TRANSISTOR BC 102 Search Results

LT 450 mbr

Contextual Info: SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30Hz and 15 kHz • Complementary types: BC 856 W, BC 857 W,

transistor c2311

Abstract: transistor Bc 580 transistor bc 102 transistor BC 194 Transistor MARKING CODE AW BC 104 transistor TRANSISTOR BC 115 marking code fs 1 sot 323 transistor 7s 849 transistor BC 660
Contextual Info: SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • For AF input stages and driver applications • • • • High current gain Low coliector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,

transistor bc 487

Abstract: transistor bc 488 sot-323 transistor marking code 15
Contextual Info: SIEM ENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W,

transistor bc 144

Abstract: TRANSISTOR
Contextual Info: SIEMENS NPN Silicon AF Transistor • • • • BC 368 High current gain High collector current Low collector-emitter saturation voltage Complementary type: BC 369 PNP Type Marking Ordering Code BC 368 - C62702-C747 PinCoinfigurat ion 1 2 3 E C Package1)

q1205

Contextual Info: SIEMENS PNP Silicon AF Transistor • • • • BC 369 High current gain High collector current lo w collector-emitter saturation voltage Complementary type: BC 368 NPN Type Marking Ordering Code BC 369 - C62702-C748 Pin Configuration 1 2 3 E C Package1)

TRANSISTOR BC 252

Contextual Info: • bb53131 DDEMMfl? 321 « A P X N AMER PHILIPS/DISCRETE BC868 b7E D SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a microminiature plastic envelope intended for low-voltage, high-current l.f. applications. BC868/BC 869 is the matched complementary pair suitable for class-B audio output

BC868

Abstract: transistor marking HB sot-89 BC868-10 BC868-16 BC868-25 IEC134 L7E transistor T10102
Contextual Info: • bbSB'ìBl DD24MÖ7 Ö21 « A P X N AMER PHILIPS/ DIS CRETE b7E ì> BC868 A_ SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a microminiature plastic envelope intended for low-voltage, high-current l.f. applications. BC868/BC 869 is the matched complementary pair suitable for class-B audio output

transistor bc 577

Abstract: transistor bc 103
Contextual Info: SIEMENS BC 847S NPN Silicon AF Transistor Array >For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package F] FI FI liJ lU Type Marking Ordering Code

846PN

Abstract: VQE 11E
Contextual Info: SIEMENS BC 846PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation

marking Ht SOT-363

Abstract: 3h250 FT12E 3cs transistor
Contextual Info: SIEMENS BC 857S PNP Silicon AF Transistor Array >For AF input stages and driver applications 1High current gain • Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package ^ F I H "•> <>« i- n - i u Ordering Code

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AF AMPLIFIER • HIGH VOLTAGE: BC556, V Ce o = -6 5 V • LOW NOISE: BCSS9, BC560 • Complement to BC546 . BC 550 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Symbol Characteristic Collector Base Capacitance

transistor bc 102

Abstract: bc 103 transistor Transistor 337 transistor bc 337 c 337 25 transistor 338 transistor BC 338 bc 2001 transistor BC 170 transistor BC 337
Contextual Info: HN / BC 337/338 NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40, according to their DC current gain. As

Contextual Info: SIEMENS BC 846S NPN Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with high matching in one package 11 az t.£. FI iïl R Lü

transistor vc 548

Abstract: 547 transistor BC546.547 transistor c 548 transistor NPN 548 transistor C 548 B transistor C 547 TRANSISTOR BC 550 b transistor b 548 transistor c 548 c
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR BC546/547/548/549/550 SWITCHING AND AF AMPLIFIER • HIGH VOLTAGE: BC546, VCEO= 6 5 V • LOW NOISE: BC549, BC550 • Com plem ent to BC556 . BC 560 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector Base Voltage

BC369

Abstract: TRANSISTOR bH Silicon Epitaxial Planar Transistor philips
Contextual Info: I 1 N AUER P H I L I P S / D I S C R E T E L I E J> ^53*331 D027S43 152 H A P X BC369 I SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a plastic TO -92 envelope, intended for low-voltage, high-current LF applications. BC 368/B C 369 is the matched complementary pair suitable for class-B output stages up to 3 W.

2N3467

Contextual Info: 2N3467/TN3467/MPQ3467 ZWÄNational Juâ Semiconductor 2N3467 ^ TN3467 T L /G /1 0 1 0 0 -1 1 ^ ji 1 “ // MPQ3467 37 T L /G /1 0 1 0 0 -7 Bc T L /G /1 0 1 0 0 -8 PNP Switching Transistor Electrical Characteristics Symbol t a = 25°c unless otherwise noted

transistor d 364-y

Abstract: transistor BU 102 BC868 BC868-10 BC868-16 BC868-25 364Y marking JY BU 103 A transistor
Contextual Info: • bbâB'm GG2MMÔ7 ÖBl H A P X N AMER PHILIPS/DISCRETE b7E D BC868 A_ _ _ _ _ SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N tra n sisto r in a m ic ro m in ia tu re plastic envelope intended fo r low-voltage, h ig h-current l.f. applications. BC 868/B C 869 is the m atched com p le m e n tary p a ir suitable fo r class-B a udio o u tp u t

bc 357 transistor

Abstract: transistor BC 55 bc 106 transistor transistor bc 102 bc 103 transistor transistor C238 TRANSISTOR BC 237 TRANSISTOR BC 239 c bc 330 transistor TRANSISTOR BC
Contextual Info: * BC 237 BC 238 BC 239 "RANSISTORS NPN SILIC IU M , PLANAR EP ITAXIAUX IPN SILIC O N TRANSISTORS, E P IT A X IA L PLAN A R Preferred device D is p o s itif recommandé 3C 237 and BC 238 transistors are intended for ise in audio frequency preamplifier and driver

bc 303 transistor

Abstract: BC 109 Transistor TRANSISTOR BC 109 BC 107 transistor A 107 transistor transistor bc 107 bc 107 npn transistor BC 108 transistor BC107 BC109
Contextual Info: * B C 107 * BC 108 BC 109 \IPN SILICON TRANSISTORS, EPITAXIAL PLANAR rRANSISTORS NPN SILICIUM, PLANAR EPITAXIAUX Jompl. of BC 177, BC 178, BC 179 îfc Preferred device Dispositif recommandé The NPN "plan epitaxial" transi ton BC 107, 3C 108 and BC 109 are intended for use in

transistor BC 157

Abstract: TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC transistor series Siemens a35 BC161-10
Contextual Info: ESC D • û235bOS 0004100 T « S I E â ^ . .-r-M-âZ- PNP Silicon Transistors SIEMENS AKTIENGESELLSCHAF BC160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are intended for use as

TRANSISTOR BC 157

Abstract: BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES f15n transistor bc 102 BC161 transistor
Contextual Info: 2SC D • û23SbOS 0004100 T_«SIE<S^ PNP Silicon Transistors SIEMENS . AKTIENGESELLSCHAF B c160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are intended for use as

TRANSISTOR BC 327

Abstract: h21e bc 327 complementary pair transistor BC 337 transistor AS 337 transistor BC 327 40 transistor bc 630 TRANSISTOR BC 328 BC327 transistor 327
Contextual Info: *B C 3 2 7 BC328 NP SILICON TRANSISTORS, EPITAXIAL PLANAR R A N S IS T O R S PNP S IL IC IU M , P L A N A R E P IT A X IA U X ompl. of BC 337 and BC 338 îf; Preferred device Dispositif recommandé he BC 327 and BC 328 transistors are intended fo r a ide variety o f medium power AF am plifier and switlin g application ; they are particulary useful as

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

Marking 3ds sot

Abstract: transistor 5B1 BR 101 Transistor
Contextual Info: SIEMENS BC856S PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low colfector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package Fi FI FI U