TRANSISTOR B 560 Search Results

EN4539

Abstract: SB0703C
Contextual Info: I Ordering number:EN4539 _ FP301 TR : NPN Epitaxial Planar Silicon Transistor No.4539 SMÊYO SBD : Schottky B arrier Diode i DC/DC Converter Applications F eatures • Composite type with 2 devices NPN transistor and Schottky barrier diode contained in one package,

OSC-2.0SM

Abstract: ASI10639
Contextual Info: OSC-2.0SM NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 2L FLG The ASI OSC-2.0SM is a high performance silicon transistor designed for high power oscillator applications to 3.0 GHz with typical RF power of 2.0W A ØD B .060 x 45° CHAMFER

2088a

Contextual Info: Ordering number : EN 3 9 6 1 A N 0 .3 9 6 1 A II_ FP102 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky B arrier Diode SAiYO DC/DC Converter Applications F e a tu re s • Composite type with a PNP transistor and a Schottky barrier diode contained in one package,

BS421

Abstract: Unitrode Semiconductor transistor t220
Contextual Info: n i C R O S E M I CO RP/ lilATERTOUN 5ÜE D • T B H T T b B G G l E l S h STD « U N I T BISYN SYNCHRONOUS RECTIFIER U BS421 For Low-Voltage < 5.0V Loads FEATURES • Very Low On Resistance, Typically T- ? s-~ / 9 DESCRIPTION The BISYN is a bipolar junction transistor specifically designed to perform the rectifying

2SB737

Abstract: 2SD786 251D J802 MAS 560 2Sb737 transistor
Contextual Info: 40E D ROHti co Ltd 7 ä2ö * m h "7 > y X £ / T ransistors 0Q054Ö3 3 B R H M 2S B 737 : 737 7 ^ 2 7 -0 ? •fÊ rbb' i £ i l ^ i i Î i Æ / L o w rbb' Low Noise Amp. Epitaxial Planar PNP Silicon Transistor • ÿfJfi"î}‘^ l 3 / ' Dinrïensions • mm

Contextual Info: WTM1624 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead Pb -Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Description SOT-89 The WTM1624 applies to voltage regulators, relay drivers,lamp drivers,and electrical equipment. Features Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage

BJ 027

Abstract: 2SB1427 T100 transistor PNP marking BJ pnp SOT89
Contextual Info: 2SB1427 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SB1427; B J*, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.5 V (max) for lc/lB = - 1 A/-50 mA

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 - JANUARY 1997 FEATURES C ’ * * VC E0=-12V 5 A m p Continuous Current 20 A m p Pulse Current * Low S aturation Voltage * High Gain T , c B SOT223 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage

fr diode

Abstract: DIODE JS.6 P-T0251
Contextual Info: SIEMENS SPD21N05L SPU21N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv/df rated • 175°C operating temperature Pin 1 Pin 2 Pin 3 G D S Type Vps b R DS on Package Ordering Code SPD21N05L 55 V

ASI1005

Abstract: ASI10524
Contextual Info: ASI1005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1005 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min at 5 W/ 1,000 MHz

ASI2003

Abstract: TRANSISTOR D 570 ASI10528
Contextual Info: ASI2003 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 2003 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 10 dB min. at 3 W/ 2,000 MHz

ASI10541

Abstract: ASI4000
Contextual Info: ASI4000 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 4000 is Designed for General Purpose Class C Power Amplifier Applications up to 4200 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 5 dB min. at 0.5 W / 4,000 MHz

ASI1002

Abstract: ASI10523 class E power amplifier
Contextual Info: ASI1002 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1002 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min at 2.0 W / 1,000 MHz

ASI1001

Abstract: ASI10522
Contextual Info: ASI1001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1001 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min.at 1.0 W / 1,000 MHz

ASI2307

Abstract: ASI10536 9533a k 2057
Contextual Info: ASI2307 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 2307 is Designed for General Purpose Class C Power Amplifier Applications up to 3000 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 9.5 dB min. at 7.0 W/2300 MHz

ASI2304

Abstract: ASI10535
Contextual Info: ASI2304 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 2304 is Designed for General Purpose Class C Power Amplifier Applications up tp 3000 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 9.5 dB min. at 4 W / 2300 MHz

ASI3001

Abstract: ASI10538
Contextual Info: ASI3001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 3001 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 7 dB min. at 1.0 W / 3,000 MHz

ASI4003

Abstract: ASI10543 transistor 4003
Contextual Info: ASI4003 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 4003 is Designed for General Purpose Class C Power Amplifier Applications up to 4200 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 5 dB min. at 3 W / 4,000 MHz

ASI3005

Abstract: ASI10540
Contextual Info: ASI3005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 4.5 dB min. at 5 W / 3,000 MHz • Hermetic Microstrip Package

OSC-1.3SH

Abstract: ASI10638
Contextual Info: OSC-1.3SH NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .230 2L FLG DESCRIPTION: A ØD The ASI OSC-1.3SH is Designed for General Purpose Oscillator Applications up to 2.7 GHz. B .060 x 45° CHAMFER C E G FEATURES: L • VCC = 21 V • Common Collector • Omnigold Metalization System

Contextual Info: 2S B 16 39 Transistors 2 S D 2 3 1 8 / 2 S D 19 44 High-current gain Power Transistor —60V, —3A 2SB1639 I • A b so lu te maximum ratings ( T a = 2 5 t) • F ea tu res 1 ) H ig h D C c u rre n t g a in . (T y p .4 4 0 a t V c e / I c = — 4 V / - •0 .5 A )

ASI2302

Abstract: ASI10534
Contextual Info: ASI2302 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .230 2L FLG A The ASI 2302 is Designed for General purpose Class C Power Amplifier Applications up to 3000 MHz. 2 ØD B .060 x 45° CHAMFER 3 C E 1 G FEATURES: L • PG = 9.5 dB min. at 2 W / 2300 MHz

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MJE13003 Features • NPN Silicon Plastic-Encapsulate Transistor Lead Free Finish/RoHS Compliant Note 1 ("P" Suffix designates

transistor NEC D 587

Abstract: de 535
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA800T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD T he/xP A 800T has b u ilt-in 2 1o w -v o It age tra n s is to rs w h ic h are d e sig ne d PACKAGE DRAW INGS