TRANSISTOR APPLICATIONS HF 12 V 150 WATT Search Results

Contextual Info: NTE236 Silicon NPN Transistor Final RF Power Output PO = 16W, 27MHz, SSB TO220AB Description: The NTE236 is a silicon NPN transistor in a TO220AB type package designed for 10−14 watt output power class AB amplifier applications in the HF band. Features:

transistor SG 14

Abstract: pHEMT transistor tgf2021 TGF2021-04 TGF2021-04-SG 4GHZ TRANSISTOR
Contextual Info: TrìQuint SEMICONDUCTOR TGF2021-04-SG 4 W, 12V, 20MHz - 4 GHz, pHEMT Wideband RF Transistor Product Description The TriQuint TGF2021-04-SG is a 4 Watt P1dB discrete 4mm pHEMT RF Transistor operating at 12 volts. Both de­ fense and commercial markets can take advantage of the

10205 transistor

Abstract: JF18004
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M JE 18004* M JF 18004* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications •Motorola Prttanrtd D«vlc* POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS

JE180

Abstract: transistor 3707 switching transistor JF18002 3704 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M JE18002* M JF18002* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications "Motorola Preferred Dovtc« POW ER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS

Contextual Info: MOTOROLA Order this document by BUH50/D SEMICONDUCTOR TECHNICAL DATA BUH50 D esigner’s Data Sheet POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS SWITCHMODE NPN Silicon Planar Power Transistor T h e B U H 5 0 has an a p p lic a tio n s p e c ific s t a t e - o f- a r t d ie d e s ig n e d fo r use in

TRIMMER capacitor 5-60 pF

Contextual Info: ERICSSON ^ PTB 20237 150 Watts, 470-860 MHz UHF TV Power Transistor Description The 20237 is a class AB, NPN, common emitter UHF TV power transistor intended for 28 Vdc operation from 470 to 860 MHz. Rated at 150 watts minimum output power, it may be used for both CW and

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

D260-4118-0000

Abstract: 0119A 0190A
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VS25L Rev. 0, 10/2012 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET MRFE6VS25LR5 RF power transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to

30175 CW

Contextual Info: Afa MOSFET Power Transistor DU 1230V Preliminary 30 Watts, 30-175 MHz, 12 V Features Outline Drawing • N-Channel Enhancement Mode Device • HF to VHF Applications • 30 Watts CW • Common Source Push-Pull Configuration • DMOS Structure • Aluminum Metallization

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1078 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • • 30 MHz 28 VOLTS POUT = 130 WATTS GP = 12 dB MINIMUM IMD -30 dB GOLD METALLIZATION

2SC2166

Abstract: 2SC2166 equivalent transistor 2sC2166 2sc2166 transistor T30 transistor 2SC2166+equivalent
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2166 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2166 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. • • • • 03.6 9.1 ± 0 .7

Contextual Info: ERICSSON ^ PTB 20170 30 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP

S100 transistor

Abstract: T30 transistor
Contextual Info: M O S FET P o w e r Transistor Preliminary 30 Watts, 30-175 MHz, 12 V Features Outline Drawing • N-Channel Enhancement Mode Device • HF to VHF Applications • 30 Watts CW • Common Source Push-Pull Configuration • DMOS Structure • Aluminum Metallization

transistor 936

Abstract: 100 watt hf mosfet 12 volt 150 watt hf transistor 12 volt transistor qz transistor rf m 2528 DU2840V 100 watt hf transistor 12 volt 1000 watt hf transistor 12 volt atc ldo LDS100
Contextual Info: A tÓ K m m an A M P com pany RF MOSFET Power Transistor, 40W, 28V 2 -1 7 5 MHz DU2840V Features • • • • • • N-Channel Enhancement Mode Device HF to VHF Applications 40 Watts CW Common Source Push-Pull Configuration DMOS Structure Aluminum Metallization

2sc1969

Abstract: 2sc1969 transistor transistor 2sC1969 mitsubishi 2sc1969 2sc1969 capacitance
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1969 NPN EPITA XIA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1969 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications. 9.1 ± 0 .7 FEATURES Dimensions in mm

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Em itter Diode and Built-in Efficient Antisaturation Netw ork T h e B U D 4 4D 2 is s ta te -o f-a rt High Speed High gain BIPolar transistor H 2B IP .

2SC1969

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1969 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC1969 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers on HF band mobile radio applications. 9.1 ± 0 .7 FEATURES Dimensions i'

2SC1945

Abstract: TO220 RF POWER TRANSISTOR NPN IDO24 TRANSISTOR 2sC1945 2sC1945 NPN circuit rf amplifier 2sc1945 12V-pm mitsubishi 2sc1945
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1945 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1945 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF band mobile radio applications. 9.1 ± 0 . 7 FEATURES • 0 3 .6 ± 0 . 2

erf7530

Abstract: 100 watt hf mosfet 12 volt ERF*7530 100 watt hf mosfet 80 watt hf mosfet ERF-7530 erf7530 mosfet ekl components ERF7530E MAR 703 MOSFET TRANSISTOR
Contextual Info: ERF7530 RF Power MOSFET - 30MHz / 75 Watt PEP DESCRIPTION The ERF7530 is a MOSFET transistor developed for RF power amplifier applications in the HF frequency range. High power in a TO-218 package for an excellent ‘watt per dollar’ value. TO-218 PACKAGE OUTLINE & MARKINGS

BUV20

Contextual Info: MOTOROLA Order this document by BUV20/D SEMICONDUCTOR TECHNICAL DATA BUV20 SWITCHMODE Series NPN Silicon Power Transistor 50 AMPERES NPN SILICON POWER METAL TRANSISTOR 125 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications.

L147F

Abstract: mo9t Transistor 3-347 UL147F 3-347 transistor ADE 450
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet B U M 47* BUL147F* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications *Moton>la Pr*f«rr*d D *vic* POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS The BUL147/BUL147F have an applications specific state-of-the-art die designed

2N649

Contextual Info: MOTOROLA Order this document by 2N6497/D SEMICONDUCTOR TECHNICAL DATA 2N6497 2N 6498* High Voltage NPN Silicon Power Transistors ‘ Motorola Preferred Device 5 AMPERE POWER TRANSISTORS NPN SILICON 250 & 300 VOLTS 80 WATTS . . . designed for high voltage inverters, sw itching regulators and lin e -o p e ra te d

2sc2166

Abstract: 2SC2166 equivalent
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2166 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2166 is a silicon NPN epitaxial planar type transistor designed Dimensions i for RF power amplifiers in HF band mobile radio applications. 9.1 ± 0 .7 FEATURES

Contextual Info: ERICSSON $ PTF 10022 65 Watts, 1.0 GHz LDMOS Field Effect Transistor Description The 10022 is a common source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications to 1,0 GHz. Its push-pull configuration allows for simpler broadband matching. It is rated