TRANSISTOR BH RA Search Results

Contextual Info: bbSB'Gl □D2^3DD flflT • APX N AKER PHILIPS/DISCRETE bH E BLW31 » V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B or C operated mobile transmitters with a nominal supply voltage o f 13,5 V. Because of the high gain and excellent power

147 B transistor

Abstract: Transistor 2SB 148 2SB1386 2sb transistor
Contextual Info: 2SB1386 Transistor, PN P Features Dimensions Units : mm available in MPT3 (MPT,SOT-89 SC-62) package package marking: 2SB1386; BH-*, where ★ is hFE code 2SB1386 (MPT3) low collector saturation voltage, typically VCE(sat) = -0.35 V for lc/lB = -4 A/-0.1A

PTH60G30BD150N

Abstract: PTH62H02AR180M265 PTH59F PTH61
Contextual Info: POSISTORS FO R C IR C U IT PRO TECTIO N PTH9M/59F SERIES FOR POWER TRANSISTOR OVERHEAT PROTECTION PTH9M Part Number * PTH9M04D471TS2F333 PTH59F04D471TS PTH9M04D222TS2F333 ♦PTH59F04D222TS □ BH BG TS 70 25 °C Resistance TS-10 (°C) TS (°C) Max. Voltage

transistor j127

Contextual Info: Philips Semiconductors bbS3T31 OOHT^bH 512 M A P X Prodwtspecltlcatlon VHF push-pull power MOS transistor BLF245B N AMER PHILIPS/ 5 ISCRETE t iT E ]> PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

Contextual Info: 2SB1386 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT,SOT-89 SC-62) package • package marking: 2SB1386; BH^, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.35 V for lc/lB = ~4 A/—0.1 A

42t sot-23

Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
Contextual Info: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen

IFBB

Contextual Info: Philips Semiconductors b b S 3T 31 0 Q 3 Q lb 4 610 M UHF push-pull power MOS transistor a n N AMER PHILIPS/DISCRETE FEATURES APX Product specification BLF547 bH E I PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

DA5 diode

Contextual Info: IPB110N06L G IPP110N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5<  E5AB9 ?> I9 .( J Y" /0 6 P   S ? @5A1C

Diode Marking C.3

Abstract: da5 diode DA5 marking 5411C
Contextual Info: IPB070N06L G IPP070N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5<  E5AB9 ?> I9 .( J .&/ Y" 0( 6 P   S ? @5A1C

da5 diode

Abstract: BC519 IPB048N06L IPP048N06L DA QG marking 1bc
Contextual Info: IPP048N06L G IPB048N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5<  E5AB9 ?> I9 .( J ,&, Y" ( 6 P   S ? @5A1C

IPB085N06L

Abstract: da5 diode marking 4rt IPB085N06L G
Contextual Info: IPB085N06L G IPP085N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5<  E5AB9 ?> I9 .( J 0&* Y" 0( 6 P   S ? @5A1C

2N3725

Abstract: A13724
Contextual Info: ALLEGRO MICROSYSTEMS INC T3 D □S0433Ö 0DD3b51 S • ALGR T - q i- o l P R O C E S S BH B Process BHB NPN High-Speed Switching Transistor P ro c e ss B H B is a double-diffused epitaxial planar N PN silicon device designed to be used in high­ sp e e d , high-current sw itching applications.

DA QG

Contextual Info: IPB065N06L G IPP065N06L G "%&$!"# Power-Transistor Product Summary Features P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< V 9H .( J R  , ? >=1G .&- Y" I9 0( 6 P   S ? @5A1C 9>7 C 5=@5A1C

Contextual Info: nyNPNT^^Pibyis-i-Bh^yyz? CON NPN EPITAXIAL PLANAR TRANSISTOR a ft x m m o VHF P o w e r A m p l i f i e r A p p l i c a t i o n s • P 0 = 1 0 W M i n . ( VCC = 2 0 V , P j = 1 . 0 f f , INDUSTRIAL APPLICATIONS Unit : mm f = 2 7 0MHz ) Recommended fo r H igh G a in C la s s C Pow er

Contextual Info: CMOS LDO Regulators for Portable Equipments 1ch 150mA CMOS LDO Regulators BH□□NB1WHFV series No.11020EBT04 ●Description The BH□□NB1WHFV series is a line of 150 mA output, high-performance CMOS regulators that deliver a high ripple rejection ratio of 80 dB Typ., 1 kHz . They are ideal for use in high-performance, analog applications and offer improved line

regulator BH

Abstract: BH15LB1WHFV BH28FB1WHFV BH30MA3WHFV hvsof6
Contextual Info: CMOS LDO Regulator Series for Portable Equipments Standard CMOS LDO Regulators BH □□ FB1WG series, BH□□ FB1WHFV series, BH □□ LB1WG series, BH□□ LB1WHFV series Large Current 300mA CMOS LDO Regulators BH □□ MA3WHFV Series No.09020EBT02 Description

Inverter Transformer Core Design and Material Selection

Abstract: TWC-S3 supermalloy bh curve TRANSISTOR bH-16 MAGNESIL - N TRANSISTOR bH-10 nickel bh curve orthonol permalloy bh curve magnesil core
Contextual Info: Division of Spang & Company Inverter Transformer Core Design and Material Selection INTRODUCTION . . 2 TYPICAL OPERATION . 2

2N2646-47

Abstract: D5J44 2N2646 2N2646.47 scr firing circuits dsj44 SCR 2N2646 VBII SITN
Contextual Info: Silicon Unijunction Transistor Please refer to specification 2N2646-47 for further information on this device. a b so lu te m axim um ra tin g s: 2 5 ° C Pow er D issipation (Note 1) RMS Em itter C urrent 300 mW 50 mA 2Amperes 30Volts 35 Volts —6 5 °C to + 1 2 5 ‘

Contextual Info: BH30MA3WHFV CMOS LDO Regulator Series for Portable Equipments Standard CMOS LDO Regulators BH ŜŜ FB1WG series, BHŜŜ FB1WHFV series, BH ŜŜ LB1WG series, BHŜŜ LB1WHFV series Large Current 300mA CMOS LDO Regulators BH ŜŜ MA3WHFV Series No.10020ECT02

Contextual Info: BH15MA3WHFV CMOS LDO Regulator Series for Portable Equipments Standard CMOS LDO Regulators BH ŜŜ FB1WG series, BHŜŜ FB1WHFV series, BH ŜŜ LB1WG series, BHŜŜ LB1WHFV series Large Current 300mA CMOS LDO Regulators BH ŜŜ MA3WHFV Series No.10020ECT02

OH090U

Abstract: OHS3120U OH180U OH3013U OH360U OHN3000 OHN3019U OHN3100 OHS3000 OHS3100
Contextual Info: Hallogic Hall-effect Sensors OH090U, OH180U, OH360U OHN3000 Series, OHS3000 Series OHN3100 Series, OHS3100 Series Features: • Designed for non-contact switching operations • Operates over broad range of supply voltages 4.5 V to 24 V • Operates with excellent temperature stability in harsh

Contextual Info: BH33MA3WHFV CMOS LDO Regulator Series for Portable Equipments Standard CMOS LDO Regulators BH ŜŜ FB1WG series, BHŜŜ FB1WHFV series, BH ŜŜ LB1WG series, BHŜŜ LB1WHFV series Large Current 300mA CMOS LDO Regulators BH ŜŜ MA3WHFV Series No.10020ECT02

Contextual Info: BH29MA3WHFV CMOS LDO Regulator Series for Portable Equipments Standard CMOS LDO Regulators BH ŜŜ FB1WG series, BHŜŜ FB1WHFV series, BH ŜŜ LB1WG series, BHŜŜ LB1WHFV series Large Current 300mA CMOS LDO Regulators BH ŜŜ MA3WHFV Series No.10020ECT02

Contextual Info: BH28MA3WHFV CMOS LDO Regulator Series for Portable Equipments Standard CMOS LDO Regulators BH ŜŜ FB1WG series, BHŜŜ FB1WHFV series, BH ŜŜ LB1WG series, BHŜŜ LB1WHFV series Large Current 300mA CMOS LDO Regulators BH ŜŜ MA3WHFV Series No.10020ECT02