BR EAK D O W N VOLTAGE: V cbo = 4 5 V DESCRIPTION The NE87112 N PN Silicon Transistor is designed for low-noise

OCR Scan

ne87112 -25-c 2sci260 -1222l +2

PDF

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

OCR Scan

an83301-1 ne24615 an83302 an83303-1 +16

PDF

73412

Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
Contextual Info: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7

OCR Scan

ne46134 ne85634 ne46734 ne85619 +11

PDF