TRANSISTOR BF 44 Search Results

BF115

Abstract: BF 145 transistor transistor bf 175 transistor bf 910 transistor 115 thomson tuners C22E transistor CD 910 oscillateur V12EC
Contextual Info: BF 115 NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L The NPN plan epitaxial transistor BF 115 is intended for use in front-end and oscillatormixer stages of FM tuners and generally for all HF uses. Le transistor NPN " plan é p ita xia l" BF 115 est desti­

transistor Bf 444

Abstract: transistor bf 324 BF324 pnp vhf transistor TRANSISTOR Bf 522 f324
Contextual Info: 25C » • ô53SbQS GQa4H73 ü « S I E G [.• PNP Silicon RF Transistor SIEMENS AKTIEN ÛESELLSCH AF '3 T -? / -'? BF 324 D.- for large-signal VHF stages BF 324 is an epitaxial PNP silicon planar transistor in TO 92 plastic package TO A 3

BF970

Contextual Info: SIEMENS PNP Silicon RF Transistor BF 970 • For UHF mixer and oscillator stages Type Marking Ordering Code BF 970 - Q62702-F650 Pin Configuration 1 2 3 B C Package1* E T-plast Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage Veto 35

transistor bf 185

Abstract: BF185 bf 185 BF 185 transistor coe br
Contextual Info: BF 185 w Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar R F Transistor Anwendungen: Allgem ein und HF-Verstärkerstufen bis 100 MHz General and RF am plifier stages up to 100 MHz Applications: Besondere Merkmale: • Rauschmaß 4 dB

BD130

Abstract: BD 144 transistor TA 7311 transistor transistor Bf 444 BD 130 Y transistor Bd 130 NPN transistor BD 468 S bd 130 7311 transistor S 7311 transistor
Contextual Info: BD130 NPN SILICON TRANSISTOR, HOMOBASE T R A N S IS T O R N P N S IL IC IU M , HO M O B A S E - L F large signal power am plification Amplificateur BF grands signaux de puissance - High current switching Commutation fort courant • Regulated DC power supply

zq 405-MF

Abstract: siemens 30 090 GP 819 SAA 1006 saa 1070
Contextual Info: BSE D • Ö23b320 QQlb^BO T M S I P NPN Silicon RF Transistor SIEMENS/ SPCLi SEMICONDS T'SI'I? BF P193 • For low-noise, high-gain amplifiers up to 2 GHz. • For linear broadband amplifiers. • ff = 8 GHz. F = 1.2 dB at 800 MHz. ESD: Electrostatic discharge sensitive device, observe handling precautions!

Tfk 680

Abstract: TFK 201 tfk 140 TFK 175 tfk 830 tfk 145 BF 184 transistor TFK 03 BF184 6 tfk 145
Contextual Info: V BF 184 Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon N P N Epitaxial Planar RF Transistor Anwendungen: A llg e m e in und g e re g e lte H F-V erstärke rstu fe n bis 100 M H z Applications: G e ne ra l and c o n tro lle d R F am p llfie r s ta g e s up to 100 M H z

SMM20P10

Abstract: n5080
Contextual Info: J J S jS S ä S M M 20R 10 -t- s ^-ì -3, P-Channel Enhancement Mode Transistor T Q -2 0 4 A A BOTTOM VIEW T O -3 PRODUCT SUMMARY V(Bf |DSS T -100 0.20 •d (A) -20 1 DRAIN (CASE) 2 GATE 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1

41 BF transistor

Abstract: transistor BF 235 transistor bf 254 869S transistor marking code 41 BF BF869S transistor bf 871s BF871S bf869s Transistor transistor bf 44
Contextual Info: a l TELEFUNKEN ELECTRONIC 17E D • a^EDD^b 000^427 4 ■ AL6G BF 869 S BF 871 S IN electronic Cr»«tiv« Technologies r-33-öS* Silicon NPN Epitaxial Planar RF Transistors Applications: Video-B-class power stages in TV-receivers Features: • High reverse voltage

8ch pnp DARLINGTON TRANSISTOR ARRAY

Abstract: pnp DARLINGTON TRANSISTOR ARRAY ULN* PNP transistor array PNP DARLINGTON SINK DRIVER pnp darlington array m54586p pnp darlington array ULN uln2803 to drive 7 segment display ULS2003H nec pa2003c
Contextual Info: [ 1 ] Product Code Index [ 1 ] Product Code Index 1. IFD Family Tree Inter-Face Driver S-Driver Series TD62Sx×× Transistor-Array Series Monolithic Array Series Bipolar Transistor Array TD62××× or ULN/ULQ 2xxx DMOS Transistor Array TB62××× Multi-Chip IC Type MCT array

transistor bf 44

Abstract: transistor D 1002 MAX985 MAX986 MAX989 MAX990 MAX993 MAX994 Transistor E11 transistor BF 37
Contextual Info: * MAX985 FAMILY MACROMODELS * -* FEATURES: * Rail-to-Rail Outputs * +2.5V to +5.5V Single-Supply Operation * Available in 8-Pin SO/5-PIN SOT23-5 MAX985/MAX986 * 8-Pin SO/uMAX (MAX989/MAX990) * 14-Pin SO (MAX993/MAX994) * * * PART NUMBER

for transistor bf 245c

Abstract: BF 145 transistor transistor BF 245A BF 145 2n uhf fet micro to-237 transistor BC 310 transistor BC 321
Contextual Info: MICRO EL EC TRO NICS CORP û2 Ì F| bEHlTflfl 00DDb7S 2 N -Channel Junction Field Effect Transistors ~T ~3/-17 G EN ER A L PURPOSE M AXIM UM R A T IN G S 'd s s IraA ) TYPE V G S off) (V ) Y fs (mmhos) Ciss* Crss NF (pF) (pF) (dB) C A SE Pd NO. b v gss (mW)

ULN2003NA

Abstract: transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P
Contextual Info: [1] INDEX 1. IFD Family Tree [ 1 ] INDEX 1. IFD Family Tree [i]n t e r -@a c e g n v e r — Transistor-Array — Monolithic Bipolar Series Array Series |T r a n s i s t o r | [ A r r a y ] |DM O S| T r a n s i s t o r |A r r a y | — Multi-Chip — Module

transistor Bc 82

Abstract: B 722 P 12A3 BU902 T0126 transistor c s z 44 v
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • ô'iBDO'îb O O O W ? . TnHLtMFtLDK]BS l!?a electronic BU 902 C rta tiv e Tfccbnotoot« Silicon NPN Power Transistor r - 3 3 .-13 Application: Switching mode power supply Features: • In triple diffusion technique • Short switching time

BEL 100N TRANSISTOR

Abstract: BEL100N bel 100n transistor npn BEL 100N 2n 2222a transistor BEL100 TRANSISTOR bd 657 BF200 transistor transistor BF 245 bd115
Contextual Info: BHARAT EL EK /S E n i C O N D S Device No VC EO Volts min VcBO Volts mm DI 47E D V ebo VoHs min hFE at bias mm /max Ic mA 14353Tfl V ce V o lts 1 CM mA max P lo t mW max □□□□012 ICBO uA typ flTG • V ce Sat V o lts typ ÍT MHz typ BELI Cob pF typ

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

FET BFW 43

Abstract: MPSA 506 transistor TRANSISTOR BC 157 TRANSISTOR BC 530 transistor BF 298 BFT58 transistor mpsa 42 BFW 43 transistor transistor 2SA transistor 2 sa 72 transistor BF 257
Contextual Info: 4.2+« 4.2+* I OOOOO C MC MC MC MC M O O O 1O C Mt—i— 1 C M Oo C MC M - I I I I CMC MC MC MC M C MID ID 1 C M OO C MC M lO ID ID LOLD C MC MC M*- t-* o' ò o’ O* O 1 LOLOLOLO C MC MC MC M o d O* O 0> «—C Mr- C MC M - Ul O> > IO o o o o CO»—« —*—

ikf68

Abstract: 1159m transistor 1002 rcx 1002
Contextual Info: MAX3640 I/O Model SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic

BF265

Abstract: 29v33
Contextual Info: MAX3880 I/O Model SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic

m33 tf 130

Abstract: BF113 is373 GRS-003 GRS003 Mje 1533 1803e 203FF 1115 R1B H645
Contextual Info: Order this document by AN1400/D AN1400 Application Note MC10/100H640 Clock Driver Family I/O SPICE Modelling Kit Prepared by Todd Pearson Debbie Beckwith ECL Applications Engineering This application note provides the SPICE information necessary to accurately model system interconnect

shockley diode application

Abstract: shockley diode transistor bipolar driver schematic diode shockley shockley diode SPICE MODELS spice shockley diode SPICE MODELS AP 494 Application Note BF 494 C shockley diode datasheet
Contextual Info: Application Note 23 Issue 2 March 1996 Zetex SPICE Models Understanding Model Parameters and Applications Limitations Neil Chadderton Introduction SPICE was originally developed as a simulation tool for Integrated Circuit design SPICE being an acronym for

T2140

Abstract: chip die hp transistor 0099E planar*el BF 212 transistor
Contextual Info: HEW LETT-PACKARD/ CflPNTS b lE ]> • 4447584 Whp% H EW LETT mittm PA CK A RD 402 ■HPA Chip Outline1 Features • • • • o o m ? 1! ! AT-21400 20 GHz NPN Silicon Bipolar Oscillator Transistor Fundamental Oscillation to > 20 GHz Low Phase Noise Compared to GaAs FETs

SPICE PARAMETER, sanyo, bipolar transistor

Abstract: Spice Parameter, Bipolar Transistor transistor KF 1P NPN CPH5506 transistor 28M
Contextual Info: CPH5506_PNP SPICE PARAMETER PNP Bipolar Transistor model : Gummel-Poon Parameter Value IS 200f NF 1 IKF 370m NE 2 NR 1 IKR 215m NC 2 IRB 50m RE 48m XTB 1.3 XTI 3 VJE 680m TF 280p VTF 4 PTF VJC 500m XCJC 1 FC 500m AF 1 Temp = Date : Unit A A A A Ohm V sec V

Contextual Info: M O T O R O L A SC -CXSTRS/R F> 1 6367254 MOTOROLA SC DE|b3ti7254 XSTRS/R 96D 8 2 4 7 5 _ T ~ F □DÔ247T S | D ^ ? - 2 - 7 MAXIM UM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage