TRANSISTOR BFR 38 Search Results

Transistor BFr 99

Abstract: Transistor BFR 96 transistor 2sc 548
Contextual Info: 2SC D .- . • . - , -„-,r— - . .» - - 1— — -. -■ ~. fl235bOS QQQMbbS 3 M S I E G T-V-fcJ NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIEN6ESELLSCHAF T -j-— BFR 14 C D ! BFR 14 C is an epitaxial NPN silicon planar microwave transistor in hermetically sealed

ABE 422

Abstract: Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721
Contextual Info: asc » • S23SbOS QOOHbS? T H S I E G { NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high

Transistor BFR 96

Abstract: Transistor BFR 30 bfr 547 Transistor BFR 191 silicon npn planar rf transistor sot 143 SOT-23R BFR 970 ZO 103 Telefunken Electronic BFR92
Contextual Info: BFR 92 / BFR 92 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR92 Marking: P1

Transistor BFR 30

Abstract: silicon npn planar rf transistor sot 143 zo 103 ma BFR 67 BFR93 bfr 705 BFR 30 transistor Transistor BFR 14 Transistor BFR 35 ZO 103
Contextual Info: BFR 93 / BFR 93 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency 1 2 1 3 3 94 9280 BFR93 Marking: R1

BFR34A

Abstract: bfr34 Transistor BFR34a Transistor BFR 35 Transistor BFR 80 Transistor BFR 50 Transistor BFR 90 BFR 30 transistor Transistor BFR 30 BFR 80
Contextual Info: BFR 34, BFR34A NPN Transistor for low-noise RF amplifier applications P re lim in a ry d a ta BFR34 and BFR 34A are epitaxial NPN silicon planar UHF transistors in a plastic case 5 0B 3 , DIN 41867 sim. to T 0 -5 0 for use in RF amplifiers up into the GHz

BFR38

Abstract: 639 TRANSISTOR PNP BFR 38
Contextual Info: BFR 38 PNP SILICON TRANSISTOR, EPITA X IA L PLANAR TRANSISTOR PNP SILICIUM, PLANAR EPITAXIAL - T V aerial amplifiers Amplificateurs d'antenne TV V CEO -3 5 V *C - 2 0 mA h 2 ig —3 mA 25 min. fx (—3 mA) 700 MHz min. Case TO-72 — See outline drawing CB-4 on last pages

Contextual Info: NSM80100MT1G PNP Transistor with Dual Series Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications http://onsemi.com • LCD Control Board • High Speed Switching • High Voltage Switching

1N916

Abstract: PZT3904T1G sot 23 marking code 1AM
Contextual Info: PZT3904T1G General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage

Contextual Info: MMBT8099LT1G Amplifier Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 80 Vdc Collector-Base Voltage

AYW marking code IC

Abstract: PZTA92T1G PZTA92T1 PZTA92T1 marking transistor P2D
Contextual Info: PZTA92T1 High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant MAXIMUM RATINGS TC = 25°C unless otherwise noted Rating Symbol Value Unit Collector-Emitter Voltage VCEO

m6c marking code

Abstract: MMBFU310LT1G M6C sot-23
Contextual Info: MMBFU310LT1G JFET Transistor N−Channel Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant 2 SOURCE 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage

Contextual Info: MBT2222ADW1T1G General Purpose Transistor NPN Silicon Features • Moisture Sensitivity Level: 1 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 3 (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage

Contextual Info: MMBT4401L, SMMBT4401L Switching Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique

Contextual Info: MMBT6520LT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −350 Vdc Collector −Base Voltage

MARKING 3NP

Abstract: NSM80101MT1G
Contextual Info: NSM80101MT1G NPN Transistor with Dual Series Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com Typical Applications • LCD Control Board • High Speed Switching • High Voltage Switching

mmbt4401lt1g

Abstract: MMBT4401LT1 MMBT4401LT3G
Contextual Info: MMBT4401LT1G Switching Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 40 Vdc Collector −Base Voltage

Contextual Info: NSM80101MT1G NPN Transistor with Dual Series Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications http://onsemi.com • LCD Control Board • High Speed Switching • High Voltage Switching

marking code P1D

Abstract: AYW marking code IC PZTA42T1 PZTA42T1G 306 marking code transistor
Contextual Info: PZTA42T1 High Voltage Transistor Surface Mount NPN Silicon http://onsemi.com Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS TC = 25°C unless otherwise noted Rating Symbol Value Unit Collector-Emitter Voltage

MMBT3904LT1G

Abstract: MMBT3904LT3G MMBT3904LT1 MARKING 1AM 1N916 sot-23 Marking 1am
Contextual Info: MMBT3904LT1G General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage Rating VCEO 40 Vdc Collector −Base Voltage

Transistor BFR 38

Abstract: Q62702-F1218 marking code ne sot 23 K 193 transistor
Contextual Info: BFR 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

MMBT5087LT1G

Contextual Info: MMBT5087LT1G Low Noise Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −50 Vdc Collector −Base Voltage

Contextual Info: MMBT3904L, SMMBT3904L General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • • http://onsemi.com Compliant AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique

mmbt3904l

Abstract: MMBT3904LT3G SMMBT3904LT1G transistor marking code 1am
Contextual Info: MMBT3904L, SMMBT3904L General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS • • http://onsemi.com Compliant AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique

sot-323 code 50k

Contextual Info: MMBT4401WT1G Switching Transistor NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model; 4 kV, • http://onsemi.com Machine Model; 400 V These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR