dv2810
Abstract: dv2810s 176/transistor WW 179 593 PH 275 v Stackpole 57
Contextual Info: 5642205 M /A -C O M P H I I N 0 ^ 1 F | 5b42205 0000440 DV2810S n W T ~ 0 1 ' — 1 n-channel enhancement-mode RF Power FETs designed for. HF/VHF Amplifiers Class A, B, or C High Dynamic Range Amp Benefits 175MHz 20"?ow 10dB Absolute Maximum Ratings 25°o
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st4250saddd44dv2810s175mhz+5cto150dv2810176/transistor ww 179593 ph 275 vstackpole 57
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SEMCO
Abstract: arco capacitors 422 arco capacitors DU1215S arco TRIMMER capacitor
Contextual Info: _ S 6 4 2 2 0 S M/A-COM P H I M/A-COM P H I I NC_ INC ÛS dF 05D 0 0 4 2 2 O T - ; ? - ^ | 5b42205 GQGDMaa fl N-CHANNEL RF POWER MOSFET DU1215S ^ M / A -C O M PHI, INC. FEATURES • UNIQUE NEW MOSFET STRUCTURE ■ LOWER CAPACITANCES FOR BROADBAND OPERATION
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s64220sdu1215s0-j15sb45eds+4semcoarco capacitors 422arco capacitorsarco trimmer capacitor
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PHA2230
Contextual Info: Afii Bipolar Pulsed Power Module PHA2230-18S 18 Watts, 2.20-3.00 GHz, 2 [is Pulse, 10% Duty Features Outline Drawing • Designed for Radar and EW Applications • Input and Output Matched to 50Q • Class C Pulse Operation Absolute Maximum Ratings at 25°C
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pha2230-18spha22305b42205 |
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m21 sot23 diode
Abstract: sot-23 m21 sot23 m21 diode cross reference M21 sot23 MA47110 pin diode cross reference MMCOM MA4P274ST287 MA4P277CK-287
Contextual Info: SMPP Series M/A-COM Surface Mount Plastic PIN Diodes Features • • • • • • • • Package Outlines Surface Mount Package Low Capacitance Diodes Low Loss Switch Diodes Low Distortion Attenuator Diodes Lowest IRin Industry Fast Switching Diodes Single and Dual Diode Configurations
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ma4p275ma4p789ma4p277ma4p278+11366-z266m21 sot23 diodesot-23 m21sot23 m21diode cross referencem21 sot23ma47110pin diode cross referencemmcomma4p274st287ma4p277ck-287
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MA47221
Contextual Info: Afocm M an A M P com pany Stripline PIN Diode Switch Modules MA47200 Series Features • • • • • • Broadband 50 Ohm Designs Through X Band Circuit Characterized High Power Capacity Voltage Ratings to 1000 Volts Fast Switching Speed to 10 Nanoseconds
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ma472005b422d5ma47221 |
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sot23 a4p
Abstract: diode cross reference Microwave PIN diode MA4P a4p sot-23 MA4p series pin diode cross reference 274c ma4p
Contextual Info: A f o c m M a n A M P com pany Surface Mount PIN Diodes MA4P Series V 2.00 Features • • • • • • • SOT-23 Surface Mount Package Low Capacitance Diodes Low Loss Switch Diodes Low Distortion Attenuator Diodes Fast Switching Diodes Single and Dual Diode Configurations
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ot-235b4220500q153dsot23 a4p+7diode cross referencemicrowave pin diode ma4pa4p sot-23ma4p seriespin diode cross reference274cma4p
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im 308-c
Abstract: ma47047
Contextual Info: M an A M P com pany PIN Diode Chips V 2.00 Features • • • • • • CERMACHIP glass o r Silicon D ioxide Passivation H erm etically Sealed CERMACHIP Design Fast Speed, Low Loss M icrowave Chips A ttenuator Chips Voltage Ratings to 1500 Volts W ide Range of PIN Characteristics
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mil-std883im 308-cma47047 |
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transistor c 3206
Abstract: transistor j7
Contextual Info: Afa R adar Pulsed Power Transistor PH0404-7EL 7 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor •Common Emitter Configuration • Broadband Class C Operation • Reliable Fishbone Geometry
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ph0404-7elsb4220s5b422050dq1175+2transistor c 3206transistor j7
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MA4ST230-1141
Abstract: varactor ghz DCS1800 MA4ST200 MA4ST230 MA4ST230CK-287 MA4ST240 MA4ST250 ROC SOT 23 sot-23 B8
Contextual Info: MA4ST200 Series M /A -C O M Low-Voltage / High Q Si Hyperabrupt Varactors Features • • • • • • • M\\I S M<K ^ ,»•% Configurations Surface M ount Packages SOT-23, SOT-323, SOD-323 High Q at Low Voltages High Capacitance Ratio at Low Voltages
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ma4st200ot-23ot-323od-323+9ma4st230-1141varactor ghzdcs1800ma4st230ma4st230ck-287ma4st240ma4st250roc sot 23sot-23 b8
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S100 transistor
Abstract: T30 transistor
Contextual Info: M O S FET P o w e r Transistor Preliminary 30 Watts, 30-175 MHz, 12 V Features Outline Drawing • N-Channel Enhancement Mode Device • HF to VHF Applications • 30 Watts CW • Common Source Push-Pull Configuration • DMOS Structure • Aluminum Metallization
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5b42205s100 transistort30 transistor |
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SS MOSFET
Abstract: dd260 S6020
Contextual Info: MOSFET P o w er Transistor A ß LF2620C Preliminary 20 Watts, 500 -1000 MHz, 26 V Features • • • • • Outline Drawing N-Channel Enhancement Mode Device UHF to Cellular Applications 20 Watts CW RESFET Structure Gold Metallization Absolute Maximum Ratings at 25°C
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lf2620c1000ma5b42205ss mosfet+2dd260s6020
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2N6665
Abstract: MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953
Contextual Info: an A M P com pany General Purpose Low Noise Bipolar Transistors Features Case Styles • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed
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sl42e05m220s0001fl112n6665+9ma42001-5092n6665-509ma42181-5102n5054rf npn power transistor c 10-50 ghz2n2857 modelma42001ma42 transistor2n3953
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J31 transistor
Abstract: CR2480M transistor f 948 transistor mosfet 803 C953 20 amp MOSFET transistor PD233 GP 948 nee j8
Contextual Info: an A M P com pany MOSFET Power Transistor, 80W, 26V 925 - 960 MHz CR2480M V2.00 Features • • • • • • • N-Channel Enhancement Mode Device Cellular Base Station Applications 8 0 Watts CW Common Source Gem ni Configuration RESFET Structure Internal Input Impeda nee Matching
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cr2480mole715b422055b42505+8j31 transistortransistor f 948transistor mosfet 803c95320 amp mosfet transistorpd233gp 948nee j8
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