TRANSISTOR BH RW Search Results

BLX67

Abstract: mrtil transistor 3568
Contextual Info: N AMER PHILIPS/DISCRETE 8 6D ObE 01766 I D 7 -" ~ j • 1^53^31 G014DDM 3 - o Jr ~ BLX67 A U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor for use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V,

car inverter theory

Abstract: baxandall chopper transformer winding formula sterling inverter diagrams 2N1552 2N3612 3 phase inverter 120 conduction mode theory 1961 motorola power transistor handbook 2N2527 12VOLT SCR DIAGRAMS
Contextual Info: AN-222 Application Note THE ABC’SOFDCTOAC Revised by amination inverters. .~{ of the entire Among the proper inverter tion; operating of inverters; field of dc to ac the topics discussed are; for a specific principlesof the problem applica- different selection in the design of inverters,

TRANSISTOR BH RW

Abstract: BH Re transistor
Contextual Info: M IT S U B IS H I BIPOLAR D IG ITA L ICs M54569P 8 -U N IT 30m A PNP TR A N S IS TO R ARRAY DESCRIPTION The M54569P, general purpose transistor array, consists of 8 PIN CONFIGURATION TOP VIEW °N P transistors connected in a common-emitter configuraion.

Contextual Info: N ANER PHILIPS/DISCRETE fc.'lE D bbSBTBl DQBDafciD SHI * A P X Philips Semiconductors Product Specification PowerMOS transistor Fast recovery diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. FREDFET with fast recovery

TRANSISTOR BH RW

Contextual Info: Silicon N-Channei M OSFET Tetrode BF 998 • Short-channel transistor with high S/C quality factor G2 • For low-noise, gain-controlled input stages up to 1 GHz § Type M a rk in g O rdering code for v e rsio n s in bu lk O rdering co de for v e rs io n s on tape

transistor 2sc2630

Abstract: 2SC2630 pin 2sc2630 T-40 RF POWER TRANSISTOR NPN vhf 50w rf power transistor mitsubishi RF POWER TRANSISTOR
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2630 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC2630 is a silicon NPN epitaxial planar typ e transistor designed Dimensions in mm fo r RF power am plifiers in V H F band m obile radio applications. R1 FEATURES

TRANSISTOR BH RW

Abstract: Opto-Sensor reflective Opto-Sensor GE opto detector
Contextual Info: Temic C NY7 0 S e m i c o n d u c t o r s Reflective Optosensor with Transistor Output Description The CNY70 has a compact construction where the emitting light source and the detector are arranged in the same direction to sense the presence of an object by using

TRANSISTOR BI 243

Contextual Info: Eli SLOTTED OPTICAL SWITCH OPTOELECTRONICS H22A1/2/3 PACKAGE DIMENSIONS SYMBOL MILLIMETERS MIN. - P t L <t>b bi 10.7 11.0 .422 .433 3.0 3.2 .119 .125 .024 .030 .600 .750 .50 NOM. 11.6 12.0 .020 NOM. .457 3.0 3.3 .119 .129 6.9 7.5 .272 .295 e2 E 2.3 2.8 .091

KS621K3010

Abstract: powerex ks62 14B21
Contextual Info: 7294621 POVIE REX IN C 7?^ ?1 □ D I]Q i:i l l ~ ~ Y Single Darlington TRANSISTO R Modules Dim A B C D E F G H J K L M N Inches 4.260 Max 3.660 ±.012 2.44 Max 1.89 ±.012 1.00 Max 1.42 Max 1.141 .827 .512 .354 .630 .256 .256 Dia 4 Millimeters 108 Max 93 ±0.3

ifm D 45128

Abstract: kd 2060 transistor
Contextual Info: .co m Original Device Manual ClassicController w.if m CR0032 Runtime system v02 ele ifm 7390660_07_UK 2014-08-15 ctro nic gm bh ww CODESYS v2.3 > English ifm Device Manual ecomatmobile ClassicController CR0032 Runtime System V02 2014-08-15 .co m Contents

BUK543

Abstract: BUK543-100A BUK543-100B
Contextual Info: f . - — - - - . — - PHILIPS INTERNATIONAL bSE D B - 711065b D D b 4 m Philips Semiconductors - TD7 • PHIN Product Specification PowerMOS transistor

8051 microcontroller interface with ir sensors

Abstract: iron bh curve siemens Mass Air Flow Sensor siemens TLE 4905L TRANSISTOR BH RW TESLA transistor Bipolar Static Induction Transistor ir slotted wheel encoder camshaft sensor target wheel axial sensing real time application of shape memory alloys
Contextual Info: SIEMENS 6 Silicon Hail-Effect Sensors 6.1 Introduction Silicon Hall-Effect Sensors Electrical Tests and Application Circuit • The sockets or integrated circuits must not be conducting any voltage when individual devices or assembled circuit boards are inserted or withdrawn, unless works’

smd transistor e42

Abstract: smd diode 3s4 SMD IC 3H3 ferroxcube 3E1 3R1 toroid push-pull converter design etd49 3R1 ferrite etd39 core type smps transformer design soft ferrite handbook
Contextual Info: Ferroxcube Soft Ferrites Applications APPLICATIONS Material requirements: Introduction • Low losses • Defined temperature factor to compensate temperature drift of capacitor Soft ferrite cores are used wherever effective coupling between an electric current and a magnetic flux is

TRANSISTOR FF75

Abstract: 1BW TRANSISTOR
Contextual Info: 7 ^ 3 9 - 3 / FF 75 R 06 KL ElIPEC S2E D 0000504 Thermische Eigenschaften Transistor Transistor 34Q32T7 Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 600 V 75 A RthCK lc T3 7 • U P E C Thermal properties DC, pro Baustein / per module

TEMPLATEA

Abstract: kd 2060 transistor
Contextual Info: .co m Original Device Manual CabinetController w.if m CR0303 Runtime system v05 ele ifm 7390669_05_UK 2014-08-19 ctro nic gm bh ww CODESYS v2.3 > English ifm Device Manual ecomatmobile CabinetController CR0303 Runtime System V05 2014-08-19 .co m Contents

Contextual Info: 7 ^ 3 9 - 3 / FF 75 R 06 KL ElIPEC S2E D Rthjc Elektrische Eigenschaften Electrical properties VCES Maximum rated values 600 V 75 A RthCK lc 0000504 Thermische Eigenschaften Transistor Transistor 34Q32T7 T3 7 • U P E C Thermal properties DC, pro Baustein / per module

Q002

Abstract: transistor BU 110 BU 500 DT 1BW TRANSISTOR
Contextual Info: T Î3 9 -3 / F 300 R 06 KL SEE EUPEC 34G32T7 D T1 7 « U P E C Thermische Eigenschaften Thermal properties Rthjc DC, pro Baustein /per module 0,1 Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 600 V 300 A RthCK

Contextual Info: TO SH IB A 2SC5422 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5422 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV FOR MULTI-MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS • • • High Voltage Low Saturation Voltage

H0A1887

Abstract: A1887 HOA1887 HOA1887-012
Contextual Info: HOA1887 Transmissive Sensor FEATURES . Choice of phototransistor or photodarlington output • Side mount package . Ambient light and dust protective filter • Accurate position sensing . 0.010 in. 0.25mm aperture windows • 0.125 in.(3.18 mm) slot width

RZ2731B48W

Abstract: USA104 tRANSISTOR 2.7 3.1 3.5 GHZ cw
Contextual Info: 7 3 3 /3 Philips Components Data sheet status Product specification date of Issue June 1992 RZ2731B48W 711002b 5bE D e m itte r e ffic ie n c y . • D iffu s e d e m itte r b a lla s tin g resistors p ro v id in g e x c e lle n t c u rre n t sharing ' 0Ü4L572

k20s

Abstract: NPN planar RF transistor RZ3135B14W
Contextual Info: 7= 3 3 -/'' Philips Components Data sheet status Prelim inary specification date of Issue Jun e 1992 PHILIPS RZ3135B14W NPN silicon planar epitaxial microwave power transistor INTERNAT IONAL FEATURES Sb E D 711Dö2tj • In te rd ig ita te d s tru c tu re ; high

transistor c961

Contextual Info: bitemational [ÎÔR]Rectifier Preliminary Data Sheet PD - 5.036 IGBT SIP MODULE Features Short Circuit Rated UltraFast IGBT CPU165MK • Short Circuit Rated - 10 js @ 125°C, Vge = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses

1BW TRANSISTOR

Abstract: F300R06KF R600
Contextual Info: 7 =3 f - 3 / F300R 06K F EUPEC SEE • 3M 032T7 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte V ces Maximum rated values 600 V 300 A le 2 ^ O O O O B M fl Thermische Eigenschaften Transistor Transistor D HUPEC Thermal properties DC, pro Baustein/p e r module

transistor smd MJ 145

Abstract: g10 smd transistor transistor smd bh SMD Transistor 502 c858
Contextual Info: P D - 9.1130 International [iÖR1Rectifier IRGBC20K-S Short Circuit Rated UltraFast Fast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features 10 • Short circuit rated - 10ps @ 125°C, Vge = 15V • Switching-loss rating inciudes all "tail* losses • Optimized for high operating frequency over 5kHz