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    TRANSISTOR BB 112 Search Results

    TRANSISTOR BB 112 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    54F151/BEA
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy
    54F573FM/B
    Rochester Electronics LLC 54F573 - Bus Driver, F/FAST Series, 1-Func, 8-Bit, True Output, TTL, PDF Buy

    TRANSISTOR BB 112 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BT 816 transistor

    Abstract: PA 1515 transistor 9921 transistor
    Contextual Info: Philips Semiconductors bb£ 3 R 31 Q Q 35 Q b b SR? ^ B A P X _ Product specification NPN 9 GHz wideband transistor BFS540 N AMER PHILIPS/DISCRETE FEATURES PINNING PIN CONFIGURATION PIN • High power gain DESCRIPTION _ EL Code: N4 • Low noise figure


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    bfs540ot323bt 816 transistorpa 1515 transistor+19921 transistor PDF

    transistor BF 52

    Contextual Info: Philips Semiconductors bb N AUER 53 T 31 0025277 T O fl ^BAPX P H ILIP S /D IS C R E TE b Product specification 7E NPN 5 GHz wideband transistor FEATURES BFS25A PINNING • Low current consumption PIN CONFIGURATION PIN • Low noise figure DESCRIPTION Code: N6


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    bfs25aot323mbc870transistor bf 52 PDF

    M54516P

    Abstract: M54516 10261 transistor mitsubishi 7 pin 5v relay NO bipolar power transistor driver circuit
    Contextual Info: b3E • O G m ^bb M IT S U B IS H I DGTL S Tfl ■ M I T 3 M ITSUBISHI BIPOLAR DIGITAL ICs M54516P L O G IC 5-UNIT 500mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M54516P, 5-channel sink driver, consists of 10 NPN tran­


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    be41fl27m54516p500ma20kfi+5-20-cm5451610261 transistormitsubishi 7 pin 5v relay nobipolar power transistor driver circuit PDF

    BUF646

    Contextual Info: T e m ic BUF646 • BUF646A TELEFUN KEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • S im p le-sW itch-O ff T ransistor SW OT • HIGH SPEED technology • Planarpassivation • 100 kHz sw itching rate • Very low sw itching losses


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    buf646buf646a PDF

    Contextual Info: Unit Specifications •Functional/Performance Specifications No. of Control Axes Position Control Functions 4-axis Type 8-axis Type 4 axes 4 axes x 1 8 axes (8 axes x 1) PTP Control, Cursor Path (CP) Control Control Method Interpolation Control 2-axis/3-axis linear interpolation 2-axis circular interpolation 3-axis spiral interpolation


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    000msarct1b271e PDF

    AJB-4

    Abstract: BTS43212 transistor SMD t07 zener zd 501 bts 425 l1 st smd diode VU 5C smd siemens scr smd transistor 5c l E3122
    Contextual Info: SIEM ENS ñ23SbüS 00*12701 T07 H PROFET BTS 432 12 Smart Highside Power Switch Product Summary Features * * * * * * * * * * * * Load dump and reverse battery protection1 VLoad dump Clamp of negative voltage at output Vbb- V buT Avalanche Short-circuit protection


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    235b05tq-220ab/5q67060-s6204-a2o-22qab/5+13e3122i2e3122aq67060-s6204-a3023sbgsajb-4bts43212transistor smd t07zener zd 501bts 425 l1st smd diode vu5c smdsiemens scrsmd transistor 5c l PDF

    philips ON5134 transistor

    Abstract: on5134 triacs bt 804 600v BT 804 triac tda3612 Triac bt 808 SMD Transistor W02 TRIAC BT 812 OM8838ps D203B
    Contextual Info: Philips Semiconductors, Inc. Product Discontinuation Notice DN48A Exhibit A January 21, 2003 SEE DN48A NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.


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    dn48aphilips on5134 transistoron5134triacs bt 804 600v+7bt 804 triactda3612triac bt 808smd transistor w02triac bt 812om8838psd203b PDF

    Infineon technology roadmap for mosfet

    Abstract: germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor
    Contextual Info: Small CHIPS for big visions Silicon Discretes www.infineon.com Never stop thinking. INTRODUCTION O n e o f t h e w o r l d ' s major manufacturers of radio frequency RF components, Infineon Technologies is committed to innovative technologies and products, flexible service and the very best supply conditions for customers and partners.


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    b191-h7496-g1-x-7600infineon technology roadmap for mosfetgermanium transistor pnp smdsmd mosfet sot-363+7microwave transistor siemens bfp 420varactor flip chipradar 77 ghz sigeinfineon automotive semiconductor technology roadmaptransistor smd dk qssiemens spc 2sige pnp transistor PDF

    Contextual Info: 0Q247fll D5b B A P X Philips Semiconductors N AUER PHILIPS/DISCRETE NPN 3 GHz wideband transistor DESCRIPTION Product specification b?E ]> S BFG17A PINNING NPN wideband transistor in a microminiature plastic S O U 43 surface mounting envelope with double emitter bonding.


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    0q247fllbfg17aot143 PDF

    VLN 2003

    Abstract: BTS 120 Transistor IR 413 IR 413 L transistor Bts 110 V 413 L transistor c 413
    Contextual Info: f t «Sii BTS 413 A Not for new design PROFET Replacement: BTS 412 B • • • • • • • • • • High-side switch Short-circuit protection Overtem perature protection with latch O verload protection Input protection O pen-load detection in off-condition


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    c67078-a5307-a2vln 2003bts 120transistor ir 413+4ir 413 ltransistor bts 110v 413 ltransistor c 413 PDF

    Contextual Info: Audio ICs Headphone driver for digital audio BA3578FS / BA3579FS The BA3578FS and BA3579FS are headphone drivers with internal an LPF and fixed bass boost circu itfo r multi-bit D / A converters. Applications Portable CD players Features 1 Suitable for use in digital audio equipm ent line-out


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    overtone butler oscillator

    Abstract: FRP tank P6201 Mixer Mini-Circuits Nippon capacitors
    Contextual Info: Order this docum ent by MC13-158/D MOTOROLA Advance Information WIDEBAND FM IF SUBSYSTEM FOR DECT AND DIGITAL APPLICATIONS Wideband FM IF Subsystem The MC13158 is a wideband IF subsystem that is designed for high performance data and analog applications. Excellent high frequency


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    nec PS2561

    Abstract: PS256I LC-2225 SS-441-01-65 mark e3 46 diode
    Contextual Info: DATA SHEET PHOTOCOUPLER PS2561 -1 ,-2, PS2561L-1 ,-2 HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES DESCRIPTION The PS2561-1, -2 and PS2561L-1, -2 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor.


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    ps2561ps2561l-1ps2561-1vde0884+6e7242ialnec ps2561ps256ilc-2225ss-441-01-65mark e3 46 diode PDF

    SOP-14B

    Abstract: MM1106 Transistor WD 010
    Contextual Info: System Reset with w atchdog tim er+battery back-up MM1106 MâïSUMÎ Monolithic IC M M 1106 This IC combines the popular watchdog timer with a battery back-up, resulting in an IC that is easier to use. The watchdog timer has a built-in power ON reset function, and both the timer and the battery back-up


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    mm1106sop-14btransistor wd 010 PDF

    BTS6144B

    Abstract: BTS6144P IL12
    Contextual Info: PROFET Data sheet BTS 6144B/P Smart Highside Power Switch Reversave  • Reverse battery protection by self turn on of power MOSFET Features • Short circuit protection with latch • Current limitation • Overload protection • Thermal shutdown with restart


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    6144b/pbts6144bbts6144pil12 PDF

    S6058

    Abstract: BTS6144B BTS6144P IL12 Q67060-S6058-A102
    Contextual Info: PROFET Data sheet BTS 6144B/P Smart Highside Power Switch Reversave • Reverse battery protection by self turn on of power MOSFET Features • Short circuit protection with latch • Current limitation • Overload protection • Thermal shutdown with restart


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    6144b/p2003-oct-01s6058bts6144b+3bts6144pil12q67060-s6058-a102 PDF

    112-12a

    Abstract: 2SC452 2SA1029 1804ce
    Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


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    15kfl100ns50mhi112-12a+32sc4522sa10291804ce PDF

    TS142

    Abstract: BFT25
    Contextual Info: Philips Sem iconductor! 1 7 1 1 0 a a b □ D b 'ÌB g b ^ 3 • P H IN _ _ P r o ç U æ t^ jr e c fflc a ^ NPN 2 GHz wideband transistor ^ BFT25 PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF low power amplifiers, such as in


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    7110aabbft25ts142 PDF

    BUZ21

    Contextual Info: _ ObE D N AMER PHILIPS/DISCRETE • PowerMOS transistor bbS 3 T 31 0 0 1 4 4 3 3 T ■ BUZ21 t -SI-W May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


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    buz21buz21_00144est-39-11+1y-39-11 PDF

    transistor ck 112

    Abstract: MB3604 B3604
    Contextual Info: FU JIT S U HIGH FREQUENCY OPERATIONAL AMPLIFIER I MB3604 1 1 December 1987 Edition 1.0 HIGH FR EQUENCY O PE R A TIO N A L A M P L IFIE R T h e Fu jitsu M B3604 is a m onolithic high frequency operational am plifier fabricated by Fujitsu Bipolar Technology.


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    mb3604b360416-leaddip-16p-m04+1transistor ck 112 PDF

    Contextual Info: F U JIT S U HIGH FREQUENCY OPERATIONAL AMPLIFIER I I MB3604 Decem ber 1987 E d itio n 1.0 HIGH FREQUENCY OPERATIONAL AMPLIFIER The Fujitsu MB3604 is a monolithic high frequency operational amplifier fabricated by Fujitsu Bipolar Technology. The MB3604 has differential inputs, single-end output, and an on-chip buffer


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    mb360416-leaddip-16p-m04 PDF

    2907A PNP bipolar transistors

    Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
    Contextual Info: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


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    lb1845

    Abstract: EN5505B
    Contextual Info: Ordering number: EN5505B M onolithic Digital 1C LB1845 No. 5505B SAiYO PWM Current Control Stepping Motor Driver Overview Package Dimensions T h e LB 1845 is a PW M c u rre n t c o n tro l ty p e step p in g u n it: m m m o to r d r iv e r th a t u se s a b ip o la r d riv e sc h e m e . It is


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    en5505b5505blb1845147a-dip28h PDF

    Contextual Info: ¡0 FUJITSU MICROELECTRONICS 31E D D 37 MT7ti2 Ga iS L >4 0 b HBFMI 010002850201000201000201000201020100 HIGH FREQ UENCY O PE R A TIO N A L A M P L IFIE R The Fujitsu MB3604 is a monolithic high frequency operational amplifier fabricated by Fujitsu Bipolar Technology.


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    mb3604b36040q15b4bt-79-07-10+216-leaddip-16c-c01 PDF