TRANSISTOR BD 800 Search Results

42t sot-23

Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
Contextual Info: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen

transistor D 2394

Abstract: f173 fp302
Contextual Info: O rd erin g number : EN 4726 _ FP302 T R :N P N E p ita x ia l P la n a r Silicon Transistor S BD :Sch o ttk y B a rrie r Diode DC-DC Converter A pplications F e a tu re s •Composite type w ith N P N transistor and Schottky barrier diode facilitates high-density mounting.

TMOS power FET

Abstract: MMFT3055VT1 TMOS E-FET MMFT3055V MMFT3055VT3 transistor BD 135
Contextual Info: MOTOROLA Order this document by MMFT3055V/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMFT3055V TMOS V SOT-223 for Surface Mount N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This

transistor BD 540

Abstract: Transistor BFT 99 Transistor BFR 39 BFW 10 fet Transistor BFR 80 Transistor BFT 10 transistor BFT 41 371b Transistor BFT 42 TRANSISTOR bd 108
Contextual Info: 6 0 9 y e a MICRO ELECTRONICS CORF D E | b [ m 7 f i a DOGObS? D | 02 82D 00657 D *7^ 12.5?“ N O. B C W 94 BCW 95 BCW 96 BCW 97 B C X 25 BCX26 B C X 40 B C X 45 BCX 46 ' ' M AXIM UM R A T IN G S V C E S A T Ul u. TYPE X P O L A R IT Y Medium Kower Am plifiers and Switches

BD 140 transistor

Abstract: MMJT9435 MOTOROLA TRANSISTOR motorola bjt
Contextual Info: MOTOROLA Order this document by MMJT9435/D SEMICONDUCTOR TECHNICAL DATA MMJT9435 Preliminary Data Sheet Bipolar Power Transistors Motorola Preferred Device PNP Silicon • Collector –Emitter Sustaining Voltage — VCEO sus = 30 Vdc (Min) @ IC = 10 mAdc

Contextual Info: Rev.5.0_00 STEP-UP, SUPER-SMALL PACKAGE, 600 kHz, PWM CONTROL or PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage source, an

pin diagram of 8355

Abstract: S-8357H50MC-NNJT2G S-8358B33MC-NQST2G S-8358B36MC-NQVT2G 3.40 pf variable capacitor 6 pin current control forward dc to dc converter S-8357B50MA-NJJT2G 8357 S-8355M50MC S-8357BxxMA
Contextual Info: Rev.6.1_00 STEP-UP, SUPER-SMALL PACKAGE, 600 kHz, PWM CONTROL or PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage source, an

MMFT2N25E

Abstract: 735 motorola make
Contextual Info: MOTOROLA Order this document by MMFT2N25E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MMFT2N25E TMOS E-FET High Energy Power FET N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently.

Contextual Info: MMJT350T1 Bipolar Power Transistors PNP Silicon Bipolar power transistorsĂare designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability. Features http://onsemi.com 0.5 AMPERE

T350 sot223

Abstract: AYW marking code IC t350 MMJT350T1 MMJT350T1G
Contextual Info: MMJT350T1 Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features 0.5 AMPERE POWER TRANSISTOR

ACT361US-T

Abstract: FSCR ic 230v dc 8a rectifier diode
Contextual Info: ACT361 Rev 8, 14-Nov-12 High Performance ActivePSRTM Primary Switching Regulator The ACT361 ensures safe operation with complete protection against all fault conditions. Built-in protection circuitry is provided for output shortcircuit, output over-voltage, line under-voltage, and

bc 357 transistor

Abstract: bc 357 transistor datasheet BCW61B BCW61C BCW61C-BC BD 140 transistor PNP Epitaxial Silicon Transistor sot-23 transistor BC 55 transistor BD 140 BCW61D
Contextual Info: BCW61B BCW61C BCW61D SURFACE MOUNT PNP SILICON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW61B Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package,

bc 357 transistor

Abstract: BCW61C-BC BCW61C transistor BC SERIES transistor BC 55 BCW61B BCW61D BC transistor series transistor W-32 Bcw61d sot23
Contextual Info: BCW61B BCW61C BCW61D w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW61B Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low level, low noise

tip 410 transistor

Abstract: transistor TIP 662 P6020 P6019 transistor BD 253 BU105 texasinstruments bu 105 TRANSISTOR bd 108 BUY69
Contextual Info: BU105 NPN SILICON POWER TRANSISTOR D E S IG N E D FOR H IG H V O L T A G E C .R .T .S C A N N IN G • • • V'c es Rating 1500 V Current Rating - 2 .5 Amps Peak Fast Switching — tp at 2 Amps 0.6 Microsecond Typical development types The data presented here ¡s o f a device under deve lopm ent, and m ay be subject to change w ith o u t notice . N o responsibi­

TRANSISTOR BD 136

Abstract: BD137 parameters BD139 BD139 h parameters power transistor bd139 TRANSISTOR BD139 BD135 BD137 BD139 circuits BD 139 & 140
Contextual Info: ON Semiconductort BD135 BD137 BD139 Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 10 WATTS

BD 104 NPN

Abstract: pnp 8 transistor array LA400 npn 8 transistor array BD+104+NPN
Contextual Info: AT&T Data Sheet oo5i 52 ^ ss Benefits • High-frequency performance, typical fr of 350 MHz for NPN and 300 MHz for PNP transistors ■ 30 volt capability ■ Low development costs ■ Quick design turnaround, typically six to eight weeks from design approval

603 transistor npn

Abstract: 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906
Contextual Info: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) Device Allegro Type Type

230V ac to 5V dc usb charger circuit

Abstract: D13005 TRANSISTOR SMD p1 DIODE SMD d8 EE20 core Flyback transformer
Contextual Info: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT36X, ACT33X Rev 2.5 Oct 2012 www.active-semi.com ActivePSR TM High Efficiency AC/DC Primary Switching Solutions Application Change Note Revision History Page 12~13 2012-Oct– 19 Rev 2.5

pnp 8 transistor array

Abstract: BD 104 NPN LA400 ARRAY resistor npn 8 transistor array transistor array pnp bD 106 transistor
Contextual Info: AT&T Data Sheet ^ ss oo5i 52 Benefits • High-frequency performance, typical fr of 350 MHz for NPN and 300 MHz for PNP transistors ■ 30 volt capability ■ Low development costs ■ Quick design turnaround, typically six to eight weeks from design approval

ADC 808

Abstract: bd 808 BD808 BD810 T1 BD 139
Contextual Info: MOTOROLA Order this document by BD808/D SEMICONDUCTOR TECHNICAL DATA BD808 BD810* Plastic High Power Silicon PNP Transistor *Motorola Preferred Device 10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90 WATTS . . . designed for use in high power audio amplifiers utilizing complementary or quasi

7974a

Abstract: 2SD2403
Contextual Info: ïr — ^ — h '> U =1 > h Silicon Transistor 2SD2403 N P N itf^ v T ^ u ^ v U ju r a « : * « « , 2 S D 2 4 0 3 t t /J 't ë fl» a a* 6 U W x '- ÿ ^ ï - * m m z i> ' p m m x ' f v i - x r m t •# U T * U , D C / D C w m m e : m m ) • K 7 < / * £ iî lC » l? T o

smd transistor 12W 13

Abstract: transistor SMD 12W MOSFET smd transistor 12W 3 pins transistor SMD 12W D13005 E D13005 D13005 transistor smd transistor 12W 55
Contextual Info: ACT365 Rev 2, 10-Jan-13 High Performance ActivePSRTM Primary Switching Regulator The ACT365 ActivePSRTM is optimized for high performance, cost-sensitive applications, and utilizes Active-Semi’s proprietary primary-side feedback architecture to provide accurate constant

NSS40300MZ4T1G

Abstract: NSS40300MZ4 NSS40300MZ4T3G
Contextual Info: NSS40300MZ4 Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed

NSS40301MZ4

Abstract: NSS40301MZ4T1G NSS40301MZ4T3G
Contextual Info: NSS40301MZ4 Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed