TRANSISTOR BFR 450 Search Results

Transistor BFR 35

Abstract: Transistor BFR 38 Transistor BFR Transistor BFR 97 K 2056 transistor Transistor BFR 39 transistor npn d 2058 transistor K 2056 Transistor BFR 98 Transistor BFR 91
Contextual Info: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package

Transistor BFR 96

Abstract: Transistor BFR 30 bfr 547 Transistor BFR 191 silicon npn planar rf transistor sot 143 SOT-23R BFR 970 ZO 103 Telefunken Electronic BFR92
Contextual Info: BFR 92 / BFR 92 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92 Marking: P1

BFR92A

Abstract: Transistor BFR 450 BFR 67 BFR 94 Transistor BFR 35 Transistor BFR 91 Transistor BFR 67 BFR92AR BFR 450 Transistor BFR 30
Contextual Info: TELEFUNKEN Semiconductors BFR 92 A / BFR 92 A R Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92A Marking Plastic case SOT 23

Transistor BFR 90 application

Abstract: BFR93A bfr 93 a Transistor BFR 93 BFR 93 BFR93AR Transistor BFR marking R2 BFR 30 transistor bfr93
Contextual Info: TELEFUNKEN Semiconductors BFR 93 A / BFR 93 A R Silicon NPN Planar RF Transistor Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure 1 2 1 3 3 2 94 9280 BFR93A Marking: R2 Plastic case SOT 23

Transistor BFR 30

Abstract: silicon npn planar rf transistor sot 143 zo 103 ma BFR 67 BFR93 bfr 705 BFR 30 transistor Transistor BFR 14 Transistor BFR 35 ZO 103
Contextual Info: BFR 93 / BFR 93 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR93 Marking: R1

Contextual Info: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • /f = 8 GHz F = 1.2 dB at 900 MHz RHs Q62702-F1316 1= B li O BFR 183 CO ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: NSM6056MT1G NPN Transistor with Zener Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant Typical Applications NPN Transistor with Zener Diode • Driving Circuit • Switching Applications 6 MAXIMUM RATINGS − NPN TRANSISTOR

Marking M60

Abstract: transistor 11
Contextual Info: NSM6056MT1G NPN Transistor with Zener Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant Typical Applications NPN Transistor with Zener Diode • Driving Circuit • Switching Applications 6 MAXIMUM RATINGS − NPN TRANSISTOR

Transistor BFR

Abstract: PZTA96ST1G
Contextual Info: PZTA96ST1G High Voltage Transistor PNP Silicon Features • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 2,4 BASE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO - 450 Vdc

sot 23 marking code 2t

Abstract: MMBT4403LT1 MMBT4403LT1G MMBT4403LT3G
Contextual Info: MMBT4403LT1G Switching Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage

MMBT4403LT1

Abstract: MMBT4403LT1G MMBT4403LT3G
Contextual Info: MMBT4403LT1G Switching Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage

Contextual Info: MMBT4401L, SMMBT4401L Switching Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique

PZTA96ST1G

Contextual Info: PZTA96ST1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 2,4 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO −450 Vdc Collector−Base Voltage

Contextual Info: PZTA96ST1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 2,4 BASE 1 MAXIMUM RATINGS Symbol Value Unit Collector−Emitter Voltage VCEO −450 Vdc Collector−Base Voltage

MMBT4401LT1

Abstract: MMBT4401LT1G MMBT4401LT3G
Contextual Info: MMBT4401LT1G Switching Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage

Contextual Info: MMBT4403LT1G Switching Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −40 Vdc Collector −Base Voltage

Transistor BFR 38

Abstract: Q62702-F1218 marking code ne sot 23 K 193 transistor
Contextual Info: BFR 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Contextual Info: PZTA96ST1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant MAXIMUM RATINGS Rating COLLECTOR 2,4 Symbol Value Unit Collector−Emitter Voltage VCEO −450 Vdc Collector−Base Voltage

Transistor BFR 90

Abstract: F1510 Q62702-F1510 Transistor BFR 900mhz 193W
Contextual Info: BFR 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

wcs10

Abstract: SMMBT4401LT1G
Contextual Info: MMBT4401L, SMMBT4401L Switching Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique

BCW72LT1G

Abstract: 1N916 MPS3904
Contextual Info: BCW72LT1G General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 45 Vdc Collector −Base Voltage

marking GG

Abstract: marking code 604 SOT23
Contextual Info: NPN Silicon RF Transistor BFR 93P • For low -distortion broadband am plifiers up to 1 GHz at collector currents from 2 to 30 mA. c ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Package

BFR 182 transistor

Abstract: BFR 67 Transistor BFR 67
Contextual Info: BFR 182 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, high gain broadband amplifiers. Features D Low noise figure D High power gain 1 2 3 94 9280 Marking: 182 Plastic case SOT 23 1 = Collector; 2 = Base; 3 = Emitter

Transistor BFR 67

Contextual Info: BFR 183 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, high gain broadband amplifiers. Features D Low noise figure D High power gain 1 2 3 94 9280 Marking: RH Plastic case SOT 23 1 = Collector; 2 = Base; 3 = Emitter