TRANSISTOR BD 240 Search Results

transistor bd 292

Abstract: BD240C 20mH 1A power transistor bd
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON EPITAXIAL POWER TRANSISTOR BD 240C BPL TO-220 Complementary Silicon transistor Intended For A Wide Variety Of Switching & Amplifier Applications,Series And Shunt Regulators, Driver And Output Stages of HI-FI Amplifiers

Contextual Info: BD239/A/B/C NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 240/A/B/C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit 45 V : BD239A 60 V : BD239B 80 V : BD239C 100 V C ollector-E m itter Voltage : BD239

Contextual Info: BD240/A/B/C PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 239/A/B/C respectively ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol C ollector-E m itter V oltage : BD240 :BD240A :BD240B :BD240C C ollector Em itter V oltage : BD240

BD139

Abstract: transistor BD 139 BD 139 transistor BD139-6 BD 139 N BD 139-16 transistor bd 242 bd 3055 BD139 amplifier BD NPN transistors
Contextual Info: BD 139 NPIM-EPITAXIAL-PLANAR-SILICON-TRANSISTOR • • • • • Driver fo r Audio A m plifier Active Convergenz Regulators Power Switching Pt o t = 6.5 W at T g = 60 oc • hFE > 40 at !C = - 1 5 0 mA • VcE sat < - 0 .5 V at lc = - 0 .5 A mechanical data

transistor BD 246

Abstract: transistor BD 135 transistor bd 242 BD135 switch BD139 BD139-6 transistor BD transistor BD 246 b transistor BD 249 bd135 texas instruments
Contextual Info: BD135 NPN EPITAXIAL PLANAR SILICON TRANSISTOR 1171 DESIGNED FOR COMPLEMENTARY USE WITH BD136 • • • • Driver Stages Active Convergence Control Circuits Switching Application • • • Ptot = 6.5 W at T c = 60 °C hpE > 40 at lc = 150 mA VcE satl < 0.5 V at lc = 0.5 A

bd 241a transistor

Abstract: BD535 TRANSISTOR bd 108 transistor BD 240 BD417 BD633 d44c3 bd 8h TO-220B 45C11
Contextual Info: _6 0 9 178B MICRO ELECTRONICS C O R P _ 82D 00667 D 'T niCRO ELE CT RO NI CS CORP ÛE d Ê I b D T I ? flfl □□□0t=it=i7 3 | Of Power Iransistors P O L A R IT Y V CE SAT CASE I M A X IM U M R A T IN G S 'c (A) BD BD BD BD BD 239 239A

transistor BD 246

Abstract: transistor BD 249 transistor BD 240 BD 35 transistor transistor bd 242 BD139-6 transistor BD 239 transistor BD245 BD135 transistor BD 241
Contextual Info: BDI 36 PNP EPITAXIAL PLANAR SILICON TRANSISTOR 1171 DESIGNED FOR COMPLEMENTARY USE WITH BD135 • • • • • • • Driver Stages Active Convergence Control Circuits Switching Application Ptot * 6.5 Wat TC * 60 <>c hpE > 40 at lc = —150 mA Vce sat < 0.5 V at lc “ - 0.5 A

transistor BD 325

Abstract: BD 157 transistor MOTOROLA TRANSISTOR BD157 BD158 BD159 BD157 MOTOROLA
Contextual Info: MOTOROLA Order this document by BD157/D SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE

BDX 241

Abstract: TRANSISTOR 246 transistor BD 240 transistor BD 246 TRANSISTOR Bd 137 BD139-6 transistor BD 249 transistor bd 242 transistor BD245 BD137
Contextual Info: BDI 37 NPflM EPITAXIAL PLANAR SILICON TRANSISTOR 117 1 D E S I G N E D F O R C O M P L E M E N T A R Y U S E W ITH B D 138 • Driver Stages • A ctive Convergence • C ontrol Circuits • Sw itching Application • Ptot = 6.5 W at T c = 60 ° C • hFE > 40 at lc = 150 m A

transistor BD 736

Abstract: TRANSISTOR bd 737
Contextual Info: MMJT350T1 Bipolar Power Transistors PNP Silicon . . . designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. • High Collector−Emitter Sustaining Voltage − VCEO sus =300 Vdc @ IC

Contextual Info: Rev.5.0_00 STEP-UP, SUPER-SMALL PACKAGE, 600 kHz, PWM CONTROL or PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage source, an

S-8358B36MC-NQVT2G

Abstract: pin diagram of 8355 nichicon capacitor bd S-8355Q45MC-OXET2G S-8355M50MC s-8358b40mc-nqzt2 s-8358b40mc-nqzt2g S-8355M65MC-MDYT2G S-8355Q30MC-OWPT2G S-8357B30MA-NIPT2G
Contextual Info: Rev.6.6_00 STEP-UP, SUPER-SMALL PACKAGE, 600 kHz, PWM CONTROL or PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage source, an

Contextual Info: Rev.5.1_00 STEP-UP, SUPER-SMALL PACKAGE, 600 kHz, PWM CONTROL or PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage source, an

pin diagram of 8355

Abstract: S-8357H50MC-NNJT2G S-8358B33MC-NQST2G S-8358B36MC-NQVT2G 3.40 pf variable capacitor 6 pin current control forward dc to dc converter S-8357B50MA-NJJT2G 8357 S-8355M50MC S-8357BxxMA
Contextual Info: Rev.6.1_00 STEP-UP, SUPER-SMALL PACKAGE, 600 kHz, PWM CONTROL or PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER S-8355/56/57/58 Series The S-8355/56/57/58 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage source, an

transistor kt 326

Abstract: transistor KT 3107 Belcanto ST 3010 transistor BU 5027 J 5027-R atakassette SANYO CTP 4360 transistor kt 925 Transstereo 2401.00 transistor KT 816
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N O F E R N S E H E N ir .f -t j | R A P io -teievlslon JUNI/JULI 1960 6/7 SKITB 1-8 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt Informationen für den Fernsehgeräteservice

HN3C14F

Contextual Info: HN3C14F TOSHIBA TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE HN3C 14 F VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS Including Two Devices in SM6 Super Mini Type with 6 Leads MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO v CEO v EBO ic Ib MARKING

Contextual Info: MMJT350T1 Bipolar Power Transistors PNP Silicon Bipolar power transistorsĂare designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability. Features http://onsemi.com 0.5 AMPERE

40872

Abstract: 40872 transistor 40871 2N6180 npn 40872 2N6175 2N6178 2N6179 40988 40636
Contextual Info: POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS 16Q 6 .5 16 Power Output 4n 8Ì2 Imped. 18 45 Output Transistors Circuit P-N-P 40979 (2N6292) 40980 (2N6111) - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - Comp. Darlington BDX 33 2N6386

UM3166

Abstract: UM3166AG Series musical FREQUENCY DIVIDER um316 UM3166AGH "tone generator" DD 128 D transistor
Contextual Info: U M 3 1 6 6 A G S e ríe s Simple Melody Generator Features * • ■ ■ ■ 64-note ROM m em ory 1.3V to 3.3V power supply and low power consum ption RC oscillation on chip One shot or level hold m ode user option Compass: 2 octaves (C4 - C6) 1 Direct piezo drive

T350 sot223

Abstract: AYW marking code IC t350 MMJT350T1 MMJT350T1G
Contextual Info: MMJT350T1 Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features 0.5 AMPERE POWER TRANSISTOR

HN3C14FU

Contextual Info: T O S H IB A HN3C14FU TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C14FU Unit in mm V H F - U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS 2.1 ± 0.1 • Including Two Devices in US6 Ultra Super Mini Type with 6 Leads M A X I M U M RATINGS (Ta = 25°C)

Contextual Info: HN9C13FT TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HNQT1 3 FT • ■ u m ■ M F ■ ■ V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6

transistor mje29

Abstract: MJE30 bd139 bd140 MJE29 2N6407 transistor bd135-16 BD234 transistor BD140 BD136-16 BF459
Contextual Info: Silicon Power - Plastic This Selector Guide is to help the designer choose the best silicon power transistor for his new equipment. It is a comprehensive listing of the industry's most complete line of PNP and NPN silicon power transistors. Motorola has the production capability and flexib ility to supply devices especially tailored to specific

603al

Abstract: irfb3306 TMC603A schematic diagram 48v bldc motor speed controller smd diode marking BM 06 motor Speed Sensor circuit diagram using 555 timer ic si7164 Zener diode smd marking e2 smd TRANSISTOR H2 MARKING CODE TMC603
Contextual Info: TMC603A DATA SHEET V. 1.16 / 2010-May-14 1 TMC603A – DATASHEET Three phase motor driver with BLDC back EMF commutation hallFX and current sensing TRINAMIC Motion Control GmbH & Co. KG Sternstraße 67 D – 20357 Hamburg GERMANY www.trinamic.com 1 Features