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    TRANSISTOR BD 680 Search Results

    TRANSISTOR BD 680 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    TRANSISTOR BD 680 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BD681

    Abstract: bd681 TRANSISTOR transistor bd681 NPN Transistor VCEO 80V 100V DARLINGTON BD679A BD677A A1679 BD675A 679A BD677A FAIRCHILD SEMICONDUCTOR
    Contextual Info: BD675A/677A/679A/681 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD676A, BD 678A, BD 680A and BD 682 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V


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    bd675a/677a/679a/681bd676abd678abd680a+11bd682bd675abd677abd679abd681bd681 transistortransistor bd681npn transistor vceo 80v 100v darlingtona1679679abd677a fairchild semiconductor PDF

    Contextual Info: BD675A/677A/679A/681 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD676A, BD678A, BD 680A and BD 682 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit 45 V : BD677A


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    bd675a/677a/679a/681bd676abd678abd677a+3bd679abd675abd681 PDF

    BD682

    Abstract: BD676A BD678A B0680 BD680A B0682 transistor Bd682 BD675A BD677A BD679A
    Contextual Info: BD676A/678A/680A/682 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD675A, BD 677A, BD 679A and BD681 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage


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    bd676a/678a/680a/682bd675abd677abd679a+8bd681bd676abd678abd680abd682b0680b0682transistor bd682 PDF

    pin configuration transistor bd140

    Abstract: 2SD669 equivalent BUV44 bd140 equivalent transistor MJE15020 bd140 equivalent BD250C EQUIVALENT RCA122 2N6045 NPN POWER DARLINGTON TRANSISTOR BD 136
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium Power Silicon PNP Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 Min @ IC = 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139


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    bd136bd138bd140bd140-10+16tip73btip74tip74atip74btip75tip75apin configuration transistor bd1402sd669 equivalentbuv44bd140 equivalent transistormje15020bd140 equivalentbd250c equivalentrca1222n6045 npn power darlingtontransistor bd 136 PDF

    Contextual Info: BD676A/678A/680A/682 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD675A, BD677A, BD 679A and BD681 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit - 45 V : BD678A


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    bd676a/678a/680a/682bd675abd677abd681+4bd678abd680abd676abd682 PDF

    st bd681 transistor

    Abstract: power transistor bd
    Contextual Info: BD676A/678A/680A/682 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER DARLINGTON TR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD675A, BD677A, BD679A and BD681 respectively ABSOLUTE MAXIMUM RATINGS Characteristic C o lle c to r B ase V o lta g e


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    bd676a/678a/680a/682bd675abd677abd679a+8bd681o-126bd678abd682/678a/680ast bd681 transistorpower transistor bd PDF

    transistor BD 680

    Abstract: transistor BD 677 bd678 TRANSISTOR Bd 137
    Contextual Info: ESC » • flS3 5 bOS QOOMB'îT 3 « S I E G T—33 - 3 1 BD 676 BD 678 ' BD 680 PNP Silicon Darlington Transistors SIEMENS A K T I E N G E S E L L S C H A F 143" ° Epibase power darlington transistors 40 W BD 676, BD 678, and BD 680 are monolithic PNP silicon epibasepower darlington transistors


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    type00bd680fi23sbostransistor bd 680+3transistor bd 677bd678transistor bd 137 PDF

    transistor BD 680

    Abstract: bo680 B0678 BD878 BO676 bo67 D239 TRANSISTOR BD676 Q62702-D241 Q62702-D243
    Contextual Info: 2SC 3> m fl23SbüS QOQMBT'i 3 MSIEfi PNP Silicon Darlington Transistors T-33- •31 BD 676 BD 678 BD 680 SIEMENS AKTIENGESELLSCHAF143" Epibase power darlington transistors 40 W BD 676, BD 678, and BD 680 are monolithic PNP silicon epibase power darlington transistors


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    0235bq5t-33-31676/bdbd676+11bd678bd680bo676transistor bd 680bo680b0678bd878bo67d239 transistorq62702-d241q62702-d243 PDF

    D679A

    Abstract: BD670A transistor BD 800 transistor BD 677 BD681 EQUIVALENT transistor BD 677A 681 transistor mje 800 D679 BD670
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P la s tic M e d iu m -P o w e r S ilicon NPN D arlin gto n s . . . for use as output devices in complementary general-purpose amplifier applica­ tions. • High DC Current Gain — hpE = 750 Min @ lc = 1-5 and 2.0 Adc


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    bd675bd6767677abd679+11bd681d679abd670atransistor bd 800transistor bd 677bd681 equivalenttransistor bd 677a681 transistormje 800d679bd670 PDF

    BD876

    Abstract: transistor BD 680 BD878 BD660 BD876A LTA 703 S BD676
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic M edium -Pow er Silicon PNP Darlingtons . . . for use as output devices in complementary general-purpose amplifier applica­ tions. • High DC Current Gain — hpE = 750 Min @ lc - 1.5 and 2.0 Adc • Monolithic Construction


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    bd676bd675bd676abd678+7bd678abd876transistor bd 680bd878bd660bd876alta 703 s PDF

    bc 540

    Abstract: TRANSISTOR BC 137 TRANSISTOR BC 187 transistor Bc 540 TRANSISTOR BC 136 bc 207 npn BC 677 bsv57b TRANSISTOR BD 187 BD 139 N
    Contextual Info: Power transistors for horizontal deflection output circuits Type Structure Fig. Nr. Characteristics Maximum ratings ptot at 'case = +90°c 7c :a v W A fj Notes at ^ CERM V M Hz rc mA ^ CEsat a / q and " F E V A BU 204 NPN 25 10.0 2.5 1300 7.5 100 S5 2.0 2.0


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    bc1611bcy58bcy59bd1361+13bd436bc432bc547bc 540transistor bc 137transistor bc 187transistor bc 540transistor bc 136bc 207 npnbc 677bsv57btransistor bd 187bd 139 n PDF

    transistor BD 677

    Abstract: BD 675 BD675 677d
    Contextual Info: ES C T> m ÔEBSbOS 00043^5 b H S I E 6 NPN Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF Î5C °*395 T-33-29 ~ BD 675 BD 677 D BD 679 Epibase power darlington transistors 40 W BD 675, BD 677, and BD 679 are monolithic NPN silicon epibase power darlington


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    t-33-29bd679a23sbos00043rs+4bd675transistor bd 677bd 675677d PDF

    transistor kt 326

    Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
    Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice


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    transistor kt 326transistor kt 3107belcanto st 3010transistor bu 5027+6j 5027-ratakassettesanyo ctp 4360transistor kt 925transstereo 2401.00transistor kt 816 PDF

    BO677

    Abstract: transistor BD 677 bo679 B0677 BD677 thermal d242 BD 677 BC 677 Q62702-D240 Q62702-D242
    Contextual Info: ESC D • 023SbOS 0004315 b ■ S I E G NPN Silicon Darlington Transistors SIEMENS A K T I E N G E SE LL SC H AF Î5 C T-33-29 °*3 9 5 ~ BO 675 BD 677 BD 679 D Epibase power darlington transistors 40 W BD 675, BD 677, and BD 679 are monolithic NPN silicon epibase power darlington


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    023sbost-33-29bd676bd677+14a23sb0sooo43rabd675aktiengesellschaf-bd679bd67sbo677transistor bd 677bo679b0677thermal d242bd 677bc 677q62702-d240q62702-d242 PDF

    BT66T-19L

    Abstract: BT66T pin configuration NPN transistor c945 NPN BT66T-02L SImple Melody Generator SImple Melody Generator bt66t12l BT66T19L bt66 melody generator SImple Melody Generator bt66t19l
    Contextual Info: BT66T SIMPLE MELODY GENERATOR FEATURES * One shot or level hold mode * Plays a melody consisting of 64 note * RC oscillator on chip * 64-note ROM memory * Sound range : 2 octaves * Tempo : 15 kinds presto-largo * Direct piezo drive * Solution of automatic stop or repeat of the melody


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    bt66t64-notebt66t-19lbt66t-02l+12bt66t-08lbt66t-12lbt66t-68l1500x1000110x110pin configuration npn transistor c945 npnsimple melody generatorsimple melody generator bt66t12lbt66t19lbt66melody generatorsimple melody generator bt66t19l PDF

    PTGL09BD3R3N2B51B0

    Abstract: pth resistor pth posistor pTH murata Murata PTH
    Contextual Info: R90E6.pdf 04.3.1 catalog to prevent smoking and/or burning, Pleaseread readrating ratingand and!CAUTION !CAUTION for (forstorage, storage,operating, operating,rating, rating,soldering, soldering,mounting mountingand andhandling handling)ininthis thisPDF catalog


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    r90e624/32vdc24vptgl09bd3r3n2b51b0+4pth resistorpth posistorpth muratamurata pth PDF

    D675A

    Abstract: d679a
    Contextual Info: MOTOROLA Order this document by BD675/D SEMICONDUCTOR TECHNICAL DATA B D 67 5 B D 675A B D 677 B D 677A B D 67 9 B D 679A B D 681* P la s tic M e d iu m -P o w e r S ilic o n NPN D arlin g to n s . . . for use as output devices in complementary general-purpose amplifier applica­


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    bd675/dbd675bd676o-225aa+2d675ad679a PDF

    D675A

    Abstract: d679a transistor BD 677 BD675 MOTOROLA transistor H 802 681 transistor 675AE
    Contextual Info: MOTOROLA Order this document by BD675/D SEMICONDUCTOR TECHNICAL DATA B D 67 5 B D 675A B D 677 B D 677A B D 67 9 B D 679A B D 681* P la s tic M e d iu m -P o w e r S ilic o n NPN D arlin g to n s . . . for use as output devices in complementary general-purpose amplifier applica­


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    bd675/dbd675bd676o-225aa+7d675ad679atransistor bd 677bd675 motorolatransistor h 802681 transistor675ae PDF

    um3166

    Contextual Info: UNITED MI CR OELE C T R ON I C S TE D Ë J ‘ïBESfllE ODQDSbb 1 9 3 25812 UNITED MICR O E L E C T R O N I C S 92D 00566 LJlYiO D U M 3166AG r -1 o ; Simple Melody Generator Features • 64-note ROM memory ■ Direct piezo drive ■ 1.3V to 3.3V power supply and low power consumption


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    3166ag64-noteum3166agum3166ag1+5um3166ag2um3166ag3um3166ag4um3166ag5um3166 PDF

    D 5038 Transistor Horizontal

    Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
    Contextual Info: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching


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    cb-6914f4gd 5038 transistor horizontalamplificateur audio a base de transistor+8transistor 2n 892 x1amplificateur bftransistor st tyn 616equivalent of transistor bul 38 dabd 317 schematransistor 3055 out hvesm214transistor bdy 58 PDF

    230V ac to 5V dc usb charger circuit

    Abstract: D13005 TRANSISTOR SMD p1 DIODE SMD d8 EE20 core Flyback transformer
    Contextual Info: Innovative Green Power Solutions AC/DC Charger/Adapter Reference Designs ACT36X, ACT33X Rev 2.5 Oct 2012 www.active-semi.com ActivePSR TM High Efficiency AC/DC Primary Switching Solutions Application Change Note Revision History Page 12~13 2012-Oct– 19 Rev 2.5


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    act36xact33x2012-octact365-02+8epc1785-264vac2200ma230v ac to 5v dc usb charger circuitd13005transistor smd p1diode smd d8ee20 core flyback transformer PDF

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    2sb504kpl 30092sb502bly34+6germaniumbf316absx122sd716, 2sb686 35w amplifiersbf197acy52 PDF

    PTH8L14ar3r3m

    Abstract: PTH60 PTH8L PTH63 PTH8L04AR130H2B550 TRANSISTOR BC 553 transistor BD 110 PTH8L07 PTH8L09AR250H8B590 PTH61
    Contextual Info: THERMISTOR PRODUCTS PTC THERMISTOR FOR CIRCUIT PROTECTION PTH8L Series Posistor protects circuit components at the load and power supply sides by reducing the current when abnormal current flows through the circuit. FEATURES • Posistor ® continues to protect a circuit until the abnormal


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    cg01-jpth8l14ar3r3mpth60pth8l+7pth63pth8l04ar130h2b550transistor bc 553transistor bd 110pth8l07pth8l09ar250h8b590pth61 PDF

    transistor BD 522

    Abstract: PTH61H01AR220M140 PTH62 PTH60 transistor BD 110 PTH63 PTH8L07BD220N3B550 PTH8L07T102M2A550 PTH623H02AR270M265 PTH62H02AR180M265
    Contextual Info: THERMISTOR PRODUCTS PTC THERMISTOR FOR CIRCUIT PROTECTION PTH8L Series Posistor protects circuit components at the load and power supply sides by reducing the current when abnormal current flows through the circuit. FEATURES • Posistor ® continues to protect a circuit until the abnormal


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    cg01-htransistor bd 522pth61h01ar220m140pth62+7pth60transistor bd 110pth63pth8l07bd220n3b550pth8l07t102m2a550pth623h02ar270m265pth62h02ar180m265 PDF