TRANSISTOR BH Search Results

Contextual Info: N AUER PHILIPS/DISCRETE b'lE » bbSa'ni QQS^bHl OHS BLX95 IAPX A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r transmitting applications in class-A, B or C in the u.h.f. frequency range fo r supply voltages up to 28 V. The transistor is resistance stabilized and is

MSB11900Y

Abstract: philips ic power amplifier
Contextual Info: N AMER PH ILIPS/DI SCRE TE OLE D • bh53iBl DDlSQb? & ■ MSB11900Y T - 3 3 - is r PULSED M ICROW AVE PO W ER TRANSISTOR N-P-N silicon power transistor two transistor sections intended for use in military and professional applications. It operates only in pulsed conditions and is recommended for IF F applications at

Transistor marking S

Abstract: BC807-16W BC807-25W BC807-40W BC807W BC808-16W BC808-25W BC808-40W BC808W
Contextual Info: bhSa^l P hilip s Sem iconductors 002M443 STT IAPX Product specification PNP general purpose transistor BC807W; BC808W AUER PHILIPS/DISCRETE FEATURES b?E PIN CONFIGURATION • High current • S- mini package. DESCRIPTION PNP transistor in a plastic SOT323

transistor tt 2222

Abstract: TT 2222 npn SOT171 multilayer ceramic capacitor heatsink catalogue BLV934 philips 0201 capacitor transistor 257 isolated npn metal
Contextual Info: Philips Semiconductors Product specification UHF power transistor BLV934 FEATURES DESCRIPTION • Internal input matching to achieve high power gain and easy design of wideband circuits NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor has

Contextual Info: N AUER PH ILIPS/DISCRETE fc,TE ]> • bhSSTSl 00 263 27 03S * A P X Philips Product specification Silicon diffused power transistor BU1508AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack

Contextual Info: 1-1 N AMER PHILIPS/DISCRETE DhE D • bhS3T31 DQ1S247 T ■ RZ2833B30W MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.

BUK456-60H

Abstract: T0220AB
Contextual Info: PHILIPS INTERNATIONAL fc.5E D m 711QÔ2b Q Q b m i l bHH W P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device Is intended for use in

Contextual Info: N AMER PHILIPS/DISCRETE 5SE D bhS3cm □020570 ^ PowerMOS transistor Logic Level FET BUK542-60A BUK542-60B r - 3^-09 SYMBOL CO N-channel enhancem ent mode logic level field-effect power transistor in a plastic full-pack envelope. Th e device is intended for use in

Contextual Info: N AUER PHILIPS/DISCRETE bTE ]> • bbsa'm 005770^ asb APX Bh92b JV SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a TO-92 envelope intended for use as preamplifier, mixer and oscillator in v.h.f. and u.h.f. tuners. QUICK REFERENCE DATA Collector-base voltage open emitter

Contextual Info: HTT1115E Silicon NPN Epitaxial Twin Transistor REJ03G0838-0200 Previous ADE-208-1439A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor

TRANSISTOR SMD MARKING CODE 702

Abstract: 702 TRANSISTOR smd HTT1115EFTL-E 2SC5700 2SC5757 HTT1115E MARKING CODE SMD IC transistor smd marking KA
Contextual Info: HTT1115E Silicon NPN Epitaxial Twin Transistor REJ03G0838-0200 Previous ADE-208-1439A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor

transistor smd marking KA

Abstract: 702 TRANSISTOR smd 2SC5700 2SC5849 HTT1127E HTT1127ERTL-E smd code marking for japanese MARKING CODE SMD IC HTT1127ERTL
Contextual Info: HTT1127E Silicon NPN Epitaxial Twin Transistor REJ03G0839-0100 Previous ADE-208-1540 Rev.1.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5700 Q2: Equivalent OSC transistor

Contextual Info: HTT1129E Silicon NPN Epitaxial Twin Transistor REJ03G0840-0200 Previous ADE-208-1541A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5849 Q2: Equivalent OSC transistor

702 TRANSISTOR smd

Abstract: transistor smd marking KA 2sc5872 TRANSISTOR SMD MARKING CODE 702 2SC5849 HTT1129E HTT1129EZTL-E MARKING CODE SMD IC
Contextual Info: HTT1129E Silicon NPN Epitaxial Twin Transistor REJ03G0840-0200 Previous ADE-208-1541A Rev.2.00 Aug.10.2005 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 (6 Leads: 1.2 x 0.8 x 0.5 mm) Q1: Equivalent Buffer transistor 2SC5849 Q2: Equivalent OSC transistor

transistor 2222a

Contextual Info: SERIES TPQ QUAD TRANSISTOR ARRAYS Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic package. The molded package is identical to that used with most

HAT1058C

Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 Product Marketing Dept. Multi Purpose Semiconductor Business Unit Semiconductor & Integrated Circuits, Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,

Contextual Info: Philips S em iconductors bhS3T31 0031b53 437 M l APX Product specification NPN 4 GHz wideband transistor BFQ68 N AMER PHILIPS/DISCRETE bTE » PINNING DESCRIPTION NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud.

diode BB102

Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,

Contextual Info: • bh53131 00E3T77 STT « A P X N A PIER PHIL IPS/D ISCR ETE BST120 b7E D P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel vertical D-MOS transistor in SOT89 envelope and intended for use in relay, high-speed and line-transformer drivers, using SMD technology.

Contextual Info: PhlHps^Semiconductors_ M b b 5 3 H 31 0 0 313 3 H 314 H APX Product specification NPN 7 GHz wideband transistor BFG195 N AUER PHIL IPS/DISCRETE DESCRIPTION bHE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for wideband

transistor tt 2222

Abstract: Trimmer 10-60 pf transistor h 1061 15 w RF POWER TRANSISTOR NPN bly87c IEC134 yl 1060
Contextual Info: PHILIPS INTERNATIONAL b SE D • 7110flSb GübBSt.3 «PHIN BLY87C J V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and

BLX91A

Abstract: BLX91 R33F 0180 capacitor de polyester MHA IEC134
Contextual Info: N AMER~ PHILIPS/DISCRETE" 86D Dfc-E D • 1^53131 001403t. 01798 JI BLX91A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

BLW 82

Contextual Info: N AMER PHILIPS/DISCRETE b'lE » bb53T31 QQ2T4MT 374 J APX DLVVO O V H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and

Contextual Info: bbSB'Gl □D2^3DD flflT • APX N AKER PHILIPS/DISCRETE bH E BLW31 » V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B or C operated mobile transmitters with a nominal supply voltage o f 13,5 V. Because of the high gain and excellent power