TRANSISTOR BCP69 Search Results

BCP68

Abstract: BCP68-25 BCP69 transistor k 620
Contextual Info: UTC BCP68 NPN EPITAXIAL SILICON TRANSISTOR NPN MEDIUM POWER TRANSISTOR FEATURES * High current max. 1 A * Low voltage (max. 20 V) * Complementary to UTC BCP69 APPLICATIONS * General purpose switching and amplification under high current conditions. 1 SOT-223

BCP69T1G

Abstract: AYW marking code IC
Contextual Info: BCP69T1G, NSVBCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications.

TRANSISTORS BJT bc548

Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
Contextual Info: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002

BCP69 TRANSISTOR equivalent

Abstract: BCP69 UA-60
Contextual Info: BCP69 PNP Transistor Elektronische Bauelemente Silicon Epitaxial Transistor RoHS Compliant Product SOT-223 Description The BCP69 is designed for guse in low voltage and medium power applications. Features * VCEO : -20V * IC : 1A REF. Date Code A C D E I H

BCP68

Abstract: BCP69T1 BCP69T1G
Contextual Info: BCP69T1 PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. http://onsemi.com

BCP68

Abstract: BCP69 BCP69-16 BCP69-25 SC-73
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 BCP69 PNP medium power transistor; 20 V, 1 A Product specification Supersedes data of 2002 Nov 15 2003 Nov 25 Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BCP69

BCP68

Abstract: BCP69
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BCP68 NPN SILICON TRANSISTOR NPN MEDIUM POWER TRANSISTOR „ FEATURES * High current max. 1 A * Low voltage (max. 20 V). * Complementary to UTC BCP69 „ 1 SOT-223 APPLICATIONS * General purpose switching and amplification under high current

BCP68T1

Abstract: BCP68T3 BCP69T1 SMD310
Contextual Info: ON Semiconductort BCP68T1 NPN Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the

BCP68

Abstract: BCP69
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BCP69 PNP SILICON TRANSISTOR PNP MEDIUM POWER TRANSISTOR „ FEATURES * High current max. 1 A * Low voltage (max. 20 V). * Complementary to UTC BCP68 „ APPLICATIONS * General purpose switching and amplification * Power applications such as audio output stages.

BCP68T1G

Abstract: AYW marking code IC BCP68T3G BCP69T1
Contextual Info: BCP68T1G NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. Features

b3p3

Abstract: cec PNP transistor SOT89 transistor marking 84 SOT89 marking cec 12039 PNP TRANSISTOR SOT89 sot89 footprint BC869-16 SOT89 PHILIPS BC868-16 BC868-25
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BC869 PNP medium power transistor; 20 V, 1 A Product specification Supersedes data of 1999 Apr 08 2003 Dec 02 Philips Semiconductors Product specification PNP medium power transistor; 20 V, 1 A BC869

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications.

BCP68T1

Abstract: BCP68T1G BCP68T3 BCP68T3G BCP69T1
Contextual Info: BCP68T1 Preferred Device NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications.

BCP68T1

Abstract: BCP68T1G BCP68T3 BCP68T3G BCP69T1
Contextual Info: BCP68T1 Preferred Device NPN Silicon Epitaxial Transistor This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications.

BC368

Abstract: BC868 BCP68 BCP68-25 BCP69 SC-73 POWER AND MEDIUM POWER TRANSISTOR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D087 BCP68 NPN medium power transistor; 20 V, 1 A Product data sheet Supersedes data of 1999 Apr 08 2003 Nov 25 NXP Semiconductors Product data sheet NPN medium power transistor; 20 V, 1 A BCP68 FEATURES

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors BCP69 TRANSISTOR PNP SOT-223 FEATURES  High Current and Low Voltage  NPN Complement:BCP68 APPLICATIONS  General Purpose Switching and Amplification  1. BASE

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors BCP68 TRANSISTOR NPN SOT-223 FEATURES z z z z z For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCP69 (PNP)

Contextual Info: BCP68 NPN Silicon AF Transistor • For general AF applications 4 • High collector current • High current gain • Low collector-emitter saturation voltage 3 • Complementary type: BCP69 PNP 2 1 Pin Configuration VPS05163 Type Marking Package BCP68

bcp68

Contextual Info: BCP68 NPN Silicon AF Transistor • For general AF applications 4 • High collector current • High current gain • Low collector-emitter saturation voltage 3 • Complementary type: BCP69 PNP 2 1 Pin Configuration VPS05163 Type Marking Package BCP68

BCP68

Abstract: BCP68-10 BCP68-16 BCP68-25 BCP69
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors BCP68 SOT-223 TRANSISTOR NPN FEATURES z z z z z 1 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCP69 (PNP)

infineon AN077

Abstract: bcp69
Contextual Info: BCP69-25 PNP Silicon AF Transistor • For general AF applications 4 • High collector current 3 2 • High current gain 1 • Low collector-emitter saturation voltage • Complementary type: BCP68 NPN • Pb-free (RoHS compliant) package • Qualified according AEC Q101

Contextual Info: SOT223 PNP SILICON PLANAR M ED IU M POWER TRANSISTOR ISSUE 3 - FEBRUARY 1996 O_' FEATURES * For AF drivers and output stages * High collector current and Low VCE sat COMPLEMENTARY TYPE - BCP68 PARTMARKING DETAIL - BCP69 BCP69 - 25 ABSOLUTE M A X IM U M RATINGS.

BCP52-16

Abstract: BCP68-25 BCP69
Contextual Info: BCP68-25 NPN Silicon AF Transistor • For general AF applications 4 • High collector current 3 2 • High current gain 1 • Low collector-emitter saturation voltage • Complementary type: BCP69 PNP • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101

Contextual Info: BCP68 NPN Silicon AF Transistor
For general AF applications 4
High collector current
High current gain
Low collector-emitter saturation voltage 3
Complementary type: BCP69 PNP 2 1 Type Marking Pin Configuration BCP68 BCP 68 1=B 2=C 3=E 4=C SOT223