193W Search Results

07027

Abstract: 1.0037
Contextual Info: SIEMENS BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • ¿r = 8GHz F =1.3dB at 900MHz Package 193W SOT-343 RCs Q62702-F1577 1= E 2=C 3=E CÛ !l ESP: Electrostatic discharge sensitive device, observe handling precaution!

Transistor BFR 90

Abstract: F1510 Q62702-F1510 Transistor BFR 900mhz 193W
Contextual Info: BFR 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Q62702-F1577

Abstract: 193W
Contextual Info: BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

q1221

Contextual Info: SIEMENS BFR 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • f j = 8GHz F = 1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! 1= B Package H

Transistor BFR 135

Abstract: Transistor BFR Transistor BFR 35 transistor K 1412
Contextual Info: SIEMENS BFR 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • f f = 8GHz F = 1.3dB at 900MHz 1=B 11 m Q62702-F1510 o li RCs CO BFR 193W 10 ESP: Electrostatic discharge sensitive device, observe handling precaution!

BFR 450

Abstract: VSO05561 Transistor BFR 35
Contextual Info: BFR 193W NPN Silicon RF Transistor 3
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

SIEMENS BST 68

Abstract: SIEMENS BST 68 L
Contextual Info: SIEMENS BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

Contextual Info: BFP 193W NPN Silicon RF Transistor 3
For low noise, high-gain amplifiers up to 2 GHz 4
For linear broadband amplifiers
fT = 8 GHz F = 1.3 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

BDP 284

Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529
Contextual Info: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

S4 78a DIODE schottky

Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

mini fan SUNON

Abstract: UF3H3-700 UF3F3-700 UF3A3-500 UF3C3-500 UB3C3-500
Contextual Info: Mighty Mini Fan & Blower Model Numbering System UF 3 8 3 - 1 00 Running No. 0~9 , A~Z PIN Type 1: FPCB Connecter 3rd F type 5: 3 Lead Wires (3rd F type) 7: 2 Lead Wires Mighty Mini Thickness 3: 3mm 5: 5mm Size 8: 8mm 9: 9mm A: 10mm C: 12mm F: 15mm H: 17mm

LM293WYD

Contextual Info: 193W, LM293W, LM393W Low power dual voltage comparators Features • Wide single supply voltage range or dual supplies: +2 V to +36 V or ±1 V to ±18 V ■ Very low supply current 0.4 mA independent of supply voltage (1 mW/comparator at +5 V) ■ Low input bias current: 25 nA typ

diode S6 78A

Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
Contextual Info: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14

Contextual Info: SWITCH SYSTEM PRODUCT BRIEF IS5024 36-port Non-blocking Unmanaged 40Gb/s InfiniBand Switch System The IS5024 unmanaged switch system provides the highestperforming fabric solution in a 1U form factor by delivering 2.88Tb/s of non-blocking bandwidth with 100ns port-to-port latency.

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

MC140818

Abstract: 6818A mc14880 BD701 chip BD701 MC146818A MC146805E2 C3870 S2000 ami s2000
Contextual Info: MC146818A I Advance I Information CMOS I \ REAL-TIME CLOCK PLUS RAM RTC The MC146818A Real-Time Clock plus RAM is a peripheral device which includes the unique MOTEL concept for use with various microprocessors, microcomputers, and larger computers. This part

WYLEX

Abstract: carlo gavazzi SP 115 230
Contextual Info: domestic commercial industrial circuit protection Founded in 1897, Wylex introduced the first ‘consumer unit’ to the electrical industry, this original design was the forerunner to the ‘Standard Range’, which is still in wide use today across the world.

Class 130(B) transformer

Abstract: 32383X XXX0010
Contextual Info: REVISIONS REV. Classification MIL-PRF-27 Grade: MIL-PRF-27 Class: Maximum Ambient Temperature: D E S C R IP T IO N DATE BY 6 S 130° C 105° C MIL-STD-981 Quality Assurance Provisions Class Description Drawing Number C Commercial Parts 32383-30 B Group A Inspection 32383-31B

8 pin diagram 393w

Abstract: 393w 393WY Part Marking STMicroelectronics TSSOP8 q001 DIP8 and so Package MARKING AAA TSSOP8 LM193W LM193WD LM293W
Contextual Info: 193W, LM293W, LM393W Low power dual voltage comparators Features • Wide single supply voltage range or dual supplies: +2 V to +36 V or ±1 V to ±18 V ■ Very low supply current 0.4 mA independent of supply voltage (1 mW/comparator at +5 V) ■ Low input bias current: 25 nA typ

813S

Abstract: L-93WEYC L-93WEYW L-93WEGC L-93w L-813SR
Contextual Info: Kingbright 10mm SUPER BRIGHT BIG LAMPS L-813SR SUPER BRIGHT RED Features Package Dimensions •ULTRA BRIGHTNESS. • 10mm DIAMETER BIG LAMP. •W ID E VIEWING ANGLE. • I.C. COMPATIBLE. • BOTH DIFFUSED AND WATER CLEAR LENS ARE AVAILABLE. • RELIABLE AND RUGGED.

bcm 4330

Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Contextual Info: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

2907A PNP bipolar transistors

Abstract: diode S6 78A MMIC SOT 363 s1140 DIODE TA 70/04 2907A PNP bipolar transistors datasheet Diode BAW 62 TRANSISTOR BC 158 baw 92 68W SOT
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2