TRANSISTOR BO 17 Search Results

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP3N20E QUICK REFERENCE DATA SYM BO L N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable

diode sy 400

Abstract: sy 320 diode
Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP10N40E QUICK REFERENCE DATA SYM BO L N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable

2N5006

Abstract: 2N5008 2N5288 2N5317 2N5319 2N5731 2N5957 WALTA
Contextual Info: General Transistor Corporation CASE le max = 10-20A V c e o ( s u s ) = 80-100V NPN Power Transistors ISOLATED COLLECTOR VCEO (aua) M 1C (mm) (A) 2N5006 2N5008 2N5288 2N5289 BO BO 100 100 10 10 10 10 30-90 @5/5 70-200 @ 5/5 30-90 @5/5 70-200 @ 5/5 1.5 @ 10/1

MJE170

Abstract: MJE171 MJE172
Contextual Info: MJE170/171 /172 PNP EPITAXIAL SILICON TRANSISTOR LOW POWER AUDIO AMPLIFIER LOW CURRENT, HIGH SPEED SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS C haracteristic Sym bol C ollector-Base Voltage : MJE170 V c bO Rating Unit -60 V : MJE171 -80 V : MJE172 -100

BD 130 NPN transistor

Abstract: transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330
Contextual Info: 25C D • 623SbOS 000434b 4 « S I E G _ NPN Silicon Planar Transistor BD 329 -SIEMENS AKTIENGESELLSCHAF 25C 043^6 O-.7 ^ SI - 0 7 BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly

transistor BD

Abstract: TRANSISTOR bd 330
Contextual Info: 2SC D • fl23SbDS QQQHBMI T M S I E G PNP Silicon Planar Transistor BD 330 _ 25C0 4 3 4 9 D T - 3 1 '/ ? SIEMENS AKTIENGESELLSCHAF BO 330 is an epitaxial PNP silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 329 it is particularly

2sc5143 transistor horizontal toshiba

Abstract: 2SC5143 2-16E3A
Contextual Info: TOSHIBA 2SC5143 2 S C 5 1 43 TOSHIBA FIELD EFFECT TRANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV ih, 15.5 ± 0.5 HIGH SPEED SWITCHING APPLICATIONS High Voltage : V^BO = 1700 V

Bd 130 NPN transistor

Abstract: 62702-D394 transistor z5
Contextual Info: 2SC D • 623SbQS QQQM3Mb M « S I E G NPN Silicon Planar Transistor - 25C BD 329 CK346 0 — 7 r ? i~. ° 7 SIEMENS AKTIENGESELLSCHAF BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly

Q62702-D401

Abstract: TRANSISTOR bd 330 b0330 A-04 Q62702-D395 Q62902-B63 spring washer 330 transistor transistor BD 329 4l transistor
Contextual Info: 2SC J> m ÔSBSbQS GGQHBMÌ T H S I E â PNP Silicon Planar Transistor _ BD 330 25C 04-349 D 7~“ 3 W / SIEMENS AKTIENGESELLSCHAF BO 3 3 0 is an epitaxial PNP silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 329 it is particularly

3155 power transistor

Contextual Info: PNP SILICON PLANAR LOW NOISE TRANSISTOR ZTX214C ISSUE 2 - MARCH 94 FEATURES * Low noise * High gain APPLICATIONS * Audio circuits * Instrumentation E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BO L Collector-Base Voltage VALUE UNIT V CBO

TRANSISTOR BJ 121

Abstract: characteristical do transistor 2sd2553 2SD2553 2SC2482 2-16E3A
Contextual Info: TOSHIBA 2SD2553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED M ESA TYPE 2SD2553 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV 15.5 ± 0.5 HIGH SPEED SWITCHING APPLICATIONS ih High Voltage : V^BO = 1700 V Low Saturation Voltage : V qe sa^ = 5 V (Max.)

Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR BSP15 ISSUE 3 - FEBRUARY 1996_ FEATURES * High vCE0 * Low saturation voltage COMPLEMENTARY TYPE: - BSP20 PARTMARKING DETAIL: - BSP15 ABSOLUTE M A X IM U M RATINGS. SYM BO L PARAM ETER Collector-Base Voltage

transistor 2028

Abstract: bi 370 transistor MJE 340 transistor BFE540 MBG190 bi 370 transistor e transistor sot353 transistor 2097 aa sot353
Contextual Info: Philips Semiconductors Preliminary specification NPN wideband differential transistor FEATURES BFE540 PINNING • Small size • Low voltage operation • Temperature matched • Balanced configuration • hpE matched. PIN SYM BO L 1 2 3 4 5 bi e base 1 emitter

Contextual Info: TOSHIBA 2SD2553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2553 Unit in mm H ORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, CO LO R TV . .15.5 ± HIGH SPEED SWITCHING APPLICATIONS 0.5 0 3 .6 1 0 .3 3.0 ±0.3 High Voltage V C BO = 170 0 V

Contextual Info: TOSHIBA 2SC5587 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5587 HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, CO LO R TV HIGH SPEED SWITCHING APPLICATIONS • • • High Voltage Low Saturation Voltage High Speed V C BO = 1500 V

transistor BD 430

Abstract: 0436L
Contextual Info: 2SC D • fl23Sb05 000435" 5 » S I E S - PNP Silicon Planar Transistor * BD 430 ', c r . 0 4 3 5 9 D SIEMENS AKTIEN6ESELLSCHAF T ~ .3 3 ~ / .Z - BO 4 3 0 is an epitaxial PNP silicon planar transistor in a plastic package similar to TO 2 0 2 . Together with its complementary transistor BD 4 2 9 it is particularly suitable for use in

Contextual Info: PNP SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ISSUE 2 - MARCH 94 FEATU RES * 12 Volt V,CEO fT=400MHz ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage SYM BO L Emitter-Base Voltage VALUE UNIT v CBO -12 V VCEO -12 V V

ZTX749

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 - APRIL 94 FEATU RES * 25 Volt V CE0 * 2 A m p continuous current * Low saturation voltage ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BO L Collector-Base Voltage VALUE UNIT V V VCBO -35 Collector-Emitter Voltage

Contextual Info: NPN SILICON PLANAR POWER TRANSISTOR ZBD849 PROVISIONAL DATASHEET ISSUE A - MARCH 94 FEATU RES * * * Fast switching Guaranteed hFE specified up to 20 Am ps Low collector-emmiter saturation voltage T0126 ABSOLUTE M A XIM U M RATINGS. SYM BO L PARAM ETER Collector-Base Voltage

C8050

Abstract: c 3337 ZTX1048A
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1048A ISSU E 2 - JANUARY 1995. . ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L Collector-Base Voltage ZT X 1 04 8A U N IT V CBO 50 V Collector-Emitter Voltage

le2m

Contextual Info: NPN SILICON PLANAR RF TRANSISTOR IS S U E 2 - M A R C H 94 FEATURES * * High fT, 1.3GHz Low noise < 5dB at 500MHz * Power output at 500MHz >175mW ABSOLUTE M A XIM U M RATINGS. PARAM ETER SYM BO L Collector-Base Voltage V CBO Collector-Emitter Voltage VALU E

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM200HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE QM200HC-M APPLICATION Robotics, W elders, Forklifts, Golf cart OUTLINE DRAWING & CIRCUIT DIAGRAM Dim ensions in mm BO — f - t j - - W V -4 — •f-AAA'-t- EO —-'j' ex ó

pj 899

Contextual Info: T im es ? 2N1711* *also available a: JAN, JANTX, JANTXV SILICON SMALL-SIGNAL NPN TRANSISTORS NPN GENERAL PURPOSE TRANSISTOR HIGH FREQUENCY HIGH CURRENT GAIN @ 1 5 0 mA LOW SATURATION VOLTAGE TO-39 TO-205AD M A X IM U M R A T IN G S SY M BO L 2N 1711 U N IT S

Contextual Info: ^ 33= 131 0 0 2 0 5 2 0 25E D N AMER P H I L I P S / D I S C R E T E S BUK456-50A BUK456-50B PowerMOS transistor T - 3^-13 GENERAL DESCRIPTION SYM BO L Cfl Q > N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in