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    TRANSISTOR BOOK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    		Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    		Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    ICL7667MJA
    		Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    93L422ADM/B
    		Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    54F151/BEA
    		Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy

    TRANSISTOR BOOK Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    free transistor equivalent book

    Abstract: transistor number code book FREE free all transistor equivalent book PNP TRANSISTOR SOT363 PUMF11 data sheet transistor PNP marking A1 TRANSISTOR PNP TRANSISTOR SC-70 transistor PNP MBK120
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMF11 NPN resistor-equipped transistor; PNP general purpose transistor Product specification 2002 Apr 09 Philips Semiconductors Product specification NPN resistor-equipped transistor; PNP general purpose transistor


    Original     		mbd128pumf11ot363ot323+12sc-70sca74613514/01/pp8free transistor equivalent booktransistor number code book freefree all transistor equivalent bookpnp transistor sot363data sheet transistor pnpmarking a1 transistorpnp transistor sc-70transistor pnpmbk120 PDF

    transistor number code book FREE

    Abstract: PNP TRANSISTOR SOT363 PUMF12 10311 marking A1 TRANSISTOR
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMF12 PNP general purpose transistor; NPN resistor-equipped transistor Product specification 2002 Nov 07 Philips Semiconductors Product specification PNP general purpose transistor; NPN resistor-equipped transistor


    Original     		mbd128pumf12ot363ot323+7sc-70sca74613514/01/pp8transistor number code book freepnp transistor sot36310311marking a1 transistor PDF

    D1486

    Abstract: 2SC4342
    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4342 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SC4342 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM


    Original     		2sc4342o-126d1486 PDF

    D1485

    Abstract: 2SA1720
    Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1720 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SA1720 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM


    Original     		2sa1720o-220d1485 PDF

    nec 620

    Abstract: 2SD1582 hFE transistor high hfe transistor
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1582 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1582 is a single type super high hFE transistor and low PACKAGE DRAWING UNIT: mm collector saturation voltage and high voltage. This transistor is


    Original     		2sd1582nec 620hfe transistorhigh hfe transistor PDF

    2SC3603

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise


    OCR Scan     		2sc3603 PDF

    2SA1743

    Abstract: C11531E
    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1743 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at low VCE(sat). This transistor is


    Original     		2sa1743c11531e PDF

    2SD1581

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1581 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS The 2SD1581 is a single type super high hFE transistor and low PACKAGE DRAWING UNIT: mm collector saturation voltage and low power loss. This transistor is


    Original     		2sd1581 PDF

    2SA1742

    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1742 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-speed ORDERING INFORMATION switching and features a high hFE at low VCE sat . This transistor is ideal


    Original     		2sa1742o-220 PDF

    2SA1741

    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1741 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1741 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at low VCE(sat). This transistor is


    Original     		2sa1741 PDF

    2SC4550

    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4550 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4550 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is


    Original     		2sc4550 PDF

    NEC 2sc4552

    Abstract: 2SC4552
    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4552 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4552 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is


    Original     		2sc4552nec 2sc4552 PDF

    D1615

    Abstract: transistor ab2 12
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD2425 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2425 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for


    Original     		2sd24252sb1578c11531ed1615+1transistor ab2 12 PDF

    2SD2402

    Abstract: transistor 2sD2402 Transistor Marking EY
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD2402 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2402 is a transistor featuring high current capacitance in small dimension. PACKAGE DRAWING UNIT: mm This transistor is ideal for


    Original     		2sd24022sb1571transistor 2sd2402transistor marking ey PDF

    NEC K 2500

    Abstract: N transistor NEC K 2500 2SC1223 transistor marking S00 2SC3604 2SC2367 NEC marking b NEC PART NUMBER MARKING 2SC3603 2SC2150
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise


    OCR Scan     		2sc360415obotsnec k 2500n transistor nec k 2500+72sc1223transistor marking s002sc2367nec marking bnec part number marking2sc36032sc2150 PDF

    2SB1453

    Abstract: NEC 2SB1453
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can directly drive from PACKAGE DRAWING UNIT: mm the IC output. This transistor is ideal for motor drivers and solenoid


    Original     		2sb1453nec 2sb1453 PDF

    2SB1453

    Abstract: NEC 2SB1453
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can directly drive from PACKAGE DRAWING UNIT: mm the IC output. This transistor is ideal for motor drivers and solenoid


    Original     		2sb1453nec 2sb1453 PDF

    D1316

    Abstract: 2SA1744
    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SA1744 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at Low VCE(sat). This transistor is


    Original     		2sa1744d1316 PDF

    BY206

    Abstract: BRY61 BZY88C8V2 BRY61 EQUIVALENT "Programmable Unijunction Transistor" unijunction application note
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BRY61 Programmable unijunction transistor Product specification Supersedes data of 1997 Jul 21 1999 Apr 27 Philips Semiconductors Product specification Programmable unijunction transistor DESCRIPTION


    Original     		m3d088bry61mgl167mgc421+7sca63115002/00/03/pp8by206bzy88c8v2bry61 equivalentprogrammable unijunction transistorunijunction application note PDF

    2SC4551

    Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC4551 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4551 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features low VCE(sat) and high hFE. This transistor is


    Original     		2sc4551 PDF

    PT 4304 a transistor

    Abstract: 2SC3587 noise diode
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise


    Original     		2sc3587pt 4304 a transistornoise diode PDF

    NEC RELAY

    Contextual Info: DATA SHEET DARLINGTON POWER TRANSISTOR 2SD2163 NPN SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING The 2SD2163 is a mold power transistor developed for lowspeed high-current switching. This transistor is ideal for direct


    Original     		2sd2163nec relay PDF

    transistor NEC D 586

    Abstract: nec a 634 NEC D 586 2SC3587 NEC K 2500 NEC 3500
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise am plification at 0.5 to 6.0 GHz. T his transistor has low-noise


    OCR Scan     		2sc3587transistor nec d 586nec a 634nec d 586+2nec k 2500nec 3500 PDF

    PDTC123ET

    Abstract: PDTA123ET
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123ET PNP resistor-equipped transistor Product specification File under Discrete Semiconductors, SC04 1997 Dec 15 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123ET


    Original     		m3d088pdta123etpdtc123etsca55+1117047/1200/01/pp8 PDF