TRANSISTOR BFR 96 Search Results

Contextual Info: SIEMENS BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F=1.45dB at 900MHz SOT-23 RFs Q62702-F1314 1= B 2=E o Package BFR 181 II CO ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: Temic BFR90A S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications R F-am plifier up to G H z range specially for w ide band antenna am plifier. Features • H igh pow er gain • L ow noise figure • High transition frequency BFR 90A M arking: BFR 90A

bfr96s

Contextual Info: SIEMENS BFR 96S NPN Silicon RF Transistor • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 2 GHz at collector currents from 10 mA to 70 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions!

Transistor BFR 96

Abstract: Bfr 910 BFR96T TRANSISTOR BFR 642 telefunken BFR 34 A
Contextual Info: BFR 96 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR96T Marking Plastic case XTO 50

BFR 970

Abstract: BFR96TS Transistor BFR 96 Bfr 910 Transistor BFR 90 application Transistor BFR 559
Contextual Info: BFR 96 TS TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR96TS Marking Plastic case XTO 50

m6c marking code

Abstract: MMBFU310LT1G M6C sot-23
Contextual Info: MMBFU310LT1G JFET Transistor N−Channel Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage

Q62702-F1491

Abstract: GMA marking 175fF
Contextual Info: BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

MMBFJ310LT1G

Abstract: MMBFJ310LT1 MMBFJ309LT1G ON SEMICONDUCTOR MMBFJ309LT1G MMBFJ309 MMBFJ309LT1 MMBFJ310
Contextual Info: MMBFJ309LT1G, MMBFJ310LT1G JFET - VHF/UHF Amplifier Transistor N−Channel http://onsemi.com Features 2 SOURCE • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage

Q62702-F1314

Contextual Info: BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

MMBFU310LT1G

Abstract: MMBFU310
Contextual Info: MMBFU310LT1G JFET Transistor N−Channel Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage

TRANSISTOR BC 136

Abstract: TRANSISTOR SOT-23 marking JE
Contextual Info: TELEFUNKEN ELECTRONIC fllC P • a^HDO^b 0005301 b B A L G G BFR 96 M electronic T 'J /-U Creative Technologies Silicon NPN Planar RF Transistor Applications: RF-ampllfier up to GHz range specially for wide band antenna amplifier Features: • High power gain

Contextual Info: SIEMENS BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration

Contextual Info: MMBFU310LT1G JFET Transistor N−Channel Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage

Transistor BFR 96

Abstract: TRANSISTOR BC 157 TRANSISTOR BC 158 transistor K 3596 TRANSISTOR as BC 158 BFR96S transistor bc 238 b silicon npn planar rf transistor sot 143 transistor B 722 Telefunken u 237
Contextual Info: TELEFUNKEN ELECTRONIC file D • fiSSOO^b 0 0 0 5 3 0 3 T BFR 96 S electronic Creative Technologies Silicon NPN Planar RF Transistor Applications; RF-amplifier up to GHz range specially for wide band antenna amplifier Features: • High power gain • Low noise figures

BFR 965

Abstract: BFR 36.2 Transistor BFR sot 23 transistor 70.2 Q62702-F1315 sot-23 marking code 352 0482 transistor 0166 415 04 1 060 bfr 705
Contextual Info: NPN Silicon RF Transistor BFR 182 Preliminary Data ● For low-noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. ● fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!

Transistor BFR 181w

Abstract: GMA13 MARKING CODE 21E SOT323 TRANSISTOR BO 345
Contextual Info: SIEMENS BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fr = 8GHz F=1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

BFR91

Abstract: Transistor BFR 90 application transistor BFR91
Contextual Info: BFR 91 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR91 Marking Plastic case XTO 50

Transistor BFR

Abstract: Transistor BFR 191 Transistor BFR 39 BFR 67
Contextual Info: BFR 35AP NPN Silicon RF Transistor • For broadband am plifiers up to 2 GHz and fast non­ saturated switches at collector currents from 0.5 to 20 mA. C ESD: E lectrostatic discharge sensitive device, observe handling precautions! Type M arking Ordering code

Transistor BFR 90 application

Abstract: BFR90A Transistor BFR 35 Transistor BFR 90 693 071 010 811
Contextual Info: BFR 90 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR90A Marking Plastic case XTO 50

BFR90

Abstract: BFR 90
Contextual Info: BFR 90 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 3 2 1 BFR90 Marking Plastic case XTO 50

CD 1691 CB

Abstract: CM 1241 siemens R193L cd 1191 cb transistor rf cm 1104 F1218 Transistor BFR 559
Contextual Info: NPN Silicon RF Transistor BFR 193 • For low-noise, high-gain am plifiers up to 2 GHz • For linear broadband amplifiers. • fT = 8 GHz. F = 1.2 d B at 800 MHz. B ESD: E lectrostatic discharge sensitive device, observe handling precautions! Type Marking

VSO05561

Abstract: Transistor BFR 181w
Contextual Info: BFR 181W NPN Silicon RF Transistor 3
For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

p 181 V

Contextual Info: BFR 181 NPN Silicon RF Transistor 3
For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

Transistor BFR 191

Abstract: bfr 49 transistor transistor eb 2030
Contextual Info: BFR 92P NPN Silicon RF Transistor • For broadband am plifiers up to 2 GHz and fast non-saturated sw itches at co lle cto r currents from 0.5 to 20 mA. C E C EC C -type available: CECC 50002/254. ESD: E lectrostatic discharge sensitive device, observe handling precautions!