TRANSISTOR BO 17 Search Results

2N5006

Abstract: 2N5008 2N5288 2N5317 2N5319 2N5731 2N5957 WALTA
Contextual Info: General Transistor Corporation CASE le max = 10-20A V c e o ( s u s ) = 80-100V NPN Power Transistors ISOLATED COLLECTOR VCEO (aua) M 1C (mm) (A) 2N5006 2N5008 2N5288 2N5289 BO BO 100 100 10 10 10 10 30-90 @5/5 70-200 @ 5/5 30-90 @5/5 70-200 @ 5/5 1.5 @ 10/1

transistor BD

Abstract: TRANSISTOR bd 330
Contextual Info: 2SC D • fl23SbDS QQQHBMI T M S I E G PNP Silicon Planar Transistor BD 330 _ 25C0 4 3 4 9 D T - 3 1 '/ ? SIEMENS AKTIENGESELLSCHAF BO 330 is an epitaxial PNP silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 329 it is particularly

Bd 130 NPN transistor

Abstract: 62702-D394 transistor z5
Contextual Info: 2SC D • 623SbQS QQQM3Mb M « S I E G NPN Silicon Planar Transistor - 25C BD 329 CK346 0 — 7 r ? i~. ° 7 SIEMENS AKTIENGESELLSCHAF BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly

transistor BD 430

Abstract: 0436L
Contextual Info: 2SC D • fl23Sb05 000435" 5 » S I E S - PNP Silicon Planar Transistor * BD 430 ', c r . 0 4 3 5 9 D SIEMENS AKTIEN6ESELLSCHAF T ~ .3 3 ~ / .Z - BO 4 3 0 is an epitaxial PNP silicon planar transistor in a plastic package similar to TO 2 0 2 . Together with its complementary transistor BD 4 2 9 it is particularly suitable for use in

Contextual Info: NPN SILICON PLANAR POWER TRANSISTOR ZBD849 PROVISIONAL DATASHEET ISSUE A - MARCH 94 FEATU RES * * * Fast switching Guaranteed hFE specified up to 20 Am ps Low collector-emmiter saturation voltage T0126 ABSOLUTE M A XIM U M RATINGS. SYM BO L PARAM ETER Collector-Base Voltage

Contextual Info: MITSUBISHI TRANSISTOR MODULES QM200HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE QM200HC-M APPLICATION Robotics, W elders, Forklifts, Golf cart OUTLINE DRAWING & CIRCUIT DIAGRAM Dim ensions in mm BO — f - t j - - W V -4 — •f-AAA'-t- EO —-'j' ex ó

pj 899

Contextual Info: T im es ? 2N1711* *also available a: JAN, JANTX, JANTXV SILICON SMALL-SIGNAL NPN TRANSISTORS NPN GENERAL PURPOSE TRANSISTOR HIGH FREQUENCY HIGH CURRENT GAIN @ 1 5 0 mA LOW SATURATION VOLTAGE TO-39 TO-205AD M A X IM U M R A T IN G S SY M BO L 2N 1711 U N IT S

Contextual Info: ^ 33= 131 0 0 2 0 5 2 0 25E D N AMER P H I L I P S / D I S C R E T E S BUK456-50A BUK456-50B PowerMOS transistor T - 3^-13 GENERAL DESCRIPTION SYM BO L Cfl Q > N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

sot23 transistor marking 12E

Abstract: 12E MARKING kec marking N
Contextual Info: SEMICONDUCTOR KTC3790S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES • Low Noise Figure, High Gain. • NF=1.2dB, |S2le|2=13dB f=lGHz . ° MAXIMUM RATING (Ta=25°C) ! SYMBOL V cB O V cE O V e bo Ic J i Mlà

transistor itt 973

Contextual Info: , L/nc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SC943 NPN h 7 V $/ /NPN SILICON EPITAXIAL TRANSISTOR Frequency Amplifier Use ft ^/FEATURES WB0/PACKAGE DIMENSIONS (Unittmm) •MtEtr-fo V C E O :40V, V E Bo'-8.0V

Contextual Info: -BTSSKte 2N6661 JANTX, JANTXV N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY _ TO-39 TO-205AD h O (V) (A) 90 4 0.86 V (B R )D S S BO TTO M VIEW •d 2 GATE 3 & C AS E-D R A IN ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

powertech

Contextual Info: BIG IDEAS IN BIG POWER” • PowerTecn BO A M P E R E S PT-75D4 PT-7505 PT-7506 SILICON NPN TRANSISTOR FEATURES: v C E s a t . 0.6 V @ 4 0 A hpE . 5 min @80 A IS/b ‘ 1.2 A @ 1 0 0 V V B E .

zq 405-MF

Abstract: siemens 30 090 GP 819 SAA 1006 saa 1070
Contextual Info: BSE D • Ö23b320 QQlb^BO T M S I P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS T'SI'I? BF P193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • ff = 8 GHz. F = 1.2 dB at 800 MHz. ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: KSC5047 NPN EPITAXIAL SILICON TRANSISTOR HIGH CURRENT GAIN LOW COLLECTOR EMITTER SATURATION VOLTAGE ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit C o lle c to r B a s e V o lta g e V c bO 100 V C o lle c to r E m itte r V o lta g e VcEO 50 V

2N6659

Contextual Info: 2N6659 N-Channel Enhancement-Mode MOS Transistor in c o r p o r a te d V BR DSS "S "1 (V) 35 1 .8 BO TTO M VIEW TO -39 (TO-2Q5AD) PRODUCT SUMMARY •d (A) 0 .1 8 2 GATE 3 & CASE-DRAIN Performance Curves: VNDQ06 I»— u ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

TRANSISTOR BC 213

Abstract: TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor
Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .

Contextual Info: N AMER PHILIPS/DISCRETE SSE D • 0020265 T ■ P o w e rM O S tra n s is to r B U K 436-50A B U K 436-50B 13 GENERAL DESCRIPTION SYM BO L tr. G > N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: □ I X Y Advanced Technical Information S High Voltage BIMOSFET Monolithic Bipolar MOS Transistor VCES IXBH 9N140 IXBH 9N160 ^C 25 V C E sa t N -C hannel, E n ha n ce m e n t M ode tfi 1400/1600 V 9A 5.8 V typ. 40 ns T O -2 4 7 A D S ym bo l C o n d itio n s

E3030

Contextual Info: SOT223 NPN SILICON PLANAR DARLINGTON TRANSISTOR FZTA14 ISSUE 3 -J A N U A R Y 1996_ P A R T M A R K IN G DETAIL:- D E V IC E T Y P E IN F U L L C O M P LEM EN T A R Y TYPE FZTA64 ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L C olle ctor-E m itter V o lta ge

bfw16a philips

Abstract: BFW16A transistor bfw16a LB1936 vk200 philips bfw16a philips semiconductor ic 1014b Transistor D 798 transistor bq 17 1014b
Contextual Info: Philips Semiconductors Product specification T— 31— 17 NPN 1 GHz wideband transistor BFW16A SbE J> PHILIPS INTERNATIONAL 004L0n DESCRIPTIO N T32 • P H I N PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.

k443

Abstract: BUK443-100A BUK443-100B
Contextual Info: PHILIPS INTERNATIONAL bSE D E9 711DflEb □DbB'lSt. 172 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

BFQ234/I

Abstract: BFQ234 BFQ254
Contextual Info: Philips Semiconductors Product specification - T Z33-05 NPN 1 GHz video transistor PHILIPS INTERNATIONAL DESCRIPTION BFQ234; BFQ234/I D ShE ' PINNING NPN silicon epitaxial transistor in SOT 172A1 and SOT 172A3 envelopes, with emitter-ballasting resistors and

bo 615

Abstract: ic 2 bo 565 bf 649 AI 757 transistors ai 757 BF415 boitier to 126 transistor ESM 30 TO-126-F To 126
Contextual Info: T O 92 F 139 B CB 97 (CB 76) Silicon N PN transistor», video high voilage Transistors N P N silicium, haute tension vidéo Case Type B oitie r ptot (W) 2N 5 5 50 T O 92o 2N 5551 T O 92o BF 179C T O 39 0,6 B F 257 T O 39 51 B F 258 T O 39 * B F 259 8 F 297

Contextual Info: Transistor 2SC2851 Silicon NPN epitaxial planer type For high-frequency power amplification Unit: mm 5.9±0.2 4.9±0.2 ● ● 8.6±0.2 M Di ain sc te on na tin nc ue e/ d • Features High transition frequency fT. Output of 0.6W is obtained in the VHF band f = 175MHz .