BFR34 Search Results

BFR193L3

Abstract: BFR340L3 marking FA
Contextual Info: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 1 • High insertion gain 2 • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

BFR34* transistor

Abstract: transistor k 4213 BFR340F C5 MARKING TRANSISTOR
Contextual Info: BFR340F NPN Silicon RFTransistor Preliminary data
Low voltage/ low current operation
Transistor frequency of 14 GHz
High insertion gain 2 3
Ideal for low current amplifiers and oscillators 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFR34A

Abstract: bfr34 Transistor BFR34a Transistor BFR 35 Transistor BFR 80 Transistor BFR 50 Transistor BFR 90 BFR 30 transistor Transistor BFR 30 BFR 80
Contextual Info: BFR 34, BFR34A NPN Transistor for low-noise RF amplifier applications P re lim in a ry d a ta BFR34 and BFR 34A are epitaxial NPN silicon planar UHF transistors in a plastic case 5 0B 3 , DIN 41867 sim. to T 0 -5 0 for use in RF amplifiers up into the GHz

Infineon Technologies transistor 4 ghz

Abstract: BFR193L3 BFR340L3 BFR34* transistor marking FA
Contextual Info: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 • High insertion gain 1 2 • Ideal for low current amplifiers and oscillators • Pb-free RoHS compliant package 1) • Qualified according AEC Q101

transistor k 4213

Abstract: BFR340T transitor RF 98 SC75 BFR34* transistor
Contextual Info: BFR340T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
Transition frequency of 14 GHz
High insertion gain 2
Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR340F NPN Silicon RF Transistor* • Low voltage/ low current operation • Transition frequency of 14 GHz 2 3 1 • High insertion gain • Ideal for low current amplifiers and oscillators • Pb-free RoHS compliant package 1) • Qualified according AEC Q101

marking FA

Abstract: BFR340T
Contextual Info: BFR340T NPN Silicon RF Transistor* • Low voltage/ low current operation • Transition frequency of 14 GHz 2 3 1 • High insertion gain • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

MJE 131

Abstract: BFR340L3
Contextual Info: BFR340L3 NPN Silicon RF Transistor Preliminary data
Low voltage/ Low current operation 3
Transition frequency of 14 GHz
High insertion gain 1
Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFR340F NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation 2 3
Transition frequency of 14 GHz
High insertion gain 1
Ideal for low current amplifiers and oscillators ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFR340F

Abstract: AN077 BFR340F TSFP-3
Contextual Info: BFR340F NPN Silicon RF Transistor • General purpose Low Noise Amplifier • Ideal for low current operation 2 3 1 • High breakdown voltage enables operation in automotive applications • Minimum noise figure 1.0 dB @ 1mA,1.5V,1.9GHz • Small package 1,2 x 1,2 mm 2 with visible leads

2.4 ghz FM RECEIVER CIRCUIT DIAGRAM

Abstract: RF pcb antenna 434 schematic diagram of FM radio FM Transceiver IC fm radio pcb AN175 AN200 BFR340F C166 RF Resistor 50 OHM MP
Contextual Info: L o w C o s t F M R a d i o L NA u s i n g BFR340 F Mobile Phone Applications App lication No te AN200 Revision 1.1, 2010-08-17 RF and Protect i on Devi ces Edition 2010-08-17 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG

3904 ic

Abstract: 3904 NPN k 4213 transistor k 4213 BFR340L3
Contextual Info: BFR340L3 NPN Silicon RF Transistor Preliminary data
Low voltage/ Low current operation 3
Transition frequency of 14 GHz
High insertion gain 1
Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFR340F

Contextual Info: BFR340F NPN Silicon RF Transistor* • Low voltage/ low current operation • Transition frequency of 14 GHz 2 3 1 • High insertion gain • Ideal for low current amplifiers and oscillators • Pb-free RoHS compliant package 1) • Qualified according AEC Q101

Transistor BFr 99

Abstract: Transistor BFR 96 TFC 718 S tfc 718 BFR34A Transistor BFR 38 TRANSISTOR 2SC 169 6620 bfr34 2N6620
Contextual Info: ÍSIEû ESC D • fl235bDS QQQMb70 2 NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers ^ _ _ BFR34A 2 N 6620 SIEMENS AKTIEN6ESELLSCHAF BFR 34 A is an epitaxial NPN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 DIN 41 867 intended for use in RF amplifiers up to the GHz range,

K 3677

Contextual Info: BFR340T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
Transition frequency of 14 GHz
High insertion gain 2
Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

infineon marking code L2

Contextual Info: BFR340T NPN Silicon RF Transistor* • Low voltage/ low current operation • Transition frequency of 14 GHz 2 3 1 • High insertion gain • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

K 3677

Abstract: marking FA
Contextual Info: BFR340L3 NPN Silicon RF Transistor Preliminary data
Low voltage/ Low current operation 3
Transition frequency of 14 GHz
High insertion gain 1
Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!

schematic diagram of FM radio

Abstract: AN205 fm receiver circuit using ic with all component d diagram circuit mp3 radio fm FM RADIO RECEIVER circuit diagram AN175 BFR340F C166 Car remote keyless entry schematic diagram Microstrip Antennas
Contextual Info: L o w C o s t F M R a d i o L NA u s i n g BFR340 F Matched to 50 Ohm at I nput and Ou tput App lication No te AN205 Revision 1.2, 2010-08-19 RF and Protect i on Devi ces Edition 2010-08-19 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG

Contextual Info: BFR340L3 Low Noise Silicon Bipolar RF Transistor • Low voltage/ Low current operation • Transition frequency of 14 GHz • High insertion gain • Ideal for low current amplifiers and oscillators • Pb-free RoHS compliant and halogen-free thin small

TRANSISTOR MARKING NK

Abstract: transistor bf 271 p 605 transistor equivalent BFR340T
Contextual Info: BFR340T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
Transition frequency of 14 GHz
High insertion gain 2
Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

marking FA

Contextual Info: BFR340L3 NPN Silicon RF Transistor Preliminary data
Low voltage/ Low current operation 3
Transition frequency of 14 GHz
High insertion gain 1
Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFR340F

Abstract: G1217
Contextual Info: BFR340F NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation 2 3
Transition frequency of 14 GHz
High insertion gain 1
Ideal for low current amplifiers and oscillators ESD: Electrostatic discharge sensitive device, observe handling precaution!

marking code IC .ftf

Abstract: BFR340T GPS05996
Contextual Info: BFR340T NPN Silicon RF Transistor 3 Target Data • • • • Low Voltage/ Low Current Operation High Transistion Frequency of 16GHz High Insertion Gain Ideal for Low Current and Amplifiers and Oscillators 2 1 VPS05996 ESD: Electrostatic discharge sensitive device,

BFR340F

Abstract: E6327
Contextual Info: BFR340F NPN Silicon RF Transistor Preliminary data • Low voltage/ low current operation 2 3 • Transition frequency of 14 GHz • High insertion gain 1 • Ideal for low current amplifiers and oscillators ESD: Electrostatic discharge sensitive device, observe handling precaution!