TRANSISTOR BF 459 Search Results

Transistor B C 458

Abstract: c 458 c transistor transistor c 458 transistor bf 458 transistor 458 NPN transistor 458 458 transistor transistor C 459 transistor cb 458 LM 458
Contextual Info: *BF 457 *BF 458 *BF 459 NPN SILICON TRANSISTOR, PLANAR TRANSISTOR NPN SILICIUM, PLANAR % Preferred device Dispositif recommandé BF 457, BF 458 and BF 459 are plastic encapsulated transistor designed for video output stages in black and white and color TV receivers. These transistors feature

transistor bf 458

Abstract: transistor bf458 transistor bf 459
Contextual Info: 25C D • fl235b as 00044^5 T H S IE 6 ' rBF 457 BF 458 BF 459 NPN Silicon RF Transistors _"'-5C 0 4 4 9 5 SIE M E N S A K T IEN G ESE LLSC H A F for video and AF output stages BF 457, BF 4 58 and BF 4 5 9 are epitaxial NPN silicon planar transistors in TO 126 plastic

m03 transistor

Abstract: NE AND micro-X nec 08e 2SC5434 NE680 NE680M03 S21E BF179 bjt npn m03 low noise transistor bF 179
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE680M03 OUTLINE DIMENSIONS Units in mm FEATURES • NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT:

S21E

Abstract: UPA809T UPA809T-T1 NE688 npn dual emitter RF Transistor Drive Base BJT 38E-15 transistor mje 350
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA809T OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA

bjt npn m03

Abstract: BR 123 m03 bjt npn 2SC5437 NE688 NE688M03 S21E
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M03 OUTLINE DIMENSIONS Units in mm FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz • LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz 1.4±0.05 0.8±0.1 2 1.4 ±0.1 0.45 (0.9) TS • • PACKAGE OUTLINE M03

UPA826TC-T1

Abstract: BF109 NE685 S21E UPA826TC vaf meter
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA826TC FEATURES DESCRIPTION • SMALL PACKAGE STYLE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE: Just 0.55 mm high The UPA826TC contains two NE685 NPN high frequency

transistor Bf 444

Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA

transistor eft 323

Abstract: EFT 323 transistor BC-108 6001-015 service-mitteilungen bc149 EFT323 bauelemente DDR OA1180 TRANSISTOR BC 187
Contextual Info: S E R V I C E - MI TTEILUNGEN r a d i o -television DATUM: Juli 1973 VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN AUSGABE: 8/73 Neu« Import - Geräte LUDWIK und JUBILAT - Rundfunkempfänger aus der VR Polen Aua der VR Polen werden o.g. Rundfunkempfänger importiert. Beide Ge­

BJT characteristics

Abstract: NE68135 NE AND micro-X 2SC4227 2SC5007 2SC5012 NE681 NE68100 NE68118 NE68119
Contextual Info: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e

transistor 8730

Abstract: UPA800T NPN Transistor 8440 NE680 S21E UPA800T-T1 TRANSISTOR C 6090 npn mje 3007 BJT 5240
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA800T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz • HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz • EXCELLENT LOW VOLTAGE, LOW CURRENT

Contextual Info: What IL'tíM HEWLETT PACKARD Avantek Products Thin-Film Cascadable Amplifier 10 to 2000 MHz Technical Data UTO/UTC 2026 Series Features • Frequency Range: 10 to 2000 MHz • High Output Power: +20.5 dBm Typ • Medium Gain: 15.0 dB (Typ) • Temperature Compensated

kf 203 transistor

Abstract: 08E-12 IC 2030 PIN CONNECTIONS bjt 522 DATASHEET OF BJT 547 NE AND micro-X 2SC4227 2SC5007 BF 194 npn transistor NE681
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz E • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz B • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST 35 MICRO-X 00 (CHIP) DESCRIPTION

kf 13002

Abstract: 2SC5787 TRANSISTOR 9642 NE894M13 NE894M13-A NE894M13-T3-A S21E rf npn power transistor c 10-12 ghz s-1125
Contextual Info: NPN SILICON TRANSISTOR NE894M13 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M13 LOW Cre • UHSO 25 GHz PROCESS 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 • 0.35 LOW NOISE, HIGH GAIN 1.0+0.1 ñ0.05 IDEAL FOR > 3 GHz OSCILLATORS • 0.7±0.05

mje 1303

Abstract: BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X NE680
Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

diagram of LED matrix display

Abstract: dot led display large size with circuit diagram 2708 eprom 1206 cms 1206 cms diode 2581 v amplifier 30-key matrix board CT 1975 circuit EE-25 op amp current booster using transistors
Contextual Info: HD66727 Low-Power Dot-Matrix Liquid Crystal Display Controller/Driver with Key Scan Function Description The HD66727, dot-matrix liquid crystal display controller and driver LSI incorporating a key scan function, displays alphanumerics, katakana, hiragana, and symbols. It can be configured to drive a dotmatrix liquid crystal display and control key scan functions under the control of an I2C bus or a clocksynchronized serial microprocessor. A single HD66727 is capable of displaying up to four 12-character

LB 11899

Abstract: NE851M13-T3-A of IC 7476 in file bf166 IC 2262 AF 2SC5801 NE851M13 S21E NEC semiconductor 9135 Features of IC 7476
Contextual Info: NEC's NPN SILICON TRANSISTOR NE851M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 LOW PUSHING FACTOR 0.35 • 0.7 LOW PHASE NOISE 1.0+0.1 ñ0.05 IDEAL FOR ≤ 3 GHz OSCILLATORS • 0.7±0.05

NE856

Abstract: 2sc3355 Micro-X Marking 865 NE AND micro-X NE85632 NEC NE85635 2SC4226 2SC5006 2SC5011 NE85600
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST rs e

ST 3055

Abstract: "routing tables"
Contextual Info: HD66705U Low-Power Dot-Matrix Liquid Crystal Display Controller/Driver HITACHI Description The H D 66705U dot-m atrix liquid crystal display controller and driver LSI displays alphanum erics, katakana, hiragana, and symbols. It can be configured to drive a dot-matrix liquid crystal display under the

LB 122 transistor To-92

Abstract: NE85600 NE85632 Mje 1532 NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85635
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 00 CHIP 35 (MICRO-X) 32 (TO-92)

2SC5004

Abstract: NE58219 S21E on 5295 transistor 152.01 23E16
Contextual Info: NEC's NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD FEATURES NE58219 OUTLINE DIMENSIONS Units in mm • HIGH fT: 5 GHz TYP at VCE = 5 V , IC = 5 mA, f = 1 GHz PACKAGE OUTLINE 19 • LOW Cre: 0.9 pF TYP at VCB = 5 V, IE = 0, f = 1 MHz 1.6±0.1

k3882

Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
Contextual Info: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d

pt 6964

Abstract: UPA833TF MJE 13031 NE685 NE68530 NE688 NE68830 S21E UPA833TF-T1 UPA836TF
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm Package Outline TS06 (Top View) LOW NOISE: Q1:NF = 1.7 dB TYP at f = 2 GHz, VCE = 1 V, lc = 3 mA 2.1 ± 0.1 1.25 ± 0.1 Q2:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA

transistors ON 4673

Abstract: NE685 NE68530 NE856 NE85630 S21E UPA832TF UPA835TF UPA835TF-T1 pin IC 7479
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES • OUTLINE DIMENSIONS Units in mm LOW NOISE: Q1:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA Package Outline TS06 (Top View) 2.1 ± 0.1 Q2:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA

NESG2030M04

Abstract: 2SC5761 NE662M04 NESG2030M04-T2 S21E nec 2401 wireless communication ic 7848
Contextual Info: NPN SiGe HIGH FREQUENCY TRANSISTOR NESG2030M04 FEATURES • SiGe TECHNOLOGY: fT = 60 GHz Process • LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 20 dB at 2 GHz • NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm