TRANSISTOR B 116 Search Results

TS142

Abstract: BFT25
Contextual Info: Philips Sem iconductor! 1 7 1 1 0 a a b □ D b 'ÌB g b ^ 3 • P H IN _ _ P r o ç U æ t^ jr e c fflc a ^ NPN 2 GHz wideband transistor ^ BFT25 PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF low power amplifiers, such as in

Contextual Info: N AUER PHILIPS/DISCRETE b'lE » bbSa'ni QQS^bHl OHS BLX95 IAPX A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r transmitting applications in class-A, B or C in the u.h.f. frequency range fo r supply voltages up to 28 V. The transistor is resistance stabilized and is

BC260

Contextual Info: BC260 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups A, B and C according to its DC current gain. m ax .0.5 $ Metal case JEDEC TO-18 18 A 3 according to DIN 41876 Collector connected to case

ac 0624 transistor 17-33

Contextual Info: Philips Semiconductors • b b 5 3 T 31 D D 3QDfib STD H A PX Product specification UHF power MOS transistor BLF521 N AUER PHILIPS/DISCRETE FEATURES b^E 3> ■ PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability

cq 636 g transistor

Contextual Info: bbsa'oi Philips Semiconductors goeses^ n s • APX N AMER PHILIPS/D ISCR ETE NPN 3 GHz wideband transistor b?E Product specification D ^ BFS17A PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF applications such as TV tuners.

MR25 resistors

Contextual Info: N AMER PHILIPS/DISCRETE b*lE D • APX bb53T31 DQ2flfllb AbM BLU20/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. Features: • multi-base structure and emitter-ballasting resistors for an optimum temperature profile

TRANSISTOR J 5804 NPN

Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.

NE24300

Abstract: NE243187 transistor 81 110 w 63 NE243287 NE243188 NE243 NE243288 transistor 81 110 w 85 NE243499 NE24318
Contextual Info: N E C / SbE D C A L IF O R N IA b*4274m 00D2371 31b «NECC H " '3 3 > - 0 S NEC NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is designed for oscillator

4FB1

Abstract: KTK597
Contextual Info: SEMICONDUCTOR KTK597 TECHNICAL DATA N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR CONDENSER MICROPHONE APPLICATION. FEATURES E ・Especially Suited for Use in Audio, Telephone. B M M ・Capacitor Microphones. ・Excellent Voltage Characteristics. G SYMBOL RATING

wgs SOT-23

Abstract: transistor marking code wgs Q62702-C2337
Contextual Info: BCR 116 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 116 WGs 1=B Q62702-C2337 Package 2=E 3=C SOT-23 Maximum Ratings

AVF300

Abstract: ASI10572
Contextual Info: AVF300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2NL FLG The ASI AVF300 is a high power Class C transistor, Designed for IFF/DME/TACAN Applications in 960-1215 MHz. A .0 2 5 x 4 5 ° 4 x .0 6 2 x 4 5 ° 2X B ØD C E F FEATURES: G • Internal Input/Output Matching Networks

SL 100 NPN Transistor

Abstract: transistor tt 2222 SL 100 power transistor 43120203664 International Power Sources ferroxcube wideband hf choke Philips 119
Contextual Info: P H IL IP S bSE I N T ^ ’-i D O 711002b 00b2fab4 A bCH H P H I N BLT90/SL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically fo r class-B operation.

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

BJT characteristics

Abstract: NE68135 NE AND micro-X 2SC4227 2SC5007 2SC5012 NE681 NE68100 NE68118 NE68119
Contextual Info: SILICON TRANSISTOR NE681 SERIES NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz E rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e

transistor zo 607

Abstract: 2SC5089 transistor 1G1
Contextual Info: TOSHIBA 2SC5089 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5089 V H F -U H F B A N D LO W NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. • NF = l.ld B , |S2lel2= 13dB f = 1GHz Unit in mm + 0 .5 2 .5 —0 .3 M A X IM U M RATINGS (Ta = 25°C)

e981-08

Abstract: 2SC1658 2SC1656 NE98100 NE98108 NE98141 NE981
Contextual Info: NEC/ CALIFORNIA SEC SbE D b 4 2 7 4 m 0002525 2Tfl « N E C C NE98100 NE98108 NE98141 NPN SILICON HIGH SPEED SWITCHING TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H G AIN B A NDW IDTH PRO DU CT: fr = 7 GHz The NE981 series of NPN silicon transistors is designed for mi­

SDT4901

Contextual Info: C Ä 7 Ä [L MEDIUM TO HIGH VOLTAGE, FAST SWITCHING o n tr a n Devices. Inc. NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR (FORMERLY 16 C H IP N U M B E R CONTACT METALLIZATION B ase and emitter: > 30,000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel S ilv er" also available)

ic 1496 specifications

Abstract: IC 4407 7472 ic ic 7472 2SC5090
Contextual Info: TOSHIBA 2SC5090 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5090 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. • NF = l.ld B , |S2lel2= 13dB f = 1GHz Unit in mm 2.1 ± 0.1 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Transistor S 40443

Contextual Info: bbS3T31 0024T37 flOO « A P X Philips Semiconductors NPN 7 GHz wideband transistor £ BFG197; BFG197/X; BFG197/XR AMER PHILIPS/ DIS CRETE FEATURES Product specification b?E D PINNING PIN • High power gain • Low noise figure • Gold metallization ensures

KTC3600S

Abstract: transistor j50
Contextual Info: SEMICONDUCTOR KTC3600S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES Low Noise Figure, High Gain. E B L L 2 D NF=1.1dB, |S21e| =13dB f=1GHz . H SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage

transistor j50

Abstract: J250 j50 transistor KTC3790S
Contextual Info: SEMICONDUCTOR KTC3790S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES Low Noise Figure, High Gain. E B L L 2 D NF=1.2dB, |S21e| =13dB f=1GHz . H SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage

MPQ6700

Abstract: MPQ6600A1 MPQ6700 equivalent MPQ6001 MPQ6100A MPQ6501 MPQ6502
Contextual Info: MOTOROLA Order this document by MPQ6700/D SEMICONDUCTOR TECHNICAL DATA Quad Complementary Pair Transistor NPN/PNP Silicon MPQ6700 14 13 12 11 10 9 8 1 2 3 4 5 MPQ6501, MPQ6502 For Specifications, See MPQ6001 Data COMPLEMENTARY 6 7 MPQ6600A1 TYPE B For Specifications,

NE68135

Abstract: transistor npn d 2078 common emitter bjt transistor bf 494 NE68133-T1B-A mje 3009
Contextual Info: SILICON TRANSISTOR NE681 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o l w PL l as r e t o n o f a f r d e DESCRIPTION e o

on 5295 transistor

Abstract: fr91a BFR91A transistor bfr91a to92 fr91a TO-92 BFR91A 993 395 pnp npn transistor ai 757 TRANSISTOR fr91a NPN/TRANSISTOR 187
Contextual Info: Philips Sem iconductors JZ - 3 /- I Z Product specification - ^ NPN 6 GHz wideband transistor PHILIPS INTERNATIONAL BFR91A 711Dfl2b D L m 5 7 C H 5bE 57 B • P H IN PINNING FEATURES DESCRIPTION PIN • Low noise • Low intermodulation distortion • High power gain