TRANSISTOR BB 112 Search Results
TRANSISTOR BB 112 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| BLA1011-300 | Rochester Electronics LLC | BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| 93L422ADM/B | Rochester Electronics LLC | 93L422A - 256 x 4 TTL SRAM |
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| 54F151/BEA | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) |
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| 54F573FM/B | Rochester Electronics LLC | 54F573 - Bus Driver, F/FAST Series, 1-Func, 8-Bit, True Output, TTL, |
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TRANSISTOR BB 112 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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BT 816 transistor
Abstract: PA 1515 transistor 9921 transistor
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bfs540ot323bt 816 transistorpa 1515 transistor+1 | |
transistor BF 52Contextual Info: Philips Semiconductors bb N AUER 53 T 31 0025277 T O fl ^BAPX P H ILIP S /D IS C R E TE b Product specification 7E NPN 5 GHz wideband transistor FEATURES BFS25A PINNING • Low current consumption PIN CONFIGURATION PIN • Low noise figure DESCRIPTION Code: N6 |
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bfs25aot323mbc870transistor bf 52 | |
M54516P
Abstract: M54516 10261 transistor mitsubishi 7 pin 5v relay NO bipolar power transistor driver circuit
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be41fl27m54516p500ma20kfi+5 | |
BUF646Contextual Info: T e m ic BUF646 • BUF646A TELEFUN KEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • S im p le-sW itch-O ff T ransistor SW OT • HIGH SPEED technology • Planarpassivation • 100 kHz sw itching rate • Very low sw itching losses |
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buf646buf646a | |
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Contextual Info: Unit Specifications •Functional/Performance Specifications No. of Control Axes Position Control Functions 4-axis Type 8-axis Type 4 axes 4 axes x 1 8 axes (8 axes x 1) PTP Control, Cursor Path (CP) Control Control Method Interpolation Control 2-axis/3-axis linear interpolation 2-axis circular interpolation 3-axis spiral interpolation |
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000msarct1b271e | |
AJB-4
Abstract: BTS43212 transistor SMD t07 zener zd 501 bts 425 l1 st smd diode VU 5C smd siemens scr smd transistor 5c l E3122
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235b05tq-220ab/5q67060-s6204-a2o-22qab/5+13 | |
philips ON5134 transistor
Abstract: on5134 triacs bt 804 600v BT 804 triac tda3612 Triac bt 808 SMD Transistor W02 TRIAC BT 812 OM8838ps D203B
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dn48aphilips on5134 transistoron5134triacs bt 804 600v+7 | |
Infineon technology roadmap for mosfet
Abstract: germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor
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b191-h7496-g1-x-7600infineon technology roadmap for mosfetgermanium transistor pnp smdsmd mosfet sot-363+7 | |
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Contextual Info: 0Q247fll D5b B A P X Philips Semiconductors N AUER PHILIPS/DISCRETE NPN 3 GHz wideband transistor DESCRIPTION Product specification b?E ]> S BFG17A PINNING NPN wideband transistor in a microminiature plastic S O U 43 surface mounting envelope with double emitter bonding. |
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0q247fllbfg17aot143 | |
VLN 2003
Abstract: BTS 120 Transistor IR 413 IR 413 L transistor Bts 110 V 413 L transistor c 413
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c67078-a5307-a2vln 2003bts 120transistor ir 413+4 | |
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Contextual Info: Audio ICs Headphone driver for digital audio BA3578FS / BA3579FS The BA3578FS and BA3579FS are headphone drivers with internal an LPF and fixed bass boost circu itfo r multi-bit D / A converters. Applications Portable CD players Features 1 Suitable for use in digital audio equipm ent line-out |
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ba3578fsba3579fs34khz30khz | |
overtone butler oscillator
Abstract: FRP tank P6201 Mixer Mini-Circuits Nippon capacitors
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mc13-158/dmc131581phx33805-2mc13158/d+5 | |
nec PS2561
Abstract: PS256I LC-2225 SS-441-01-65 mark e3 46 diode
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ps2561ps2561l-1ps2561-1vde0884+6 | |
SOP-14B
Abstract: MM1106 Transistor WD 010
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mm1106sop-14btransistor wd 010 | |
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BTS6144B
Abstract: BTS6144P IL12
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6144b/pbts6144bbts6144pil12 | |
S6058
Abstract: BTS6144B BTS6144P IL12 Q67060-S6058-A102
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6144b/p2003-oct-01s6058bts6144b+3 | |
112-12a
Abstract: 2SC452 2SA1029 1804ce
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15kfl100ns50mhi112-12a+3 | |
TS142
Abstract: BFT25
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7110aabbft25ts142 | |
BUZ21Contextual Info: _ ObE D N AMER PHILIPS/DISCRETE • PowerMOS transistor bbS 3 T 31 0 0 1 4 4 3 3 T ■ BUZ21 t -SI-W May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in |
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buz21buz21_00144est-39-11+1 | |
transistor ck 112
Abstract: MB3604 B3604
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mb3604b360416-leaddip-16p-m04+1 | |
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Contextual Info: F U JIT S U HIGH FREQUENCY OPERATIONAL AMPLIFIER I I MB3604 Decem ber 1987 E d itio n 1.0 HIGH FREQUENCY OPERATIONAL AMPLIFIER The Fujitsu MB3604 is a monolithic high frequency operational amplifier fabricated by Fujitsu Bipolar Technology. The MB3604 has differential inputs, single-end output, and an on-chip buffer |
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mb360416-leaddip-16p-m04 | |
2907A PNP bipolar transistors
Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
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o-92d2907a pnp bipolar transistorsbc 148 transistor datasheettransistor bc 450 pnp+7 | |
lb1845
Abstract: EN5505B
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en5505b5505blb1845147a-dip28h | |
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Contextual Info: ¡0 FUJITSU MICROELECTRONICS 31E D D 37 MT7ti2 Ga iS L >4 0 b HBFMI 010002850201000201000201000201020100 HIGH FREQ UENCY O PE R A TIO N A L A M P L IFIE R The Fujitsu MB3604 is a monolithic high frequency operational amplifier fabricated by Fujitsu Bipolar Technology. |
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mb3604b36040q15b4bt-79-07-10+2 | |