TRANSISTOR B 892 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

blw95

Contextual Info: N AMER PHILIPS/DISCRETE b'lE J> m bbS3T31 DQ2^SDb QbT IAPX B LW yt H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB operated high power industrial and military transmitting equipment in the h.f. band. The transistor presents excellent performance as a

BLX91A

Abstract: BLX91 R33F 0180 capacitor de polyester MHA IEC134
Contextual Info: N AMER~ PHILIPS/DISCRETE" 86D Dfc-E D • 1^53131 001403t. 01798 JI BLX91A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

Contextual Info: N AMER PHILIPS/DISCRETE m DbE J> 86D 01798 D Lb53T31 0Dm03L. 3 T - 31 ^ 6 * BLX91A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

pj 0159

Contextual Info: PhNip^temicon^ b b 5 3 T 31 0 □ 2 *4T b 7 SMfl Hi AP X AKER P HI L I P S / B I S CRE T E NPN 9 GHz wideband transistor FEATURES • High power gain ^ b7E BFG505; BFG505/X; BFG505/XR PINNING PIN 4 DESCRIPTION • Low noise figure • High transition frequency

t 326 Transistor

Abstract: 326 Transistor BU 103 A transistor J 326 transistor BU 104 BU326 Q62702-U268 npn transistor w5
Contextual Info: E5C D Ml fl235bOS G0GMÔ4M 'i H S 1 E G , NPN Silicon Power Transistor BU 326 A -SIEMENS AKTIENÛESELLSCHAF BU 3 2 6 A is a triple diffused silicon N PN power switching transistor in TO 3 case 3 B 2 DIN 4 18 7 2 . It is outstanding for short switching times and high dielectric strength and is

NXP SMD ZENER DIODE MARKING CODE

Abstract: PVR100AZ-B3V3 PVR100AD-B2V5 PVR100AD-B3V0 PVR100AD-B3V3 PVR100AD-B5V0 PVR100AZ-B12V PVR100AZ-B2V5 PVR100AZ-B3V0 PVR100AZ-B5V0
Contextual Info: PVR100AZ-B series Voltage regulator series Rev. 01 — 16 November 2006 Product data sheet 1. Product profile 1.1 General description Integrated Zener diode and NPN bipolar transistor in one package. Table 1. Product overview Type number PVR100AZ-B2V5 Package

DAS05

Contextual Info: Ordering n u m b e r:EN 1801E _ 2SC3676 NPN Triple Diffused Planar Silicon Transistor SA iYO i 900V/300mA High-Voltage Amp, High-Voltage Switching Applications A pplications • High-voltage amplifiers. - High-voltage switching applications. •Dynamic focus applications.

smd transistor marking 329

Abstract: NXP SMD ZENER DIODE MARKING CODE PVR100AD-B12V Zener diode smd marking sot223 PVR100AD-B2V5 PVR100AD-B3V0 PVR100AD-B3V3 PVR100AD-B5V0 PVR100AZ-B2V5 PVR100AZ-B3V0
Contextual Info: PVR100AD-B series Voltage regulator series Rev. 01 — 31 October 2006 Product data sheet 1. Product profile 1.1 General description Integrated Zener diode and NPN bipolar transistor in one package. Table 1. Product overview Type number PVR100AD-B2V5 Package

transistor tt 2206

Abstract: TT 2206 transistor transistor BU 102 t 326 Transistor transistor npn 326 BU326 W2206 326 Transistor
Contextual Info: ESC D Ml fl2 3 5 bOS G 0 G M Ô 4 M *] H S 1 E G , NPN Silicon Power Transistor BU 326 A - SIEMENS AKT IENÛ ES ELLS CH AF BU 326 A is a triple diffused silicon NPN power switching transistor in TO 3 case 3 B 2 DIN 41872 . It is outstanding for short switching times and high dielectric strength and is

LT 5251

Abstract: 2s87 a1t transistor TRANSISTOR A1t Y500200 t430 transistor transistor bc 541 5251 F ic T440 2SB564
Contextual Info: SEC j Silicon Transistor 2SB564 P N P X t" 2 * -> 7 J U fi '> 'J □ > h =y > v 7- H PNP Silicon Epitaxial Transistor Audio Frequency Power Amplifier o { S M M n i± f m y ^ B / P A C K A G E D IM EN SIO N S * Unit : mm ¿ 7 - fc.y v t , 0 2 S D 4 7 1 1 ^ > 7 °') * >

B 325 Dd

Abstract: BUZ 325
Contextual Info: SIEMENS BUZ 325 SIPMOS Power Transistor • N channel • Enhancement mode ' • Avalanche-rated fé V>I05‘S5 J Pin 1 Pin 2 G Type BUZ 325 Vfcs 400 V b 12.5 A ^DS on 0.35 ß Pin 3 D S Package Ordering Code TO-218AA C67078-S3118-A2 Maximum Ratings Parameter

2SD234

Abstract: 2SD235 2SD235 Toshiba 2so234 SD235 2SD2354 2SB434 2SB435 transistor 2sd234 8bb4
Contextual Info: r SILICON NPN DIFFUSED JUNCTION TRANSISTOR o • • 2 s d 234 À 2 s d 235 U n it in mm Audio Power A m p l if i e r A p p l i c a t i o n s ; V CE sat = Q 8 V 1 0 .3 M A X . # 3 ,6 ± a 3 ( T yp .) d c = l A ) 2SD235 ^ : P c = 3 5 w (To = 3 5 ^ ) 3^9 2 S B 4 34 , Z S B i 35 t ^ 7') t

TIP2955T

Abstract: A4S2 TIP3055T T-23-Z
Contextual Info: DEVELOPMENT DATA T h is data sheet c o n ta in s advance in fo rm a t io n a nd TIP2955T sp e cific atio n s are su b ject t o cha nge w it h o u t notice. PHILIPS INTERNATIONAL SbE D • 711005b 0043bG4 2 2 5 H P H I N T -2 3 -Z 1 SILICON EPITAXIAL-BASE POWER TRANSISTOR

Beckman 661

Abstract: 661 Beckman MRF134
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F M O S F E T Line 5.0 W N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR 2.0-400 MHz N-CHANNEL MOS BROADBAND RF POWER . . . d e s ig n e d fo r w id e b a n d la rg e -s ig n a l a m p lifie r a n d o s c illa to r

m64884

Abstract: 910 IC
Contextual Info: preliminary nation M its u b is h i ics Cordless Telephone M64884FP Transistor fo r VCO,1st IF M IX,2-m ultiple circuit built-in 500MHz/1GHz Dual PLL Synthesizer 1.DESCRIPTION T he M 64884F P is a 2 -s y s te m 1-chip P LL fre q u e n c y s y n th e ­ size r IC de sig n e d of A n a lo g co rd le ss te le p h o n e f o r N orth

Contextual Info: TO SHIBA 2SA1892 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 892 PO W ER AM PLIFIER APPLICATIONS U nit in mm PO W ER SWITCHING APPLICATIONS Low Collector Saturation Voltage : V e E ( s a t ) = - ° - 5V (Max.) High Power Dissipation

2SA1892

Abstract: 2SC5029
Contextual Info: TOSHIBA 2SA1892 2 S A 1 892 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm PO W ER SWITCHING APPLICATIONS • • • • 8.0 ± 0.2 Low Collector Saturation Voltage : VCE (sat)“ —0.5V (Max.) High Power Dissipation

2SA1892

Abstract: 2SC5029
Contextual Info: TO SH IBA 2SA1892 2 S A 1 892 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 8.0 ± 0.2 Low Collector Saturation Voltage : VCE (sat)“ —0.5V (Max.) High Power Dissipation

2SA1892

Abstract: 2SC5029 sh03
Contextual Info: TO SH IBA 2SA1892 2 S A 1 892 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm POWER SWITCHING APPLICATIONS 8.0 ± 0.2 Low Collector Saturation Voltage : VCE (sat)“ —0.5V (Max.) High Power Dissipation

2SA1892

Abstract: 2SC5029
Contextual Info: T O S H IB A 2SA1892 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 892 PO W ER AM PLIFIER APPLICATIONS U n it in mm PO W ER SWITCHING APPLICATIONS Lo w C o llecto r S a tu ra tio n V o ltag e : V e E ( s a t )= - ° -5V (Max.) H ig h P o w e r D issip a tio n

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters

HVR-1X 7 diode

Abstract: STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159
Contextual Info: Bulletin No O01EC0 JAN.,1998 SEMICONDUCTORS SHORT FORM CATALOG Power ICs Power Transistors PowerMOSFETs Tryristors Diodes Light Emitting Diodes CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility

transistor W2W

Abstract: UAA4002DP UAA4002 W2W TRANSISTOR UAA 4002 UAA 190 transistor s 13001 UAA 1002 RSD-5V NA031A
Contextual Info: S G S - T H O M S Q !L 1 O T @ w N « S U A A 4 0 0 2 CONTROL CIRCUIT FOR FAST SW ITCHING TRANSISTORS , D IR E C T D R IV E OF THE SW ITC H IN G T R A N S ­ ISTOR S ELF R E G U LA TE D P O SITIVE E AS È C U R ­ RENT 1 A max • N E G AT IV E BASE C U R R E N T E NSURING FAST