TRANSISTOR BF 520 Search Results

transistor Bf 444

Abstract: transistor bf 324 BF324 pnp vhf transistor TRANSISTOR Bf 522 f324
Contextual Info: 25C » • ô53SbQS GQa4H73 ü « S I E G [.• PNP Silicon RF Transistor SIEMENS AKTIEN ÛESELLSCH AF '3 T -? / -'? BF 324 D.- for large-signal VHF stages BF 324 is an epitaxial PNP silicon planar transistor in TO 92 plastic package TO A 3

BF324

Abstract: oms 450 Q62702-F311 S420
Contextual Info: 25C » • ô53SbQS GGQ4H73 0 WÊZIZG [; PNP Silicon RF Transistor SIEMENS AKTIENÛESELLSCHAF '3 T -ïl-tl BF 324 D.- fo r large-signal V H F stag es BF 3 2 4 is an epitaxial PNP silicon planar transistor in TO 9 2 plastic package TO A 3

transistor M-226

Abstract: CPH6701
Contextual Info: CPH6701 SPICE PARAMETER PNP SMALL-SIGNAL TRANSISTOR model : Gummel-Poon Value Parameter 520 f IS 420.0 BF 0.99 NF 7.5 VAF 1 IKF 13.4 f ISE 1.9 NE 100.40 BR 1.00 NR 5 VAR 273.9m IKR Unit A V A A V A Parameter ISC NC RB IRB RBM RE RC XTB XTI EG Value 651 f 1.10

BF167

Abstract: transistor BF 37
Contextual Info: TELEFUNKEN ELECTRONIC aie D fi^SDO^b OOOSlbO B F 167 TTiOJlIFiyiKlCSiKI electronic Creative Techrxriogtes Silicon NPN Planar RF Transistor Applications! Controlled video IF amplifier stages in common emitter configuration Features: • Small feedback capacitance

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

CPH3123

Contextual Info: CPH3123 SPICE PARAMETER PNP Bipolar Transistor model : Gummel-Poon Parameter Value IS 520.0f NF 1 IKF 1 NE 2 NR 1 IKR 850.0m NC 2 IRB 40.00m RE 42.00m XTB 1.6 XTI 3 VJE 750.0m TF 350p VTF 1.000K PTF VJC 540.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

APC UPS CIRCUIT DIAGRAM rs 1500

Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
Contextual Info: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO

Contextual Info: SIEMENS SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f j = 45 GHz

Transistor BC 1078

Abstract: uln2004 application note UDN2983A equivalent UDN2580A equivalent replacement M5266P TD62083 uln2803 REPLACEMENT FOR relay driver ic ULN2803 m54586p ULN2032A PA2003C
Contextual Info: Interface Driver ICs PRODUCT GUIDE In recent years, dedicated custom ICs ASICs meeting specifications of various users have been widely used mainly for controlling electronic equipment. On the other hand, general purpose ICs, such as operational amplifiers, regulators,

Infineon technology roadmap for mosfet

Abstract: germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor
Contextual Info: Small CHIPS for big visions Silicon Discretes www.infineon.com Never stop thinking. INTRODUCTION O n e o f t h e w o r l d ' s major manufacturers of radio frequency RF components, Infineon Technologies is committed to innovative technologies and products, flexible service and the very best supply conditions for customers and partners.

transistors BC 543

Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

transistor b 1238

Abstract: Q62702-F1794 transistor bf 520 transistor bfp 520
Contextual Info: SIEGET 45 BFP 520 NPN Silicon RF Transistor Preliminary data 3 • For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz 2 • Transition frequency fT = 45 GHz 1

ev 2816

Abstract: ic rom 2816 VPS05605 transistor bfp 520 gummel
Contextual Info: SIEGET
45 BFP 520 NPN Silicon RF Transistor 3
For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB
For oscillators up to 15 GHz 2
Transition frequency fT = 45 GHz 1
Gold metallization for high reliability

VPS05605

Contextual Info: SIEGET
45 BFP 520 NPN Silicon RF Transistor Preliminary data 3
For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB
For oscillators up to 15 GHz 2
Transition frequency fT = 45 GHz 1
Gold metallization for high reliability

laser diode spice modeling

Abstract: laser diode spice model simulation spice ATF 10136 atf-10136 spice MSA-09 ATF13136 mmic a20 MSA-0311 AT-41500 S parameters for ATF 10136
Contextual Info: Application Design Tools Services and Applications Literature Hewlett-Packard customers are supported by an Applications Engineering Department. The applications engineering staff investigates circuit applications, design techniques, and device performance. The results of these

2SC3953-SPICE

Abstract: 2sa1538 spice 2sc3953 spice 2SC5610 MJE-360 2SC4548 2sk4096 2SB631K 2SC5706 equivalent 2SC2911-SPICE
Contextual Info: 12A02CH-SPICE -* SANYO 12A02CH SPICE PARAMETER * .LIB 12A02CH * DATE : 2006/12/26 * Temp = 27 deg .MODEL 12A02CH PNP +NF = 1.0 IS VAF = 110.0f

2907A PNP bipolar transistors

Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

tc9137p

Abstract: TC9137BP TD6301AP E310 fet tc9137 td6104 td6301 td6301ap toshiba E310D TC9137BF
Contextual Info: 't O S H ^ T e LECTRONIC „ _ 02 D e | ciQc17E47~0017ciDci o | -. — • ; T-5o"n C-MOS LSI FOR STATIC TYPE DIGITAL TUNING SYSTEM. Unit in mm TC9137BP/BF are LSI for PLL synthesizer type digital tuning system with PLL circuit and control « circuit centralized'into one chip.

LCS702

Abstract: LCS701 LCS708 LCS705 32 inch LCD LG TV SCHEMATIC lcs700 S2C71 LCS700-708 lg lcd tv POWER SUPPLY SCHEMATIC PI-6764-051412
Contextual Info: LCS700-708 HiperLCS Family Integrated LLC Controller, High-Voltage Power MOSFETs and Drivers Product Highlights Features • LLC half-bridge power stage incorporating controller, high and low-side gate drives, and high-voltage power MOSFETs • Eliminates up to 30 external components

Contextual Info: LCS700-708 HiperLCS Family Integrated LLC Controller, High-Voltage Power MOSFETs and Drivers Product Highlights Features • LLC half-bridge power stage incorporating controller, high and low-side gate drives, and high-voltage power MOSFETs • Eliminates up to 30 external components

diode S6 78A

Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
Contextual Info: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14

S4 78a DIODE schottky

Abstract: diode S6 78A BC 148 TRANSISTOR DATASHEET transistors BC 543 TRANSISTOR BC 158 BC 158 is npn or pnp 68W npn TRANSISTOR BC s6 78a baw 92
Contextual Info: Selection Guide Table of Contents Page RF-Transistors and MMICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 MOS Field-Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2